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1. 发明专利

JPH0142917B2 失效
公开(公告)号：JPH0142917B2
公开(公告)日：1989-09-18
申请号：JP25185583
申请日：1983-12-26
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B15/22 , C30B15/00 , C30B15/30 , H01L21/208

2. 发明专利

JPS61132585A Apparatus for adding dopant 失效
标题翻译：用于添加溺爱者的装置
公开(公告)号：JPS61132585A
公开(公告)日：1986-06-20
申请号：JP20448085
申请日：1985-09-18
申请人： Toshiba Ceramics Co Ltd
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU , HIGUCHI TAKAYOSHI
IPC分类号： C30B15/04 , H01L21/18 , H01L21/208
摘要： PURPOSE: To obtain a single crystal having precisely controlled dopant concentration, smoothly in high yield, by using a doping apparatus movable relative to the furnace and furnished with a specific doping tube, and adding a dopant when the single crystal raw material is melted.
CONSTITUTION: The doping apparatus 7 is composed of a doping tube 8 made of quartz glass. A protection tube 21 is placed to the outside of the small diameter part 8b of the doping tube 8, bellows 22 are arranged to the outside of the protection tube 21, and the upper plate 23 and a rectangular water-cooled lower plate 24 are fixed to both ends of the bellows 22. An O-ring 13 is inserted between the plate 24 and the furnace, and an O-ring 25 is inserted between the plate 23 and the top 21a of the tube 21. A double-walled supporting tube 26 is attached to the large-diameter part 8a of the doping tube 8, and plural sets of teflon parts 27 and O-rings 28 are placed alternately between the inner wall of the supporting tube 26 and the large- diameter part 8a to keep the hermetic structure. The single crystal raw material 6 in a crucible 5 supported rotatably and vertically movably in the furnace 1 is heated wit the heater 4. When the raw material 6 is melted, the doping tube 8 is shifted into the furnace 1, and the valve is opened by reciprocating the operation rod 11 through the sealing rubber plug 14, etc., to drop the dopant into the molten raw material 6.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过使用可相对于炉子移动并配备特定掺杂管的掺杂装置获得具有精确控制的掺杂剂浓度的单晶，并以高产率平稳地获得，并且当单晶原料熔化时添加掺杂剂。构成：掺杂装置7由石英玻璃制的掺杂管8构成。保护管21放置在掺杂管8的小直径部分8b的外侧，波纹管22布置在保护管21的外侧，并且上板23和矩形水冷底板24固定将波纹管22的两端插入到板24和炉之间，并且O形环25插入在板23和管21的顶部21a之间。双壁支撑管 26连接到掺杂管8的大直径部分8a，并且多个聚四氟乙烯部件27和O形环28交替地放置在支撑管26的内壁和大直径部分8a之间，以保持密封结构。在炉1中以可旋转和垂直方向移动的坩埚5中的单晶原料6与加热器4一起加热。当原料6熔化时，掺杂管8移动到炉1中，并且阀打开通过使操作杆11通过密封橡胶塞14等往往，将掺杂剂落入熔融原料6中。

3. 发明专利

JPS62260791A DEVICE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS62260791A
公开(公告)日：1987-11-13
申请号：JP10391886
申请日：1986-05-08
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B15/02 , C30B29/06 , H01L21/18 , H01L21/208
摘要： PURPOSE:To simplify recharging operation of silicon raw material extremely, by setting a silicon raw material container which can be evaluated and a feed pipe in such a way that the silicon raw material can be fed to a crucible while keeping a chamber at reduced pressure. CONSTITUTION:When silicon single crystal 24 is taken out from a chamber 11 after pulling of the crystal, a crucible 15 is raised and only the surface of remaining silicon melt 23 is solidified. then, the chamber 11 is reevacuated, air in a silicon raw material container 35 is simultaneously sucked by a vacuum piping 37 in a closed state of a gate valve 34 and an Ar gas is made to flow from a piping 38 to the container 35. When the interior of the container 35 is replaced with the Ar gas and the presence of the container is reduced to the pressure in the chamber 11, the bottom end of a feed pipe 31 is dropped to the vicinity of remaining silicon melt 23, the gate valve 34 is opened, the crucible 15 is recharged with a silicon raw material 36 and the crucible 15 is gradually lowered. When recharging is finished, the crucible 15 and the feed pipe 31 are returned to given positions and the following pulling up operation is carried out again.

4. 发明专利

JPS6144791A Carbon crucible for silicon single crystal pulling up apparatus 失效
标题翻译：碳水晶硅胶单晶拉丝机
公开(公告)号：JPS6144791A
公开(公告)日：1986-03-04
申请号：JP16684284
申请日：1984-08-09
申请人： Toshiba Ceramics Co Ltd
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B15/10 , C30B29/06
摘要： PURPOSE: To prevent the contamination of molten silicon with carbon originated from by-product CO gas, by boring a tapered small hole from the inside to the outside to a carbon crucible used as a susceptor of a quartz crucible.
CONSTITUTION: Plural small holes slightly inclining downward are bored to the lower part of the circumferential wall of a carbon crucible 3 from the inside to the outside. A quartz crucible 4 is inserted in the above carbon crucible 3, and the molten silicon in the quartz crucible 4 is pulled up by Czochralski process to obtain a silicon single crystal. CO gas generated by the reaction of C of the carbon crucible 3 with the SiO
2 of the quartz crucible 4 is discharged from the furnace together with the argon gas stream introduced through the small holes 7 and ascending the gap between the crucibles 3 and 4. A silicon single crystal having high quality and free from the contamination with carbon can be produced by this process.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了防止来自副产物CO气体的碳的熔融硅污染，通过将锥形小孔从内到外钻孔到用作石英坩埚的基座的碳坩埚。构成：向下倾斜的多个小孔从内侧向外侧向碳坩埚3的周壁的下部开孔。将石英坩埚4插入上述碳坩埚3中，通过切克劳斯基法将石英坩埚4中的熔融硅拉起，得到单晶硅。通过碳坩埚3的C与石英坩埚4的SiO 2的反应产生的CO气体与通过小孔7导入的氩气流和坩埚3和4之间的间隙一起从炉中排出。可以通过该方法制造具有高质量且不含碳污染的硅单晶。

5. 发明专利

JPS63297291A DEVICE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS63297291A
公开(公告)日：1988-12-05
申请号：JP13163087
申请日：1987-05-29
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B15/00 , C30B15/14 , C30B29/06
摘要： PURPOSE:To surely fix a heater and eliminate a breakage accident thereof, by partially engaging the heater with grooves provided in clamps with wedges and pressing the wedges with wedge pressing jigs thereon. CONSTITUTION:Two parts prepared by partially cutting the bottom of a heater 6 are engaged with grooves provided on the top surfaces of clamps 7 and 7 placed between electrode mounting parts of the heater 6 and fixed with wedges 16 and 16, which are then pressed thereon with wedge pressing jigs 17 and 17 mounted on the top surfaces of the clamps 7 and 7 with bolts 18 and 18.

6. 发明专利

JPS63159286A DEVICE FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS63159286A
公开(公告)日：1988-07-02
申请号：JP30632186
申请日：1986-12-24
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU , HIGUCHI TAKAYOSHI
IPC分类号： C30B15/12 , C30B15/14 , C30B29/06 , H01L21/18
摘要： PURPOSE:To obtain a silicon single crystal pulling up device to rotate melt Si itself and to uniform temperature distribution in the melt Si by a generated three-phase magnetic field, by connecting an electrode of a heater to heat and melt a Si raw material in a crucible, set in the outer periphery of the crucible, to a three-phase AC electric source. CONSTITUTION:A crucible 5 is charged with a polysilicon raw material and a dopant, an inner crucible 10 is put in the crucible, which is evacuated while sending an inert gas to the crucible. Then an electrode 6 is connected to a three-phase AC electric source 9. A three-phase AC is sent to a carbon heater 7, the raw material is melted and the inner crucible 10 is floated in molten Si11. Then seed crystal 14 is immersed in the molten Si11 in the crucible 10 and Si single crystal 15 is pulled while rotating and raising a pulling up shaft 12. In the operation, since three-phase magnetic field is generated as the result of application of three-phase AC to the heater 7, the molten Si11 having high electrical conductivity is rotated by the magnetic field. Consequently, temperature distribution in the molten Si11 can be uniformized and concentration distribution of impurity in the Si single crystal 15 to be pulled up can also made uniform.

7. 发明专利

JPS60137895A APPARATUS FOR PULLING SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS60137895A
公开(公告)日：1985-07-22
申请号：JP25185583
申请日：1983-12-26
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B15/22 , C30B15/00 , C30B15/30 , H01L21/208
摘要： PURPOSE:To elongate the excitation time of a magnet of the titled apparatus furnished with a ring-shaped superconductive magnet, and to improve the operation efficiency of the apparatus, by attaching a refrigerator to the magnet, and making the chamber movable vertically as a whole. CONSTITUTION:The motor 3 is placed at the top of the detachable pull chamber 2 on the chamber 1 having openings at the top and the bottom. The protector 5 is supported by the rotatable rod 4 inserted from the lower opening of the chamber 1 to protect the quartz crucible 6 in the chamber. The protector 5 is surrounded with the cylindrical heater 7 and the heat-insulation cylinder 8. The chamber 1 including its content is made movable along vertical direction. The seed crystal 10 is attached to the lower end of the chain 9 suspended rotatably above the crucible 6 by the motor 3. The refrigerator 12 is connected to the superconductive magnet 11 placed at the outer circumference of the chamber 1, and these are made to be movable upward. In the case of cleaning and maintenance, the chambers 1 and 2 are removed, the chamber 1 and its content are lowered, and the whole assembly is cleaned and maintained in the cleaning room 15 under the floor.

8. 发明专利

JPS61261288A APPARATUS FOR PULLING UP SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPS61261288A
公开(公告)日：1986-11-19
申请号：JP10212785
申请日：1985-05-14
申请人： TOSHIBA CERAMICS CO
发明人： YAMATO MITSUHIRO , UYAMA NAGATERU
IPC分类号： C30B29/06 , C30B15/12 , H01L21/18 , H01L21/208
摘要： PURPOSE:The titled apparatus, having an inner crucible having a hole in the interior of a crucible and capable of producing a silicon single crystal having little variation in resistance value and oxygen concentration. CONSTITUTION:A silicon raw material and dopant are filled in a crucible 5, which decompressed while passing an inert gas thereinto. A current is then passed from electrodes 6 and 6 through a carbon heater 7 to melt the raw material in the crucible 5. A supporting axis 3 is lifted to dip the inner crucible 10 in molten silicon 14. A seed crystal 13 is then dipped in the molten silicon 14 in the inner crucible 10 in the state of the rotated crucible 5. The seed crystal 13 is then pulled up while rotating a pulling up axis 11 to grow the aimed silicon single crystal 15. As the pulling up proceeds, the supporting axis 3 is lifted to keep the positional relation between the melt surface of the molten silicon 14 and the inner crucible 10 constant. Thus, the use of the crucible having the double structure provides the production of the silicon single crystals having little variation in resistance value and oxygen concentration and further, the yield of silicon wafers can be improved.

9. 发明专利

JPS6033298A PREPARATION OF SINGLE CRYSTAL SEMICONDUCTOR 失效
公开(公告)号：JPS6033298A
公开(公告)日：1985-02-20
申请号：JP13925983
申请日：1983-07-29
申请人： TOSHIBA CERAMICS CO
发明人： TAJI HIDEKAZU , YAMATO MITSUHIRO , SUZUKI OSAMU , HIGUCHI TAKAYOSHI , UYAMA NAGATERU
IPC分类号： C30B15/00 , C30B15/30 , H01L21/208
摘要： PURPOSE:To prepare a single crystal semiconductor of large caliber and high quality easily by impressing magnetic field in a specified range to molten starting material of semiconductor in a crucible supported freely rotatably and dipping a seed crystal suspended freely rotatably in the molten material and then pulling up. CONSTITUTION:An annular superconductive coil 11 is provided at the sideward position near the surface of melt of molten silicon 9 at the periphery of a chamber 1. Further, the strength of magnetic field can be set optionally by the superconductive coil 11, and the magnetic flux density is made high near the surface of the melt of the molten silicon 9, and the magnetic flux density is made low at the bottom of the crucible 4. If the strength of the magnetic field is regulated to 200-1,000 gauss, vibration of the surface of the melt of molten silicon 9 and fluctuation of the temp. are retarded, therefore, a single crystal silicon having large caliber can be prepd. Moreover, the distribution of temp. in the neighbourhood of boundary surface of crystal growth of molten silicon 9 is made uniform, therefore, generation of unevenness of concn. of impurities in the single crystal silicon 10 is reduced remarkably.

10. 发明专利

JPS606304B2 失效
公开(公告)号：JPS606304B2
公开(公告)日：1985-02-16
申请号：JP14354577
申请日：1977-11-30
申请人： TOSHIBA CERAMICS CO
发明人： MATSUO HIDEYASU , UYAMA NAGATERU , TAGUCHI HIROSUKE , SHIBUYA TAKAYUKI
IPC分类号： C01B31/36 , C04B35/56 , C04B35/565 , C04B41/87 , C23C16/46 , H01L21/22

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