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1. 发明专利

JP2001068454A ETCHING METHOD AND PLASMA TREATING METHOD 失效
公开(公告)号：JP2001068454A
公开(公告)日：2001-03-16
申请号：JP24142799
申请日：1999-08-27
申请人： TOKYO ELECTRON LTD
发明人： HAGIWARA MASAAKI , INASAWA KOICHIRO , NAITO WAKAKO
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a method of etching an SiNx layer hard to oxidate a Cu layer. SOLUTION: A process gas contg. a gas composed of C, H and F, O2 and Ar is introduced into a process chamber 102 of a plasma treating apparatus 100, the process gas flow rate ratio is set to e.g. CH2F2/O2/Ar=20 sccm/10 sccm/100 sccm, the pressure in the process chamber 102 is set to about 50 mTorr, a high frequency power of 500 W at 13.56 MHz is applied to a lower electrode 108 on which a wafer W is laid, the process gas is turned to a plasma, an SiNx layer 206 formed on a Cu layer 204 is etched and the exposed Cu layer 204 is hardly oxidated and not implanted with C or F.

2. 发明专利

JP2005353698A Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：JP2005353698A
公开(公告)日：2005-12-22
申请号：JP2004170361
申请日：2004-06-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IGARASHI YOSHIKI , NAITO WAKAKO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching method which can prevent a change in etching characteristics due to a memory effect while maintaining the merits of all-in-one etching.
SOLUTION: After a first etching process, there is a deposit 70 attaching to the internal wall surface of a chamber 2. After carrying out cleaning for the purpose of removing the deposit 70, a second etching process is conducted. The cleaning is carried out using a mixed gas of O
2 gas and N
2 gas as a cleaning gas under the zero bias condition wherein no bias voltage is applied to a wafer W, with the internal pressure of the chamber being 50-200 mTorr, an O
2 flow rate being 5-15 mL/min, and an N
2 flow rate being 100-400 mL/min.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种可以防止由于记忆效应而导致的蚀刻特性变化同时保持一体蚀刻优点的蚀刻方法。解决方案：在第一蚀刻工艺之后，存在附着到室2的内壁表面的沉积物70.为了去除沉积物70进行清洁，进行第二蚀刻工艺。在零偏压条件下，使用O SB 2气体和N 2 SB 2气体的混合气体作为清洁气体进行清洗，其中没有偏置电压施加到晶片W ，室内压为50-200mTorr，O 2 流量为5-15mL / min，N 2 流量为100- 400 mL / min。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2001060582A ETCHING METHOD 失效
公开(公告)号：JP2001060582A
公开(公告)日：2001-03-06
申请号：JP23519199
申请日：1999-08-23
申请人： TOKYO ELECTRON LTD
发明人： KOBAYASHI KEN , HAGIWARA MASAAKI , NAITO WAKAKO , INASAWA KOICHIRO
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide an etching method which can prevent micro trenching, without using etching stoppers. SOLUTION: This etching method for etching an org. film layer, formed on a wafer in a hermetic processing chamber with a process gas fed into the process chamber, uses a processing gas contg. N2 and H2, and the pressure in the vacuum processing chamber is substantially 500-800 mTorr. If the processing gas contains at least N atom-contg. gas and a H atom-contg. gas and the pressure in the vacuum processing chamber is set to substantially 500 mTorr or higher, then micro trenching can be prevented, without using etching stoppers and the mask select ratio can be raised.

4. 发明专利

JP2007234770A Plasma etching method, and computer-readable recording medium 审中-公开
标题翻译：等离子体蚀刻方法和计算机可读记录介质
公开(公告)号：JP2007234770A
公开(公告)日：2007-09-13
申请号：JP2006052894
申请日：2006-02-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIROTSU MAKOTO , NAITO WAKAKO , SUZUKI YOSHINORI
IPC分类号： H01L21/3065 , G03F7/11 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching method capable of controlling a CD distribution in the subsequent etching of a film to be etched by controlling the distribution of etching characteristics, because a plasma can be controlled within a wide range when an antireflection film is etched. SOLUTION: The plasma etching method plasma-etches the antireflection film formed on a body to be treated W. The plasma etching method has a process for arranging the body to be treated successively forming a film to be etched, the antireflection film and a patterned photo-resist film on a substrate in a treating vessel 10 vertically fitting a first electrode 34 and a second electrode 16 on it oppositely. The plasma etching method further has the process for introducing a treating gas into the treating vessel 10, the process for generating the plasma by applying a high-frequency power to either of the first electrode 34 and the second electrode 16, and the process for applying a DC voltage to either electrode. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了提供一种能够通过控制蚀刻特性的分布来控制随后的待蚀刻膜蚀刻中的CD分布的等离子体蚀刻方法，因为等离子体可以在宽范围内被控制在抗反射膜被蚀刻。等离子体蚀刻方法等离子体蚀刻形成在待处理物体W上的抗反射膜。等离子体蚀刻方法具有将待处理体依次形成要被蚀刻的膜，防反射膜和处理容器10中的基板上的图案化光致抗蚀剂膜将第一电极34和第二电极16垂直地配合在其上。等离子体蚀刻方法还具有将处理气体引入处理容器10的过程，通过向第一电极34和第二电极16中的任一个施加高频电力来产生等离子体的工艺，以及应用到任一电极的直流电压。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007005377A Plasma etching method, control program, computer storage medium and plasma etching apparatus 有权
标题翻译：等离子体蚀刻方法，控制程序，计算机存储介质和等离子体蚀刻装置
公开(公告)号：JP2007005377A
公开(公告)日：2007-01-11
申请号：JP2005180720
申请日：2005-06-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAITO WAKAKO
IPC分类号： H01L21/3065 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching method capable of etching a layer to be etched into a more fine pattern than in a conventional technique, a control program, a computer storage medium, and a plasma etching apparatus.
SOLUTION: Plasma etching is performed while using an upper resist layer 104 as a mask, so that an opening having a tapered side wall surface and a dimension smaller than that of an opening of the upper resist layer 104 is formed on an intermediate layer 103. Next, plasma etching is performed while using the intermediate layer 103 as a substantial mask, so that an opening having a dimension smaller than that of an opening of the upper resist layer 104 is formed on a lower organic film layer 102. Then, plasma etching is performed for the layer 101 to be etched while using the film layer 102 as a substantial mask.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体蚀刻方法，其能够比常规技术，控制程序，计算机存储介质和等离子体蚀刻装置蚀刻要蚀刻的层更精细的图案。解决方案：使用上抗蚀剂层104作为掩模进行等离子体蚀刻，使得具有锥形侧壁表面的开口和尺寸小于上抗蚀剂层104的开口的开口形成在中间体接下来，使用中间层103作为基本掩模进行等离子体蚀刻，使得在下部有机膜层102上形成尺寸小于上部抗蚀剂层104的开口的开口。然后，在使用膜层102作为基本掩模的同时，对要蚀刻的层101进行等离子体蚀刻。版权所有（C）2007，JPO＆INPIT

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