专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013051421A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013051421A
公开(公告)日：2013-03-14
申请号：JP2012206132
申请日：2012-09-19
申请人： Sharp Corp , シャープ株式会社
发明人： CHIKAMA YOSHIMASA , NISHIKI HIROHIKO , OTA AYAFUMI , MIZUNO YUJI , HARA TAKESHI , AIDA TETSUYA , SUZUKI MASAHIKO , TAKEI MICHIKO , NAKAGAWA OKIFUMI , HARUMOTO YOSHIMASA
IPC分类号： H01L21/768 , G02F1/1345 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L21/336 , H01L23/522 , H01L29/417 , H01L29/786
CPC分类号： H01L27/1225 , G02F1/13458 , G02F1/136213 , H01L27/124 , H01L27/1244 , H01L27/1248
摘要： PROBLEM TO BE SOLVED: To control a tapered shape of a contact hole in a terminal part with high accuracy.SOLUTION: A semiconductor device comprises: a thin film transistor including an oxide semiconductor layer 7a, a source wiring 13as and a drain electrode 13ad; and a terminal part including a first connection part 3c, a second connection part 13c and a third connection part 19c formed on the second connection part. The second connection part contacts the first connection part in a first opening provided in first and second insulation films 5,9. The third connection part 19c contacts the second connection part in a second opening provided in a protection film 15. The first opening is formed by simultaneously etching the first insulation film 5 and the second insulation film 9. The second opening is formed by etching the protection film 15 separately from the first and second insulation film. The second connection part 13c covers end faces of the first and the second insulation films in the first opening and not covers an end face of the protection film 15 in the second opening.
摘要翻译：要解决的问题：以高精度控制端子部分中的接触孔的锥形形状。解决方案：半导体器件包括：薄膜晶体管，其包括氧化物半导体层7a，源极布线13as和漏极13ad; 以及包括形成在第二连接部上的第一连接部3c，第二连接部13c和第三连接部19c的端子部。第二连接部分在设置在第一和第二绝缘膜5,9中的第一开口中接触第一连接部分。第三连接部分19c在设置在保护膜15中的第二开口中与第二连接部分接触。第一开口通过同时蚀刻第一绝缘膜5和第二绝缘膜9而形成。第二开口通过蚀刻保护薄膜15与第一和第二绝缘薄膜分开。第二连接部13c覆盖第一开口中的第一绝缘膜和第二绝缘膜的端面，并且不覆盖第二开口中的保护膜15的端面。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013246257A Liquid crystal display panel and manufacturing method thereof 审中-公开
标题翻译：液晶显示面板及其制造方法
公开(公告)号：JP2013246257A
公开(公告)日：2013-12-09
申请号：JP2012118955
申请日：2012-05-24
申请人： Sharp Corp , シャープ株式会社
发明人： HARUMOTO YOSHIMASA
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1343 , G09F9/00 , G09F9/30 , G09F9/40
摘要： PROBLEM TO BE SOLVED: To prevent electric leakage of a leading wiring part from occurring in a liquid crystal display panel of a super narrow frame type.SOLUTION: A liquid crystal display panel can constitute one display screen by multiple connection, and includes a leading wiring structure 20 in a frame area around a display area. The leading wiring structure 20 includes an auxiliary line electrode 23 adjacent to a gate line electrode 12 and formed on the same flat surface 22a, an insulating film 24 laminated on the gate line electrode and the auxiliary line electrode, and a source line electrode 25 laminated on the insulating film. The gate line electrode 12 and the auxiliary line electrode 23 each have a trapezoidal cross section whose both lateral faces have gentle gradient, and an inclination angle θ of the lateral face with respect to the flat surface 22a is in a range of 20-40°.
摘要翻译：要解决的问题：为了防止在超窄框式液晶显示面板中发生引导布线部分的漏电。解决方案：液晶显示面板可以通过多个连接构成一个显示屏，并且包括引线结构20在显示区域周围的框区域中。前导布线结构20包括与栅线电极12相邻并形成在同一平面22a上的辅助线电极23，层叠在栅极线电极和辅助线电极上的绝缘膜24和层叠的源极线电极25 在绝缘膜上。栅极线电极12和辅助线电极23均具有梯形截面，其两个侧面具有缓和的梯度，倾斜角度为θ。相对于平坦表面22a的侧面的宽度在20-40°的范围内。

3. 发明专利

JP2012248865A Active matrix substrate and display panel including the same 审中-公开
标题翻译：有源矩阵基板和显示面板包括它们
公开(公告)号：JP2012248865A
公开(公告)日：2012-12-13
申请号：JP2012163419
申请日：2012-07-24
申请人： Sharp Corp , シャープ株式会社
发明人： CHIKAMA YOSHIMASA , KATSUI HIROMITSU , NISHIKI HIROHIKO , OTA AYAFUMI , MIZUNO YUJI , HARA TAKESHI , AIDA TETSUYA , SUZUKI MASAHIKO , TAKEI MICHIKO , NAKAGAWA OKIFUMI , HARUMOTO YOSHIMASA
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336
CPC分类号： H01L27/1225 , G02F1/136213 , G02F1/1368 , G02F2001/13606 , G02F2001/136231 , G02F2001/136236 , G02F2201/501 , H01L27/1248 , H01L27/1288
摘要： PROBLEM TO BE SOLVED: To suppress deterioration in characteristics of a TFT including a semiconductor layer of an oxide semiconductor, without increasing the number of photo masks.SOLUTION: An active matrix substrate includes a plurality of matrix-like pixel electrodes P, a TFT 5 connected to each of the pixel electrodes P, and a plurality of source lines 15a extending in parallel with each other. The TFT 5 includes: a gate electrode 11a on an insulating substrate 10; a gate insulating film 12a covering the gate electrode 11a; an oxide semiconductor layer 13a provided on the gate insulating film 12a so as to overlap the gate electrode 11a; and a source electrode 17a and a drain electrode 17b which are connected to the oxide semiconductor layer 13a. A protective insulating film 14a covering the oxide semiconductor layer 13a is provided between the source and drain electrodes 17a, 17b and the oxide semiconductor layer 13a, each of the source lines 15a is formed of a metal material, and the source and drain electrodes 17a, 17b are formed of a material same as that of each of the pixel electrodes P.
摘要翻译：要解决的问题：为了抑制包括氧化物半导体的半导体层的TFT的特性的劣化，而不增加光掩模的数量。解决方案：有源矩阵基板包括多个矩阵状像素电极P，连接到每个像素电极P的TFT 5以及彼此平行延伸的多个源极线15a。 TFT5包括：绝缘基板10上的栅电极11a; 覆盖栅极11a的栅极绝缘膜12a; 设置在栅极绝缘膜12a上以与栅电极11a重叠的氧化物半导体层13a; 以及与氧化物半导体层13a连接的源电极17a和漏电极17b。覆盖氧化物半导体层13a的保护绝缘膜14a设置在源极和漏极17a，17b和氧化物半导体层13a之间，每个源极线15a由金属材料形成，源极和漏极17a， 17b由与每个像素电极P相同的材料形成。版权所有：（C）2013，JPO＆INPIT

4. 发明专利

JP2010287645A Thin film transistor, and method of manufacturing the same 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：JP2010287645A
公开(公告)日：2010-12-24
申请号：JP2009138832
申请日：2009-06-10
申请人： Sharp Corp , シャープ株式会社
发明人： INOUE TAKESHI , OKABE TATSU , KANEDA TAKESHI , AIDA TETSUYA , HARUMOTO YOSHIMASA
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/3205 , H01L21/336 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a thin film transistor increasing the operation speed by using a crystalline semiconductor layer of large mobility as a channel layer. SOLUTION: A laser beam absorbed into an amorphous silicon layer 106a is converted to heat in laser-annealing. The heat so converted melts the amorphous silicon layer 106a and is applied to a gate electrode 150 as radiation heat. However, in laser annealing, the gate electrode 150 is separated from a gate wiring 30, so that the applied heat raises the temperature of the gate electrode 150 by heat conduction from the gate electrode 150 to the gate wiring 30 without being radiated. Thus, heat generated in the amorphous silicon layer 106a on the gate electrode 150 is mainly used to melt and crystallize the amorphous silicon layer 106a and hence the grain diameter of the crystal of a microcrystal silicon layer 106b is increased and the mobility is increased. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供通过使用大迁移率的结晶半导体层作为沟道层来提高操作速度的薄膜晶体管。吸收到非晶硅层106a中的激光束在激光退火中被转换为热。这样转换的热量熔化非晶硅层106a并作为辐射热施加到栅电极150。然而，在激光退火中，栅电极150与栅极布线30分离，使得所施加的热量不会被辐射而从栅极电极150向栅极布线30的热传导提高栅电极150的温度。因此，主栅极电极150上的非晶硅层106a中产生的热量主要用于非晶硅层106a的熔化和结晶化，因此微晶硅层106b的晶体的晶粒直径增加，迁移率增加。版权所有（C）2011，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式