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1. 发明专利

JP2009191151A Polymer compound, resist material, and method for patterning 有权
标题翻译：聚合物化合物，耐腐蚀材料和方法
公开(公告)号：JP2009191151A
公开(公告)日：2009-08-27
申请号：JP2008032921
申请日：2008-02-14
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , MAEDA KAZUNORI , KOBAYASHI TOMOHIRO
IPC分类号： C08F220/26 , G03F7/004 , G03F7/023 , G03F7/039 , G03F7/11 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0392 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a polymer compound (A) achieving high lithography performance with few development defects, giving a resist material using the polymer compound having excellent water repellency and water slipping property in immersion lithography.
SOLUTION: A polymer compound (A) obtained through copolymerization of a monomer (1) or (2) having a hexafluoroalcohol side chain whose hydroxy group has been protected and a monomer (3) having an acid labile group is used as an additive to a photoresist composition for immersion lithography.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有很少显影缺陷的高光刻性能的高分子化合物（A），使用在浸渍光刻中具有优异的防水性和水滑性的高分子化合物得到抗蚀剂材料。解决方案：通过使具有羟基被保护的六氟醇侧链的单体（1）或（2）和具有酸不稳定基团的单体（3））共聚得到的高分子化合物（A）被用作用于浸没光刻的光致抗蚀剂组合物的添加剂。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008003569A Resist protective film material and pattern forming method 有权
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：JP2008003569A
公开(公告)日：2008-01-10
申请号：JP2007108546
申请日：2007-04-17
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , WATANABE TAKESHI
IPC分类号： G03F7/11 , G03F7/004 , G03F7/033 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist protective film material capable of securely obtaining a rectangular satisfactory resist pattern, even when a protective film is formed on a photoresist film. SOLUTION: The resist protective film material for forming the protective film on the photoresist film includes a polymer compound, containing a repeating unit having at least one among at least a carboxyl group, an α trifluoro methyl alcohol and an amine compound. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：即使在光致抗蚀剂膜上形成保护膜，也可以提供能够可靠地获得矩形令人满意的抗蚀剂图案的抗蚀剂保护膜材料。解决方案：用于在光致抗蚀剂膜上形成保护膜的抗蚀保护膜材料包括含有至少羧基，α三氟甲醇和胺化合物中的至少一种的重复单元的高分子化合物。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007233322A Resist protective film material and pattern forming method 有权
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：JP2007233322A
公开(公告)日：2007-09-13
申请号：JP2006137257
申请日：2006-05-17
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , WATANABE TAKESHI
IPC分类号： G03F7/11 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a protective film material effective for liquid immersion lithography, the material ensuring favorable liquid immersion lithography, being removable simultaneously with a photoresist layer during development, and having excellent process applicability, and to provide a pattern forming method using the material. SOLUTION: The resist protective film material contains a polymer compound having a partial structure expressed by general formula (1). In formula (1), R 1 represent a single bond or a 1-10C straight-chain, branched or cyclic alkylene group; R 2 , R 3 , R 4 are selected from hydrogen atoms or 1-20C straight-chain, branched or cyclic alkyl groups or fluoroalkyl groups, at least one of R 2 , R 3 , R 4 is a fluoroalkyl group substituted with one or more fluorine atoms and at least one of them is an alky group containing no fluorine, and two or more of R 2 , R 3 , R 4 are inhibited to be hydrogen atoms. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供对于液浸光刻有效的保护膜材料，确保有利的液浸光刻的材料在显影期间与光致抗蚀剂层同时移除并且具有优异的工艺适用性，并且提供图案形成使用材料的方法。抗蚀剂保护膜材料含有具有由通式（1）表示的部分结构的高分子化合物。在式（1）中，R“SP”表示单键或1-10C直链，支链或环状亚烷基; R 2 ，R SP 3，R SP 3，或选自氢原子或1-20C直链，支链或环状烷基或氟代烷基，R SP 2，R SP 3，R SP 4中的至少一个是被一个或多个氟原子取代的氟烷基，并且至少一个它们是不含氟的烷基，R 2 SP 2，R SP 3，R SP 4中的两个或更多个被抑制为氢原子。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2007058187A Resist protective coating material and patterning process 有权
标题翻译：耐腐蚀涂料和图案处理
公开(公告)号：JP2007058187A
公开(公告)日：2007-03-08
申请号：JP2006197612
申请日：2006-07-20
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , KAWAI YOSHIO , ENDO MASATAKA , SASAKO MASARU , KOMORIYA HARUHIKO , OTANI MITSUTAKA , MIYAZAWA SATORU , MAEDA KAZUHIKO
IPC分类号： G03F7/11 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist protective coating material in which a resist protective coating to be formed on a resist film is water-insoluble and dissolvable in an alkaline aqueous solution, and is immiscible with the resist film and which facilitates favorable immersion lithography. SOLUTION: The resist protective coating material contains a polymer compound having a repeating unit (A) and/or (B) expressed by general formula (1). COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种抗蚀剂保护涂层材料，其中在抗蚀剂膜上形成的抗蚀保护涂层是水不溶性的并且可溶于碱性水溶液中，并且与抗蚀剂膜不混溶并且有利于有利的浸没式光刻技术。抗蚀剂保护涂层材料含有具有由通式（1）表示的重复单元（A）和/或（B））的高分子化合物。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006328259A Polymer compound, resist material and pattern formation method 有权
标题翻译：聚合物，耐腐蚀材料和图案形成方法
公开(公告)号：JP2006328259A
公开(公告)日：2006-12-07
申请号：JP2005155343
申请日：2005-05-27
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , MAEDA KAZUHIKO , KOMORIYA HARUHIKO , OTANI MITSUTAKA
IPC分类号： C08F20/22 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a polymer compound capable of exhibiting a similar high performance even in ArF liquid immersion lithography for performing exposure by inserting a liquid into a space between a projection lens and a wafer in which a resist material using it has an excellent resolution in ArF exposure, a small line edge roughness and excellent etching-proof property, particularly a characteristic that a surface roughness after etching is small. SOLUTION: The polymer compound contains a repeating unit represented by general formula (1) and has a weight average molecular weight in the range of 1,000-500,000. In the formula, R 1 represents a fluorine atom or a straight or branched ring-like fluorinated alkyl group having 1-10 carbon atoms; R 2 represents a straight, branched or ring-like alkylene group or fluorinated alkylene group having 1-10 carbon atoms; and R 3 represents an acid unstable group. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使在ArF液浸光刻中也可以显示出类似高性能的高分子化合物，以通过将液体插入投影透镜和使用其的抗蚀剂材料的晶片之间的空间中进行曝光在ArF曝光中具有优异的分辨率，小的线边缘粗糙度和优异的耐腐蚀性，特别是蚀刻后的表面粗糙度小的特征。解决方案：聚合物化合物含有由通式（1）表示的重复单元，其重均分子量在1,000-500,000的范围内。在该式中，R“SP”表示氟原子或具有1-10个碳原子的直链或支链状的含氟烷基; R 2表示具有1-10个碳原子的直链，支链或环状亚烷基或氟化亚烷基; 并且R 3 表示酸不稳定基团。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006308647A Resist protective film material and pattern forming method 有权
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：JP2006308647A
公开(公告)日：2006-11-09
申请号：JP2005127696
申请日：2005-04-26
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI
IPC分类号： G03F7/11 , C08F14/18 , C08F20/28 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist protective film material which is insoluble in water but soluble in an alkaline aqueous solution, does not mix with a resist layer, forms a protective film (resist upper layer film) capable of being stripped together with development during development with alkaline water, and ensures wider process applicability, and to provide a pattern forming method using such a material.
SOLUTION: The resist protective film material contains a high molecular compound having a partial structure represented by formula (1) wherein R
1 is H, F or CF
3 .
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供不溶于水但可溶于碱性水溶液的抗蚀保护膜材料，不与抗蚀剂层混合，形成能够剥离的保护膜（抗蚀剂上层膜）连同用碱性水开发的发展，并确保更广泛的工艺适用性，并提供使用这种材料的图案形成方法。抗蚀剂保护膜材料含有具有由式（1）表示的部分结构的高分子化合物，其中R 1 是H，F或CF 3 。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005126558A Polymeric compound, resist material, and method for pattern formation 有权
标题翻译：聚合物，耐腐蚀材料和形成图案的方法
公开(公告)号：JP2005126558A
公开(公告)日：2005-05-19
申请号：JP2003363134
申请日：2003-10-23
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , MAEDA KAZUHIKO , KOMORIYA HARUHIKO , YAMANAKA KAZUHIRO
IPC分类号： C08G61/02 , C08F16/26 , C08F20/28 , C08F32/08 , C08F220/24 , G03C1/10 , G03C1/76 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , C08F220/24 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To obtain a new fluoropolymeric compound excellent in transparency to radiations of ≤200 nm wavelength, especially ≤160 nm wavelength, adhesion to substrate, affinity for developing liquid, dry etching resistance, or the like, thus useful as a base resin for radiation-sensitive resists. SOLUTION: The polymeric compound has a weight-average molecular weight of 1,000-500,000 and comprises recurring units each having a partial structure represented by formula(1) ( wherein, R 1 is a single bond or a 1-20C straight-chain, branched or cyclic alkylene or fluoroalkylene group; and R 2 and R 3 are each H or a 1-20C straight-chain, branched or cyclic alkyl or fluoroalkyl group, wherein at least one of R 2 and R 3 contains one or more fluorine atoms ). COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题为了获得对于波长≤200nm，特别是≤160nm波长的辐射，对基板的粘合性，对显影液的亲和性，耐干蚀刻性等的透明性的透明性优异的新的含氟聚合物化合物，因此有用作为辐射敏感抗蚀剂的基础树脂。解决方案：聚合物的重均分子量为1,000-500,000，并且包含各自具有由式（1）表示的部分结构的重复单元（其中，R 1 是单键或1-20C的直链，支链或环状的亚烷基或氟代亚烷基; R“SP”2和R“3”均为H或1-20C直链，支链或环状烷基或氟代烷基，其中R“SP”2“和”R“3”中的至少一个含有一个或多个氟原子）。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005070531A Resist material and method for forming pattern 有权
标题翻译：用于形成图案的材料和方法
公开(公告)号：JP2005070531A
公开(公告)日：2005-03-17
申请号：JP2003301500
申请日：2003-08-26
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , MAEDA KAZUHIKO , KOMORIYA HARUHIKO , YAMANAKA KAZUHIRO
IPC分类号： G03C1/494 , G03F7/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0395 , G03F7/0397 , Y10S430/108
摘要： PROBLEM TO BE SOLVED: To provide a resist material having improved transparency and alkali solubility contrast of the resist and having excellent durability against plasma etching. SOLUTION: The resist material comprises a polymer compound having a repeating unit expressed by formula (1) and a polymer compound having a repeating unit expressed by formula (2). In the formulae, each of R 1 and R 2 represents H or an acid unstable group, a and b satisfy 0.3≤a+b≤1, R 3 represents an acid unstable group, each of R 4 and R 5 represents H, an alkyl group or an acid unstable group, R 6 represents H, an alkyl group or an acid unstable group, X 1 represents a single bond, a methylene group or an ethylene group, and c, d, e and f satisfy 0 COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有改进的抗蚀剂的透明度和碱溶性对比度并且对等离子体蚀刻具有优异的耐久性的抗蚀剂材料。抗蚀剂材料包括具有由式（1）表示的重复单元的高分子化合物和具有由式（2）表示的重复单元的高分子化合物。式中，R 1 和R 2 表示H或酸不稳定基团，a和b满足0.3≤a+b≤1，R 3 表示酸不稳定基团，R“SP”4“和”SP“5中的每一个表示H，烷基或酸不稳定基团，R 6， SP>表示H，烷基或酸不稳定基团，X 1表示单键，亚甲基或亚乙基，c，d，e和f满足0

9. 发明专利

JP2003292547A Polymer compound, resist material and method of pattern formation 有权
标题翻译：聚合物复合材料及其形成方法
公开(公告)号：JP2003292547A
公开(公告)日：2003-10-15
申请号：JP2002103576
申请日：2002-04-05
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO
IPC分类号： C08F236/20 , G03F7/004 , G03F7/039
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , Y10S430/108
摘要： PROBLEM TO BE SOLVED: To provide a resist material that is sensitive to high-energy rays and has high sensitivity at a wavelength of ≤200 nm, particularly at a wavelength of ≤170 nm, further of which the base polymer is a fluorine-containing resin of carboxylic acid ester pendant type and has excellent transparency, high resolution and resistance to plasma etching properties.
SOLUTION: The polymer compound contains recurring units represented by general formula (1a) and general formula (1b (wherein R
1 is F, an alkyl or a fluorinated alkyl; R
2a and R
2b are each H or -R
3 -CO
2 R
4 and at least one of R
2a and R
2b is -R
3 -CO
2 R
4 ; R
3 is an alkylene or a fluorinated alkylene; R
4 is H, an unstable acidic group, an adhesive group or a 1-20C fluorinated alkyl group) and has a weight-average molecular weight of 1,000-500,000.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供对高能射线敏感的抗蚀剂材料，并且在波长≤200nm，特别是在≤170nm的波长下具有高灵敏度，其中基础聚合物是具有优异的透明性，高分辨率和耐等离子体蚀刻性能的羧酸酯侧链的含氟树脂。解决方案：聚合物化合物含有由通式（1a）和通式（1b）表示的重复单元，其中R 1为：F，烷基或氟化烷基; R“ / SP>和R 2b 分别为H或-R 3 2 4 和至少一个 R＆lt; SP＆gt; 2a＆lt; SP＆gt;和＆lt; SP＆gt; 2b＆lt; SP＆gt;是＆lt; SP＆gt; R 3是亚烷基或氟化亚烷基; R 4是H，不稳定的酸性基团，粘合剂基团或1-20C氟化烷基），并且具有重均分子量为1,000-500,000。版权所有（C）2004，JPO

10. 发明专利

JP2012173479A Resist composition and pattern forming method using the same 有权
标题翻译：使用它的耐蚀组合物和图案形成方法
公开(公告)号：JP2012173479A
公开(公告)日：2012-09-10
申请号：JP2011034748
申请日：2011-02-21
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KOBAYASHI TOMOHIRO , OSAWA YOICHI , HARADA YUJI , SUGA YUKI
IPC分类号： G03F7/004 , C08F220/22 , C08F220/28 , C08F220/30 , C09K3/00 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a pattern forming method, the composition having improved lithographic performances as well as showing a high receding contact angle, and capable of suppressing generation of a blob defect in both of immersion exposure using a protective film and immersion exposure without using a protective film.SOLUTION: The resist composition comprises: a polymeric compound (A) showing changes in alkali-solubility by an acid; a photo-acid generator (B) responding to high energy beams to generate a sulfonic acid expressed by general formula (1): R-CFSOH; and a polymeric additive (C) expressed by general formula (2).
摘要翻译：要解决的问题为了提供抗蚀剂组合物和图案形成方法，该组合物具有改进的光刻性能以及显示出高的后退接触角，并且能够抑制两次浸渍曝光中的斑点缺陷的产生，使用保护膜和浸没曝光而不使用保护膜。抗蚀剂组合物包括：显示酸的碱溶性变化的高分子化合物（A）响应高能束产生由通式（1）表示的磺酸的光酸产生剂（B）：R 200 -CF 2 SO 3 H; 和由通式（2）表示的聚合物添加剂（C）。版权所有（C）2012，JPO＆INPIT

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