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1. 发明专利

JP2013051421A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013051421A
公开(公告)日：2013-03-14
申请号：JP2012206132
申请日：2012-09-19
申请人： Sharp Corp , シャープ株式会社
发明人： CHIKAMA YOSHIMASA , NISHIKI HIROHIKO , OTA AYAFUMI , MIZUNO YUJI , HARA TAKESHI , AIDA TETSUYA , SUZUKI MASAHIKO , TAKEI MICHIKO , NAKAGAWA OKIFUMI , HARUMOTO YOSHIMASA
IPC分类号： H01L21/768 , G02F1/1345 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/336 , H01L23/522 , H01L29/417 , H01L29/786
CPC分类号： H01L27/1225 , G02F1/13458 , G02F1/136213 , H01L27/124 , H01L27/1244 , H01L27/1248
摘要： PROBLEM TO BE SOLVED: To control a tapered shape of a contact hole in a terminal part with high accuracy.SOLUTION: A semiconductor device comprises: a thin film transistor including an oxide semiconductor layer 7a, a source wiring 13as and a drain electrode 13ad; and a terminal part including a first connection part 3c, a second connection part 13c and a third connection part 19c formed on the second connection part. The second connection part contacts the first connection part in a first opening provided in first and second insulation films 5,9. The third connection part 19c contacts the second connection part in a second opening provided in a protection film 15. The first opening is formed by simultaneously etching the first insulation film 5 and the second insulation film 9. The second opening is formed by etching the protection film 15 separately from the first and second insulation film. The second connection part 13c covers end faces of the first and the second insulation films in the first opening and not covers an end face of the protection film 15 in the second opening.
摘要翻译：要解决的问题：以高精度控制端子部分中的接触孔的锥形形状。解决方案：半导体器件包括：薄膜晶体管，其包括氧化物半导体层7a，源极布线13as和漏极13ad; 以及包括形成在第二连接部上的第一连接部3c，第二连接部13c和第三连接部19c的端子部。第二连接部分在设置在第一和第二绝缘膜5,9中的第一开口中接触第一连接部分。第三连接部分19c在设置在保护膜15中的第二开口中与第二连接部分接触。第一开口通过同时蚀刻第一绝缘膜5和第二绝缘膜9而形成。第二开口通过蚀刻保护薄膜15与第一和第二绝缘薄膜分开。第二连接部13c覆盖第一开口中的第一绝缘膜和第二绝缘膜的端面，并且不覆盖第二开口中的保护膜15的端面。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2010128323A Active matrix substrate and liquid crystal display 审中-公开
标题翻译：活性基质和液晶显示
公开(公告)号：JP2010128323A
公开(公告)日：2010-06-10
申请号：JP2008304732
申请日：2008-11-28
申请人： Sharp Corp , シャープ株式会社
发明人： HARA TAKESHI , CHIKAMA YOSHIMASA , NAKAGAWA OKIFUMI , NAKANO YUYA , NAKAMURA WATARU , KITO KENICHI , TANAKA AKINORI
IPC分类号： G02F1/1368 , G09F9/30 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide constitution that metal included in a wiring line is not corroded even when a defect is caused in an electrode terminal in the connection part of the wiring line and the electrode terminal in an active matrix substrate.
SOLUTION: In the active matrix substrate including the connection part 16, the connection part 16 includes a first metal layer 1b, a second metal layer 1a layered on the first metal layer 1b so as to be narrower than the width of the first metal layer 1b, a protective part 2 layered on the second metal layer 1a so as to completely cover the second metal layer 1a and to be narrower than the width of the first metal layer 1b, and the electrode terminal 3 layered on the protective part 2 so as to completely cover the protective part 2 and to come in contact with the first metal layer 1b. Thereby, the metal included in the wiring line is not corroded even when a defective part 4 is caused in the electrode terminal 3.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：即使当在有源矩阵基板中的布线和连接部分的电极端子中的电极端子发生缺陷时，提供布线中包含的金属也不被腐蚀的结构。解决方案：在包括连接部16的有源矩阵基板中，连接部16包括第一金属层1b，第一金属层1b上形成的第二金属层1a，其比第一金属层1b的宽度窄。金属层1b，层叠在第二金属层1a上的保护部2，以完全覆盖第二金属层1a，并且比第一金属层1b的宽度窄;以及层叠在保护部2上的电极端子3 以完全覆盖保护部分2并与第一金属层1b接触。因此，即使在电极端子3中产生有缺陷的部分4，包括在布线中的金属也不被腐蚀。（C）2010，JPO＆INPIT

3. 发明专利

JP2004247704A Tft array substrate, liquid crystal display device, their manufacturing method and electronic equipment 有权
公开(公告)号：JP2004247704A
公开(公告)日：2004-09-02
申请号：JP2003207744
申请日：2003-08-18
申请人： Sharp Corp , シャープ株式会社
发明人： FUJII AKIYOSHI , NAKABAYASHI KEIYA , OCHI HISAO , HARA TAKESHI , SAITO YUICHI
IPC分类号： G02F1/1368 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/52 , H01L27/12 , H01L29/423 , H01L29/786
CPC分类号： H01L27/1292 , H01L29/42384 , H01L29/66765 , H01L29/78633 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To realize reduction in the number of production processes and in production costs. SOLUTION: In a TFT array substrate 11, gate electrodes 13 branching into TFT sectional gate electrodes 66 are formed on a glass substrate 12 and gate insulation layers 15 and semiconductor layers 16 are laminated in this order on the sectional gate electrodes 66 to form TFT sections 22. The semiconductor layer 16 of this TFT array substrate 11 has a shape of a droplet and then the semiconductor layer can be formed by dripping a droplet or a resist layer for processing the semiconductor layer can be formed directly in the same way. COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2012248865A Active matrix substrate and display panel including the same 审中-公开
标题翻译：有源矩阵基板和显示面板包括它们
公开(公告)号：JP2012248865A
公开(公告)日：2012-12-13
申请号：JP2012163419
申请日：2012-07-24
申请人： Sharp Corp , シャープ株式会社
发明人： CHIKAMA YOSHIMASA , KATSUI HIROMITSU , NISHIKI HIROHIKO , OTA AYAFUMI , MIZUNO YUJI , HARA TAKESHI , AIDA TETSUYA , SUZUKI MASAHIKO , TAKEI MICHIKO , NAKAGAWA OKIFUMI , HARUMOTO YOSHIMASA
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336
CPC分类号： H01L27/1225 , G02F1/136213 , G02F1/1368 , G02F2001/13606 , G02F2001/136231 , G02F2001/136236 , G02F2201/501 , H01L27/1248 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To suppress deterioration in characteristics of a TFT including a semiconductor layer of an oxide semiconductor, without increasing the number of photo masks.SOLUTION: An active matrix substrate includes a plurality of matrix-like pixel electrodes P, a TFT 5 connected to each of the pixel electrodes P, and a plurality of source lines 15a extending in parallel with each other. The TFT 5 includes: a gate electrode 11a on an insulating substrate 10; a gate insulating film 12a covering the gate electrode 11a; an oxide semiconductor layer 13a provided on the gate insulating film 12a so as to overlap the gate electrode 11a; and a source electrode 17a and a drain electrode 17b which are connected to the oxide semiconductor layer 13a. A protective insulating film 14a covering the oxide semiconductor layer 13a is provided between the source and drain electrodes 17a, 17b and the oxide semiconductor layer 13a, each of the source lines 15a is formed of a metal material, and the source and drain electrodes 17a, 17b are formed of a material same as that of each of the pixel electrodes P.
摘要翻译：要解决的问题：为了抑制包括氧化物半导体的半导体层的TFT的特性的劣化，而不增加光掩模的数量。解决方案：有源矩阵基板包括多个矩阵状像素电极P，连接到每个像素电极P的TFT 5以及彼此平行延伸的多个源极线15a。 TFT5包括：绝缘基板10上的栅电极11a; 覆盖栅极11a的栅极绝缘膜12a; 设置在栅极绝缘膜12a上以与栅电极11a重叠的氧化物半导体层13a; 以及与氧化物半导体层13a连接的源电极17a和漏电极17b。覆盖氧化物半导体层13a的保护绝缘膜14a设置在源极和漏极17a，17b和氧化物半导体层13a之间，每个源极线15a由金属材料形成，源极和漏极17a， 17b由与每个像素电极P相同的材料形成。版权所有：（C）2013，JPO＆INPIT

5. 发明专利

JP2010243594A Thin-film transistor substrate, and method of manufacturing the same 审中-公开
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：JP2010243594A
公开(公告)日：2010-10-28
申请号：JP2009089376
申请日：2009-04-01
申请人： Sharp Corp , シャープ株式会社
发明人： CHIKAMA YOSHIMASA , NAKAGAWA OKIFUMI , HARA TAKESHI , NISHIKI HIROHIKO
IPC分类号： G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To increase the capacitance of an auxiliary capacitor formed on a substrate, and to prevent the fluctuation thereof.
SOLUTION: When forming the semiconductor layers 13, 17 of a TFT substrate 1 provided with a TFT 4 and the auxiliary capacitor 5, IGZO whose main components are indium, gallium, zinc and oxygen is used. When manufacturing the TFT substrate 1, as processing for reducing the resistance of the auxiliary capacitor semiconductor layer 17, plasma processing is performed after forming a passivation layer 20 and before forming a pixel electrode 21. Thus, the auxiliary capacitor semiconductor layer 17 is made into a conductor, the capacitance of the auxiliary capacitor 5 is increased, and the capacitor fluctuation of the auxiliary capacitor 5 is prevented.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：增加形成在基板上的辅助电容器的电容，并防止其波动。解决方案：当形成设置有TFT 4的TFT基板1和辅助电容器5的半导体层13,17时，使用主要成分为铟，镓，锌和氧的IGZO。当制造TFT基板1时，作为用于降低辅助电容器半导体层17的电阻的处理，在形成钝化层20之后和形成像素电极21之前进行等离子体处理。因此，辅助电容器半导体层17被制成导体，辅助电容器5的电容增加，并且防止了辅助电容器5的电容器波动。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010010247A Substrate carrying tool and method of manufacturing element substrate 审中-公开
标题翻译：基板承载工具及制造元件基板的方法
公开(公告)号：JP2010010247A
公开(公告)日：2010-01-14
申请号：JP2008165414
申请日：2008-06-25
申请人： Sharp Corp , シャープ株式会社
发明人： AIDA TETSUYA , HARA TAKESHI , INOUE TAKESHI
IPC分类号： H01L21/677 , G02F1/13 , G02F1/1333 , G09F9/00
摘要： PROBLEM TO BE SOLVED: To reliably form an adhesion layer within a predetermined region using a liquefied adhesive material.
SOLUTION: The substrate carrying tool 20 includes a hold substrate 10a holding a flexible substrate on its surface and the liquefied adhesive 12a adhering the flexible substrate. A frame-shaped tacking layer 11a encapsulating the adhesive 12a within it when the flexible substrate is held is formed on the surface of the hold substrate 10a.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：使用液化粘合剂材料在预定区域内可靠地形成粘合层。解决方案：基板承载工具20包括在其表面上保持柔性基板的保持基板10a和粘附柔性基板的液化粘合剂12a。当保持柔性基板时，在保持基板10a的表面上形成有将粘合剂12a封装在其内的框状固定层11a。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009177090A Method for manufacturing thin-film laminated device and method for manufacturing liquid crystal display device 审中-公开
标题翻译：制造薄膜层压器件的方法及制造液晶显示器件的方法
公开(公告)号：JP2009177090A
公开(公告)日：2009-08-06
申请号：JP2008016757
申请日：2008-01-28
申请人： Sharp Corp , シャープ株式会社
发明人： HARA TAKESHI , CHIKAMA YOSHIMASA , KANZAKI YOSUKE , NAKANO YUYA
IPC分类号： H01L21/3065 , G02F1/13 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To suppress an increase in manufacturing steps, to suppress the deformation of a plastic substrate and separation of the plastic substrate from a support substrate in a manufacturing step and to suppress the intrusion of a processing solution into a gap between the plastic substrate and the support substrate. SOLUTION: Before evacuation processing for evacuating the inside of a processing chamber after carrying the plastic substrate 11 supported by the support substrate 1 into the processing chamber, a through-hole 11a is formed on the plastic substrate 11, and then in the evacuation processing, the through-hole 3 is covered with a cover member 3 configured so as to exhaust gas existing between the plastic substrate 11 and the support substrate 1 to the outside via the through-hole 11. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了抑制制造步骤的增加，在制造步骤中抑制塑料基板的变形和塑料基板与支撑基板的分离，并且抑制处理溶液侵入间隙在塑料基板和支撑基板之间。解决方案：在将由支撑基板1支撑的塑料基板11运送到处理室之后，在将处理室的内部抽真空的排气处理之前，在塑料基板11上形成通孔11a，然后在通气孔3被覆盖件3覆盖，盖构件3被构造成通过通孔11将存在于塑料基板11和支撑基板1之间的废气排出到外部。（C） 2009年，JPO＆INPIT

8. 发明专利

JP2004349583A Manufacturing method of transistor 审中-公开
标题翻译：晶体管的制造方法
公开(公告)号：JP2004349583A
公开(公告)日：2004-12-09
申请号：JP2003146907
申请日：2003-05-23
申请人： Masashi Kawasaki , Hideo Ono , Sharp Corp , シャープ株式会社 , 英男大野 , 雅司川崎
发明人： HARA TAKESHI , FUJITA TATSUYA , OCHI HISAO , YOSHIOKA HIROTO , SUGIHARA TOSHINORI , KAWASAKI MASASHI , ONO HIDEO
IPC分类号： H01L29/786 , H01L21/336
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a bottom gate type transistor without damaging zinc oxide and without deteriorating indication quality using an ink jet method which is simple in operation and advantageous in cost when the zinc oxide is employed as a semiconductor element. SOLUTION: The manufacturing method of a bottom gate type transistor is adapted such that a gate electrode 11 is formed on a glass substrate 10 into a predetermined shape, and then a gate insulating film 12 is laminated, on which film 12 a source electrode 13 and a drain electrode 14 are in turn disposed. In the manufacturing method, the source electrode 13 and the drain electrode 14 are formed into predetermined shapes, and then a channel layer 15 containing the zinc oxide is formed into a predetermined shape with an ink jet method. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造底栅型晶体管的方法，而不损害氧化锌并且不会使用使用简单操作的喷墨方法而劣化指示质量，并且当将氧化锌用作半导体元件。解决方案：底栅型晶体管的制造方法适于使得栅极电极11形成在玻璃基板10上成为预定形状，然后层叠栅极绝缘膜12，其上膜12为源极电极13和漏电极14依次设置。在制造方法中，将源电极13和漏电极14形成为规定的形状，然后利用喷墨法将含有氧化锌的沟道层15形成为规定的形状。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004126612A Liquid crystal display and its manufacturing method 审中-公开
公开(公告)号：JP2004126612A
公开(公告)日：2004-04-22
申请号：JP2003372136
申请日：2003-10-31
申请人： Sharp Corp , シャープ株式会社
发明人： HARA TAKESHI , KOBAYASHI KAZUKI
IPC分类号： G02F1/1335 , G02F1/1343
摘要： PROBLEM TO BE SOLVED: To improve the production yield by preventing electric corrosion reaction between a transparent electrode and a reflective electrode in a pixel part of a reflection/transmission dual-type liquid crystal display. SOLUTION: The reflecting part and the transmitting part of the reflection/transmission dual-type liquid crystal display are made of the respective electrode materials. These electrode materials are partly or wholly overlapped in the boundary region between them through an interlayer film. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2012215907A Connection terminal and display device with the connection terminal 有权
标题翻译：连接终端和显示设备与连接终端
公开(公告)号：JP2012215907A
公开(公告)日：2012-11-08
申请号：JP2012170476
申请日：2012-07-31
申请人： Sharp Corp , シャープ株式会社
发明人： KITO KENICHI , NAKAMURA WATARU , TANAKA AKINORI , HARA TAKESHI , NAKANO YUYA
IPC分类号： G09F9/30 , G02F1/1343
CPC分类号： H05K1/115 , G02F1/1345 , G02F1/13458 , H05K2201/0326 , H05K2201/09509
摘要： PROBLEM TO BE SOLVED: To prevent an open circuit due to corrosion at the connection terminal portion in a display device, etc.SOLUTION: A connection terminal is formed by connecting first wiring (2) and second wiring (6) at a plurality of portions through a transparent conductive thin film (10). As the first wiring (2) and the second wiring (6) are connected to each other in parallel in the connection terminal portion and are connected to each other at more than one portion, the risk of an open circuit is greatly reduced.

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