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1. 发明专利

JP2008283220A Forming method of tungsten film 有权
标题翻译：形成膜的方法
公开(公告)号：JP2008283220A
公开(公告)日：2008-11-20
申请号：JP2008209259
申请日：2008-08-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAZAKI HIDEAKI , TACHIBANA MITSUHIRO , OKUBO KAZUYA , SUZUKI KENJI , KOUNO YUMIKO
IPC分类号： C23C16/30 , H01L21/285 , C23C16/08 , C23C16/52 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/76876 , H01L21/76877
摘要： PROBLEM TO BE SOLVED: To provide a forming method of a tungsten film which forms the tungsten film in a recess formed at a workpiece such as a semiconductor wafer or the like, and to embed tungsten excellently in the recess formed on an Si substrate.
SOLUTION: The forming method of the tungsten film which includes a process of mounting an Si substrate W in which a barrier film 3 composed of an MO-TiN film is formed in a treatment container 50, a repetition process of repeatedly supplying WF
6 gas and SiH
4 gas alternately to the treatment container 50, a process of forming a first tungsten film 5 on the barrier film 3, and a process of forming a second tungsten film 6 on the first tungsten film 5 by simultaneously supplying the WF
6 gas and H
2 gas to the treatment container 50 is characterized in that in the repetition process, the amount of adsorption to the barrier film 3 of the WF
6 gas is saturated in such a way that a temperature of the Si substrate W is kept at 150°C or higher and 350°C or lower, and that the amount of the supply of the WF
6 gas is set at 133 Pa sec or longer and 10 kPa sec or shorter.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供在形成在诸如半导体晶片等的工件上的凹部中形成钨膜的钨膜的形成方法，并且将钨优异地嵌入形成在Si上的凹部中基质。解决方案：包括安装Si衬底W的方法的钨膜的形成方法，其中在处理容器50中形成由MO-TiN膜构成的阻挡膜3，重复地提供WF 气体和SiH气体交换到处理容器50中，在阻挡膜3上形成第一钨膜5的工艺和形成第二钨的工艺通过向处理容器50同时供给WF SB 6气体和H SB 2气体，第一钨膜5上的膜6的特征在于，在重复过程中，对WF SB 6气体的阻挡膜3的吸附以使Si基板W的温度保持在150℃以上且350℃以下的方式饱和， WF气体的供给量设定为133Pa·sec以上且10kPa·秒以下。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2005217176A Semiconductor device and forming method of laminated film 审中-公开
标题翻译：半导体器件和层压膜的形成方法
公开(公告)号：JP2005217176A
公开(公告)日：2005-08-11
申请号：JP2004021924
申请日：2004-01-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SUZUKI KENJI , TEI MOTOICHI , OKUBO KAZUYA
IPC分类号： H01L21/285 , C23C16/42 , H01L21/28 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： C23C16/30 , C23C16/42 , H01L21/28088 , H01L29/4966
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of controlling a threshold voltage by controlling the work function of a gate electrode material while dissolving the resistance decline of a gate electrode and the degradation of a gate insulating film by F. SOLUTION: A gate electrode 3 formed through the gate insulating film 2 on an Si substrate 1 is provided with a W compound film 3a containing W and at least one kind of Si and N formed by CVD using W(CO) 6 gas and at least one kind of a gas containing Si and the gas containing N, and the work function of the W compound film 3a is controlled by the contents of Si and N of the W compound film 3a. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体器件，其能够通过控制栅电极材料的功函数来控制阈值电压，同时解决栅电极的电阻下降和栅绝缘膜的劣化。 P>解决方案：在Si衬底1上通过栅极绝缘膜2形成的栅电极3设置有W化合物膜3a，其包含W和W（CO）通过CVD形成的至少一种Si和N， 6气体和含有Si的气体和含有N的气体的至少一种气体，并且W化合物膜3a的功函数由W化合物膜3a的Si和N的含量控制。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2002289557A FILM FORMING METHOD 审中-公开
公开(公告)号：JP2002289557A
公开(公告)日：2002-10-04
申请号：JP2002026492
申请日：2002-02-04
申请人： TOKYO ELECTRON LTD
发明人： HASHIMOTO TAKESHI , MATSUSE KIMIHIRO , OKUBO KAZUYA , TAKAHASHI TAKESHI
IPC分类号： C23C16/01 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a film forming method capable of improving the reproducibility of film forming, relaxing film forming stress and preventing the dispersion of oxygen into films. SOLUTION: This method has a preprocessing step for applying precoating into a treatment chamber 20 by making different gases for film forming successively flow for executing film forming in the state of not installing an object W to be treated inside the treatment chamber, when continuously forming two different kinds of films on the surface of the object to be treated in the same treatment chamber; a film forming step for successively continuously performing different kinds of film forming by making the different gases for film forming successively flow in the state of installing the object to be treated inside the treatment chamber continuously to such preprocessing; and a postprocessing step for sticking silicon on the object to be treated by making a silane gas flow continuously to this film forming step. Thus, reproducibility in film forming is kept high and film forming stress is suppressed.

4. 发明专利

JP2011166160A Method of forming multilayer film 审中-公开
标题翻译：形成多层膜的方法
公开(公告)号：JP2011166160A
公开(公告)日：2011-08-25
申请号：JP2011062278
申请日：2011-03-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SUZUKI KENJI , TEI MOTOICHI , OKUBO KAZUYA
IPC分类号： H01L21/285 , C23C16/16 , H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a multilayer film forming method, that can form a multilayer film, in which constituent films have different compositions, with extremely high efficiency without causing troubles such as oxidation. SOLUTION: In the method of forming the multilayer film: a substrate 1 is placed in a processing chamber; film forming raw materials including a raw material containing at least metal carbonyl are introduced into the processing chamber; and the multilayer film including a plurality of films 6a, 6b containing a metal in the metal carbonyl is formed on the substrate 1 by CVD. The films included in the multilayer film are continuously formed in the same processing chamber while changing raw material kinds and/or film forming conditions, to form the multilayer film in which the constituent films have different compositions. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够以非常高的效率形成构成膜具有不同组成的多层膜，而不会引起诸如氧化的问题的多层膜形成方法。解决方案：在形成多层膜的方法中：将基板1放置在处理室中; 包含含有至少金属羰基的原料的成膜原料被引入到处理室中; 并且通过CVD在基板1上形成包含多个在金属羰基中含有金属的膜6a，6b的多层膜。包含在多层膜中的膜在改变原料种类和/或成膜条件的同时，在相同的处理室中连续形成，以形成组成膜具有不同组成的多层膜。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2000150416A TUNGSTEN SILICIDE FILM AND ITS FORMATION 失效
公开(公告)号：JP2000150416A
公开(公告)日：2000-05-30
申请号：JP10594699
申请日：1999-04-13
申请人： TOKYO ELECTRON LTD
发明人： OKUBO KAZUYA , TAKAHASHI TAKESHI , AOKI KIMIYA , MATSUSE KIMIHIRO
IPC分类号： H01L21/3205 , C23C16/42 , H01L21/24 , H01L21/28 , H01L21/285 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To orient the tungsten silicide crystals of a silicon-rich tungsten silicide layer in the same direction by adding a gas containing phosphorus atoms to a source gas in the first step of forming the silicide layer. SOLUTION: A silicon oxide film 2 which becomes a gate insulating film is formed on a silicon substrate 1, and a polysilicon layer 3 is formed on the film 2. Then a tungsten silicide layer 4 is formed on the layer 3 in such a state that the layer 4 is divided into a lower layer 5 and an upper layer 6. The lower layer 5 is made of a silicon-rich tungsten silicide by adding a gas containing phosphorus atoms to a source gas, such as the phosphine gas, etc., and the upper layer 6 is made of a tungsten-rich tungsten silicide. Therefore, the crystals of the layer 4 can be oriented in the same direction.

6. 发明专利

JPH10247627A FILM FORMING METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH10247627A
公开(公告)日：1998-09-14
申请号：JP6545397
申请日：1997-03-04
申请人： TOKYO ELECTRON LTD
发明人： HASHIMOTO TAKESHI , MATSUSE KIMIHIRO , OKUBO KAZUYA , TAKAHASHI TAKESHI
IPC分类号： H01L21/28 , C23C16/44 , C23C16/455 , H01L21/205 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a film forming method with which a film can be formed in an excellent reproducible manner, film forming stress can be relaxed and the diffusion of oxygen into the film under manufacture can be prevented. SOLUTION: When at least two different types of films are continuously formed on the surface of the material W to be treated in the same treatment chamber 20, a film forming method contains a pretreatment step, in which precoating is provided in the treatment chamber 20 by allowing to successively flow different types of film forming gas into the treatment chamber 20 before taking in the material W to be treated, a film forming step with which different types of films are successively formed by allowing different types of film forming gas to flow in the state wherein the material W to be treated is carried in the treatment chamber 20, and an after treatment step in which silicon is adhered to the material to be treated by flowing silane gas. As a result, the reproducibility when films are formed can be maintained high, and film forming stress can be suppressed.

7. 发明专利

JPH10242076A FILM LAMINATION STRUCTURE AND ITS FORMING METHOD 失效
公开(公告)号：JPH10242076A
公开(公告)日：1998-09-11
申请号：JP5699497
申请日：1997-02-25
申请人： TOKYO ELECTRON LTD
发明人： KOIZUMI MASAHITO , OKUBO KAZUYA , TAKAHASHI TAKESHI , HASHIMOTO TAKESHI , MATSUSE KIMIHIRO
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/52 , H01L29/423 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide film lamination structure which can prevent impurities from nonuniformly diffusing from a lower polycrystalline silicon layer to an upper tungsten silicide layer. SOLUTION: When film lamination structure is formed on a workpiece W, this structure is constituted as a gate electrode 8, by a first polycrystalline silicon layer 10 doped with impurities and a first tungsten silicide layer 12 doped with the same impurities or the same type impurities. Thereby impurities in the first tungsten silicide layer 12 is prevented from becoming nonuniform.

8. 发明专利

JP2001196326A METHOD OF FORMING TUNGSTEN SILICIDE FILM AND METHOD OF MANUFACTURING GATE ELECTRODE/WIRING 失效
公开(公告)号：JP2001196326A
公开(公告)日：2001-07-19
申请号：JP2000002217
申请日：2000-01-11
申请人： TOKYO ELECTRON LTD
发明人： MATSUDO MASAHIKO , SUZUKI KENJI , OKUBO KAZUYA
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L29/49 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To solve a problem that a void V is formed inside an electrode or a wiring of polyside structure in a formation stage in which the electrode and the wiring are formed, and with a reduction in size and resistance of an electrode and a wiring, the adverse effect of the void V gets actualized to deteriorate the manufacture of the electrode and wiring in yield. SOLUTION: A tungsten silicide film is formed through such a manner that when a tungsten silicide layer is formed on a polysilicon layer, phosphorus atom-containing gas is added to reactive gas in an initial stage in which the tungsten silicide layer is formed, and the amount of phosphorus atom-containing gas added to the reactive gas is set at 0.2 to 0.45 vol.%.

9. 发明专利

JP2003193233A METHOD FOR DEPOSITING TUNGSTEN FILM 审中-公开
公开(公告)号：JP2003193233A
公开(公告)日：2003-07-09
申请号：JP2002234273
申请日：2002-08-12
申请人： TOKYO ELECTRON LTD
发明人： OKUBO KAZUYA , TACHIBANA MITSUHIRO , HO SHIGERU , SUZUKI KENJI , SATO KOICHI , ISHIZUKA HODAKA
IPC分类号： C23C16/08 , C23C16/18 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for depositing a tungsten film by which the formation of voids and volcanos in sizes large enough to produce adverse effects on characteristics can be suppressed even if the diameter of a buried hole is small and burying characteristics can be improved. SOLUTION: When depositing the tungsten film on the surface of a wafer W in a treatment vessel 22 capable of evacuation, an initial tungsten film 76 is deposited by alternately carrying out a repetition of a reducing-gas-feeding step 70 for feeding reducing gas and a tungsten-gas-feeding step 72 for feeding tungsten-containing gas while interposing, between both steps, a purging step 74 for performing evacuation while feeding inert gas. By this method, the initial tungsten film as a nucleation layer having high film-thickness uniformity can be deposited. Accordingly, when the main tungsten film is deposited after that, the formation of the voids and volcanos in sizes large enough to produce adverse effects on characteristics can be suppressed even if, e.g. the diameter of the buried hole is small. COPYRIGHT: (C)2003,JPO

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