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1. 发明专利

JP2008258171A Planar light-emitting device 审中-公开
标题翻译：平面发光器件
公开(公告)号：JP2008258171A
公开(公告)日：2008-10-23
申请号：JP2008121294
申请日：2008-05-07
申请人： Shizuo Fujita , Yoichi Kawakami , Sharp Corp , シャープ株式会社 , 養一川上 , 静雄藤田
发明人： MORIOKA TATSUYA , ISHIDA SHINYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , FUJITA SHIZUO , KAWAKAMI YOICHI
IPC分类号： F21V8/00 , F21V9/40 , F21Y101/02 , H01L33/32 , H01L33/50 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a lighting system that facilitates setting of color balance, as well as, is high in electrical/optical conversion efficiency and luminance.
SOLUTION: This planar light emitting device is provided with a light source 11 emitting a primary light; and a wavelength conversion part 12, comprising a plurality of phosphors, each absorbing the primary light to emit secondary light, having a peak wavelength longer than the peak wavelength of the primary light. The wavelength conversion part has an absorption band where the secondary light emitted from at least one of the phosphors is absorbed by the other phosphors and is structured, such that the plurality of phosphors comprise a plurality of cells arranged, in a planar shape that does not overlap one another in the optical path direction.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种便于设置色平衡的照明系统，以及高的电/光转换效率和亮度。解决方案：该平面发光器件设置有发射初级光的光源11; 以及波长转换部12，其包括多个荧光体，每个荧光体吸收初级光以发射次级光，其峰值波长比初级光的峰值波长长。波长转换部分具有吸收带，其中从至少一个荧光体发射的二次光被另一个荧光体吸收并且被构造成使得多个荧光体包括以不平行形状排列的多个单元在光路方向上彼此重叠。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009044137A Light-emitting device and phosphor 有权
标题翻译：发光装置和磷光体
公开(公告)号：JP2009044137A
公开(公告)日：2009-02-26
申请号：JP2008176504
申请日：2008-07-07
申请人： Masafumi Harada , Yoichi Kawakami , Yusuke Mori , Takatomo Sasaki , Sharp Corp , シャープ株式会社 , 考友佐々木 , 雅史原田 , 養一川上 , 勇介森
发明人： ISHIDA SHINYA , MORIOKA TATSUYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： H01S5/022 , C09K11/08 , C09K11/62 , C09K11/64 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/50 , H01S5/026
CPC分类号： Y02B20/181
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device provided with a light source for emitting primary light and a phosphor for absorbing the primary light and emitting secondary light, capable of emitting white light of high luminance, low power consumption and long service life with few damages on an environment. SOLUTION: A fluorescent material included in the phosphor provided to the light-emitting device is the particulate crystal of a III-V compound semiconductor, wherein the phosphor has three layers, and the layers are laminated so as to reduce the size of the fluorescent material from the incidence side of the primary light to the emission side thereof. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光装置，其具有用于发射一次光的光源和用于吸收初级光和发出次级光的荧光体，能够发出高亮度，低功耗的白光，以及使用寿命长，环境损坏少。解决方案：提供给发光器件的荧光体中包含的荧光材料是III-V族化合物半导体的颗粒状晶体，其中磷光体具有三层，并且层压以减小尺寸荧光材料从初级光的入射侧到其发射侧。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2004071357A Lighting device 有权
公开(公告)号：JP2004071357A
公开(公告)日：2004-03-04
申请号：JP2002229110
申请日：2002-08-06
申请人： Shigeo Fujita , Shizuo Fujita , Yoichi Kawakami , Sharp Corp , シャープ株式会社 , 川上養一 , 藤田茂夫 , 藤田静雄
发明人： MORIOKA TATSUYA , ISHIDA SHINYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , FUJITA SHIZUO , KAWAKAMI YOICHI
IPC分类号： G02B6/00 , F21V5/00 , F21V5/04 , F21V7/00 , F21V7/20 , F21V8/00 , F21V9/08 , F21V29/00 , F21Y101/02 , H01L33/32 , H01L33/50 , H01L33/60 , H01L33/00
CPC分类号： A61B1/0653 , G02B6/005 , G02F2001/133614
摘要： PROBLEM TO BE SOLVED: To provide a lighting device capable of setting a color balance easily with high electro-optical conversion efficiency and high brightness.
SOLUTION: A lighting device 10 includes a light source 11 emitting a primary light, and a wavelength conversion portion 12 which absorbs the primary light and then emits a secondary light having a longer peak wavelength than that of the primary light. The wavelength conversion portion 12 is laminated in order of an optical direction from red 13, green 14, and blue phosphor 15. Thus, every secondary light emitted from respective phosphors 13 to 15 is not absorbed by the other phosphors emitting the other colors, so that white light produced by mixing the three colors is emitted from the lighting device 10.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004083653A Light emitting device, phosphor and method for producing the same 审中-公开
公开(公告)号：JP2004083653A
公开(公告)日：2004-03-18
申请号：JP2002243502
申请日：2002-08-23
申请人： Shigeo Fujita , Masafumi Harada , Yoichi Kawakami , Yusuke Mori , Takatomo Sasaki , Sharp Corp , シャープ株式会社 , 佐々木考友 , 原田雅史 , 川上養一 , 森勇介 , 藤田茂夫
发明人： ISHIDA SHINYA , MORIOKA TATSUYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： B82B1/00 , B82B3/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/08 , C09K11/62 , C09K11/64 , H01S3/08 , H01S5/022 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device which comprises a light source for emitting a primary light and a phosphor absorbing the primary light and emitting a secondary light and has reduced damage to the environment, high luminance, low power consumption and a long life. SOLUTION: The light emitting device is obtained by using III-V semiconductor as a material for an illuminant and comprises the fine particle crystal of the semiconductor having ≤2,800 mm 3 volume. The light emitted by the fine particle crystal depends on the volume of the crystal and the wavelength range of the secondary light is regulated by making the fine particle crystal have a volume distribution. COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2011035315A Light emitting element, light emitting device, and method of manufacturing light emitting element 有权
标题翻译：发光元件，发光装置及制造发光元件的方法
公开(公告)号：JP2011035315A
公开(公告)日：2011-02-17
申请号：JP2009182615
申请日：2009-08-05
申请人： Sharp Corp , シャープ株式会社
发明人： ISHIDA SHINYA , TANI YOSHIHIKO , MASAMURA NAOKI , HANAOKA DAISUKE
IPC分类号： H01S5/028 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a light emitting element wherein amounts of extension of end surface coat films, formed on a resonator end surface, extending around to a principal surface are controlled to a designed amount, to provide a method of manufacturing the light emitting element that can easily obtain the light emitting element, and to provide a light emitting device including the light emitting element. SOLUTION: When the end surface coat films 16a, 16b are formed of a dielectric on the resonator end surface of the light emitting element 1, they are formed to partially extend around to the principal surface. Further, markers 15a, 15b are formed of metal on the principal surface. When ends of the end surface coat films 16a, 16b are on the markers, the ends are visible. Consequently, the amounts of extension of the end surface coat films 16a, 16b can be confirmed by viewing the markers 15a, 15b. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种发光元件，其中形成在谐振器端面上的端面涂层膜的延伸量延伸到主表面，以提供制造方法可以容易地获得发光元件的发光元件，以及提供包括该发光元件的发光器件。解决方案：当端面涂层膜16a，16b由发光元件1的谐振器端面上的电介质形成时，它们形成为部分地延伸到主表面。此外，标记物15a，15b由主表面上的金属形成。当端面涂层膜16a，16b的端部在标记上时，端部是可见的。因此，可以通过观察标记物15a，15b来确认端面涂层膜16a，16b的延伸量。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2007305635A Nitride semiconductor light-emitting element 审中-公开
标题翻译：氮化物半导体发光元件
公开(公告)号：JP2007305635A
公开(公告)日：2007-11-22
申请号：JP2006129792
申请日：2006-05-09
申请人： Sharp Corp , シャープ株式会社
发明人： HANAOKA DAISUKE
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide an end face emitting nitride semiconductor light-emitting element capable of forming a high-dislocation density region and a low-dislocation density region without being affected by surface flatness in a nitride semiconductor growth layer, where a plurality of nitride semiconductor thin films are laminated on a wafer in a plane.
SOLUTION: When manufacturing the nitride compound semiconductor light-emitting element by forming a layer by a nitride semiconductor on a substrate, where dislocation density is distributed in a plane, and a semiconductor layer that becomes a substrate, a stripe shape is formed so that the width of a resonator end face side becomes larger and the width of a center becomes narrower.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够形成高位错密度区域和低位错密度区域的端面发光氮化物半导体发光元件，而不受氮化物半导体生长层中的表面平坦度的影响，其中在平面中的晶片上层叠多个氮化物半导体薄膜。解决方案：通过在基板上将位错密度分布在平面中的氮化物半导体形成层和形成基板的半导体层来制造氮化物化合物半导体发光元件时，形成条形使得谐振器端面侧的宽度变大并且中心的宽度变窄。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006140441A Method and apparatus for manufacturing nitride semiconductor laser light source 审中-公开
标题翻译：用于制造氮化物半导体激光光源的方法和装置
公开(公告)号：JP2006140441A
公开(公告)日：2006-06-01
申请号：JP2005262785
申请日：2005-09-09
申请人： Sharp Corp , シャープ株式会社
发明人： HANAOKA DAISUKE , ISHIDA SHINYA , OGAWA ATSUSHI , TANI YOSHIHIKO , ISHIKURA TAKURO
IPC分类号： H01S5/022 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor laser light source which can emit light over a long term, even in an high-temperature atmosphere, and to provide a manufacturing apparatus for the nitride semiconductor laser light source.
SOLUTION: In the manufacturing method of the nitride semiconductor laser light source, the nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip and a cap covering the laser chip. The laser chip is sealed in a closed vessel made up of the stem and the cap. The method comprises an ashing step of exposing the laser chip, the stem, or the surface of the cap to ozones or excited oxygen atoms to clean process the laser chip, the stem, or the surface of the cap; and a capping step of supplying first gas to the laser cap, the stem, and the surface of the cap, after the ashing step and sealing the laser chip in the vessel made up of the stem and the cap in an atmosphere of the first gas.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供即使在高温环境下长时间发光的氮化物半导体激光光源的制造方法，也可以提供氮化物半导体激光光源的制造装置。解决方案：在氮化物半导体激光源的制造方法中，氮化物半导体激光光源具有氮化物半导体激光芯片，用于安装激光芯片的杆和覆盖激光芯片的盖。激光芯片密封在由阀杆和盖子组成的密闭容器中。该方法包括将激光器芯片，杆或表面暴露于臭氧或激发的氧原子以清洁处理激光芯片，杆或盖的表面的灰化步骤; 以及在灰化步骤之后，在第一气体的气氛中将激光芯片密封在由杆和盖组成的容器中的激光器芯片的第一气体供应到激光器盖，杆和盖的表面的封盖步骤。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005209801A Nitride semiconductor laser apparatus 有权
标题翻译： NITRIDE SEMICONDUCTOR激光设备
公开(公告)号：JP2005209801A
公开(公告)日：2005-08-04
申请号：JP2004013327
申请日：2004-01-21
申请人： Sharp Corp , シャープ株式会社
发明人： ITO SHIGETOSHI , HANAOKA DAISUKE
IPC分类号： H01S5/022 , H01S5/00 , H01S5/02 , H01S5/024 , H01S5/223 , H01S5/323 , H01S5/343
CPC分类号： H01S5/32341 , H01L2224/48091 , H01L2224/48247 , H01S5/0021 , H01S5/02212 , H01S5/02484 , H01S5/2231 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser apparatus wherein deterioration due to surge can be dissolved or reduced, or the deterioration due to surge is hard to be generated.
SOLUTION: The semiconductor laser apparatus is provided with a conductive stem 101, a sub-mount 102 fixed to the stem 101, a nitride semiconductor laser chip 103 mounted to the sub-mount 102, pins 104 and 105 with electric insulation secured to the stem 101, a wire connecting the pin 104 with a p electrode of the nitride semiconductor laser chip 103, a wire connecting the pin 105 with an n electrode of the nitride semiconductor laser chip 103, and a cap 106 that covers the wires, the nitride semiconductor laser chip 103 and the sub-mount 102 and is secured to the stem 101.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体激光装置，其中由于浪涌引起的劣化可以被溶解或降低，或者由于浪涌引起的劣化难以产生。解决方案：半导体激光设备设置有导电杆101，固定到杆101的子座102，安装到子座102的氮化物半导体激光器芯片103，具有电绝缘的销104和105 连接销钉104与氮化物半导体激光器芯片103的ap电极的导线，将引脚105与氮化物半导体激光器芯片103的n电极连接的线以及覆盖电线的帽106的线，氮化物半导体激光器芯片103和子安装件102并且固定到杆101.版权所有：（C）2005，JPO＆NCIPI

9. 发明专利

JP2012094922A Assembly apparatus 审中-公开
标题翻译：装配装置
公开(公告)号：JP2012094922A
公开(公告)日：2012-05-17
申请号：JP2012030420
申请日：2012-02-15
申请人： Sharp Corp , シャープ株式会社
发明人： ITO SHIGETOSHI , TAKATANI KUNIHIRO , HANAOKA DAISUKE , TSUDA YUZO
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide an assembly apparatus capable of assembling a semiconductor laser device having a semiconductor laser element whose stability of lifetime is made satisfactory by restricting the HO concentration in enclosure atmosphere closed by using a cap.SOLUTION: The assembly apparatus comprises: an assembling chamber which can be sealed from the outside, and where an assembly process is performed in which a cap for sealing a nitride semiconductor laser element with a gas is bonded on a stem in which the nitride semiconductor laser element comprising nitride semiconductor layers stacked are laminated; a moisture concentration control part for controlling the moisture concentration in gas atmosphere in the assembling chamber to be equal to or less than 400 ppm; a first pressure adjustment part for adjusting the pressure in the assembling chamber; a load lock chamber capable of being sealed from ambient air and adjacent to the assembling chamber; and a second pressure adjustment part for adjusting the pressure in the load lock chamber. The second pressure adjustment part is a vacuum pump.
摘要翻译：解决的问题：提供一种组装装置，其能够组装具有半导体激光元件的半导体激光元件，其半导体激光元件的寿命稳定性通过限制H 2 < 通过使用盖封闭封闭气氛中的浓度。组装装置包括：可从外部密封的组装室，并且在其上进行组装过程，其中用于将氮气半导体激光元件与气体密封的盖接合在杆上，其中层叠由氮化物半导体层构成的氮化物半导体激光元件，用于将组装室内的气体气氛中的水分浓度控制为等于或小于400ppm的水分浓度控制部; 用于调节组装室中的压力的第一压力调节部件; 能够与环境空气密封并且靠近组装室的装载锁定室; 以及用于调节负载锁定室中的压力的第二压力调节部件。第二压力调节部是真空泵。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2009135235A Cap member and semiconductor device using the same 有权
标题翻译： CAP会员和使用它的半导体器件
公开(公告)号：JP2009135235A
公开(公告)日：2009-06-18
申请号：JP2007309425
申请日：2007-11-29
申请人： Sharp Corp , シャープ株式会社
发明人： ISHIDA SHINYA , HANAOKA DAISUKE , HORIGUCHI TAKESHI
IPC分类号： H01S5/022
CPC分类号： H01S5/02212 , H01L2224/48091 , H01L2924/19107 , H01S5/02296 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a cap member that achieves improvement of manufacturing yields while alleviating degradation of reliability. SOLUTION: The cap member 100 has a cylindrical sidewall portion 101, a top face portion 102 that closes one end of the sidewall portion 101 and has a light-exit hole 102a formed therein to allow extraction of laser light emitted from a semiconductor laser device 30 to the outside, a light transmissive window 104 attached to the top face portion 102 such that the light-exit hole 102a is closed, and a flange 103 arranged at the other end of the sidewall portion 101 and welded on the upper face of a stem 1 on which the semiconductor laser device 30 is mounted. A groove 111 is formed in an inner surface of the top face portion 102, and this groove 111 forms a part 110, whose thickness is smaller than that of the other part, in a prescribed region of the top face portion 102. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在减轻可靠性降低的同时实现制造成品率的提高的盖部件。解决方案：盖构件100具有圆筒形侧壁部分101，封闭侧壁部分101的一端并具有形成在其中的出光孔102a的顶面部分102，以允许从半导体发射的激光的提取激光装置30到外部，附接到顶面部分102的光透射窗口104，使得出射孔102a关闭;以及凸缘103，凸缘103布置在侧壁部分101的另一端并焊接在上表面其上安装有半导体激光装置30的杆1。在顶面部102的内表面形成有槽111，该沟槽111在顶面部102的规定区域中形成厚度小于另一部分的部分110。版权所有（C）2009，JPO＆INPIT

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