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1. 发明专利

JP2575428B2 失效
公开(公告)号：JP2575428B2
公开(公告)日：1997-01-22
申请号：JP30616987
申请日：1987-12-03
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA MASATO , SUZUKI OSAMU , WAKASA YASUO
IPC分类号： C30B15/02 , C30B15/10 , H01L21/18

2. 发明专利

JPH01148780A GRANULAR BODY FEEDER 失效
公开(公告)号：JPH01148780A
公开(公告)日：1989-06-12
申请号：JP30616787
申请日：1987-12-03
申请人： TOSHIBA CERAMICS CO
发明人： SATO NOBUYUKI , MATSUDA MASATO , SUZUKI OSAMU , WAKASA YASUO
IPC分类号： C30B29/06 , B01J4/00 , B01J8/00 , C30B15/02
摘要： PURPOSE:To prevent the infiltration of the external air and impurities into a furnace wall at the time of feeding a granular silicon polycrystal into a crucible contg. the melt of crystal components and provided in the surface wall kept at a vacuum by using the title feeder of specified structure. CONSTITUTION:A single crystal 11 is pulled up in the furnace wall 5 kept at a vacuum by a pump 17 while closing a valve 15. Meanwhile, the insides of covers 26 and 27 of the feeder 19 are kept by a pump 45 at a vacuum lower than pressure in the furnace wall 5 while closing a valve 40. A unit 30 is then approached to the furnace wall 5, the covers 26 and 27 and a cover 28 are connected, the valves 15 and 40 are opened, and the pump 45 is stopped. One end of a pipe 25 is inserted into the furnace wall 5 by operating a handle 35, the pipe 25 is vibrated by a means 29, hence the granular silicon polycrystal 21 is continuously supplied into the crucible 6 from a hopper 20 through pipes 24 and 25, and the single crystal 11 is simultaneously pulled up.

3. 发明专利

JPS6437490A SILICON SINGLE CRYSTAL PULLING-UP APPARATUS 失效
公开(公告)号：JPS6437490A
公开(公告)日：1989-02-08
申请号：JP19412987
申请日：1987-08-03
申请人： TOSHIBA CERAMICS CO
发明人： SUZUKI OSAMU , MATSUDA MASATO
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06
摘要： PURPOSE:To sustain growth of nucleus having crystal defect, by feeding a high-temperature inert gas into a heat treating furnace and feeding a low- temperature inert gas into a pulling-up passage of silicon single crystal. CONSTITUTION:A silicon material 53 housed in a quartz crucible 54 is melted by reducing pressure in a heating furnace 20 through a discharge tube 23 and applying voltage to a heater 30 to send electricity while feeding argon gas from a inert gas supply device 60 through a inert gas supply tube 63. A silicon single crystal 56 is grown by properly selecting the rotating rate of the rotating shaft 51 while continuing supply of argon gas through the inert gas supply tube 63 after melting the silicon material 53 and jetting the argon gas from the inert gas jetting component 67 through the inert gas supply tube 65 and pulling up a seed crystal with a wire component 55 for pulling-up. In the above- mentioned apparatus 10, growth of nucleus having crystal defect is prevented by pulling up the silicon single crystal 56 and then cooling the crystal, since the inert gas (e.g. argon gas) fed to the pulling-up passage of the silicon single crystal 56 is lowered to the desired temperature.

4. 发明专利

JPS63285194A APPARATUS FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS63285194A
公开(公告)日：1988-11-22
申请号：JP11849287
申请日：1987-05-15
申请人： TOSHIBA CERAMICS CO
发明人： SUZUKI OSAMU , MATSUDA MASATO
IPC分类号： C30B15/00 , C30B29/06
摘要： PURPOSE:To control the latent nuclei growing into minute crystal defects by heat- treatment process and to uniformize the concentration of the nuclei in a single crystal over the whole length along the pulling direction, by providing an ultrasonic generator to an apparatus to rotate and vertically move a crucible device. CONSTITUTION:An Si material 53 is charged into a quartz crucible 54 of a crucible device 50 outside of a pulling-up furnace and the crucible device is inserted into the pulling-up furnace with a rotating and vertically moving apparatus 60. The pulling-up furnace is rotated with the rotating and vertically moving apparatus 60 while evacuating the furnace through an evacuation port 22 and supplying an inert gas into the furnace through a pulling-up chamber and a pulling-up hole 21. A proper voltage is applied to a heater 30 from a proper power source while applying ultrasonic vibration to the crucible device 50 with an ultrasonic generator built in the rotating and vertically moving apparatus 60. The crucible device 50 is heated with the heater 30 to melt the content, a suspended pulling-up wire 55 is inserted into the furnace through the pulling-up hole 21, a seed crystal attached to the lower end of the wire is dipped into the Si material 53 and the wire is slowly pulled up toward the pulling-up chamber to effect the growth of a single crystal.

5. 发明专利

JPS6033294A PULLING DEVICE FOR SINGLE CRYSTAL SEMICONDUCTOR 失效
公开(公告)号：JPS6033294A
公开(公告)日：1985-02-20
申请号：JP13925583
申请日：1983-07-29
申请人： TOSHIBA CERAMICS CO
发明人： TAJI HIDEKAZU , YAMATO MITSUHIRO , SUZUKI OSAMU , WATANABE MASAHARU
IPC分类号： C30B15/12 , C30B15/30 , H01L21/02 , H01L21/208
摘要： PURPOSE:To make uniform characteristics in both growth direction and radial direction by using a double-structure crucible and providing a penetrating hole to the side face of an internal crucible and impressing magnetic field in the perpendicular direction to the molten starting material of semiconductor in the crucible. CONSTITUTION:A double-structure crucible 11 protected by a protecting body 3 consists of an external crucible 11a and a bottomed internal crucible 11b. A penetrating hole 11c is bored at a specified position on the side face of an internal crucible 11b. The internal crucible 11b is suspended from above or an annular superconductive coil 12 is provided to the external periphery of the chamber 1. Since magnetic field in the perpendicular direction is impressed to the molten silicon 9 by the effect of the superconductive coil 12 in this pulling device, component in the horizontal direction of convection is mainly and effectively retarded. Further, since a double structure crucible 11 is used, the concn. of impurity and concn. of oxygen in the molten silicon 9 in the internal crucible 11b are held at almost constant values.

6. 发明专利

JP2575427B2 失效
公开(公告)号：JP2575427B2
公开(公告)日：1997-01-22
申请号：JP30616887
申请日：1987-12-03
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA MASATO , SUZUKI OSAMU , WAKASA YASUO , SATO NOBUYUKI
IPC分类号： C30B15/02 , C30B15/10 , H01L21/18

7. 发明专利

JPH0566351B2 失效
公开(公告)号：JPH0566351B2
公开(公告)日：1993-09-21
申请号：JP12172785
申请日：1985-06-05
申请人： TOSHIBA CERAMICS CO
发明人： MATSUDA MASATO , NAKANISHI MASAMI , SUZUKI OSAMU , FUKUMURA KAZUO
IPC分类号： C30B29/06 , C30B15/00 , H01L21/18 , H01L21/208

8. 发明专利

JPH04331791A DEVICE FOR PULLING UP SI SINGLE CRYSTAL 失效
公开(公告)号：JPH04331791A
公开(公告)日：1992-11-19
申请号：JP12871691
申请日：1991-05-01
申请人： TOSHIBA CERAMICS CO
发明人： SUZUKI OSAMU , ISHIKAWA TAKASHI
IPC分类号： C30B15/00
摘要： PURPOSE:To increase pulling speed without increasing density of precipitated material of oxygen. CONSTITUTION:The top of a radiating shield 9 can be maintained at the same position as that of the upper part of a quartz crucible 1 or a lower position than the upper part so that temperature ingredient in the direction of growth axis of single crystal in Si single crystal just above melt is enlarged and a temperature range of growth of precipitated material of oxygen is shortened.

9. 发明专利

JPH03275587A SEMICONDUCTOR SINGLE CRYSTAL PULLING-UP DEVICE 失效
公开(公告)号：JPH03275587A
公开(公告)日：1991-12-06
申请号：JP7528990
申请日：1990-03-23
申请人： TOSHIBA CERAMICS CO
发明人： SUZUKI OSAMU , MIYAHARA SEIGO
IPC分类号： C30B15/26 , H01L21/208
摘要： PURPOSE:To improve the preciseness of the control of the liquid surface position of molten material and the quality of semiconductor single crystal by finding the diameter of the semiconductor single crystal from the monitoring result of a monitor camera and the diameter of a crucible unit with the monitoring result of a pyroscanner. CONSTITUTION:The result (namely the image signal) given by the monitor camera 51 monitoring the liquid surface of molten material W received in the crucible unit 30 is suitably processed in an arithmetic circuit 53 to be made in the brightness signal along the direction of the diameter of the semiconductor single crystal M. As the high brightness part of the brightness signal corresponds to the meniscus formed around the semiconductor single crystal M, the distance between the two positions of high brightness corresponds the diameter of the semiconductor single crystal M. Consequently, by measuring the distance between the two positions of high brightnerss, the diameter of the semiconductor single crystal M is calculated by the arithmetic circuit 53.

10. 发明专利

JPH0359040B2 失效
公开(公告)号：JPH0359040B2
公开(公告)日：1991-09-09
申请号：JP13925583
申请日：1983-07-29
申请人： TOSHIBA CERAMICS CO
发明人： TAJI HIDEKAZU , YAMATO MITSUHIRO , SUZUKI OSAMU , WATANABE MASAHARU
IPC分类号： C30B15/12 , C30B15/30 , H01L21/02 , H01L21/208

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