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1. 发明专利

JP2001068468A FILM FORMATION 失效
公开(公告)号：JP2001068468A
公开(公告)日：2001-03-16
申请号：JP24297499
申请日：1999-08-30
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SAKURAI YOSHINOBU , SHIOZAWA JUNICHI , MIKATA YUICHI , TSUNASHIMA YOSHITAKA , INUMIYA SEIJI , IMAI MASAYUKI , YONEKAWA TSUKASA
IPC分类号： H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To improve leak property of a formed insulation film by repeating a film formation process executed by supplying first and second film formation gases at each flow rate, and a process for controlling or stopping film formation reaction by reducing the gas flow rate of at least one of first and second film formation gases. SOLUTION: At a time t1, a silicon oxide film is formed on a wafer by supplying first film formation gas of SiCl4 gas and second film formation gas of N2O gas to each reaction tube at a specified flow rate. At a time t2, a flow rate is decreased to zero, for example, N2 gas which is purge gas is supplied to a reaction tube at a controlled specified flow rate, the inside of a reaction container is purged between the time t2 and the time t3, and at the time t3, the flow rate of N2 gas is reduced to zero. SiCl4 gas and N2O gas are supplied to a reaction container, film formation is carried out on a wafer. Thereafter a cycle of a supply process of SiCl4 gas and N2O gas and a process for stopping the film formation gases and purging by N2 gas is repeated.

2. 发明专利

JP2002164345A METHOD OF DEPOSITING FILM 失效
公开(公告)号：JP2002164345A
公开(公告)日：2002-06-07
申请号：JP2000361899
申请日：2000-11-28
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： INUMIYA SEIJI , TSUNASHIMA YOSHITAKA , MOROZUMI YUUICHIRO , SAI TOKIN , HASEBE KAZUHIDE
IPC分类号： C23C16/40 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a method of depositing film for precisely forming a tanta lum oxidation film having a small thickness that has very high in-plane uniform ity of the thickness, very small surface roughness, and moreover satisfactory electrical properties. SOLUTION: In the method of depositing film for forming the tantalum oxidation film on a surface of a treated body W in a treatment chamber 20 using raw material gas and oxidizer gas, an oxidizer applying step, in which the oxidizer gas is applied to a surface of the treated body, and a reaction step, in which the raw material gas is caused to act upon the applied oxidizer gas, so as to form the tantalum oxidation film, are repeated in this order for two or more times. As a result, a tantalum oxidation film with a small thickness that has very high in-plane uniformity of thickness can be formed precisely, with very small surface roughness, and moreover with satisfactory electrical characteristics, even at low temperatures.

3. 发明专利

JP2000100809A FILM-FORMING METHOD 失效
公开(公告)号：JP2000100809A
公开(公告)日：2000-04-07
申请号：JP28201398
申请日：1998-09-17
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP , TOSHIBA MICRO ELECTRONICS
发明人： SHIOZAWA JUNICHI , FUNO SAKAE , ISHIHARA KATSUNORI , SAKURAI YOSHINOBU , TSUNASHIMA YOSHITAKA , SAIDA SHIGEHIKO , INUMIYA SEIJI , OZAWA YOSHIO , IKEGAWA HIROAKI , YONEKAWA TSUKASA , SAITO YUKIMASA
IPC分类号： H01L21/316 , C23C16/24 , C23C16/42 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a film forming method for forming an insulating film made of layers continuously in the same film forming apparatus, and keeping good insulation in the insulating film, despite the film being thin. SOLUTION: In this film forming method, an insulating film made up of at least a silicon oxide film and a silicon nitride film is formed. The film forming method includes a silicon oxide film forming step for forming a silicon film by using SiCl4 gas which is included in part in a raw gas in a CVD method, a silicon nitride film forming step for forming a silicon nitride film by using an SiCl4 gas partly in a raw gas in a CVD method. These steps are carried out continuously in the same heat treating apparatus 2. Then, an insulating film made up of layers can be formed continuously in the same film forming apparatus, and moreover, insulating film with extremely satisfactory insulation can be obtained despite the film being thin.

4. 发明专利

JP2001338922A FILM FORMING METHOD AND FILM FORMING APPARATUS 失效
公开(公告)号：JP2001338922A
公开(公告)日：2001-12-07
申请号：JP2000370667
申请日：2000-12-05
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： INUMIYA SEIJI , TSUNASHIMA YOSHITAKA , HASEBE KAZUHIDE , OHATA YUUICHIRO , SAI TOKIN , SUGAWARA TAKUYA
IPC分类号： H01L21/205 , C23C16/02 , C23C16/40 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a film forming method capable of precisely forming a tantalum oxide film having a thin film thickness with a high uniformity in the film thickness even at a low temperature. SOLUTION: When forming the tantalum oxide film 52 on a surface of a body W to be treated, first an oxidizing agent of water vapor or the like is adhered to the entire surface of the body uniformly. Next by feeding a source gas consisting of, for example, PET(pentaethoxy tantalum) gas and reacting with the water vapor, an interlayer 50 consisting of the tantalum oxide film with a very thin and uniform film thickness is formed, and continuously in addition to the source gas, oxygen is made to flow and an original tantalum oxide film is deposited on the interlayer. As a result, the tantalum oxide film which is thin and highly uniform within the plane even at the low temperature is formed.

5. 发明专利

JP2001338920A FILM FORMING METHOD AND FILM FORMING APPARATUS 失效
公开(公告)号：JP2001338920A
公开(公告)日：2001-12-07
申请号：JP2000158421
申请日：2000-05-29
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： INUMIYA SEIJI , TSUNASHIMA YOSHITAKA , HASEBE KAZUHIDE , OHATA YUUICHIRO , SAI TOKIN
IPC分类号： C23C16/40 , C23C16/455 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a film forming method where the film forming rate is small even at a comparatively high temperature and an oxide film of a metallic material superior in control characteristics and electrical characteristics of the film thickness can be deposited by supplying a previously partly resolved source gas. SOLUTION: In a film forming method where the oxide film of the metallic material is deposited on a surface of a body W to be treated, first, the source gas, for example, pentaethoxy tantalum is heated to a prescribed temperature that is lower than the film forming temperature and the source gas is partially resolved. Next, this source gas is made to flow into a treating space S and the film is formed by making the gas come into contact with the heated body. As a result, the film forming rate is small even at the comparatively high temperature, and the oxide film of the metallic material superior in film thickness control characteristics and electrical characteristics can be deposited.

6. 发明专利

JP2011061071A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2011061071A
公开(公告)日：2011-03-24
申请号：JP2009210548
申请日：2009-09-11
申请人： Toshiba Corp , 株式会社東芝
发明人： AKIYAMA NAO , INUMIYA SEIJI
IPC分类号： H01L21/8238 , H01L21/28 , H01L21/283 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L29/1054 , H01L21/28088 , H01L21/823807 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which contains CMOSFET having work functions suitable for PMOS and NMOS, using a gate insulating film of high dielectric constant, and to provide a method for manufacturing the device.
SOLUTION: The manufacturing method of a semiconductor device includes a step for forming P-type and N-type regions, insulated from each other by an element separation region, on a main surface of a semiconductor substrate; a step for forming a first insulating film comprising a silicon oxide film or silicon oxide nitride film on the P-type and N-type regions; a step for forming a lanthanum oxide film on the first insulating film on the P-type region; a step for forming a second insulating film containing hafnium or zirconium on the lanthanum oxide film on the P-type region and the first insulating film on the N-type region; and a step for forming a titanium nitride film, which satisfies x/y x N
y on the second insulating film.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种包含具有适用于PMOS和NMOS的功函数的CMOSFET的半导体器件，使用高介电常数的栅极绝缘膜，并提供一种制造器件的方法。解决方案：半导体器件的制造方法包括在半导体衬底的主表面上形成由元件分离区彼此绝缘的P型和N型区的步骤; 在P型和N型区域上形成包含氧化硅膜或氧化硅氮化物膜的第一绝缘膜的步骤; 在P型区域上的第一绝缘膜上形成氧化镧膜的工序; 在P型区域上的氧化镧膜上形成含有铪或锆的第二绝缘膜和N型区域上的第一绝缘膜的工序; 以及在第二绝缘膜上与Ti x N y 形成满足x / y <1的氮化钛膜的工序。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010073865A Semiconductor device, and method for manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010073865A
公开(公告)日：2010-04-02
申请号：JP2008239200
申请日：2008-09-18
申请人： Toshiba Corp , 株式会社東芝
发明人： IKENO DAISUKE , AOYAMA TOMONORI , NAKAJIMA KAZUAKI , INUMIYA SEIJI , SHIMIZU TAKASHI , KOBAYASHI TAKUYA
IPC分类号： H01L21/8238 , H01L21/28 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/823807 , H01L21/823828
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same wherein an effective work function of a gate electrode can be stably set at a value near mid-gap of an Si band gap, in the semiconductor device having an NMOS and a PMOS such as an NMOSFET and a PMOSFET.
SOLUTION: The semiconductor device is configured by including: a semiconductor substrate which has a p-type diffusion layer and an n-type diffusion layer separated by an element isolating means; a gate insulating film formed on each of the p-type diffusion layer and the n-type diffusion layer of the semiconductor substrate; the gate electrode containing a metal film formed on the gate insulating film; a Ge inclusion formed at an interface between the gate insulating film and the metal film; and a silicon-contained layer formed on the metal film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供半导体器件及其制造方法，其中在半导体器件中可以将栅电极的有效功函数稳定地设定在接近中间间隙的值具有NMOS和诸如NMOSFET和PMOSFET的PMOS。解决方案：半导体器件通过包括：半导体衬底，其具有由元件隔离装置隔开的p型扩散层和n型扩散层; 形成在半导体衬底的p型扩散层和n型扩散层中的每一个上的栅极绝缘膜; 所述栅极电极含有形成在所述栅极绝缘膜上的金属膜; 形成在栅极绝缘膜和金属膜之间的界面处的Ge夹杂物; 以及形成在金属膜上的含硅层。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2010034440A Semiconductor device and method of manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010034440A
公开(公告)日：2010-02-12
申请号：JP2008197370
申请日：2008-07-31
申请人： Toshiba Corp , 株式会社東芝
发明人： KANEKO AKIO , INUMIYA SEIJI
IPC分类号： H01L29/78 , H01L29/423 , H01L29/49
CPC分类号： H01L21/31604 , H01L21/28044 , H01L21/28194 , H01L21/28202 , H01L21/318 , H01L29/4916 , H01L29/518 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stabilizing film quality of a gate insulating film containing at least either of Hf and Zr; and to provide a method of manufacturing the same.
SOLUTION: The semiconductor device includes: a semiconductor layer; the gate insulating film formed on the semiconductor layer and containing at least either of Hf and Zr; and a gate electrode formed on the gate insulating film and containing carbonitride containing at least either of Hf and Zr.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够稳定包含Hf和Zr中的至少一种的栅极绝缘膜的膜质量的半导体器件; 并提供其制造方法。解决方案：半导体器件包括：半导体层; 所述栅绝缘膜形成在所述半导体层上并且包含Hf和Zr中的至少一种; 以及形成在所述栅极绝缘膜上并含有包含Hf和Zr中的至少一种的碳氮化物的栅电极。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2006128380A Method and apparatus for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法和装置
公开(公告)号：JP2006128380A
公开(公告)日：2006-05-18
申请号：JP2004314154
申请日：2004-10-28
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKINE KATSUYUKI , INUMIYA SEIJI , SATO MOTOYUKI , KANEKO AKIO , EGUCHI KAZUHIRO
IPC分类号： H01L21/31 , H01L21/265 , H01L21/316 , H01L21/318 , H05H1/00
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67069 , H01L22/14
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method and a manufacturing apparatus of a semiconductor device capable of suppressing variations in film thickness and the amount of impurities between semiconductor wafers and between lots for obtaining stable element characteristics in plasma surface reforming and an impurity introduction process. SOLUTION: There are provided: a process for measuring the light intensity of at least one kind of wavelength in light emitted from plasma, or incidence power and reflection power in addition to the light intensity when one of nitriding treatment, oxidation treatment, and impurity introduction is performed onto the surfaces of a plurality of semiconductor substrates; a process for calculating exposure time for performing exposure to plasma for each semiconductor substrate, based on the light intensity, or the light intensity, the incident power, and the reflection power obtained by the measurement; and a process for exposing each semiconductor substrate to plasma based on the calculated exposure time to perform one of the nitriding treatment, oxidation treatment, and impurity introduction. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够抑制等离子体表面改性中的稳定元素特性的膜厚变化和半导体晶片间杂质量之间的杂质的制造方法和制造装置，以及杂质引入过程。解决方案：提供了一种用于测量从等离子体发射的光中的至少一种波长的光强度或除了光强度之外的入射功率和反射功率的过程，当氮化处理，氧化处理，并且在多个半导体基板的表面上进行杂质引入; 基于通过测量获得的光强度或光强度，入射功率和反射功率，计算用于对每个半导体衬底进行等离子体曝光的曝光时间的处理; 以及基于所计算的曝光时间将每个半导体衬底暴露于等离子体以进行氮化处理，氧化处理和杂质引入之一的工艺。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2003249649A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：JP2003249649A
公开(公告)日：2003-09-05
申请号：JP2002049464
申请日：2002-02-26
申请人： TOSHIBA CORP
发明人： NISHIYAMA AKIRA , INUMIYA SEIJI
IPC分类号： H01L29/78 , H01L21/265 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing it that uses a high dielectric material as a gate insulation film while formation of an interfacial oxide layer is restrained. SOLUTION: This semiconductor device comprises a semiconductor layer (10); a gate insulation film (12) of oxide containing a metal element, which is formed on the semiconductor layer, and in which content of at least one of nitrogen (N) and aluminum (Al) in both ends of the film is relatively higher than that in the center as viewed in a direction parallel to the film surface; and a gate electrode (13) formed on the gate insulation film. COPYRIGHT: (C)2003,JPO

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