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1. 发明专利

JP2014091670A Manufacturing apparatus of single crystal 审中-公开
标题翻译：单晶制造装置
公开(公告)号：JP2014091670A
公开(公告)日：2014-05-19
申请号：JP2012244780
申请日：2012-11-06
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： ODA MICHIAKI , TAKANO KIYOTAKA , IKEDA TAKECHIKA
IPC分类号： C30B29/20 , C30B15/10
CPC分类号： C30B15/10 , C30B29/16 , C30B29/20
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a single crystal for manufacturing an oxide single crystal such as a sapphire single crystal that can improve a crucible life even when a graphite holding jig is used.SOLUTION: A manufacturing apparatus 10 of a single crystal manufactures an oxide single crystal 17 from melt 15 obtained by heating and melting a raw material in a crucible 14 in a Czochralski method (CZ method). The manufacturing apparatus 10 of a single crystal includes a heater 22 for heating the raw material in the crucible 14, and a main chamber 11 for housing the crucible 14, the crucible 14 being held by a graphite holding jig 18 via a sacrificial material 23 made of a high melting point metal.
摘要翻译：要解决的问题：提供一种用于制造诸如蓝宝石单晶的氧化物单晶的单晶的制造装置，其即使在使用石墨保持夹具时也能够提高坩埚寿命。解决方案：单个制造装置10 晶体通过以Czochralski法（CZ法）将坩埚14中的原料加热熔融而获得的熔融物15制造氧化物单晶17。单晶的制造装置10包括用于加热坩埚14中的原料的加热器22和用于容纳坩埚14的主室11，坩埚14由石墨保持夹具18经由牺牲材料23保持，所述牺牲材料23制成的高熔点金属。

2. 发明专利

JP2014094847A Method for producing sapphire single crystal, and seed crystal 有权
标题翻译：生产鲷鱼单晶和种子晶体的方法
公开(公告)号：JP2014094847A
公开(公告)日：2014-05-22
申请号：JP2012246100
申请日：2012-11-08
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TAKANO KIYOTAKA , ODA MICHIAKI
IPC分类号： C30B29/20 , C30B15/36
CPC分类号： C30B15/36 , C30B15/10 , C30B29/20
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a sapphire single crystal which can satisfactorily seed a seed crystal so that the side surface and the like of the seed crystal are not melted when producing a sapphire single crystal by a device using a resistance heating heater.SOLUTION: In a method for producing a sapphire single crystal where a seed crystal is dipped in and pulled up from a molten liquid obtained by heating and melting a raw material with a resistance heating heater in a crucible comprising tungsten, molybdenum, or both tungsten and molybdenum as a main component by a CZ (Czochralski) method, a polished seed crystal is used as the seed crystal to be dipped in the molten liquid.
摘要翻译：要解决的问题：提供一种蓝宝石单晶的制造方法，其可以令人满意地种子晶种，以便通过使用电阻加热的装置制造蓝宝石单晶时籽晶的侧面等不熔化加热器。解决方案：在一种蓝宝石单晶的制造方法中，通过电阻加热加热器在包含钨，钼或两者的坩埚中加热熔化原料而获得的熔融液中浸入并拉出晶种以CZ（Czochralski）方法为主要成分的钨和钼，使用抛光晶种作为浸入熔融液中的晶种。

3. 发明专利

JP2008214118A Method for manufacturing semiconductor single crystal 审中-公开
标题翻译：制造半导体单晶的方法
公开(公告)号：JP2008214118A
公开(公告)日：2008-09-18
申请号：JP2007051630
申请日：2007-03-01
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： MORI TAKASHI , TAKANO KIYOTAKA , URANO MASAHIKO , NAKAMURA YASUSHI , MIZUISHI KOJI , YOKOTA KOUZO
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor single crystal by an MCZ method (magnetic field applied Czochralski method), by which the oxygen concentration in the crystal growth axis direction of a pulled semiconductor single crystal can be controlled to a desired value with a higher precision.
SOLUTION: In the method for manufacturing the semiconductor single crystal by the MCZ method, comprising pulling a semiconductor single crystal while applying a magnetic field to a raw material melt accommodated in a crucible by a magnetic field application device, in a pulling furnace of the semiconductor single crystal, the relation between the magnetic field center relative position, that is the relative position of the center of the magnetic field by the magnetic field application device to the surface of the raw material melt, and the oxygen concentration in a pulled semiconductor single crystal is previously searched, and the semiconductor single crystal is pulled while controlling the magnetic field center relative position on the basis of the relation between the magnetic field center relative position and the oxygen concentration so that the oxygen concentration in the axis direction of the semiconductor single crystal being pulled becomes a desired value.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过MCZ法（施加磁场施法斯基法）的半导体单晶的制造方法，通过该方法可以控制拉制的半导体单晶的晶体生长轴方向的氧浓度达到具有更高精度的期望值。解决方案：在通过MCZ方法制造半导体单晶的方法中，包括在通过磁场施加装置向容纳在坩埚中的原料熔体施加磁场的同时拉动半导体单晶，在拉制炉半导体单晶的磁场中心相对位置之间的关系，即磁场施加装置的磁场中心相对于原料熔体的表面的相对位置以及拉伸中的氧浓度先前搜索半导体单晶，并且基于磁场中心相对位置和氧浓度之间的关系来控制半导体单晶，同时控制磁场中心相对位置，从而使得半导体单晶的轴向方向上的氧浓度被拉制的半导体单晶成为期望值。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008105873A Single crystal manufacturing apparatus and single crystal manufacturing method 有权
标题翻译：单晶制造装置和单晶制造方法
公开(公告)号：JP2008105873A
公开(公告)日：2008-05-08
申请号：JP2006288360
申请日：2006-10-24
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TAKANO KIYOTAKA , URANO MASAHIKO , HOSHI RYOJI
IPC分类号： C30B29/06 , C30B15/20
CPC分类号： C30B15/203 , C30B15/14 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a single crystal manufacturing apparatus and a single crystal manufacturing method which are used for manufacturing a single crystal while easily stabilizing a crystal quality.
SOLUTION: The single crystal manufacturing apparatus 1 includes a chamber capable of being divided into a plurality of chambers 2, 20, 21, 22, 23 and is used for manufacturing the single crystal by a Czochralski method. At least one of the plurality of chambers 2, 20, 21, 22, 23 has a flow passage 31 for a circulation cooling medium, through which the circulation cooling medium flows to cool the chamber and measuring means 34, 35, 36 for measuring the inlet temperature and the outlet temperature of the flow passage 31 and the flow rate of the circulation cooling medium respectively. Further, the apparatus 1 includes a calculation means 37 for calculating the heat amount to be removed from the chamber and/or the ratio of the heat amount to be removed from the measured values of the inlet temperature, the outlet temperature, and the flow rate of the circulation cooling medium, and a pulling speed control means 38 for controlling the pulling speed of the single crystal on the basis of the calculated heat amount to be removed and/or the calculated ratio of the heat amount to be removed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于单晶制造的单晶制造装置和单晶制造方法，同时容易稳定晶体质量。解决方案：单晶制造装置1包括能够被分成多个室2,20,21,22,23的室，并且通过切克劳斯基法（Czochralski method）制造单晶。多个腔室2,20,21,22,23中的至少一个具有用于循环冷却介质的流动通道31，循环冷却介质流过冷却腔室，测量装置34,35,36用于测量入口温度和流路31的出口温度以及循环冷却介质的流量。此外，装置1包括计算装置37，用于计算从室中除去的热量和/或从入口温度，出口温度和流量的测量值中除去的热量的比率循环冷却介质的拉伸速度控制装置38，以及用于根据计算出的待除热热量和/或所计算的待除热量的比率来控制单晶的牵引速度的牵引速度控制装置38。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2014094842A Single crystal producing device 审中-公开
标题翻译：单晶生产设备
公开(公告)号：JP2014094842A
公开(公告)日：2014-05-22
申请号：JP2012245562
申请日：2012-11-07
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TAKANO KIYOTAKA , ODA MICHIAKI , MAEDA SHIGEMARU
IPC分类号： C30B29/20 , C30B15/00
CPC分类号： C30B29/20 , C30B15/10 , C30B15/14
摘要： PROBLEM TO BE SOLVED: To provide a single crystal producing device which can prevent melting of a sapphire single crystal during pulling up of the single crystal by a CZ (Czochralski) method.SOLUTION: A single crystal producing device, which pulls up a sapphire single crystal from a molten liquid obtained by heating and melting a raw material in a crucible comprising tungsten, molybdenum, or both tungsten and molybdenum as a main component by a CZ method, includes a resistance heating heater which encloses the crucible and heats the raw material in the crucible, and a main chamber in which the crucible is placed, and has a cylindrical heat shielding body which extends from above the crucible to the molten liquid in the crucible and whose bottom external diameter is smaller than the internal diameter of the crucible and whose bottom internal diameter is larger than the target diameter of the pulled-up sapphire single crystal.
摘要翻译：要解决的问题：提供一种单晶产生装置，其可以通过CZ（Czochralski）方法在单晶提拉期间防止蓝宝石单晶熔化。解决方案：单晶产生装置，其拉起蓝宝石单通过利用CZ法将包含钨，钼或钨和钼两者的坩埚中的原料加热熔融而获得的熔融液体的结晶体包括：电阻加热加热器，其包围坩埚并将原料加热坩埚和坩埚放置的主室，并且具有从坩埚上方延伸到坩埚内的熔融液体并且其底部外径小于坩埚内径的圆筒形的热屏蔽体，底部内径大于上拉蓝宝石单晶的目标直径。

6. 发明专利

JP2014091663A Charging method, raw material and single crystal production device 有权
标题翻译：充电方法，原料和单晶生产装置
公开(公告)号：JP2014091663A
公开(公告)日：2014-05-19
申请号：JP2012244545
申请日：2012-11-06
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： ODA MICHIAKI , TAKANO KIYOTAKA
IPC分类号： C30B29/20 , C30B15/02 , C30B15/10
CPC分类号： C30B15/02 , C30B15/10 , C30B29/20
摘要： PROBLEM TO BE SOLVED: To provide a method capable of charging a raw material efficiently without the need for cutting off the power source of a heater, when the raw material is charged into a crucible, in production of a sapphire single crystal.SOLUTION: In a method for charging a raw material 24 into a crucible 14 when a sapphire single crystal is produced by a CZ method, a single crystal production device including a heater 22 for heating the raw material in the crucible 14, a main chamber 11 where the crucible 14 is arranged, and a pull chamber connected dividably by a gate valve on the main chamber 11 is used as a device for producing the sapphire single crystal. In the charging method, when charging the raw material 24, a charging tool 23 for holding the raw material 24 is suspended from the pull chamber, and the raw material 24 is charged into the crucible 14.
摘要翻译：要解决的问题：为了提供一种能够有效地对原料充电的方法，而不需要切断加热器的电源，当将原料装入坩埚时，在蓝宝石单晶的制造中。解决方案：在当通过CZ方法制造蓝宝石单晶时，将原料24装入坩埚14的方法，包括用于加热坩埚14中的原料的加热器22的单晶制造装置，坩埚中的主室11 并且通过主室11上的闸阀可分开地连接的拉动室用作制造蓝宝石单晶的装置。在充电方法中，当对原材料24进行充电时，用于保持原料24的充电工具23从拉出室悬挂，原料24被装入坩埚14中。

7. 发明专利

JP2010132500A Upper heater for manufacturing single crystal, apparatus and method for manufacturing single crystal 有权
标题翻译：用于制造单晶的上部加热器，制造单晶的装置和方法
公开(公告)号：JP2010132500A
公开(公告)日：2010-06-17
申请号：JP2008310433
申请日：2008-12-05
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TAKANO KIYOTAKA
IPC分类号： C30B15/14 , H05B3/03 , H05B3/14 , H05B3/64
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068
摘要： PROBLEM TO BE SOLVED: To provide an upper heater for manufacturing a single crystal, which is capable of efficiently controlling crystal defects of a single crystal; and to provide an apparatus and method for manufacturing a high-quality single crystal by using the upper heater for manufacturing a single crystal, efficiently controlling crystal defects, and improving the controllability of the oxygen concentration. SOLUTION: The upper heater is provided at least with electrodes for supplying a current and a heat generating part by resistance heating, and is arranged above a graphite heater arranged so as to surround a crucible accommodating silicon melt used when a single crystal is manufactured by the Czochralsky method. The heat generating part is of a ring shape and arranged so as to surround the crucible; and from the inner side and outer side of the heat generating part, slits are horizontally formed, respectively. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地控制单晶的晶体缺陷的单晶制造用上加热器。并且通过使用用于制造单晶的上加热器，有效地控制晶体缺陷以及提高氧浓度的可控性来提供用于制造高质量单晶的装置和方法。解决方案：上加热器至少设置有用于通过电阻加热供应电流和发热部分的电极，并且布置在石墨加热器上方，该石墨加热器布置成围绕容纳用于单晶的硅熔体的坩埚由Czochralsky法制造。发热部为环状，配置成包围坩埚，并且从发热部的内侧和外侧分别水平地形成狭缝。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009161416A Single crystal manufacturing unit 有权
标题翻译：单晶制造单元
公开(公告)号：JP2009161416A
公开(公告)日：2009-07-23
申请号：JP2008003164
申请日：2008-01-10
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： HOSHI RYOJI , TAKANO KIYOTAKA
IPC分类号： C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/14 , C30B15/20 , C30B35/00 , Y10T117/1068
摘要： PROBLEM TO BE SOLVED: To provide a single crystal manufacturing unit capable of speeding-up the growing speed of a single crystal by efficiently cooling the single crystal during its breeding. SOLUTION: In a single crystal manufacturing unit 1 for breeding a single crystal 4 by Czochralski method, at least having a main chamber 2 which stores a crucible 6 to contain material melt solution 5 and a heater 8 to heat the material melt solution 5, a draw-up chamber 3 which is provided over the main chamber 2 and in which a grown single crystal 4 is drawn-up and stored, and a cooling cylinder 12 which is extended at least from the ceiling part of the main chamber 2 to the surface of the material melt solution 5 surrounding the single crystal 4 during draw-up, and forced-cooled by a cooling medium, wherein this unit has at least an auxiliary cooling cylinder 19 which is set inside the cooling cylinder 12, and the auxiliary cooling cylinder 19 has a slit penetrating in its axial direction and extends to the surface of the material melt solution 5. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种单晶制造单元，其能够通过在其育种期间有效地冷却单晶来加速单晶的生长速度。解决方案：在用于通过切克劳斯基法（Czochralski）方法培养单晶4的单晶制造单元1中，至少具有存储坩埚6以容纳材料熔体溶液5的主室2和用于加热材料熔融溶液的加热器8 如图5所示，设置在主室2上并且其中生长的单晶4被抽出和储存的抽屉室3和至少从主室2的顶部延伸的冷却缸12 在上拉期间向单晶4周围的材料熔融溶液5的表面施加强制冷却，其中该单元至少具有设置在冷却缸12内的辅助冷却缸19，辅助冷却缸19具有沿其轴向穿透的狭缝并延伸到材料熔体溶液5的表面。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2004342858A Soi wafer and manufacturing method therefor 有权
公开(公告)号：JP2004342858A
公开(公告)日：2004-12-02
申请号：JP2003137939
申请日：2003-05-15
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： TAKANO KIYOTAKA , TSUNODA HITOSHI
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762
CPC分类号： H01L21/76251 , Y10S65/08 , Y10T117/10
摘要： PROBLEM TO BE SOLVED: To provide an SOI (silicon on insulator) wafer which has high film thickness uniformity and sufficient micro roughness and which is suitable for manufacturing a high speed device, and to provide a manufacturing method of the wafer. SOLUTION: In the manufacturing method of SOI wafer, an SOI wafer which has at least SOI layer and is characterised in that an off-angle in orientation of the SOI layer is in only direction from ä110}, and an off-angle is not more than 2° for 5' or more; and an SOI wafer in which, the SOI layer is formed by bonding at least a base wafer and a bond wafer formed of silicon single crystal and thinning the bond wafer, and as the bonding wafer, a bonding wafer of which orientation is off-angled only in the direction from ä110}, and the off angle is not more than 2° for 5' or more, is used; are manufactured. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2010275137A Method for producing silicon single crystal 审中-公开
标题翻译：生产硅单晶的方法
公开(公告)号：JP2010275137A
公开(公告)日：2010-12-09
申请号：JP2009127754
申请日：2009-05-27
申请人： Shin Etsu Handotai Co Ltd , 信越半導体株式会社
发明人： KIMURA AKIHIRO , TAKANO KIYOTAKA
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method of production which can efficiently produce, by the Czochralski method (CZ method), a silicon single crystal of a large diameter with a heavy weight by suppressing later occurrence of slip in an enlarged diameter after forming the enlarged diameter during the growth of the body part of the silicon single crystal.
SOLUTION: In the method for producing a silicon single crystal, at least by the Czochralski method, a seed crystal is made to contact with a material melt to form an enlarged diameter part, and successively the body part is made to grow to form the silicon single crystal. The silicon single crystal is produced by setting the interstitial oxygen concentration in the area of the enlarged diameter, which includes the position of stress concentration where the concentration of stress becomes maximum during the growth of the body part, to 3.0×10
17 atoms/cm
3 (ASTM'79) or higher.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以通过切克劳斯基法（CZ法）有效地生产具有重量大的大直径硅单晶的生产方法，通过抑制稍后发生的扩大直径的滑动在硅单体的主体部分的生长期间形成扩大的直径之后。解决方案：在用于制造硅单晶的方法中，至少通过切克劳斯基法，将晶种与材料熔体接触以形成扩大的直径部分，然后使主体部分生长成形成硅单晶。通过将包括身体部位生长过程中应力集中的应力集中的应力集中位置的扩大直径区域的间隙氧浓度设定为3.0×10

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