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    • 8. 发明专利
    • Light emitting device, and manufacturing method thereof
    • 发光装置及其制造方法
    • JP2009054694A
    • 2009-03-12
    • JP2007218302
    • 2007-08-24
    • Sharp Corpシャープ株式会社
    • EGATANI MAKOTOMORIOKA TATSUYAKONISHI MASAHIRO
    • H01L33/50H01L33/54H01L33/56H01L33/60H01L33/62
    • H01L2224/48091H01L2924/00014
    • PROBLEM TO BE SOLVED: To provide a light emitting device extremely excelling in accuracy, composed by uniforming the content and distribution of a phosphor in a mold member, excelling in a light emission characteristic, small in chromaticity dispersion, and high in yield; and a manufacturing method thereof.
      SOLUTION: The light emitting device is composed by covering at least a part of a light emitting element on a substrate with a mold member. In the light emitting device, the mold member contains a phosphor-containing powder resin and a sealing resin; the phosphor-containing powder resin is powder formed by covering, with a resin, each surface of a phosphor emitting, when irradiated with excitation light, fluorescence having a wavelength larger than that of the excitation light; and the phosphor-containing powder resin is dispersed in the sealing resin. This application is also related to its manufacturing method.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 解决问题的方案为了提供一种通过使成型体中的荧光体的含量和分布均匀化而成的精度极高的发光元件,发光特性优异,色度分散小,产率高 ; 及其制造方法。 解决方案:发光器件通过用模具部件覆盖基板上的发光元件的至少一部分而构成。 在发光装置中,模具构件含有含磷粉末粉末树脂和密封树脂; 含有荧光体的粉末树脂是通过用树脂覆盖在用激发光照射具有比激发光的波长大的荧光体的荧光体的每个表面上形成的粉末。 并且含磷粉末树脂分散在密封树脂中。 该应用也与其制造方法有关。 版权所有(C)2009,JPO&INPIT
    • 9. 发明专利
    • Light emitting device
    • 发光装置
    • JP2007157831A
    • 2007-06-21
    • JP2005347996
    • 2005-12-01
    • Sharp Corpシャープ株式会社
    • MORIOKA TATSUYAKAWASAKI OSAMU
    • H01L33/32H01L33/50H01L33/54H01L33/60H01L33/62H01S5/022
    • H01L33/502H01L2224/45144H01L2224/48091H01L2224/48247H01L2224/48257H01L2924/00014H01L2924/00
    • PROBLEM TO BE SOLVED: To provide a light emitting device for assuring excellent average color rendering number (Ra) and special color rendering index (R9), while keeping higher theoretical limit efficiency with a comparatively simplified structure. SOLUTION: The light emitting device comprises a light emitting element having the light emitting peak wavelength of 350 nm to 420 nm, and a fluorescent material for radiating the fluorescent light beam having different light emitting peak wavelengths by absorbing the light from such light emitting element. The fluorescent material is formed of a semiconductor material which is controlled in the light emitting peak wavelength with transition between the band gaps, and is constituted with four or more fluorescent materials of different light emitting peak wavelengths. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种用于确保优异的平均显色数(Ra)和特殊显色指数(R9)的发光装置,同时以相对简化的结构保持较高的理论极限效率。 解决方案:发光器件包括发光峰值波长为350nm至420nm的发光元件,以及用于通过吸收来自该光的光来发射具有不同发光峰值波长的荧光的荧光材料 发光元件。 该荧光材料由控制在具有带隙之间的发光峰值波长的半导体材料形成,并且由四种或更多种不同发光峰值波长的荧光材料构成。 版权所有(C)2007,JPO&INPIT
    • 10. 发明专利
    • Lighting device and display device
    • 照明设备和显示设备
    • JP2004259466A
    • 2004-09-16
    • JP2003045799
    • 2003-02-24
    • Sharp Corpシャープ株式会社
    • MORIOKA TATSUYA
    • G02F1/13357F21S2/00H01S5/22H01S5/323H01S5/40
    • PROBLEM TO BE SOLVED: To provide a lighting device and a display device utilizing a semiconductor laser element and a phosphor, restraining variation of light-emitting strength influenced by ambient temperature.
      SOLUTION: The lighting device and the display device are composed of a plurality of semiconductor resonators (100) irradiating a laser beam having a plurality of resonance wavelengths, and phosphors (102) irradiating fluorescent light by absorbing the laser beam. The plurality of semiconductor resonators (100) are set so that resonance wavelengths of one or more of the semiconductor resonators exist within an absorption band of the phosphors (102).
      COPYRIGHT: (C)2004,JPO&NCIPI
    • 解决的问题:提供利用半导体激光元件和荧光体的照明装置和显示装置,抑制受环境温度影响的发光强度的变化。 解决方案:照明装置和显示装置由照射具有多个共振波长的激光束的多个半导体谐振器(100)和通过吸收激光照射荧光的荧光体(102)构成。 多个半导体谐振器(100)被设置为使得一个或多个半导体谐振器的谐振波长存在于荧光体(102)的吸收带内。 版权所有(C)2004,JPO&NCIPI