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    • 3. 发明专利
    • Semiconductor device manufacturing method and semiconductor device
    • 半导体器件制造方法和半导体器件
    • JP2013004865A
    • 2013-01-07
    • JP2011136474
    • 2011-06-20
    • Shinko Electric Ind Co Ltd新光電気工業株式会社
    • TANAKA KOICHIKURASHIMA NOBUYUKIIIZUKA HAJIMEKOYAMA TETSUYA
    • H01L21/60H01L23/12
    • H01L23/49816H01L21/4853H01L21/568H01L23/3135H01L25/105H01L2224/16225H01L2224/73253H01L2225/1023H01L2225/1058H01L2924/15311H01L2924/15331H01L2924/3511
    • PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device, which can form a connection pad having high connection reliability without causing smear and the like; easily respond to a narrow pitch; and achieve a POP structure at low cost.SOLUTION: A semiconductor device manufacturing method comprises: connecting a solder ball 5 mounted on a projection-like solder ball mount part 11 formed on a support plate 10 and having a pad diameter larger than a pad diameter of a connection pad 4 with the connection pad 4 through a circular truncated cone-shaped solder layer 5B formed from a solder ball 5 on the basis of a difference between the pad diameter of the solder ball mounting part 11 and the pad diameter of the connection pad 4; forming a mold resin layer 7 between a mounting surface of a circuit board 2 and the support plate 10; transforming the circular truncated cone-shaped solder 5B to the spherical solder layer 5B in a circular truncated cone-shaped via 6 by performing a reflow treatment after removing the support plate 10 to form the via 6 in the mold resin layer 7 along the circular truncated cone-shaped solder layer 5B; and exposing a part of the spherical solder layer 5B through the via 6.
    • 要解决的问题:提供一种半导体器件制造方法和半导体器件,其可以形成具有高连接可靠性而不引起涂片等的连接焊盘; 轻松响应狭窄的音调; 并以低成本实现POP结构。 解决方案:一种半导体器件制造方法,包括:将安装在形成于支撑板10上的凸出状焊球安装部11上的焊球5连接起来,焊盘直径大于连接焊盘4的焊盘直径, 基于焊锡球安装部分11的焊盘直径和连接焊盘4的焊盘直径之间的差,通过由焊球5形成的圆形截头圆锥形焊料层5B连接焊盘4; 在电路板2的安装表面和支撑板10之间形成模制树脂层7; 通过在去除支撑板10之后进行回流处理,将圆形截头圆锥形焊料5B转变成圆形截头圆锥形通孔6中的球形焊料层5B,以在模制树脂层7中沿圆截面形成通孔6 锥形焊料层5B; 并通过通孔6将一部分球形焊料层5B暴露出来。(C)2013,JPO&INPIT
    • 4. 发明专利
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • JP2009272512A
    • 2009-11-19
    • JP2008122998
    • 2008-05-09
    • Shinko Electric Ind Co Ltd新光電気工業株式会社
    • KOBAYASHI TOSHIOARAI SUNAOIIZUKA HAJIME
    • H01L23/12
    • H01L21/568H01L2224/04105H01L2224/12105
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for bonding (laminating) a semiconductor chip to an insulating layer by using the adhesive power of an insulating layer in providing a semiconductor embedded between insulators. SOLUTION: The method of manufacturing the semiconductor device includes: a step of forming, on the surface of a metallic layer 10 formed on one side of a support 12, a hole 18 for connecting to an electrode pad 32 of a semiconductor element 30; a step of laminating a non-cured insulating layer 20 on the surface of the metallic layer 10; a step of aligning the position of the electrode pad 32 to the position of the hole 18 formed in the metallic layer 10, and for loading the semiconductor element 30 on the insulating layer 20; a step of curing the insulating film 20; a step of removing a support 12; a step of removing the insulating film 20 at the position of the hole 18 formed in the metallic layer 10, and for forming a via hole 36 from which the electrode pad 32 is exposed; and a step of resin-sealing the loaded side face of the semiconductor element 30. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种制造半导体器件的方法,所述半导体器件通过在提供绝缘体中嵌入的半导体中使用绝缘层的粘合力将半导体芯片接合(层合)到绝缘层。 解决方案:制造半导体器件的方法包括:在形成在支撑体12的一侧的金属层10的表面上形成用于连接到半导体元件的电极焊盘32的孔18的步骤 30; 将非固化绝缘层20层压在金属层10的表面上的步骤; 将电极焊盘32的位置与形成在金属层10中的孔18的位置对准并将半导体元件30装载在绝缘层20上的步骤; 固化绝缘膜20的步骤; 去除支撑件12的步骤; 在形成在金属层10中的孔18的位置处去除绝缘膜20并形成电极焊盘32从其露出的通孔36的步骤; 以及树脂密封半导体元件30的负载侧面的步骤。版权所有(C)2010,JPO&INPIT
    • 5. 发明专利
    • Method of manufacturing substrate with built-in chip
    • 使用内置芯片制造基板的方法
    • JP2009283788A
    • 2009-12-03
    • JP2008135980
    • 2008-05-23
    • Shinko Electric Ind Co Ltd新光電気工業株式会社
    • IIZUKA HAJIMEKOBAYASHI TOSHIO
    • H05K3/36H01L23/12H05K3/46
    • H01L2224/16225H01L2224/73204
    • PROBLEM TO BE SOLVED: To solve such a problem of a conventional method of manufacturing a substrate with a built-in chip for performing inspections, such as, continuity tests with a completed substrate with a built-in chip. SOLUTION: After forming a first multi-layer wiring board 12 on one surface side of a first metal plate 10 by a build-up method, the electrical connection between a second pad 20 and a first pad 14 making contact with the first metal plate 10, in correspondence with each of the second pads, is checked by a continuity test between the second pad 20 and the first metal plate 10. Then, the insulation of wiring patterns connected to the first pad 14 is checked by the continuity test between the first pads 14 and 14, that are exposed by peeling the first metal plate 10, after bonding the second metal plate via an insulating layer which covers the entire surface on the other surface side with the first multi-layer wiring board 12. After that, a semiconductor chip is mounted on one board of the first multi-layer wiring board 10 and the second multi-layer wiring board, after performing the continuity test, in a similar manner as to that with respect to the second multi-layer wiring board that is bonded to the first multi-layer wiring board 12. Then, the other board is laminated on the chip-mounting surface of the one board. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了解决传统的用内置芯片制造基板的方法的问题,例如具有内置芯片的完成的基板的连续性测试。 解决方案:通过积聚方法在第一金属板10的一个表面侧上形成第一多层布线板12之后,第二焊盘20和与第一金属板10接触的第一焊盘14之间的电连接 通过第二焊盘20和第一金属板10之间的连续性测试来检查与每个第二焊盘相对应的金属板10。然后,通过连续性测试来检查连接到第一焊盘14的布线图案的绝缘 在通过剥离第一金属板10而暴露的第一焊盘14和14之间,在第二金属板经由覆盖另一表面侧的整个表面的绝缘层与第一多层布线板12接合之后。之后 在进行连续性试验之后,半导体芯片以与第二多层布线相同的方式安装在第一多层布线板10和第二多层布线基板的一个基板上 董事会 t接合到第一多层布线板12.然后,另一个板层压在一个板的芯片安装表面上。 版权所有(C)2010,JPO&INPIT
    • 6. 发明专利
    • Substrate with built-in chip
    • 基板与内置芯片
    • JP2008294330A
    • 2008-12-04
    • JP2007140140
    • 2007-05-28
    • Shinko Electric Ind Co Ltd新光電気工業株式会社
    • IIZUKA HAJIMEMACHIDA KIYOHIRO
    • H05K3/46H01L25/065H01L25/07H01L25/18
    • H01L2224/16225H01L2224/32225H01L2224/73204H01L2924/00
    • PROBLEM TO BE SOLVED: To attain thinning and high-densification, in a substrate with built-in chip wherein a chip is built in between a pair of substrates. SOLUTION: The substrate with built-in chip includes a semiconductor chip 110A, a first substrate 100 mounted with the semiconductor chip 110A, a second substrate 200 laminated on the first substrate 100, an electrode 112 which electrically connects the first and second substrates 100 and 200, and a sealing resin 115 arranged between the first and second substrates 100 and 200. An opening part 206 is formed in the second substrate 200. When the second substrate 200 is laminated on the first substrate 100, at least a part of the semiconductor chip 110A is in the opening part 206. The first substrate 100 is mounted with a built-in component having a shape larger than the semiconductor chip 110A. The built-in component is positioned at the part upper than the chip component, in the opening part. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:为了实现薄型化和高致密化,在具有内置芯片的基板中,其中芯片内置在一对基板之间。 解决方案:具有内置芯片的基板包括半导体芯片110A,安装有半导体芯片110A的第一基板100,层叠在第一基板100上的第二基板200,电连接第一和第二 基板100和200以及布置在第一和第二基板100和200之间的密封树脂115.在第二基板200中形成开口部206.当第二基板200层压在第一基板100上时,至少一部分 半导体芯片110A在开口部206中。第一基板100安装有具有比半导体芯片110A大的形状的内置部件。 内置元件位于开口部分中位于芯片组件上方的部分。 版权所有(C)2009,JPO&INPIT