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1. 发明专利

JP2007056270A Polymer compound, resist material and patterning method 有权
标题翻译：聚合物，耐腐蚀材料和图案方法
公开(公告)号：JP2007056270A
公开(公告)日：2007-03-08
申请号：JP2006247791
申请日：2006-09-13
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： WATANABE TAKESHI , KANOU TAKESHI , HASEGAWA KOJI , NISHI TSUNEHIRO , NAKAJIMA MUTSUO , TACHIBANA SEIICHIRO , HATAKEYAMA JUN
IPC分类号： C08F32/08 , C08G61/08 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide (1) a new acetal compound useful as a monomer for the production of a photoresist material having excellent adhesiveness and transparency in a photo-lithography to use light of ≤300 nm wavelength, especially KrF or ArF excimer laser light as a light source, (2) a polymer compound having excellent reactivity, rigidity and substrate adhesiveness, (3) a resist material produced by using the polymer compound as a base resin and having good resolution and etching resistance considerably superior to those of conventional material, and (4) a patterning method to use the resist material. SOLUTION: The polymer compound has a weight-average molecular weight of 1,000-500,000 and comprises a repeating unit expressed by general formula (4-1) or (4-2). The resist material produced by using the polymer compound as a base resin is useful for a microfabrication with electron beam or far-ultraviolet ray. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供（1）可用作制备光刻胶材料的光致抗蚀剂材料的单体的新型缩醛化合物，其在光刻中具有优异的粘合性和透明度，以使用≤300nm波长的光，特别是KrF或 ArF准分子激光作为光源，（2）具有优异的反应性，刚性和基材粘合性的高分子化合物，（3）通过使用高分子化合物作为基础树脂并且具有优异的分辨率和耐蚀刻性而制造的抗蚀剂材料显着优于常规材料的那些，以及（4）使用抗蚀剂材料的图案化方法。高分子化合物的重均分子量为1,000〜500,000，包含由通式（4-1）或（4-2）表示的重复单元。通过使用高分子化合物作为基础树脂制造的抗蚀剂材料可用于用电子束或远紫外线的微细加工。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2004331853A Polymer compound, positive resist material and pattern-forming method using the same material 有权
公开(公告)号：JP2004331853A
公开(公告)日：2004-11-25
申请号：JP2003131075
申请日：2003-05-09
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , NAKAJIMA MUTSUO
IPC分类号： G03F7/039 , C08G77/04 , G03F7/075 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist material having a remarkably high contrast of rate of alkali dissolution between before and after exposure, having high resolution and high sensitivity, having small line edge roughness and exhibiting excellent etching resistance by using a polysilsesquioxane in which a hydroxyindane substituted with an acid-unstable group is pendent as a base resin and formulating the polysilsesquioxane with a positive resist material and a polymer compound useful as the base resin for the positive resist material. SOLUTION: The polymer compound has a recurring unit represented by general formula (1) (R 1 is a hydrogen atom, a 1-4C alkyl group, an acetyl group or an acid-unstable group; m is an integer of 0-4; W 1 and W 2 are each a hydrogen atom, a hydroxy group or an acetoxy group or W 1 and W 2 bond together to connect a methylene group, an ethylene group or -O-; 1≤x≤1.5) and improves solubility by an acid. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004124082A Ester compound and method for manufacturing it and polymer compound 有权
公开(公告)号：JP2004124082A
公开(公告)日：2004-04-22
申请号：JP2003208773
申请日：2003-08-26
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KANOU TAKESHI , NISHI TSUNEHIRO , KURIHARA HIDESHI , HASEGAWA KOJI , WATANABE TAKESHI , WATANABE OSAMU , NAKAJIMA MUTSUO , TAKEDA TAKANOBU , HATAKEYAMA JUN
IPC分类号： G03F7/039 , C07C67/14 , C07C69/533 , C07C69/54 , C07C69/593 , C07C69/60 , C08F20/12
摘要： PROBLEM TO BE SOLVED: To provide (1) an ester compound for producing a polymer compound with excellent acidic decomposing properties and a method for manufacturing it, and (2) the polymer compound exhibiting far superior sensitivity, resolving power and etching resistance to those of conventional polymers when it is compounded in a resist material as a base resin. SOLUTION: The ester compounds are exo-type ester compounds of general formula (1) wherein R 1 represents H atom, CH 3 or CH 2 CO 2 R 14 group; R 2 represents H atom, CH 3 or CO 2 R 14 group; R 3 represents an alkyl or an aryl group; R 4 to R 13 represent H or an optionally hetero atom-containing univalent hydrocarbon group, and R 4 and R 5 , R 6 and R 8 , and R 7 and R 9 may respectively form a ring and R 6 and R 8 bond by directly binding with neighboring carbon atoms or may form a double bond; R 14 represents an alkyl group; and the formula may represents enantiomers. The resist material using the polymer compound obtained from the ester compound as the base resin is useful for micro-fabrication with electronic beam or far ultraviolet rays and can be easily molded into a vertical pattern to a base. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2006307180A Silsesquioxane-based compound mixture, method for producing the same mixture and resist composition and patterning method each using the same mixture 有权
标题翻译：基于SILESESQUIOXANE的化合物混合物，使用相同混合物制备相同混合物和抗蚀剂组合物的方法和方法
公开(公告)号：JP2006307180A
公开(公告)日：2006-11-09
申请号：JP2006084411
申请日：2006-03-27
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HAMADA YOSHITAKA , NAKAJIMA MUTSUO , NODA KAZUMI , TAKEMURA KATSUYA
IPC分类号： C08G77/06 , G03F7/004 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号： G03F7/0757 , C08G77/045 , G03F7/0045 , H01L21/3122
摘要： PROBLEM TO BE SOLVED: To readily and surely obtain a silsesquioxane compound mixture being a material suitable for a positive resist composition and having a high proportion of silsesquioxane compounds bearing bulky substituent groups on the side chain and having a degree of condensation of substantially 100%. SOLUTION: The method for producing the silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on the side chain and having a degree of condensation of substantially 100% comprises hydrolyzing a silane raw material containing a trifunctional silane bearing a bulky substituent group on the side chain represented by general formula (1): X 1 X 2 X 3 Si-Y (wherein Y is an aliphatic or aromatic organic group optionally having a functional group or an organic group containing an aromatic structure which may have a functional group; X 1 , X 2 and X 3 are each H, a halogen atom, an alkoxy group or an aryloxy group) in the presence of an acid or base catalyst in a first stage and then carrying out dehydrating condensation of the hydrolyzed silane raw material in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system in a second stage. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：为了容易且可靠地获得作为适合于正性抗蚀剂组合物的材料并且在侧链上具有大比例的带有大体积取代基的倍半硅氧烷化合物并具有大体上的缩合程度的硅倍半氧烷化合物混合物 100％。解决方案：制备在侧链上具有大体积取代基的倍半硅氧烷化合物比例高且缩合度基本上为100％的倍半硅氧烷化合物混合物的方法包括水解含有三官能硅烷的硅烷原料，其具有由通式（1）表示的侧链上的大体取代基：X 1 X 3 Si-Y（其中Y是任选具有官能团的脂族或芳族有机基团或含有可具有官能团的芳族结构的有机基团; X 1，X 2，X 3 在酸或碱催化剂的存在下，在第一阶段中，然后在水解的硅烷原料的存在下进行脱水缩合，其中每个为H，卤素原子，烷氧基或芳氧基; 强碱催化剂，同时从第二次反应体系中冷凝出来的水 d阶段版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006085129A Resist composition and patterning process using same 有权
标题翻译：使用相同的耐腐蚀组合物和图案处理方法
公开(公告)号：JP2006085129A
公开(公告)日：2006-03-30
申请号：JP2005038701
申请日：2005-02-16
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： NAKAJIMA MUTSUO , HAMADA YOSHITAKA , TAKEMURA KATSUYA , NODA KAZUMI , FUJII TOSHIHIKO
IPC分类号： G03F7/075 , G03F7/039 , G03F7/26 , H01L21/027
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/108
摘要： PROBLEM TO BE SOLVED: To provide a bilayer resist composition containing a silicone resin, the composition which makes formation of a fine pattern possible by suppressing a pattern from collapsing by swelling as much as possible and which shows excellent etching durability under etching conditions on transferring a pattern onto an organic film, and to provide a patterning process using the resist composition. SOLUTION: The resist composition comprises a silicone resin obtained through cohydrolytic condensation of a hydrolyzable silane monomer mixture of formula (1):R 1 R 2 p SiX 3-p , formula (2):R 3 R 4 q SiX 3-q and formula (3):R 5 R 6 r SiX 3-r , an acid generator, a nitrogen-containing organic compound and a solvent. In the formulae, R 1 represents an organic group having a hydroxyl group and three or more fluorine atoms, in total, on a carbon atom bonded to the hydroxyl-bonded carbon atom; R 3 represents an organic group having a carboxyl group protected with an acid labile protective group; R 5 represents a lactone ring-bearing organic group; each of R 2 , R 4 , R 6 represents a hydrocarbon group; X represents a hydrolyzable group; p is 0 or 1; q is 0 or 1; and r is 0 or 1. The resist composition shows preferable resolution, overcomes a problem that a selective etching ratio can not be obtained with respect to an underlay film as an organic material in oxygen reactive etching, and is suitable for a bilayer resist process in ArF exposure. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题的方案为了提供一种含有有机硅树脂的双层抗蚀剂组合物，该组合物可以通过尽可能地抑制图案的膨胀而使形成微细图案成为可能，并且在蚀刻条件下表现出优异的蚀刻耐久性在将图案转印到有机膜上，并提供使用该抗蚀剂组合物的图案化工艺。解决方案：抗蚀剂组合物包含通过式（1）的可水解硅烷单体混合物的共水解缩合获得的硅氧烷树脂：R 1 SP＆lt; SP＆gt; 2＆lt; SP＆gt; 式（2）：R 3 SiX 3-p > 3-q 和式（3）：R 5 6 酸产生剂，含氮有机化合物和溶剂。在该式中，R 1 表示在与羟基键合的碳原子键合的碳原子上具有羟基和三个或更多个氟原子的有机基团; R 3表示具有被酸不稳定保护基保护的羧基的有机基团; R 5 表示含内酯环的有机基团; R 2 ，R 4 中的每一个代表烃基; X表示水解性基团; p为0或1; q为0或1; 并且r为0或1.抗蚀剂组合物显示出优选的分辨率，克服了在氧反应蚀刻中作为有机材料的底膜不能获得选择性蚀刻比的问题，并且适用于双层抗蚀剂工艺 ArF曝光版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2004062175A Resist material and method for forming pattern 有权
标题翻译：用于形成图案的材料和方法
公开(公告)号：JP2004062175A
公开(公告)日：2004-02-26
申请号：JP2003168885
申请日：2003-06-13
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KANOU TAKESHI , NISHI TSUNEHIRO , KURIHARA HIDESHI , HASEGAWA KOJI , WATANABE TAKESHI , WATANABE OSAMU , NAKAJIMA MUTSUO , TAKEDA TAKANOBU , HATAKEYAMA JUN
IPC分类号： G03F7/039 , C08F212/04 , C08F220/18 , C08F222/06 , C08F232/08 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide (1) a resist material containing a polymer compound as a base resin which contains an ester compound giving a polymer compound with excellent acid decomposing property as a structural unit and which realizes the sensitivity, resolution and etching durability much exceeding a conventional resist product when the above polymer compound is compounded as a base resin into a resist material, and to provide (2) a method for forming a pattern by using the above resist material. SOLUTION: The polymer compound contains an ester compound expressed by general formula (1a) as a structural unit and has 1,000 to 500,000 weight average molecular weight. In formula (1a), R 1 represents a hydrogen atom, a methyl group or CH 2 CO 2 R 14 , R 2 represents a hydrogen atom, a methyl group or CO 2 R 14 , R 3 represents a 1-8C alkyl group or a 6-20C aryl group which may be substituted, each of R 4 to R 13 represents a hydrogen atom or a 1-15C monovalent hydrocarbon group which may have a hetero atom or which may form a ring with others, or R 4 to R 13 may be coupled to form a double bond, and R 14 represents a 1-15C alkyl group or its enantiomer. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供（1）含有高分子化合物作为基础树脂的抗蚀材料，其含有具有优异的酸分解性的聚合物化合物的酯化合物作为结构单元，并且实现了灵敏度，分辨率和当将上述高分子化合物作为基础树脂配合到抗蚀剂材料中时，蚀刻耐久性远远超过常规抗蚀剂产品，并且提供（2）通过使用上述抗蚀剂材料形成图案的方法。解决方案：聚合物化合物含有由通式（1a）表示的酯化合物作为结构单元，并具有1,000至500,000重均分子量。在式（1a）中，R SP 1表示氢原子，甲基或CH 2 S 14 >，R 2 SP 2表示氢原子，甲基或CO 2，R SP 3，R SP 3， 1-8C烷基或可以被取代的6-20个C的芳基，R 4和R 13中的每一个代表氢原子或1-15C一价烃基其可以具有杂原子或可以与其它基团形成环，或者可以将R 14与R 13连接形成双键，并且R 14 表示1-15C烷基或其对映异构体。版权所有（C）2004，JPO

7. 发明专利

JP2009126940A Composition for forming metal oxide-containing film, metal oxide-containing film, substrate having metal oxide-containing film formed thereon, and pattern formation method using the same 有权
标题翻译：用于形成含金属氧化物膜，含氧化金属膜，其形成含金属氧化物膜的基材和使用其的图案形成方法的组合物
公开(公告)号：JP2009126940A
公开(公告)日：2009-06-11
申请号：JP2007303130
申请日：2007-11-22
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： OGIWARA TSUTOMU , UEDA TAKASHI , YANO TOSHIHARU , NAKAJIMA MUTSUO
IPC分类号： C08L85/00 , C08G79/00 , C08K5/09 , G03F7/11 , G03F7/26 , H01L21/027 , H01L21/3065
CPC分类号： G03F7/11 , C08G77/56 , C09D183/14 , G03F7/0752 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a composition for forming a metal oxide-containing film that forms a good pattern by using a metal oxide-containing intermediate film formed of the composition. SOLUTION: The composition for forming a thermosetting metal oxide-containing film comprises (A) a metal oxide-containing compound obtained by hydrolytic condensation of a compound of formula (1) and a compound of formula (2), (B) a compound of formula (3) or (4), (C) an organic acid, and (D) an organic solvent. R 1 m1 R 2 m2 R 3 m3 Si(OR) (4-m1-m2-m3) (1). In the formula, R is an alkyl group; R 1 -R 3 are each H or a monovalent organic group; m1-m3 are each 0 or 1; and m1+m2+m3 is 0-3. U(OR 4 ) m4 (OR 5 ) m5 (2). In the formula, R 4 and R 5 are each an organic group; m4 and m5 are each an integer of at least 0; and U is a group III-V element of the periodic table. L a H b X (3). In the formula, L is Li, Na, K, Rb or Cs; X is a hydroxy group or an organic acid group; a is an integer of at least 1; b is 0 or an integer of at least 1; and a+b is a valence number of the hydroxy group or the organic acid group. M a H b A (4). In the formula, M is sulfonium, iodonium or ammonium; A is X or a non-nucleophilic counterion; a is an integer of at least 1; and b is 0 or an integer of at least 1. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种通过使用由该组合物形成的含金属氧化物的中间膜形成具有良好图案的含金属氧化物膜的组合物。解决方案：用于形成含热固性金属氧化物的膜的组合物包含（A）通过式（1）的化合物和式（2），（B）的化合物的水解缩合获得的含金属氧化物的化合物，式（3）或（4）的化合物，（C）有机酸和（D）有机溶剂。 R 1 m1 R 2 m2 R 3 m3 1 -R 3 分别为H或一价有机基团; m1-m3分别为0或1; m1 + m2 + m3为0-3。（2）。（2）。（2）。（2）。在该式中，R“SP”4 和R 5 各自为有机基团; m4和m5各自为至少为0的整数; U是周期表的III-V族元素。（3）。在该式中，L为Li，Na，K，Rb或Cs; X是羟基或有机酸基; a是至少为1的整数; b为0或至少为1的整数; a + b是羟基或有机酸基的价数。（4）。在该配方中，M是锍，碘或铵; A是X或非亲核抗衡离子; a是至少为1的整数; 并且b为0或至少为1的整数。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008081646A Silsesquioxane-based compound mixture, hydrolyzable silane compound, method for producing the same and resist composition using the same and patterning method, and processing method of substrate 有权
标题翻译：基于SILESESQUIOXANE的复合混合物，可水解的硅烷化合物，其制备方法和使用它们的组合物和方法，以及基材的处理方法
公开(公告)号：JP2008081646A
公开(公告)日：2008-04-10
申请号：JP2006264623
申请日：2006-09-28
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： NAKAJIMA MUTSUO , HAMADA YOSHITAKA , TAKEMURA KATSUYA , NODA KAZUMI
IPC分类号： C08G77/18 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号： G03F7/0757 , C08G77/045 , C08G77/06 , G03F7/0397 , Y10S430/106
摘要： PROBLEM TO BE SOLVED: To provide silsesquioxane-based compounds or a mixture of them having a degree of condensation of substantially 100%, suitable for chemically amplified positive resist composition and further provide a resist composition using the above silsesquioxane-based compound having a high resolution and a high reproducibility of repeating fine patterns as compared to a conventional resist composition. SOLUTION: The invention relates to the mixture of the silsesquioxane-based compound comprising the silsesquioxane unit with a structure of norbornane skeleton in which partial methylene groups are optionally substituted with oxygen, and side chain having a directly coupled silicon atom and having the degree of condensation of substantially 100%, wherein the dimethylene chain of the norbornane skeleton on the side not coupling with the silicon are substituted with at least one substituent excluding hydrogen, and the side chain has a higher ratio of isomers having bulky substituent groups on the dimethylene chain locating at an exo position. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：提供适用于化学放大正性抗蚀剂组合物的倍半硅氧烷基化合物或其具有基本上100％的缩合度的混合物，并进一步提供使用上述倍半硅氧烷基化合物的抗蚀剂组合物，其具有与常规抗蚀剂组合物相比，重复精细图案的高分辨率和高重现性。解决方案：本发明涉及包含倍半硅氧烷单元与具有部分亚甲基任选被氧取代的降冰片烷骨架结构的倍半硅氧烷基化合物的混合物，以及具有直接键合的硅原子的侧链，缩合度基本上为100％，其中在不与硅结合的一侧上的降冰片烷骨架的二亚甲基链被除了氢以外的至少一个取代基取代，并且侧链具有较高比例的具有庞大取代基的异构体二亚甲基链位于外部位置。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007246596A Fluorine containing silicone compound, silicone resin, resist composition using the same and pattern forming method 有权
标题翻译：含氟硅酮化合物，硅氧烷树脂，使用它们的抗蚀剂组合物和图案形成方法
公开(公告)号：JP2007246596A
公开(公告)日：2007-09-27
申请号：JP2006069010
申请日：2006-03-14
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KANOU TAKESHI , NAKAJIMA MUTSUO , HASEGAWA KOJI , WATANABE TAKESHI
IPC分类号： C08G77/24 , C07F7/18 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号： G03F7/0757 , C07F7/1836 , C07F7/184 , G03F7/0045 , G03F7/0046 , Y10S430/106 , Y10S430/108
摘要： PROBLEM TO BE SOLVED: To provide a fluorine containing silicone compound and silicone resin realizing a moderate acidity enabling formation of a fine pattern by extremely suppressing pattern decomposition caused from swelling, and having a necessary and sufficient number of fluorine substitution for realizing an excellent etching resistance to the etching condition in pattern transcription to an organic film and to provide a resist composition using these fluorine containing silicone compound and the silicone resin as raw material, and to provide a pattern forming method using the resist composition. SOLUTION: The fluorine containing silicone compound is represented by general formula (1). In the formula, X 1 , X 2 , X 3 are each a hydrogen atom, a hydroxyl group, a halogen atom, a 1-6C linear, branched or cyclic alkoxyl group, 1-20C linear, branched, cyclic or polycyclic monovalent organic group. Y is a divalent organic group. R 1 , R 2 are each independently, a hydrogen atom, 1-20C linear, branched, cyclic or polycyclic monovalent organic group. R 1 , R 2 optionally form a ring by mutually bonding with carbon atoms belonging to them. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种含氟硅酮化合物和有机硅树脂，其通过极大地抑制由于溶胀引起的图案分解而实现中等酸度，从而形成精细图案，并且具有必要且足够数量的氟取代以实现对于有机膜的图案转印中的蚀刻条件的优异的耐蚀刻性，并且提供使用这些含氟硅氧烷化合物和硅树脂作为原料的抗蚀剂组合物，并提供使用该抗蚀剂组合物的图案形成方法。解决方案：含氟硅氧烷化合物由通式（1）表示。在该式中，X 1 ，X 2 ，X 3 分别为氢原子，羟基，卤素原子， 6C直链，支链或环状烷氧基，1-20C直链，支链，环状或多环一价有机基团。 Y是二价有机基团。 R 1 ，R 2 各自独立地为氢原子，1-20C直链，支链，环状或多环一价有机基团。 R 1 ，R 2 任选地通过与属于它们的碳原子相互键合形成环。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2005146131A Silicon-containing polymeric compound, resist material and method of pattern formation 有权
标题翻译：含硅聚合物，耐蚀材料及其形成方法
公开(公告)号：JP2005146131A
公开(公告)日：2005-06-09
申请号：JP2003386228
申请日：2003-11-17
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , NAKAJIMA MUTSUO
IPC分类号： G03F7/039 , C08F8/42 , C08F230/08 , C08G77/442 , G03F7/075 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist material that has high sensitivity, high resolution, small line edge roughness even when silicon content is high, generates no residue, and is well-suitable for pattern formation of a high aspect ratio. SOLUTION: This silicon-containing polymeric compound comprises a repeating unit Ua of >0 wt.% and 0 wt.% and 1 and R 3 are each independently a hydrogen atom, a methyl group, a fluorine atom, a trifluoromethyl group, a cyano group, -CH 2 C(=O)-O-R 6 or -CH 2 -O-R 5 , R 6 is a hydrogen atom, a 1-4C linear or branched alkyl group or an acid-unstable group, R 5 is a hydrogen atom, a 1-4C linear or branched alkyl group or a 1-4C linear or branched acyl group, R 2 is an acid-unstable group, X is -C(=O)-O- or -O-). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供即使硅含量高的情况下也具有高灵敏度，高分辨率，小线边缘粗糙度的抗蚀剂材料，不产生残留物，并且非常适合于高纵横比的图案形成。解决方案：该含硅聚合物包含> 0重量％和<100重量％的重复单元Ua和> 0重量％和<100重量％的重复单元Ub，均由通式（1）（其中R 1和R 3各自独立地为氢原子，甲基，氟原子，三氟甲基，氰基， C（= O）-OR 6或/或-SCH 2，其中R 1，R 2， 6 是氢原子，1-4C直链或支链烷基或酸不稳定基团，R 5是氢原子，1-4C直链或支链烷基或 1-4C直链或支链酰基R 2是酸不稳定基团，X是-C（= O）-O-或-O-）。版权所有（C）2005，JPO＆NCIPI

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