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1. 发明专利

JP2004252405A Silicon containing resist material and pattern forming method 审中-公开
公开(公告)号：JP2004252405A
公开(公告)日：2004-09-09
申请号：JP2003194035
申请日：2003-07-09
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , KANOU TAKESHI , WATANABE TAKESHI , TAKEDA TAKANOBU , WATANABE OSAMU
IPC分类号： G03F7/075 , C08F222/10 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To make the material sensitive to a high energy ray and to improve the sensitivity and resolution at a wavelength of ≤300 nm and resistance to oxygen plasma etching. SOLUTION: The silicon containing resist material contains a high molecular compound containing a repeating unit represented by formula (1), wherein R 1 is H, a 1-10C linear, branched or cyclic alkyl, an acid-labile group or an adhesive group; R 2 -R 4 are the same or different and each a 1-10C linear, branched or cyclic alkyl or haloalkyl, or a 6-20C aryl; and m is a positive number. A fine pattern perpendicular to a substrate can easily be formed and a superior effect as a fine pattern forming material for manufacture of VSLI is shown. COPYRIGHT: (C)2004,JPO&NCIPI

2. 发明专利

JP2004115630A Polymer compound, positive-type resist material and pattern forming method using the same 有权
公开(公告)号：JP2004115630A
公开(公告)日：2004-04-15
申请号：JP2002279854
申请日：2002-09-25
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , KUSAKI WATARU , TAKEDA TAKANOBU , WATANABE OSAMU
IPC分类号： G03F7/039 , C08F212/14 , C08F232/08 , C08F234/02 , C08F234/04 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive-type resist material, particularly a chemically-amplified, positive-type resist material, having a high resolution, margin of exposure, a small difference between sparse and dense dimensions, and process adaptability, surpassing those of conventional positive-type resist materials, furnishing a good pattern shape on exposure, and showing excellent etching resistance. SOLUTION: A polymer compound having at least a repeating unit for copolymerization represented by general formula (1), and having a weight-average molecular weight of 1,000-500,000 is formulated as a base resin into the positive-type resist material. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2008276045A Method for preparing chemically amplified resist composition 有权
标题翻译：制备化学稳定组分的方法
公开(公告)号：JP2008276045A
公开(公告)日：2008-11-13
申请号：JP2007121545
申请日：2007-05-02
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： MASUNAGA KEIICHI , TAKEDA TAKANOBU , WATANABE TAMOTSU , WATANABE SATOSHI , KOITABASHI RYUJI , WATANABE OSAMU
IPC分类号： G03F7/039 , G03F7/038 , G03F7/26 , H01L21/027
CPC分类号： G03F7/0048 , G03F7/0382 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a method for preparing a resist composition by which the stabilization of the resolution of a resist film obtained from a prepared resist composition is enabled, and to provide a resist composition which ensures a small difference in time degradation between lots by the method.
SOLUTION: The method for preparing a chemically amplified resist composition comprising a binder, an acid generator, a nitrogen-containing basic substance and a solvent includes: a process of selecting a solvent of which the peroxide content is below an allowable value as the above solvent; and a process of mixing materials constituting the resist composition in the selected solvent.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制备抗蚀剂组合物的方法，通过该方法可以使由制备的抗蚀剂组合物获得的抗蚀剂膜的分辨率稳定化，并提供确保时间差小的抗蚀剂组合物通过方法降解批次。解决方案：制备包含粘合剂，酸产生剂，含氮碱性物质和溶剂的化学增幅抗蚀剂组合物的方法包括：选择过氧化物含量低于允许值的溶剂的方法为上述溶剂; 以及将构成抗蚀剂组合物的材料混合在所选择的溶剂中的方法。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2006293380A Chemical amplification type resist material 有权
标题翻译：化学放大型耐药材料
公开(公告)号：JP2006293380A
公开(公告)日：2006-10-26
申请号：JP2006132581
申请日：2006-05-11
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： TAKEDA TAKANOBU , WATANABE OSAMU , WATANABE ATSUSHI , HATAKEYAMA JUN , NISHI TSUNEHIRO , KANOU TAKESHI
IPC分类号： G03F7/039 , C08F222/06 , C08F232/00 , G03F7/033 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a chemical amplification type resist material which ensures a high resolution, good resist pattern profile and improved storage stability.
SOLUTION: A polymer using an ester of (meth)acrylic acid, bicycloheptenecarboxylic acid or bicycloheptenedicarboxylic acid having an acid decomposable group as raw material, and having a narrow molecular weight dispersity because a low-molecular-weight component has been removed is used in the chemical amplification type resist material.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供确保高分辨率，良好的抗蚀剂图案轮廓和改善的储存稳定性的化学放大型抗蚀剂材料。解决方案：使用具有酸可分解基团的（甲基）丙烯酸，双环庚烯羧酸或双环庚二烯酸的酯作为原料，由于除去低分子量成分而具有窄分子量分散性的聚合物是用于化学放大型抗蚀剂材料。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005042085A Polymer compound, resist material and pattern forming method 有权
标题翻译：聚合物，耐腐蚀材料和图案形成方法
公开(公告)号：JP2005042085A
公开(公告)日：2005-02-17
申请号：JP2004014354
申请日：2004-01-22
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , TAKEDA TAKANOBU , WATANABE OSAMU
IPC分类号： C08F230/08 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号： G03F7/0758 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a polymer compound that has high sensitivity and high resolution due to its high dissolution contrast, shows no swelling at the image development, shows only a slight line edge roughness, generates no residues or the like, even when it has a high silicon content, and can be favorably used as a material for the two-layer resist method that is particularly suitable for forming patterns with a large aspect ratio, and to provide a chemically enhanced positive type resist material, and a method for forming patterns. SOLUTION: This polymer compound comprises a repeating unit having silicone, and a repeating unit having a substituent group represented by general formula (1) (wherein A 1 is a divalent group selected from the group consisting of furandiyl, tetrahydrofurandiyl, and oxanorbornanediyl; R 1 and R 2 are, independently from each other, a 1-10C, monovalent, straight-chain or branched or cyclic hydrocarbon group or they may be bound together to form an aliphatic hydrocarbon ring including carbon atoms for the binding; and R 3 is a hydrogen atom, or a 1-10C, monovalent, straight-chain or branched or cyclic hydrocarbon group that may contain a hetero atom). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供由于其高溶解度对比度而具有高灵敏度和高分辨率的高分子化合物，在图像显影时不显示溶胀，仅显示轻微的线边缘粗糙度，不产生残余物等，即使具有高硅含量，并且可以有利地用作特别适用于形成具有大纵横比的图案的双层抗蚀剂方法的材料，并且提供化学增强的正型抗蚀剂材料，以及形成图案的方法解决方案：该高分子化合物包含具有硅氧烷的重复单元和具有由通式（1）表示的取代基的重复单元（其中A 1 是选自以下的二价基团：呋喃二基，四氢呋喃二基和草甘膦二基; R 1和R 2彼此独立地为1-10C，一价，直链或支链或环状烃基或者它们可以结合在一起以形成包含用于结合的碳原子的脂肪族烃环; R 3是氢原子或1-10C，一价，直链或支链或环状烃可以含有杂原子的基团）。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2003084440A Resist material and pattern forming method 有权
标题翻译：耐材料和图案形成方法
公开(公告)号：JP2003084440A
公开(公告)日：2003-03-19
申请号：JP2002022638
申请日：2002-01-31
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , TAKEDA TAKANOBU , WATANABE OSAMU , HASEGAWA KOJI
IPC分类号： G03F7/039 , C08F212/04 , C08F220/10 , C08F220/42 , C08F222/10 , C08F232/08 , C08F234/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist material such as a chemical amplification type resist material having very high contrast between velocity of dissolution in alkali before exposure and that after exposure, high sensitivity, high resolution and particularly excellent etching resistance and suitable for use as a fine pattern forming material particularly for production of VLSI (very large scale integrated circuit). SOLUTION: The resist material comprises a high molecular compound having a weight average molecular weight of 1,000-500,000 and containing repeating units of formula (1) and repeating units having an acid-labile group. In the formula, R is H, hydroxy, a 1-4C linear or branched alkyl, a 1-20C substitutable alkoxy or halogen; (m) is 0 or a positive integer of 1-4; X is O, S or -NR-, wherein R is H, a 1-4C linear or branched alkyl or hydroxy; and (p) is a positive number.
摘要翻译：要解决的问题：为了提供抗蚀剂材料，例如化学放大型抗蚀剂材料，其具有在曝光之前碱中的溶解速度与曝光后的非常高的对比度，高灵敏度，高分辨率和特别优异的耐蚀刻性，并且适合用作特别是用于生产VLSI（超大规模集成电路）的精细图案形成材料。解决方案：抗蚀剂材料包含重均分子量为1,000-500,000并含有式（1）的重复单元和具有酸不稳定基团的重复单元的高分子化合物。在该式中，R 1是H，羟基，1-4C直链或支链烷基，1-20C可取代的烷氧基或卤素; （m）为0或1-4的正整数; X是O，S或-NR-，其中R是H，1-4C直链或支链烷基或羟基; 和（p）是正数。

7. 发明专利

JP2008249762A Chemically amplified negative resist composition and patterning process 有权
标题翻译：化学放大抗负荷组合物和模式过程
公开(公告)号：JP2008249762A
公开(公告)日：2008-10-16
申请号：JP2007087243
申请日：2007-03-29
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： TAKEDA TAKANOBU , WATANABE TAMOTSU , KOITABASHI RYUJI , MASUNAGA KEIICHI , WATANABE OSAMU , TANAKA HARUYORI
IPC分类号： G03F7/038 , C08F12/02 , C08F210/14 , C08F232/08 , H01L21/027
CPC分类号： G03F7/0382 , G03F7/20
摘要： PROBLEM TO BE SOLVED: To provide a chemically amplified negative resist composition less liable to cause bridges and having small substrate dependency of a pattern thereof, and to provide a patterning process using the same. SOLUTION: The chemically amplified negative resist composition comprises a polymer comprising recurring units represented by general formula (4) (wherein R 1 and R 2 each independently represent a hydrogen atom or a methyl group; X represents an electron withdrawing group; m is 0 or an integer of 1-4; and n is an integer of 1-5) and having a weight average molecular weight of 1,000-50,000. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种化学放大的负性抗蚀剂组合物，其不太容易引起桥梁，并且其图案的基板依赖性小，并且提供使用其的图案化工艺。解决方案：化学放大型负性抗蚀剂组合物包含含有由通式（4）表示的重复单元的聚合物（其中R 1和R 2各自独立地表示氢原子或甲基; X表示吸电子基团; m为0或1-4的整数，n为1-5的整数），重均分子量为1,000〜5,000。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008102383A Resist material and pattern forming method 有权
标题翻译：耐材料和图案形成方法
公开(公告)号：JP2008102383A
公开(公告)日：2008-05-01
申请号：JP2006285753
申请日：2006-10-20
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： TAKEDA TAKANOBU , WATANABE OSAMU , WATANABE SATOSHI , OSAWA YOICHI , KOITABASHI RYUJI , WATANABE TAMOTSU
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0392
摘要： PROBLEM TO BE SOLVED: To provide a resist material, such as a chemically amplified positive resist material which provides a proper pattern profile as well as high resolution in photolithography for microfabrication, particularly lithography that uses KrF laser, ArF laser, F
2 laser, ultrashort ultraviolet radiation, electron beam or X-ray as an exposure light source, and to provide a pattern forming method that uses the material.
SOLUTION: The resist material contains one or more compounds, having an amine oxide structure as a basic component.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供抗蚀剂材料，例如化学放大正性抗蚀剂材料，其提供适当的图案轮廓以及用于微细加工的光刻中的高分辨率，特别是使用KrF激光，ArF激光， SB> 2 激光，超短紫外线辐射，电子束或X射线作为曝光光源，并提供使用该材料的图案形成方法。抗蚀剂材料含有一种或多种具有氧化胺结构作为基本组分的化合物。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2004149756A Polymer compound, positive resist material, and method for forming pattern using the material 有权
标题翻译：聚合物化合物，正极材料和使用材料形成图案的方法
公开(公告)号：JP2004149756A
公开(公告)日：2004-05-27
申请号：JP2003061069
申请日：2003-03-07
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , KANOU TAKESHI , HASEGAWA KOJI , WATANABE TAKESHI , WATANABE OSAMU , TAKEDA TAKANOBU
IPC分类号： G03F7/039 , C08F232/08 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a positive resist material, especially a chemically amplified positive resist material, having a high sensitivity, a high resolution, an exposure latitude, process adaptability which are superior to those of a conventional positive resist material, gives good-shaped pattern after exposure, and is small in, especially, line edge roughness, and is excellent in etching resistance. SOLUTION: The polymer compound consists essentially of repeating units represented by formula (1) or formula (2) and has a weight-average molecular weight in the range of 1,000 to 500,000. The positive resist material contains the polymer compound as a base resin. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2004124082A Ester compound and method for manufacturing it and polymer compound 有权
公开(公告)号：JP2004124082A
公开(公告)日：2004-04-22
申请号：JP2003208773
申请日：2003-08-26
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KANOU TAKESHI , NISHI TSUNEHIRO , KURIHARA HIDESHI , HASEGAWA KOJI , WATANABE TAKESHI , WATANABE OSAMU , NAKAJIMA MUTSUO , TAKEDA TAKANOBU , HATAKEYAMA JUN
IPC分类号： G03F7/039 , C07C67/14 , C07C69/533 , C07C69/54 , C07C69/593 , C07C69/60 , C08F20/12
摘要： PROBLEM TO BE SOLVED: To provide (1) an ester compound for producing a polymer compound with excellent acidic decomposing properties and a method for manufacturing it, and (2) the polymer compound exhibiting far superior sensitivity, resolving power and etching resistance to those of conventional polymers when it is compounded in a resist material as a base resin. SOLUTION: The ester compounds are exo-type ester compounds of general formula (1) wherein R 1 represents H atom, CH 3 or CH 2 CO 2 R 14 group; R 2 represents H atom, CH 3 or CO 2 R 14 group; R 3 represents an alkyl or an aryl group; R 4 to R 13 represent H or an optionally hetero atom-containing univalent hydrocarbon group, and R 4 and R 5 , R 6 and R 8 , and R 7 and R 9 may respectively form a ring and R 6 and R 8 bond by directly binding with neighboring carbon atoms or may form a double bond; R 14 represents an alkyl group; and the formula may represents enantiomers. The resist material using the polymer compound obtained from the ester compound as the base resin is useful for micro-fabrication with electronic beam or far ultraviolet rays and can be easily molded into a vertical pattern to a base. COPYRIGHT: (C)2004,JPO

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