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1. 发明专利

JP2009251216A Double patterning process 有权
标题翻译：双重图案处理
公开(公告)号：JP2009251216A
公开(公告)日：2009-10-29
申请号：JP2008098024
申请日：2008-04-04
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： TAKEMURA KATSUYA , HATAKEYAMA JUN , NODA KAZUMI , NAKAJIMA MUTSUO , OHASHI MASAKI , ISHIHARA TOSHINOBU
IPC分类号： G03F7/40 , C08F220/28 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0035 , G03F7/0046 , G03F7/0382 , G03F7/0397 , G03F7/40
摘要： PROBLEM TO BE SOLVED: To provide a double pattering process by which a fine pattern can be formed by easily reversing a positive pattern obtained by pattering a positive resist film. SOLUTION: The double pattering process includes: coating a composition for forming a chemically amplified positive resist film to form a resist film on a processable substrate, patternwise exposing the resist film, bringing an acid labile group of a resin in an exposed part into an elimination reaction to make the resin alkali-soluble, and developing to form a first positive pattern; eliminating the acid labile group in the first pattern and forming cross-linkage; coating a second composition for forming a chemically amplified negative resist film as a composition for forming a reversal film to form a second resist film, patternwise irradiating the resist film, making a resin in an exposed part insoluble in an alkaline developer, and developing to form a second negative pattern. The last development step includes the reversal transfer step of dissolving away the first pattern which has been converted to be soluble in developer as a space pattern in the second resist film, whereby a second pattern is formed while obtaining the reversal transfer pattern of the first resist film. According to the invention, high-accuracy positive-negative reversal can be performed through the simple steps. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种双图案化方法，通过简单地反转通过图案化正电阻膜获得的正图案，可以形成精细图案。解决方案：双重图案化方法包括：涂覆用于形成化学放大的正性抗蚀剂膜的组合物，以在可加工的基材上形成抗蚀剂膜，以图案方式暴露抗蚀剂膜，将酸性不稳定的树脂基团引入暴露部分进入消除反应，使树脂碱溶性，并显影形成第一阳性图案; 消除酸性不稳定组在第一种模式并形成交联; 涂覆用于形成化学放大的负性抗蚀剂膜的第二组合物作为用于形成反转膜的组合物以形成第二抗蚀剂膜，以图案方式照射抗蚀剂膜，使暴露部分中的树脂不溶于碱性显影剂，并显影形成第二负模式。最后的显影步骤包括反转转印步骤，将已经转化为可溶于显影剂的第一图案作为空间图案溶解在第二抗蚀剂膜中，由此形成第二图案，同时获得第一抗蚀剂的反转印图案电影。根据本发明，可以通过简单的步骤进行高精度的正负反转。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009211036A Patterning process 有权
标题翻译：绘图过程
公开(公告)号：JP2009211036A
公开(公告)日：2009-09-17
申请号：JP2008240270
申请日：2008-09-19
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , YOSHIHARA TAKAO , ISHIHARA TOSHINOBU
IPC分类号： G03F7/40 , C08F220/26 , G03F7/004 , G03F7/039 , G03F7/11 , G03F7/20 , H01L21/027
CPC分类号： G03F7/2024 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/40 , H01L21/0273 , H01L21/0337 , H05K3/061 , H05K2203/0582
摘要： PROBLEM TO BE SOLVED: To provide a patterning process by which a reversal film material is filled into the gap in a positive resist pattern without causing damage to the pattern and high-accuracy positive/negative reversal is performed through simple steps. SOLUTION: The patterning process using positive/negative reversal includes: coating a chemically amplified positive resist film-forming composition comprising a resin which has an acid labile group-bearing repeating unit and becomes soluble in an alkali developer, a photoacid generator or the photoacid generator and a thermal acid generator, and an organic solvent onto a substrate to be processed, and prebaking the composition to form a resist film; irradiating the resist film with high-energy radiation, post-exposure heating for bringing acid labile groups of the resin in an exposed portion into an elimination reaction, and developing the exposed resist film with an alkali developer to form a positive pattern; exposing or heating the positive pattern to eliminate the acid labile groups of the resin, thereby improving alkali solubility, and crosslinking the resin to impart resistance to an organic solvent used in a reversal film-forming composition; forming a reversal film with the reversal film-forming composition; and dissolving away the positive pattern with an alkaline wet etchant. The reversal film material can be filled into the gap in the positive resist pattern without causing damage to the pattern and high-accuracy positive/negative reversal can be performed through such simple steps. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种图案化处理，通过该图案化工艺，反转膜材料以正的抗蚀剂图案填充到间隙中，而不会损害图案，并且通过简单的步骤执行高精度的正/负反转。解决方案：使用正/负反转的图案化方法包括：涂覆化学放大的正型抗蚀剂成膜组合物，其包含具有酸不稳定基团的重复单元并变得可溶于碱性显影剂的树脂，光致酸产生剂或光酸产生剂和热酸产生剂，以及有机溶剂加到待加工的基材上，预烘烤该组合物以形成抗蚀膜; 以高能量辐射照射抗蚀剂膜，曝光后加热，将暴露部分中的酸不稳定基团引入消除反应中，并用碱显影剂显影曝光的抗蚀剂膜以形成正图案; 暴露或加热阳性图案以消除树脂的酸不稳定基团，从而改善碱溶解性，并交联树脂以赋予反转成膜组合物中使用的有机溶剂耐受性; 用反转成膜组合物形成反转膜; 并用碱性湿蚀刻剂溶解阳性图案。可以将反转膜材料填充到正抗蚀剂图案的间隙中，而不会对图案造成损害，并且可以通过这样简单的步骤进行高精度的正/负反转。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008268180A Method for manufacturing substrate for microarray 有权
标题翻译：微波炉制造基板的方法
公开(公告)号：JP2008268180A
公开(公告)日：2008-11-06
申请号：JP2008009708
申请日：2008-01-18
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KUSAKI WATARU , KANOU TAKESHI , ISHIHARA TOSHINOBU
IPC分类号： G01N33/543 , G01N33/53 , G01N37/00
CPC分类号： G01N33/54353
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate for microarray which will allow, when a monomolecular film with silicon oxide chains formed on a substrate is used for the immobilization of a target molecule, a chemically amplified type resist film to be directly applied onto the substrate so as to simplify the process and enable fine processing, without causing therewith any problems such as the degradation of resolution and detachment, through more simplified procedures than are possible with the conventional method.
SOLUTION: The method for manufacturing the substrate for microarray includes at least the steps of: forming a monomolecular film on the surface of a substrate using a silane compound represented by the general formula (1) Y
3 Si-(CH
2 )
m -X, wherein m represents an integer from 3 to 20; X represents a hydroxyl group precursor functional group; and Y independently represents a halogen atom or an alkoxy group having 1-4 carbon atoms; and converting the hydroxyl group precursor functional group represented by X to a hydroxyl group.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种微阵列用基板的制造方法，其特征在于，在将基板上形成的氧化硅链的单分子膜用于固定靶分子时，可以使用化学放大型的抗蚀剂膜直接施加到基板上，以便简化处理并且能够通过比常规方法可能的更简化的程序而不引起诸如分辨率和分离的劣化的任何问题的精细处理。解决方案：用于制造微阵列基板的方法至少包括以下步骤：使用由通式（1）表示的硅烷化合物在基板的表面上形成单分子膜Y 3 其中m表示3至20的整数; X 1表示氢原子， X表示羟基前体官能团; Y独立地表示卤素原子或具有1-4个碳原子的烷氧基; 并将由X表示的羟基前体官能团转化成羟基。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2006011054A Rinsing solution and method for forming resist pattern using same 审中-公开
标题翻译：用于形成耐磨模式的冲压解决方案和方法
公开(公告)号：JP2006011054A
公开(公告)日：2006-01-12
申请号：JP2004188253
申请日：2004-06-25
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： WATANABE SATOSHI , KOBAYASHI TOMOHIRO , KAWAI YOSHIO , ISHIHARA TOSHINOBU
IPC分类号： G03F7/32 , C03C23/00 , H01L21/027
CPC分类号： G03F7/322 , G03F7/32
摘要： PROBLEM TO BE SOLVED: To prevent production or deposition of a resist insoluble component in a lithography process using a resist material which reacts with various kinds of radiation (UV rays, deep UV rays, VUV rays, electron beams, X rays, various kinds of laser light such as excimer laser light), to effectively remove a resist insoluble component even when the component deposits, and to prevent decrease in the yield due to defects which may occur on a resist or a substrate and are caused by a resist insoluble component, as much as possible in a lithography process using a resist in the manufacture of a semiconductor integrated circuit such as a semiconductor LSI.
SOLUTION: The rinsing solution to be used in a lithography process using a resist contains a water soluble polymer. The rinsing solution is used for a method for forming a resist pattern.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了防止在使用与各种辐射（UV射线，深紫外线，VUV射线，电子束，X射线等）反应的抗蚀剂材料的光刻工艺中生成或沉积抗蚀剂不溶性成分，各种激光如准分子激光等），即使在成分沉积时也有效地除去抗蚀剂不溶性成分，并且防止由于抗蚀剂或基材上可能发生的缺陷而导致的由抗蚀剂或抗蚀剂引起的成品率的降低在使用抗蚀剂的半导体集成电路例如半导体LSI的光刻工艺中尽可能地使用不溶性成分。解决方案：在使用抗蚀剂的光刻工艺中使用的冲洗溶液含有水溶性聚合物。冲洗溶液用于形成抗蚀剂图案的方法。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2004190036A Polymer silicone compound, resist material and process for pattern formation 有权
标题翻译：聚合物硅氧烷化合物，耐蚀材料和形成图案的方法
公开(公告)号：JP2004190036A
公开(公告)日：2004-07-08
申请号：JP2004009982
申请日：2004-01-19
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： NAKAJIMA MUTSUO , KANEKO ICHIRO , ISHIHARA TOSHINOBU , TSUCHIYA JUNJI , HATAKEYAMA JUN , NAGURA SHIGEHIRO
IPC分类号： G03F7/039 , C08G77/04 , G03F7/075 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a polymer silicone compound suitable for a base resin of a resist material used for microfabrication in a production process of a semiconductor element, to provide the resist material suitable for exposure with a light source of high energy rays such as far ultraviolet rays, electron beams and X-rays, and a process for pattern formation. SOLUTION: The polymer silicone compound comprises a repeating unit shown by formula (1) or a repeating unit in which a part or whole H atom(s) of carboxyl groups is replaced with acid labile group(s), wherein Z is a non-aromatic mono- or poly-cyclic hydrocarbon group or a bridged cyclic hydrocarbon group; Z' is a hydrocarbon group, or a non-aromatic mono- or poly-cyclic hydrocarbon group or a bridged cyclic hydrocarbon group; (x), (y) and (z) are each an integer of 1-5 corresponding to valencies of above Z and Z'; R 1 is OCHR-R'-OH or NHCHR-R'-OH; R 2 is an alkyl or an alkenyl group or a non-aromatic univalent polycyclic hydrocarbon group or a bridged cyclic hydrocarbon group; p1 and p2 are each a positive number; p3 is 0 or a positive number and p4 is 0, or p1 and p4 are each a positive number; p3 is 0 or a positive number and p2 is 0. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：为了获得适用于在半导体元件的制造过程中用于微细加工的抗蚀剂材料的基础树脂的聚合物硅氧烷化合物，以提供适合于用高能量的光源曝光的抗蚀剂材料射线如远紫外线，电子束和X射线，以及图案形成的过程。解决方案：聚合物硅氧烷化合物包含式（1）所示的重复单元或其中羧基的部分或全部部分或全部被酸不稳定基团取代的重复单元，其中Z为非芳香族单环或多环烃基或桥环状烃基; Z'是烃基，或非芳族单环或多环烃基或桥连环烃基; （x），（y）和（z）各自为对应于Z和Z'以上的化合价的1-5的整数; R SP 1是OCHR-R'-OH或NHCHR-R'-OH; R 2是烷基或链烯基或非芳族一价多环烃基或桥连环烃基; p1和p2分别为正数; p3为0或正数，p4为0，p1和p4分别为正数， p3为0或正数，p2为0.版权所有（C）2004，JPO＆NCIPI

6. 发明专利

JP2012018198A Patterning process 有权
标题翻译：绘图过程
公开(公告)号：JP2012018198A
公开(公告)日：2012-01-26
申请号：JP2010153510
申请日：2010-07-06
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , ISHIHARA TOSHINOBU
IPC分类号： G03F7/004 , C08F126/02 , G03F1/54 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern having a dual tone property in which an unexposed part and an overexposed part are insoluble in an alkaline developer whereas only a part with an intermediate exposure amount is soluble in the developer, by using a resist material that has a composition in which total amount of an amino group from a quencher and a photobase generator group is more than the amount of an acid from a photoacid generator, according to the present invention.SOLUTION: A patterning process provides a pattern in which an unexposed part of film where exposure amount is low and an overexposed part of film where exposure amount is high are not dissolved in a developer but an exposed region where exposed amount is intermediate is dissolved in the developer. The pattern is obtained by applying a resist material on a substrate, baking and exposing by using a halftone phase shift mask having transmission in the range of 10 to 40%, followed by steps of exposing, baking, and developing. The resist material comprises a high molecular compound that includes a repeating unit having an acid labile group and is hardly soluble in an alkaline developer, a photoacid generator, a photobase generator that generates an amino group, a quencher that has the amino group and neutralizes an acid generated by the photoacid generator thereby inactivating, and an organic solvent.
摘要翻译：要解决的问题：为了提供具有双重色调特性的图案，其中未曝光部分和曝光过度部分不溶于碱性显影剂，而仅具有中等曝光量的部分可溶于显影剂中，通过使用抗蚀剂材料，其具有根据本发明的来自猝灭剂和光碱产生剂组的氨基的总量大于来自光致酸产生剂的酸的量的组成。解决方案：图案化工艺提供了一种图案，其中暴露量低的膜的未曝光部分和曝光量高的膜的曝光过度部分不溶解在显影剂中，而暴露量为中间的曝光区域是溶解在开发商中。通过在基板上涂布抗蚀剂材料，通过使用透射率在10〜40％的半色调相移掩模进行烘烤和曝光，接着进行曝光，烘烤和显影的步骤，获得图案。抗蚀剂材料包括高分子化合物，其包含具有酸不稳定基团并且几乎不溶于碱性显影剂的重复单元，光致酸产生剂，产生氨基的光碱产生剂，具有氨基的猝灭剂并中和由光酸产生剂产生的酸因而失活，以及有机溶剂。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2008268179A Method for manufacturing substrate for making microarray 有权
标题翻译：制造微晶基板的方法
公开(公告)号：JP2008268179A
公开(公告)日：2008-11-06
申请号：JP2008009434
申请日：2008-01-18
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KUSAKI WATARU , KANOU TAKESHI , ISHIHARA TOSHINOBU
IPC分类号： G01N35/02 , C12M1/00 , C12N15/09 , G01N33/53 , G01N37/00
CPC分类号： G01N33/54353 , B01J2219/00317 , B01J2219/00608 , B01J2219/00617 , B01J2219/00621 , B01J2219/00626 , B01J2219/00635 , B01J2219/00637 , B01J2219/00659 , B01J2219/00722
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate for making a microarray which will ensure the secure immobilization of a material in a site-selective manner at a low cost. SOLUTION: The method includes the steps of: forming a monomolecular film on the surface of a substrate using a silane compound represented by the general formula (1) Y 3 Si-(CH 2 ) m -X(1), wherein m represents an integer from 3 to 20; X represents a hydroxyl group precursor functional group which will be converted to a hydroxyl group when exposed to acid; and Y independently represents a halogen atom or alkoxy group having 1-4 carbon atoms; and converting the hydroxyl group precursor functional group represented by X to a hydroxyl group. The step of converting the hydroxyl group precursor functional group represented by X to the hydroxyl group comprises forming, on the monomolecular film, a polymer layer containing a compound as a photo-acid generating agent, and then irradiating the substrate with a pattern shape using a high energy ray. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造微阵列的基板的制造方法，其将以低成本确保以选择性方式可靠地固定材料。解决方案：该方法包括以下步骤：使用由通式（1）表示的硅烷化合物在基材表面上形成单分子膜Y Si-（CH 2）其中，m表示3〜20的整数， X表示当暴露于酸时将转化为羟基的羟基前体官能团; Y独立地表示卤素原子或具有1-4个碳原子的烷氧基; 并将由X表示的羟基前体官能团转化成羟基。将由X表示的羟基前体官能团转化为羟基的步骤包括在单分子膜上形成含有作为光酸产生剂的化合物的聚合物层，然后使用高能射线版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2005284216A Target for forming film and method for manufacturing phase shift mask blank 审中-公开
标题翻译：用于形成膜的目标和制造相移膜掩模的方法
公开(公告)号：JP2005284216A
公开(公告)日：2005-10-13
申请号：JP2004102288
申请日：2004-03-31
申请人： Shin Etsu Chem Co Ltd , Toppan Printing Co Ltd , 信越化学工業株式会社 , 凸版印刷株式会社
发明人： YOSHIKAWA HIROKI , ISHIHARA TOSHINOBU , OKAZAKI SATOSHI , INAZUKI SADAOMI , SAGA TADASHI , OKADA KIMIHIRO , IWAKATA MASAHIDE , HARAGUCHI TAKASHI , FUKUSHIMA YUICHI
IPC分类号： C23C14/06 , C23C14/34 , G03F1/32 , G03F1/54 , G03F1/68 , H01L21/027 , G03F1/08
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3414 , C23C14/3464
摘要： PROBLEM TO BE SOLVED: To provide a target for forming a film for manufacturing a halftone phase shift mask and its blank which can respond to shorter wavelengths of exposure light and have excellent chemical resistance, and to provide a method for manufacturing the halftone phase shift mask blank.
SOLUTION: The target for forming a film is used to manufacture a halftone phase shift mask blank which has a single-layer or multilayer semitransparent film having a controlled phase and transmittance on a transparent substrate and simultaneously contains a Si element, Mo element and Zr element as structural elements of at least one layer of the semitransparent film, and the target contains at least two elements of Mo and Zr, with 0.05 to 5 molar ratio of the content ratio (Zr/Mo). A halftone phase shift mask and its blank which can respond to shorter wavelengths of exposure light and have excellent chemical resistance and patterning accuracy can be easily obtained by the present invention.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造可以响应较短波长的曝光光并具有优异的耐化学性的半色调相移掩模及其空白的膜的形成目标，并且提供一种制造半色调的方法相移掩模空白。解决方案：用于形成膜的目标用于制造半色调相移掩模板，其具有在透明基板上具有受控相位和透射率的单层或多层半透明膜，并且同时含有Si元素，Mo元素和Zr元素作为至少一层半透明膜的结构元素，并且靶含有Mo和Zr的至少两种元素，含量比（Zr / Mo）为0.05-5摩尔％。通过本发明可以容易地获得能够对较短波长的曝光光进行响应且具有优异的耐化学性和图案精度的半色调相移掩模及其空白。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2004158481A Method of manufacturing semiconductor device 审中-公开
公开(公告)号：JP2004158481A
公开(公告)日：2004-06-03
申请号：JP2002319883
申请日：2002-11-01
申请人： Hitachi Kokusai Electric Inc , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , 信越化学工業株式会社 , 松下電器産業株式会社 , 株式会社日立国際電気
发明人： YAMAMOTO KAZUHIKO , ASAI MASAYUKI , HORII SADAYOSHI , ISHIHARA TOSHINOBU , KANEKO ISAO
IPC分类号： H01L21/316 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which the deterioration of the electrical characteristic of a semiconductor device caused by fetched byproducts of reactions and the drop of the capacity of the device caused by the oxidation of the substrate can be prevented at the time of causing a high dielectric film to deposit on the substrate, and at the same time, the compositional control of a multi-element high dielectric film can be made easier. SOLUTION: In this method, the high dielectric film is formed by oxidizing a metal film by supplying oxidizing gas to the film after the film is formed on the semiconductor substrate by supplying raw material gas containing a metal but no oxygen. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2004133029A Halftone phase shift mask blank and method for manufacturing the sane 有权
公开(公告)号：JP2004133029A
公开(公告)日：2004-04-30
申请号：JP2002294863
申请日：2002-10-08
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： OKAZAKI SATOSHI , ISHIHARA TOSHINOBU
IPC分类号： B32B9/00 , C23C14/06 , C23C14/08 , C23C14/35 , G03F1/32 , G03F1/68 , G03F1/08
CPC分类号： G03F1/32 , C23C14/0676 , C23C14/08 , G03F1/68
摘要： PROBLEM TO BE SOLVED: To provide a halftone phase shift mask blank which excels in workability, and has an excellent chemical resistance, and resistance to alkaline chemicals in particular, and a method for manufacturing the same.
SOLUTION: The halftone phase shift mask blank has a phase shifter film consisting of a metal silicide compound containing one or more metals selected from molybdenum, tantalum, zirconium, chromium, and tungsten, and one or more elements selected from oxygen, nitrogen and carbon on a transparent substrate.
COPYRIGHT: (C)2004,JPO

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