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1. 发明专利

JP2013084941A Semiconductor device and semiconductor device manufacturing method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2013084941A
公开(公告)日：2013-05-09
申请号：JP2012210014
申请日：2012-09-24
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： WATANABE MASAHIRO , MASUYAMA MITSUO , HANDA TAKUYA , OKAZAKI KENICHI
IPC分类号： H01L21/336 , H01L21/316 , H01L29/786
CPC分类号： H01L23/564 , H01L29/78606 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses electric characteristic deterioration caused by moisture, and provide a semiconductor device manufacturing method.SOLUTION: A semiconductor device comprises a structure in which a metal oxide layer is positioned in contact with an interlayer insulation layer covering a transistor. The meta oxide layer is composed of a lamination structure including a first metal oxide layer having an amorphous structure, a second metal oxide layer having a polycrystalline structure. The first metal oxide layer having the amorphous structure has no crystal grain boundary and wider grid spacing compared with a crystalline metal oxide layer and likely to trap moisture between grids. The second metal oxide layer having the polycrystalline structure has a dense structure in a crystal part except a crystal grain boundary part and exhibits extremely low moisture permeability. Because of this, moisture invasion to a transistor can be effectively prevented by the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer contacts the interlayer insulation layer.
摘要翻译：要解决的问题：提供抑制由水分导致的电特性劣化的半导体器件，并提供半导体器件制造方法。解决方案：半导体器件包括其中金属氧化物层定位成与覆盖晶体管的层间绝缘层接触的结构。超氧化物层由包括具有非晶结构的第一金属氧化物层，具有多晶结构的第二金属氧化物层的层叠结构构成。与结晶金属氧化物层相比，具有非晶结构的第一金属氧化物层不具有晶界和更宽的栅格间隔，并且可能捕获栅格之间的水分。具有多晶结构的第二金属氧化物层在除了晶界部分以外的晶体部分中具有致密结构，并且具有极低的透湿性。因此，通过包含第一金属氧化物层和第二金属氧化物层的金属氧化物层与层间绝缘层接触的结构，可以有效地防止对晶体管的水分侵入。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2014099599A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014099599A
公开(公告)日：2014-05-29
申请号：JP2013215219
申请日：2013-10-16
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , OKAZAKI KENICHI , MASUYAMA MITSUO , HANDA TAKUYA , WATANABE MASAHIRO , TOKUNAGA HAJIME
IPC分类号： H01L29/786 , G02F1/1368 , G09F9/30 , H01L21/28 , H01L29/417 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1248 , G02F1/1368 , H01L21/70 , H01L27/1052 , H01L27/1225 , H01L29/24 , H01L29/78648 , H01L29/7869 , H01L29/78693 , H01L51/50
摘要： PROBLEM TO BE SOLVED: To provide stable electric characteristics to a transistor using an oxide semiconductor layer; and provide a semiconductor device which has the transistor and which is highly reliable.SOLUTION: A semiconductor device comprises: a multilayer film composed of oxide layers and oxide semiconductor layers; a gate insulation film provided in contact with the oxide layer; and a gate electrode provided on the multilayer film in an overlapping manner via the gate insulation film. The oxide layer includes an element in common with the oxide semiconductor layer and has energy gap larger than that of the oxide semiconductor layer, in which a composition between the oxide layer and the oxide semiconductor layer continuously changes.
摘要翻译：要解决的问题：为使用氧化物半导体层的晶体管提供稳定的电特性; 并提供具有晶体管并且是高可靠性的半导体器件。解决方案：一种半导体器件包括：由氧化物层和氧化物半导体层构成的多层膜; 设置成与所述氧化物层接触的栅极绝缘膜; 以及通过栅极绝缘膜以重叠的方式设置在多层膜上的栅电极。氧化物层包括与氧化物半导体层共同的元素，并且具有大于氧化物半导体层的能隙，其中氧化物层和氧化物半导体层之间的组成不断变化。

3. 发明专利

JP2014195058A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014195058A
公开(公告)日：2014-10-09
申请号：JP2014034495
申请日：2014-02-25
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TOKUNAGA HAJIME , HANDA TAKUYA , OKAZAKI KENICHI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/66742 , H01L29/66969
摘要： PROBLEM TO BE SOLVED: To provide a transistor and the like having high electric field-effect mobility; or provide a transistor and the like having stable electrical characteristics.SOLUTION: A semiconductor device comprises a first oxide semiconductor layer, a second oxide semiconductor layer, a gate insulation film and a gate electrode which are provided to partially overlap one another. The second oxide semiconductor layer is located between the first oxide semiconductor layer and the gate insulation film. The gate insulation film is located between the second oxide semiconductor layer and the gate electrode. The first oxide semiconductor layer has less oxygen deficiency amount than the second oxide semiconductor layer.
摘要翻译：要解决的问题：提供具有高电场效应迁移率的晶体管等; 或提供具有稳定电特性的晶体管等。解决方案：半导体器件包括第一氧化物半导体层，第二氧化物半导体层，栅极绝缘膜和栅电极，其被设置为部分地彼此重叠。第二氧化物半导体层位于第一氧化物半导体层和栅极绝缘膜之间。栅极绝缘膜位于第二氧化物半导体层和栅电极之间。第一氧化物半导体层的氧缺乏量比第二氧化物半导体层少。

4. 发明专利

JP2014007396A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014007396A
公开(公告)日：2014-01-16
申请号：JP2013113668
申请日：2013-05-30
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , OKAZAKI KENICHI , WATANABE MASAHIRO , HANDA TAKUYA
IPC分类号： H01L29/786 , G02F1/1345 , H01L21/336 , H01L51/50 , H05B33/06 , H05B33/08 , H05B33/14
CPC分类号： G09G3/3648 , G09G3/3225 , G09G2300/0439 , G09G2310/08 , H01L27/1225 , H01L27/124
摘要： PROBLEM TO BE SOLVED: To provide a highly-reliable semiconductor device capable of displaying a high-definition image and being manufactured with a high yield and including a transistor which uses an oxide semiconductor.SOLUTION: A semiconductor device comprises: a pixel unit including a plurality of pixels; a gate signal line drive circuit unit; and a source signal line drive circuit unit including a first circuit which controls a sampling timing of a video signal and a second circuit which samples the video signal according to the sampling timing and inputs the signal to a pixel. The second circuit is provided with a plurality of transistors which use an oxide semiconductor layer as a channel formation region. The first circuit and the second circuit are electrically connected by wiring. The wiring is electrically connected to gates of at least two transistors of the plurality of transistors.
摘要翻译：要解决的问题：提供能够显示高清晰度图像并以高产率制造并且包括使用氧化物半导体的晶体管的高可靠性半导体器件。解决方案：一种半导体器件包括：像素单元，包括：多个像素; 门信号线驱动电路单元; 以及源信号线驱动电路单元，其包括控制视频信号的采样定时的第一电路和根据采样定时对视频信号进行采样并将该信号输入到像素的第二电路。第二电路设置有使用氧化物半导体层作为沟道形成区域的多个晶体管。第一电路和第二电路通过布线电连接。布线电连接到多个晶体管的至少两个晶体管的栅极。

5. 发明专利

JP2013065840A Semiconductor device and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013065840A
公开(公告)日：2013-04-11
申请号：JP2012189524
申请日：2012-08-30
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： WATANABE MASAHIRO , MASUYAMA MITSUO , HANDA TAKUYA , OKAZAKI KENICHI , YAMAZAKI SHUNPEI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/28 , H01L21/283 , H01L21/336 , H01L29/423 , H01L29/49 , H01L51/50 , H05B33/02 , H05B33/10
CPC分类号： H01L29/7869 , H01L29/4908 , H01L29/66742 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device with an oxide semiconductor and having stable electrical characteristics, specifically, the semiconductor device with the oxide semiconductor including a gate insulating film with more excellent characteristics, and a method for manufacturing the semiconductor device.SOLUTION: The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, and a source electrode and a drain electrode formed in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.
摘要翻译：要解决的问题：为了提供具有氧化物半导体并具有稳定电特性的半导体器件，具体地说，具有包括具有更优异特性的栅绝缘膜的氧化物半导体的半导体器件，以及用于制造半导体器件的方法。解决方案：半导体器件包括栅电极，形成在栅极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，以及形成为与氧化物半导体膜接触的源电极和漏电极。栅极绝缘膜至少包括形成在氧氮化硅膜上的氧氮化硅膜和氧释放型氧化膜。氧化物半导体膜与氧释放型氧化物膜形成并接触。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2014045173A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014045173A
公开(公告)日：2014-03-13
申请号：JP2013147554
申请日：2013-07-16
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TOKUNAGA HAJIME , HANDA TAKUYA
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L51/50 , H05B33/08 , H05B33/14
CPC分类号： H01L29/78696 , G02F1/1368 , H01L21/02472 , H01L21/02483 , H01L21/02488 , H01L21/02505 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L27/14616 , H01L27/14632 , H01L27/14687 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor which has transistor characteristics with little variation.SOLUTION: The semiconductor device has an insulating film on a conductive film, and an oxide semiconductor film on the insulating film. The oxide semiconductor film has a first oxide semiconductor layer, a second oxide semiconductor layer on the first oxide semiconductor layer, and a third oxide semiconductor layer on the second oxide semiconductor layer. The energy level of a conduction band lower end of the second oxide semiconductor layer is lower than the energy levels of conduction band lower ends of the first and third oxide semiconductor layers. An end of the second oxide semiconductor layer is positioned inside an end of the first oxide semiconductor layer.
摘要翻译：要解决的问题：提供一种使用具有几乎不变化的晶体管特性的氧化物半导体的半导体器件。解决方案：半导体器件在导电膜上具有绝缘膜，在绝缘膜上具有氧化物半导体膜。氧化物半导体膜具有第一氧化物半导体层，第一氧化物半导体层上的第二氧化物半导体层和第二氧化物半导体层上的第三氧化物半导体层。第二氧化物半导体层的导带下端的能级低于第一和第三氧化物半导体层的导带下端的能级。第二氧化物半导体层的一端位于第一氧化物半导体层的端部的内部。

7. 发明专利

JP2013065843A Semiconductor device and method for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013065843A
公开(公告)日：2013-04-11
申请号：JP2012190773
申请日：2012-08-31
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： WATANABE MASAHIRO , MASUYAMA MITSUO , HANDA TAKUYA , OKAZAKI KENICHI
IPC分类号： H01L21/336 , C23C14/08 , G02F1/1368 , G09F9/30 , H01L21/363 , H01L29/786 , H01L51/50 , H05B33/08 , H05B33/14
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/41733 , H01L29/78606
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxide semiconductor and having more stable electrical characteristics and high reliability, and a method for manufacturing the semiconductor device.SOLUTION: The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density higher than or equal to 3.2 g/cm.

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