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1. 发明专利

JP2014112733A Photoelectric conversion device 审中-公开
标题翻译：光电转换器件
公开(公告)号：JP2014112733A
公开(公告)日：2014-06-19
申请号：JP2014055755
申请日：2014-03-19
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： OIKAWA YOSHIAKI , EGUCHI SHINGO , MASUYAMA MITSUO , KATANIWA MASATOSHI , SHOJI HIRONOBU , NAKATA MASATAKA
IPC分类号： H01L31/042
CPC分类号： B32B5/26 , B32B5/022 , B32B5/024 , B32B27/20 , B32B27/281 , B32B27/285 , B32B27/286 , B32B27/34 , B32B27/36 , B32B2250/40 , B32B2250/44 , B32B2260/023 , B32B2260/046 , B32B2262/023 , B32B2262/0253 , B32B2262/0261 , B32B2262/0269 , B32B2262/0276 , B32B2262/101 , B32B2262/106 , B32B2264/102 , B32B2264/105 , B32B2307/202 , B32B2307/206 , B32B2307/558 , B32B2307/712 , B32B2307/748 , B32B2457/00 , H01L31/02008 , H01L31/046 , H01L31/0463 , H01L31/048 , Y02E10/549 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable photoelectric conversion device which has flexibility and is resistant to external stress.SOLUTION: The photoelectric conversion device includes: a first sealing layer and a second sealing layer provided to face each other; and a photoelectric conversion element group provided to be held between the first sealing layer and the second sealing layer facing each other. The first sealing layer has a first structure in which a first fiber body is impregnated with a first organic resin, and the second sealing layer has a second structure in which a second fiber body is impregnated with a second organic resin. A region where the first sealing layer and the second sealing layer provided to face each other are directly bonded together is provided around the photoelectric conversion element group.
摘要翻译：要解决的问题：提供一种高度可靠的光电转换装置，其具有柔性并且能够抵抗外部应力。解决方案：光电转换装置包括：第一密封层和彼此相对设置的第二密封层; 以及设置在所述第一密封层和所述第二密封层之间保持的光电转换元件组。第一密封层具有第一结构，其中第一纤维体浸渍有第一有机树脂，并且第二密封层具有其中第二纤维体浸渍有第二有机树脂的第二结构。设置在光电转换元件组周围的将第一密封层和设置为彼此面对的第二密封层直接接合在一起的区域。

2. 发明专利

JP2013225155A Electronic paper 有权
标题翻译：电子纸
公开(公告)号：JP2013225155A
公开(公告)日：2013-10-31
申请号：JP2013150176
申请日：2013-07-19
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： OIKAWA YOSHIAKI , EGUCHI SHINGO , MASUYAMA MITSUO , KATANIWA MASATOSHI , SHOJI HIRONOBU , NAKATA MASATAKA
IPC分类号： G02F1/167 , G09F9/30 , G09F9/37
CPC分类号： G02F1/167 , G02F2201/50 , G02F2201/503 , G02F2202/22
摘要： PROBLEM TO BE SOLVED: To improve resistance of electronic paper to external stress.SOLUTION: The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit part, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.
摘要翻译：要解决的问题：提高电子纸对外部应力的抵抗力。解决方案：通过提供元件形成层来增加对外部应力的抵抗力，该元件形成层包括集成电路部分，第一电极，第二电极和带电粒子在第一绝缘膜之间，第一绝缘膜包括第一结构体，其中第一纤维体浸渍有第一有机树脂，第二绝缘膜包括第二结构体，其中第二纤维体浸渍有第二有机树脂树脂。

3. 发明专利

JP2013144844A Method for producing oxide semiconductor film 有权
标题翻译：氧化物半导体膜生产方法
公开(公告)号：JP2013144844A
公开(公告)日：2013-07-25
申请号：JP2012272630
申请日：2012-12-13
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MARUYAMA YOSHIKI , IMOTO YUKI , SATO HITOMI , WATANABE MASAHIRO , MASUYAMA MITSUO , OKAZAKI KENICHI , NAKAJIMA MOTOI , SHIMAZU TAKASHI
IPC分类号： C23C14/34 , C04B35/00 , H01L29/786
CPC分类号： C23C14/08 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To produce a semiconductor device including a transistor using an oxide semiconductor with high reliability because a transistor using the oxide semiconductor has sometimes less reliability compared to a transistor using amorphous silicon.SOLUTION: An oxide semiconductor film is deposited by a sputtering method, using a sputtering target comprising the oxide semiconductor having a crystalline region in which the c-axis, which is produced by mixing raw materials so that the composition ratio can achieve a crystal structure, is parallel to a normal vector of the top surface.
摘要翻译：要解决的问题：为了制造包括具有高可靠性的使用氧化物半导体的晶体管的半导体器件，因为与使用非晶硅的晶体管相比，使用氧化物半导体的晶体管有时具有更低的可靠性。解决方案：通过溅射来沉积氧化物半导体膜方法中，使用包含具有结晶区域的氧化物半导体的溅射靶，其中通过混合原料以使得组成比可以获得晶体结构而产生的c轴平行于顶表面的法线矢量。

4. 发明专利

JP2013144841A Target, method for using the target, and method for producing semiconductor device 有权
标题翻译：目标，使用目标的方法以及生产半导体器件的方法
公开(公告)号：JP2013144841A
公开(公告)日：2013-07-25
申请号：JP2012123954
申请日：2012-05-31
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MARUYAMA YOSHIKI , IMOTO YUKI , SATO HITOMI , WATANABE MASAHIRO , MASUYAMA MITSUO , OKAZAKI KENICHI , NAKAJIMA MOTOI , SHIMAZU TAKASHI
IPC分类号： C23C14/34 , C04B35/00 , C23C14/08 , H01L21/363 , H01L29/786
CPC分类号： C23C14/08 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To produce a semiconductor device including a transistor using an oxide semiconductor with high reliability because a transistor using the oxide semiconductor has sometimes less reliability compared to a transistor using amorphous silicon.SOLUTION: An oxide semiconductor film is deposited by a sputtering method, using a sputtering target comprising the oxide semiconductor having a crystalline region in which the c-axis, which is produced by mixing raw materials so that the composition ratio can achieve a crystal structure, is parallel to a normal vector of the top surface.
摘要翻译：要解决的问题：为了制造包括具有高可靠性的使用氧化物半导体的晶体管的半导体器件，因为与使用非晶硅的晶体管相比，使用氧化物半导体的晶体管有时具有更低的可靠性。解决方案：通过溅射来沉积氧化物半导体膜方法中，使用包含具有结晶区域的氧化物半导体的溅射靶，其中通过混合原料以使得组成比可以获得晶体结构而产生的c轴平行于顶表面的法线矢量。

5. 发明专利

JP2013084941A Semiconductor device and semiconductor device manufacturing method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2013084941A
公开(公告)日：2013-05-09
申请号：JP2012210014
申请日：2012-09-24
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： WATANABE MASAHIRO , MASUYAMA MITSUO , HANDA TAKUYA , OKAZAKI KENICHI
IPC分类号： H01L21/336 , H01L21/316 , H01L29/786
CPC分类号： H01L23/564 , H01L29/78606 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses electric characteristic deterioration caused by moisture, and provide a semiconductor device manufacturing method.SOLUTION: A semiconductor device comprises a structure in which a metal oxide layer is positioned in contact with an interlayer insulation layer covering a transistor. The meta oxide layer is composed of a lamination structure including a first metal oxide layer having an amorphous structure, a second metal oxide layer having a polycrystalline structure. The first metal oxide layer having the amorphous structure has no crystal grain boundary and wider grid spacing compared with a crystalline metal oxide layer and likely to trap moisture between grids. The second metal oxide layer having the polycrystalline structure has a dense structure in a crystal part except a crystal grain boundary part and exhibits extremely low moisture permeability. Because of this, moisture invasion to a transistor can be effectively prevented by the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer contacts the interlayer insulation layer.
摘要翻译：要解决的问题：提供抑制由水分导致的电特性劣化的半导体器件，并提供半导体器件制造方法。解决方案：半导体器件包括其中金属氧化物层定位成与覆盖晶体管的层间绝缘层接触的结构。超氧化物层由包括具有非晶结构的第一金属氧化物层，具有多晶结构的第二金属氧化物层的层叠结构构成。与结晶金属氧化物层相比，具有非晶结构的第一金属氧化物层不具有晶界和更宽的栅格间隔，并且可能捕获栅格之间的水分。具有多晶结构的第二金属氧化物层在除了晶界部分以外的晶体部分中具有致密结构，并且具有极低的透湿性。因此，通过包含第一金属氧化物层和第二金属氧化物层的金属氧化物层与层间绝缘层接触的结构，可以有效地防止对晶体管的水分侵入。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013065843A Semiconductor device and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013065843A
公开(公告)日：2013-04-11
申请号：JP2012190773
申请日：2012-08-31
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： WATANABE MASAHIRO , MASUYAMA MITSUO , HANDA TAKUYA , OKAZAKI KENICHI
IPC分类号： H01L21/336 , C23C14/08 , G02F1/1368 , G09F9/30 , H01L21/363 , H01L29/786 , H01L51/50 , H05B33/08 , H05B33/14
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/41733 , H01L29/78606
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxide semiconductor and having more stable electrical characteristics and high reliability, and a method for manufacturing the semiconductor device.SOLUTION: The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density higher than or equal to 3.2 g/cm.
摘要翻译：要解决的问题：提供一种包括氧化物半导体并具有更稳定的电气特性和高可靠性的半导体器件及其制造方法。解决方案：半导体器件包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，形成在氧化物半导体膜上的源电极和漏极，以及保护膜。保护膜包括金属氧化物膜，并且金属氧化物膜具有高于或等于3.2g / cm 2的膜密度 3 。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2013058738A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013058738A
公开(公告)日：2013-03-28
申请号：JP2012165293
申请日：2012-07-26
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： OKAZAKI KENICHI , WATANABE MASAHIRO , MASUYAMA MITSUO
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide an oxide semiconductor transistor including an oxide semiconductor layer having high conductivity.SOLUTION: A semiconductor device comprises: an oxide semiconductor layer having an oxide (IGZO) containing indium, gallium, and zinc, and having particles of an indium oxide; a channel formation region in the oxide semiconductor layer; a gate electrode overlapped via a gate insulation film; a source electrode and a drain electrode which are overlapped on a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top gate oxide semiconductor transistor or a bottom gate oxide semiconductor transistor. In addition, the oxide semiconductor layer may be formed on the source electrode and the drain electrode, or may be formed under the source electrode and the drain electrode.
摘要翻译：解决的问题：提供一种包括具有高导电性的氧化物半导体层的氧化物半导体晶体管。解决方案：半导体器件包括：具有含有铟，镓和锌的氧化物（IGZO）并具有氧化铟颗粒的氧化物半导体层; 氧化物半导体层中的沟道形成区; 栅极通过栅极绝缘膜重叠; 源电极和漏电极，其重叠在氧化物半导体层中的源极区域和漏极区域上。半导体器件可以是顶栅氧化物半导体晶体管或底栅氧化物半导体晶体管。此外，氧化物半导体层可以形成在源电极和漏电极上，或者可以形成在源电极和漏电极之下。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2010039479A Electronic paper 有权
标题翻译：电子纸
公开(公告)号：JP2010039479A
公开(公告)日：2010-02-18
申请号：JP2009158934
申请日：2009-07-03
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： OIKAWA YOSHIAKI , EGUCHI SHINGO , MASUYAMA MITSUO , KATANIWA MASATOSHI , SHOJI HIRONOBU , NAKATA MASATAKA
IPC分类号： G02F1/167 , G09F9/30 , G09F9/37
CPC分类号： G02F1/167 , G02F2201/50 , G02F2201/503 , G02F2202/22
摘要： PROBLEM TO BE SOLVED: To improve resistance of electronic paper to external stress. SOLUTION: The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit part, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提高电子纸对外部应力的抵抗力。解决方案：通过在包括第一和第二绝缘膜的第一绝缘膜之间提供包括集成电路部分，第一电极，第二电极和带电粒子的层的元件形成层来增加对外部应力的抵抗性其中第一纤维体浸渍有第一有机树脂的第一绝缘膜和包含第二结构体的第二绝缘膜，其中第二纤维体浸渍有第二有机树脂。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2017083891A 半導体装置审中-公开
公开(公告)号：JP2017083891A
公开(公告)日：2017-05-18
申请号：JP2017004169
申请日：2017-01-13
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： OIKAWA YOSHIAKI , EGUCHI SHINGO , MASUYAMA MITSUO , KATANIWA MASATOSHI , SHOJI HIRONOBU , NAKATA MASATAKA
IPC分类号： G02F1/167 , G02F1/1368 , G09F9/30 , H01L21/336 , H01L29/786
CPC分类号： G02F1/167 , G02F2201/50 , G02F2201/503 , G02F2202/22
摘要：【課題】新規な表示装置の作製方法を提供することを目的の一とする。【解決手段】新規な表示装置の作製方法であって、基板上方に剥離層を形成し、剥離層上方に第1の絶縁膜を形成し、第1の絶縁膜上方に第1の電極を形成し、剥離層上方及び第1の電極上方に第2の絶縁膜を形成し、第2の絶縁膜上方にトランジスタを形成し、トランジスタ上方に第3の絶縁膜を形成し、第3の絶縁膜上方に有機樹脂を形成し、剥離層において、トランジスタを含む素子層を基板から剥離し、素子層の剥離された面側に、第1の電極と対向する第2の電極を形成する。【選択図】図10

10. 发明专利

JP2014099599A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014099599A
公开(公告)日：2014-05-29
申请号：JP2013215219
申请日：2013-10-16
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , OKAZAKI KENICHI , MASUYAMA MITSUO , HANDA TAKUYA , WATANABE MASAHIRO , TOKUNAGA HAJIME
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L29/417 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1248 , G02F1/1368 , H01L21/70 , H01L27/1052 , H01L27/1225 , H01L29/24 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide stable electric characteristics to a transistor using an oxide semiconductor layer; and provide a semiconductor device which has the transistor and which is highly reliable.SOLUTION: A semiconductor device comprises: a multilayer film composed of oxide layers and oxide semiconductor layers; a gate insulation film provided in contact with the oxide layer; and a gate electrode provided on the multilayer film in an overlapping manner via the gate insulation film. The oxide layer includes an element in common with the oxide semiconductor layer and has energy gap larger than that of the oxide semiconductor layer, in which a composition between the oxide layer and the oxide semiconductor layer continuously changes.
摘要翻译：要解决的问题：为使用氧化物半导体层的晶体管提供稳定的电特性; 并提供具有晶体管并且是高可靠性的半导体器件。解决方案：一种半导体器件包括：由氧化物层和氧化物半导体层构成的多层膜; 设置成与所述氧化物层接触的栅极绝缘膜; 以及通过栅极绝缘膜以重叠的方式设置在多层膜上的栅电极。氧化物层包括与氧化物半导体层共同的元素，并且具有大于氧化物半导体层的能隙，其中氧化物层和氧化物半导体层之间的组成不断变化。

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