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1. 发明专利

JP2007291397A Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，耐腐蚀组合物和方法
公开(公告)号：JP2007291397A
公开(公告)日：2007-11-08
申请号：JP2007123045
申请日：2007-05-08
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , OTANI MITSUTAKA , MIYAZAWA SATORU , TSUTSUMI KENTARO , MAEDA KAZUHIKO
IPC分类号： C08F220/22 , C08F212/02 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which is sensitive to high-energy radiations, has excellent sensitivity to wavelengths of ≤200 nm, and has improved transparency and excellent plasma etching resistance. SOLUTION: The polymer has repeating units represented by formulas (1m), (1p), wherein R 1 , R 2 are each H, F, an alkyl, or a fluorinated alkyl; R 3 is F, or a linear, branched or cyclic fluorinated alkyl; R 4 is an acid-unstable group having at least 6 to 20C cyclic structure. The resist material contains the polymer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供对高能量辐射敏感的抗蚀剂组合物，对波长≤200nm具有优异的灵敏度，并且具有改善的透明度和优异的等离子体耐蚀刻性。聚合物具有由式（1m），（1p）表示的重复单元，其中R 1，R 2，R 2，各自为H，F，烷基，或氟化烷基; R 3是F或直链，支链或环状氟化烷基; R 4是具有至少6至20C环状结构的酸不稳定基团。抗蚀剂材料含有聚合物。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2004075535A New sulfonic acid ester compound 有权
公开(公告)号：JP2004075535A
公开(公告)日：2004-03-11
申请号：JP2002233366
申请日：2002-08-09
申请人： Central Glass Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , MAEDA KAZUHIKO , OTANI MITSUTAKA , KOMORIYA HARUHIKO
IPC分类号： G03F7/004 , C07C309/67 , C08F28/02 , G03F7/027
摘要： PROBLEM TO BE SOLVED: To provide a sulfonic acid ester compound which is useful as a monomer for the base polymers of resist materials suitable for fine processing technology, especially chemical amplification resist materials.
SOLUTION: This sulfonic acid ester compound represented by general formula (1a), (1b) or (1c) (R
1 is methylene, oxygen atom, or sulfur atom; R
2 is H, an acid-unstable group, or a 1 to 4C straight chain or branched oxyalkyl; R
3 is a single bond or a 1 to 3C alkylene; R
4 and R
5 are each H, F, a 1 to 4C alkyl or a fluorinated alkyl; at least one of R
4 and R
5 contains one or more fluorine atoms). The resist material using a polymer produced from the sulfonic acid ester compound as a monomer is useful for being finely processed with electron beam, far IR light, especially F
2 laser, because having excellent transparency and excellent substrate adhesiveness.
COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2004067972A Polymeric compound, resist material and method for forming pattern 有权
标题翻译：聚合物，耐腐蚀材料和形成图案的方法
公开(公告)号：JP2004067972A
公开(公告)日：2004-03-04
申请号：JP2002233045
申请日：2002-08-09
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , MAEDA KAZUHIKO , OTANI MITSUTAKA , KOMORIYA HARUHIKO
IPC分类号： G03F7/039 , C08F28/02 , C08F212/14 , C08F220/22 , C08F232/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a polymeric compound useful as a base polymer for a resist material suitable for a fine processing technology, especially a chemically amplifying resist material, a resist material, and to provide a method for forming a pattern. SOLUTION: The polymeric compound contains a recurring unit expressed by formula (1) [wherein, R 1 to R 3 are each H, F, an alkyl or a fluorinated alkyl; R 4 is a single bond, an alkylene or a fluorinated alkylene; R 5 is a single bond, O, an alkylene or a fluorinated alkylene; R 6 is methylene, O or S; R 7 to R 10 are each H, F, a fluorinated alkyl, R 11 OR 12 , R 11 COOR 12 or OR 12 ; R 11 is a single bond, an alkylene or a fluorinated alkylene; R 12 is H or an acid-labile group; and (a) is 0 or 1] and has 1,000-500,000 weight average molecular weight. The resist material is provided by having improved transparency, close adhesion and developing liquid permeability of the resist, at the same time capable of becoming a resist material having an excellent plasma etching resistance, easily forming patterns and suitable as the fine pattern-forming material for producing a super LSI (large scale integration). COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了获得可用作适用于精细加工技术的抗蚀剂材料的基础聚合物的聚合物，特别是化学放大抗蚀剂材料，抗蚀剂材料，并提供形成图案的方法。解决方案：聚合化合物含有由式（1）表示的重复单元[其中R 1至R 3各自为H，F，烷基或氟化烷基; R 4是单键，亚烷基或氟化亚烷基; R 5是单键，O，亚烷基或氟化亚烷基; R 6是亚甲基，O或S; R 7 至R 10 分别为H，F，氟化烷基，R 11， SP> 11 COOR 12 或OR 12 ; R 11是单键，亚烷基或氟化亚烷基; R 12 是H或酸不稳定基团; 和（a）为0或1]，并且具有1,000-500,000重均分子量。抗蚀剂材料通过具有改进的抗蚀剂的透明性，紧密的粘附性和显影液渗透性而提供，同时能够成为具有优异的等离子体耐蚀刻性的抗蚀剂材料，容易形成图案并适合作为精细图案形成材料生产超大型LSI（大规模集成）。版权所有（C）2004，JPO

4. 发明专利

JP2003002925A High molecular weight compound, resisit material and method for forming pattern 有权
标题翻译：高分子量化合物，电阻材料和形成图案的方法
公开(公告)号：JP2003002925A
公开(公告)日：2003-01-08
申请号：JP2001190647
申请日：2001-06-25
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , OTANI MITSUTAKA , MIYAZAWA SATORU , TSUTSUMI KENTARO , MAEDA KAZUHIKO
IPC分类号： G03F7/032 , C08F212/14 , C08F220/04 , C08F220/22 , G03F7/004 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0046 , C08F212/14 , G03F7/0392 , Y10S430/108 , Y10S430/146 , Y10S430/167
摘要： PROBLEM TO BE SOLVED: To obtain a resist material sensitive to high energy rays, having excellent sensitivity in the wave lengths of , R , R to R , and R to R are each H, F, an alkyl or a fluorinated alkyl; R is F or a fluorinated alkyl; R and R are each H or an acid-instable group; R and R are each F, an alkyl or a fluorinated alkyl; R is C(CF3 )2 OR ; R is H or an acid-unstable group; 0
摘要翻译：要解决的问题为了获得对高能量射线敏感的抗蚀剂材料，在<= 200nm，特别是<= 170nm的波长下具有优异的灵敏度，进一步具有改进的抗蚀剂透明度和优异的分辨率，对基底的粘附性和等离子体耐蚀刻性。解决方案：含有式（1a）和（1b）或式（1a），（1b）和（1c）的重复单元的高分子量化合物（其中R 1，R 2，R 5， R 7和R 10至R 12各自为H，F，烷基或氟化烷基; R 3为F或氟化烷基; R 4和R 8为每个H或酸不稳定基团; R 9和R 14各自为F，烷基或氟化烷基; R 13为C（CF 3）2 OR 15; R 15为H 或酸不稳定基团; 0

5. 发明专利

JP2009139926A Patterning process 有权
标题翻译：绘图过程
公开(公告)号：JP2009139926A
公开(公告)日：2009-06-25
申请号：JP2008202940
申请日：2008-08-06
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , YOSHIHARA TAKAO , TAKEMURA KATSUYA , KAWAI YOSHIO
IPC分类号： G03F7/40 , C08F220/28 , G03F7/039 , H01L21/027
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0397 , G03F7/2041 , G03F7/38 , H01L21/0274 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： PROBLEM TO BE SOLVED: To provide a patterning process in which a first resist film is cured by irradiation with ultrashort-wavelength light of ≤180 nm wavelength to prevent mixing of the first and second resist films and dissolution of a first resist pattern in a developer in second development. SOLUTION: The patterning process comprises: applying a first positive resist material containing a polymer compound onto a substrate to form a first resist film; exposing the resist film with high-energy radiation after heat treatment; developing the resist film with a developer after heat treatment to form a first resist pattern; causing the first resist pattern to crosslink and cure by irradiation with high-energy radiation of ≤180 nm wavelength or an electron beam; further applying a second positive resist material containing a polymer compound onto the substrate to form a second resist film; exposing the second resist film with high-energy radiation after heat treatment; and developing the second resist film with a developer after heat treatment to form a second resist pattern. By forming the second resist pattern in the space of the first resist pattern, double patterning which reduces the pitch between patterns to one half is performed and the substrate can be processed by a single dry etching. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种图案化工艺，其中通过用≤180nm波长的超短波长光照射来固化第一抗蚀剂膜，以防止第一和第二抗蚀剂膜的混合和第一抗蚀剂图案的溶解在开发商二次开发中。解决方案：图案化工艺包括：将含有聚合物化合物的第一正性抗蚀剂材料施加到基底上以形成第一抗蚀剂膜; 热处理后用高能量辐射曝光抗蚀膜; 在热处理后用显影剂显影抗蚀剂膜以形成第一抗蚀剂图案; 使得第一抗蚀剂图案通过用≤180nm波长的高能辐射或电子束照射而交联和固化; 进一步将含有聚合物化合物的第二正性抗蚀剂材料施加到所述基底上以形成第二抗蚀剂膜; 热处理后用高能量辐射曝光第二抗蚀膜; 以及在热处理之后用显影剂显影第二抗蚀剂膜以形成第二抗蚀剂图案。通过在第一抗蚀剂图案的空间中形成第二抗蚀剂图案，进行将图案之间的间距减小到一半的双重图案化，并且可以通过单次干蚀刻来处理基板。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006259760A Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：JP2006259760A
公开(公告)日：2006-09-28
申请号：JP2006123344
申请日：2006-04-27
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HATAKEYAMA JUN , WATANABE ATSUSHI , HARADA YUJI , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , OTANI MITSUTAKA , MIYAZAWA SATORU , TSUTSUMI KENTARO , MAEDA KAZUHIKO
IPC分类号： G03F7/38 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method in which wettability of a developer is excellent and with which no defect etc. is produced after development, even in the case of using a resist containing a highly water-repellent base polymer having fluorine or silicon.
SOLUTION: The pattern forming method is characterized by: forming a resist film on a substrate by applying a resist material with the base polymer containing fluorine atoms or silicon atoms thereto; subsequently exposing the resist film with an exposure wavelength of 180 nm or less, and post-exposure-baking the exposed resist film; subsequently prewet-processing with a resist surface processing agent composition composed of an aqueous solution containing a fluorine based surfactant which has an amine salt of a carboxylic or sulfonic acid as a hydrophilic group, of which the surface tension at 25°C is 25 dyne/cm or less, and of which the pH at 25°C is 7 or less; and subsequently conducting development. According to the invention, the wettability of the resist film using the base polymer containing the fluorine atoms or the silicon atoms toward the developer is made excellent, and a resist pattern without any defect caused by defective development is formed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：为了提供显影剂的润湿性优异并且显影后不产生缺陷等的图案形成方法，即使在使用含有高度疏水性基础聚合物的抗蚀剂的情况下具有氟或硅。解决方案：图案形成方法的特征在于：通过将抗蚀剂材料与含有氟原子或硅原子的基础聚合物一起涂覆在基板上形成抗蚀剂膜; 随后使曝光波长为180nm以下的抗蚀剂膜曝光，曝光后曝光的抗蚀剂膜; 随后用由具有羧酸或磺酸的胺盐作为亲水基团的含氟基表面活性剂的水溶液组成的抗蚀剂表面处理剂组合进行预湿处理，其中25℃下的表面张力为25达因/ cm以下，25℃下的pH为7以下。并随后进行开发。根据本发明，使用含有氟原子或硅原子的基础聚合物对显影剂的抗蚀剂膜的润湿性优异，并且形成没有由显影不良引起的任何缺陷的抗蚀剂图案。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2006213835A Polymer compound, resist material, and pattern-forming method 有权
标题翻译：聚合物，耐腐蚀材料和图案形成方法
公开(公告)号：JP2006213835A
公开(公告)日：2006-08-17
申请号：JP2005028618
申请日：2005-02-04
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , MAEDA KAZUHIKO , KOMORIYA HARUHIKO , OTANI MITSUTAKA
IPC分类号： C08F220/24 , C08F220/28 , C08F232/08 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/24 , C08F220/26 , C08F220/28 , C08F232/08 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a new fluorine-containing polymer compound for manufacturing a resist material which is excellent in the transparency to a laser beam having a wavelength of 300 nm or less, especially a wavelength of 200 nm or less, and in the dry etching resistance and the alkali development characteristics; a resist material containing this polymer compound in the base polymer, especially a chemically amplifying positive-type resist material; and a pattern-forming method by using this. SOLUTION: The polymer compound has a weight-average molecular weight of 1,000-500,000 and contains repeating units expressed by general formulae (1a) through (1d), wherein R 1 is an acid unstable group, R 2 is a single bond or a methylene group; 0 COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题为了提供一种用于制造抗波材料的新型含氟聚合物化合物，该抗蚀剂材料对于波长为300nm以下，特别是200nm以下的波长的激光束的透明度优异，并具有耐干蚀刻和耐碱发展的特点; 在基础聚合物中含有该高分子化合物的抗蚀剂材料，特别是化学放大型正型抗蚀剂材料; 和使用它的图案形成方法。高分子化合物的重均分子量为1,000〜500,000，含有通式（1a）〜（1d）表示的重复单元，其中，R 1 为酸不稳定基团 R 2是单键或亚甲基; 0

8. 发明专利

JP2005240024A Polymer compound, resist material, and pattern forming method 有权
标题翻译：聚合物，耐腐蚀材料和图案形成方法
公开(公告)号：JP2005240024A
公开(公告)日：2005-09-08
申请号：JP2005015496
申请日：2005-01-24
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , MAEDA KAZUHIKO , KOMORIYA HARUHIKO , YAMANAKA KAZUHIRO
IPC分类号： G03F7/004 , C08F20/22 , C08F212/14 , C08F220/10 , C08F224/00 , C08F232/08 , C08F234/00 , G03C1/76 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0395 , G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a resist material excellent in the transmissivity of far ultraviolet rays with a wavelength of 300 nm or below, especially ArF (193 nm), especially a novel polymer compound useful as the base polymer of a chemically amplified resist material, a resist material containing the same and, a pattern forming method using the same. SOLUTION: The subject polymer compound is constituted of repeating units represented by formulae (1a) (1b) and (1c) (wherein R 1 , R 2 , R 5 and R 6 are each H or F, R 3 and R 7 are each F or a fluorinated alkyl group, R 4 is an acid unstable group, R 8 is an adhesion group, R 9a , R 9b , R 9c and R 9d are each H or an alkyl group being an adhesion group, at least two of R 9a -R 9d may be bonded to form a ring but all of R 9a -R 9d are not hydrogen atom at the same time, R 10 is methylene group, a polymeric compound, oxygen atom or sulfur atom and (d) is 0 or 1). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供波长为300nm以下的远紫外线，特别是ArF（193nm）的透射率优异的抗蚀剂材料，特别是可用作化学式的基础聚合物的新型高分子化合物放大抗蚀剂材料，含有该抗蚀剂材料的抗蚀剂材料和使用该抗蚀剂材料的图案形成方法。解决方案：本发明聚合物化合物由式（1a）（1b）和（1c）表示的重复单元构成（其中R 1 ，R 2 ，R 每个H或F，R SP 3，或者R SP 6各自为F或氟代烷基基团R 4 是酸不稳定基团，R 8 是粘合基团，R 9a，/ / SP> ，R 9c 和R 9d 分别为H或烷基为粘合基团，R“ 9d 可以键合形成环，但是R 10和R 11都不同时为氢原子， SP>为亚甲基，高分子化合物，氧原子或硫原子，（d）为0或1）。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2005146252A Polymer compound, resist material and pattern formation method 有权
标题翻译：聚合物，耐腐蚀材料和图案形成方法
公开(公告)号：JP2005146252A
公开(公告)日：2005-06-09
申请号：JP2004168247
申请日：2004-06-07
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , MAEDA KAZUHIKO , KOMORIYA HARUHIKO , YAMANAKA KAZUHIRO
IPC分类号： G03F7/004 , C08F220/28 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a novel fluorine containing polymer compound useful as a base resin for radiation sensitivity resist excellent in properties such as transparency to radiations at wave length of 200 nm or less, adhesiveness to a base plate, affinity to a developing solution and dry etching resistance. SOLUTION: The polymer compound contains repeating unit shown by formula (1) and at least one of repeating units shown by general formulae (2a) to (2d) wherein R 1 represents fluorine atom or a fluorinated alkyl group, R 2 represents a single bond, an optionally fluorinated alkylene group, R 3 and R 4 each represent hydrogen or a fluorine atom, or an optionally fluorinated alkyl group and at least one contains one or more fluorine atoms, R 5 represents a hydrogen atom or an acid labile group, R 6 represents an acid labile group, an adhesive group or an optionally fluorinated alkyl group and a represents 1 or 2. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种新颖的含氟聚合物化合物，其可用作用于辐射敏感性的基础树脂，其性质优异，例如在波长为200nm或更小的波长下的透光性，对基板的粘附性，对显影液和耐干蚀刻性。解决方案：聚合物化合物含有式（1）所示的重复单元和通式（2a）至（2d）所示的重复单元中的至少一个，其中R 1表示氟原子或氟化烷基，R SP 2表示单键，任选氟化的亚烷基，R SP 3，R SP 4，各自表示氢或氟原子，或任选氟化的烷基，并且至少一个含有一个或多个氟原子，R 5表示氢原子或酸不稳定基团，R 6表示酸不稳定性基团，粘合剂基团或任选氟化的烷基，并且表示1或2.版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005133066A High molecular compound and positive resist material, and method for forming pattern using the same 有权
标题翻译：高分子化合物和正极材料，以及使用其形成图案的方法
公开(公告)号：JP2005133066A
公开(公告)日：2005-05-26
申请号：JP2004215907
申请日：2004-07-23
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , KAWAI YOSHIO
IPC分类号： G03F7/033 , C08F220/18 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist material having high resolution with sensitivity in the case exposed by high energy rays and little line edge roughness owing to suppression of swelling during development and leaving little residue after the development. SOLUTION: The high molecular compound has at least a repeating unit expressed by following general formula (1a) and a repeating unit expressed by following general formula (1b) and/or a repeating unit expressed by following general formula (1c). The positive resist material is produced by blending the high molecular compound as a base resin. COPYRIGHT: (C)2005,JPO&NCIPI

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