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1. 发明专利

JP2012203528A Voltage regulator 审中-公开
标题翻译：电压稳压器
公开(公告)号：JP2012203528A
公开(公告)日：2012-10-22
申请号：JP2011065833
申请日：2011-03-24
申请人： Seiko Instruments Inc , セイコーインスツル株式会社
发明人： SUDO MINORU
IPC分类号： G05F1/56
CPC分类号： H02J7/0034 , G05F1/573
摘要： PROBLEM TO BE SOLVED: To provide a voltage regulator through which a large current never flows even if a battery 110 is connected in a positive/negative reversed state.SOLUTION: The voltage regulator employs such a circuit configuration that a substrate potential (n-well) of an output transistor 103 of the voltage regulator is not VDD terminal fixed and a power source of a reference voltage circuit 101 and an error amplifier 102 does not have a VDD terminal fixed.
摘要翻译：要解决的问题：提供一种电压调节器，即使电池110以正/负反向状态连接，大电流也不会流过电压调节器。解决方案：电压调节器采用这样的电路结构，使得电压调节器的输出晶体管103的衬底电位（n阱）不是VDD端子固定的，并且参考电压电路101的电源和误差放大器 102没有固定VDD端子。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011248869A Voltage regulator 有权
标题翻译：电压稳压器
公开(公告)号：JP2011248869A
公开(公告)日：2011-12-08
申请号：JP2011094591
申请日：2011-04-21
申请人： Seiko Instruments Inc , セイコーインスツル株式会社
发明人： SUDO MINORU
IPC分类号： G05F1/56
CPC分类号： G05F1/575
摘要： PROBLEM TO BE SOLVED: To provide a voltage regulator that can be stably operated at a time of a low load in a wide load capacitance range.SOLUTION: A charging circuit for phase compensation capacitance of the voltage regulator is provided. An R1 and a Cz elements are configured to generate a zero point at low frequency.
摘要翻译：要解决的问题：提供在宽负载电容范围内能够在低负载时稳定工作的电压调节器。解决方案：提供电压调节器的相位补偿电容的充电电路。 R1和Cz元件被配置为在低频率处产生零点。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2007060485A Cmos constant current circuit and differential amplifier 审中-公开
标题翻译： CMOS恒流电路和差分放大器
公开(公告)号：JP2007060485A
公开(公告)日：2007-03-08
申请号：JP2005245687
申请日：2005-08-26
申请人： Seiko Instruments Inc , セイコーインスツル株式会社
发明人： SUDO MINORU
IPC分类号： H03F3/34 , H03F1/30 , H03F3/45
摘要： PROBLEM TO BE SOLVED: To provide a CMOS constant current circuit which can be stably operated even at high temperature. SOLUTION: The CMOS constant current circuit is constituted so that a MOS transistor MP10 in which an interval between a gate and a source is short-ciruited is connected to an output edge of the CMOS constant current circuit and it is stably operated using leak current generated in the MOS transistor at high temperature. The CMOS constant current circuit is comprised of a constant current circuit comprised of MOS transistors MP1, MP2, MN1, MN2 and a resistor R2 and a constant current output part comprised of a MOS transistor MP3 and a startup part comprised of S1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供甚至在高温下也能稳定运行的CMOS恒流电路。解决方案：CMOS恒流电路被构造成使得栅极和源极之间的间隔短路的MOS晶体管MP10连接到CMOS恒流电路的输出端，并且其稳定地使用 MOS晶体管在高温下产生的漏电流。 CMOS恒流电路由包括MOS晶体管MP1，MP2，MN1，MN2和电阻R2的恒流电路和由MOS晶体管MP3和由S1构成的启动部分构成的恒流输出部分组成。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006203987A Switching regulator circuit 有权
标题翻译：开关稳压器电路
公开(公告)号：JP2006203987A
公开(公告)日：2006-08-03
申请号：JP2005011235
申请日：2005-01-19
申请人： Seiko Instruments Inc , セイコーインスツル株式会社
发明人： SUDO MINORU
IPC分类号： H02M3/155
CPC分类号： H02M3/1588 , H02M2001/0032 , Y02B70/1466 , Y02B70/16
摘要： PROBLEM TO BE SOLVED: To improve energy conversion of a switching regulator with high efficiency during light load application. SOLUTION: During the light load application, an oscillating frequency of the switching regulator is lowered, and driving capability of the switching element is lowered. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在轻载应用中提高开关稳压器的能量转换效率。
解决方案：在轻载应用中，开关调节器的振荡频率降低，开关元件的驱动能力降低。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2006191781A Charge-pump circuit 有权
标题翻译：充电电路
公开(公告)号：JP2006191781A
公开(公告)日：2006-07-20
申请号：JP2005123501
申请日：2005-04-21
申请人： Seiko Instruments Inc , セイコーインスツル株式会社
发明人： SUDO MINORU
IPC分类号： H02M3/07
CPC分类号： H02M3/073 , G11C5/145 , H01L27/0222 , H01L27/0727 , H03K2217/0018
摘要： PROBLEM TO BE SOLVED: To provide a charge-pump circuit that outputs a high voltage by using a boosting circuit with a smaller number of stages.
SOLUTION: By giving a back-gate voltage for a MOS transistor constituting the charge-pump circuit by a diode, reduction in boosted voltage caused by an increase in the threshold voltage of the MOS transistor is suppressed. In addition, a second MOS transistor is provided between the back gate of the MOS transistor and the ground (GND) so that in-phase clock signals are inputted to the gate of the second MOS transistor and the capacitor thereof.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供通过使用具有较少级数的升压电路输出高电压的电荷泵电路。解决方案：通过由二极管为构成电荷泵电路的MOS晶体管提供背栅电压，抑制由MOS晶体管的阈值电压的增加引起的升压电压的降低。此外，在MOS晶体管的背栅极和地（GND）之间设置第二MOS晶体管，使得同相时钟信号被输入到第二MOS晶体管的栅极及其电容器。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005354888A Power generation circuit using electric waves 有权
标题翻译：使用电波的发电电路
公开(公告)号：JP2005354888A
公开(公告)日：2005-12-22
申请号：JP2005122007
申请日：2005-04-20
申请人： Makoto Ishida , Seiko Instruments Inc , セイコーインスツル株式会社 , 誠石田
发明人： ISHIDA MAKOTO , SAWADA KAZUAKI , TAKAO HIDEKUNI , SUDO MINORU
IPC分类号： H02J7/00 , H02H7/00 , H02J17/00 , H02M7/06
CPC分类号： H02M7/04 , H02J17/00
摘要： PROBLEM TO BE SOLVED: To provide a power generation circuit using an electric wave which does not require special energy.
SOLUTION: Power is generated utilizing the electric wave existing within a living space. The circuit comprises an antenna or a coil for receiving the electric wave, a rectification circuit formed on a silicon substrate to rectify a signal from the antenna or the coil, and a circuit which accumulates electricity of an output of the rectifying circuit. The electric waves are a commercial electric waves in the circuit generating the power using energy of the electric waves.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供使用不需要特殊能量的电波的发电电路。解决方案：利用存在于生活空间内的电波产生电力。电路包括用于接收电波的天线或线圈，形成在硅衬底上以整流来自天线或线圈的信号的整流电路，以及积聚整流电路的输出电力的电路。电波是使用电波能量产生电力的电路中的商业电波。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005294419A Electronic circuit device with silicon substrate 有权
标题翻译：具有硅衬底的电子电路器件
公开(公告)号：JP2005294419A
公开(公告)日：2005-10-20
申请号：JP2004105220
申请日：2004-03-31
申请人： Makoto Ishida , Seiko Instruments Inc , セイコーインスツル株式会社 , 誠石田
发明人： ISHIDA MAKOTO , SAWADA KAZUAKI , TAKAO HIDEKUNI , SUDO MINORU
IPC分类号： H01L25/00 , B81B7/00 , G01P15/00 , H01L21/335 , H01L23/29 , H01L23/52 , H01L25/04 , H01L25/065 , H01L25/07 , H01L25/16 , H01L25/18 , H01L29/06 , H01L29/84
CPC分类号： H01L25/16 , H01L29/0657 , H01L2224/16 , H01L2924/1461 , H01L2924/19104 , H01L2924/3011 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an electronic circuit having a silicon substrate wherein a compact, high-performance passive element or sensor is incorporated. SOLUTION: The electronic circuit device is comprised of a silicon substrate that includes a semiconductor device and wherein a recessed part is formed and at least one passive element that is formed by another process different from a silicon planer process for forming the semiconductor device. It is provided with a silicon substrate that electrically connects the semiconductor device, wherein the passive element is embedded in the recessed part of the silicon substrate and that is formed in the silicon substrate with the passive element. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有硅衬底的电子电路，其中结合有紧凑的，高性能的无源元件或传感器。解决方案：电子电路器件由包括半导体器件的硅衬底组成，并且其中形成有凹部，并且至少一个无源元件由不同于用于形成半导体器件的硅平面工艺的另一工艺形成。其设置有电连接半导体器件的硅衬底，其中无源元件嵌入在硅衬底的凹陷部分中，并且在硅衬底中形成有无源元件。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005070010A Inertia force sensor having through hole 审中-公开
标题翻译：具有通孔的INERTIA力传感器
公开(公告)号：JP2005070010A
公开(公告)日：2005-03-17
申请号：JP2003304005
申请日：2003-08-28
申请人： Seiko Instruments Inc , セイコーインスツル株式会社
发明人： MAENAKA KAZUSUKE , SUDO MINORU , KATO KENJI , SHODA MITSUO
IPC分类号： G01P15/08 , H01L29/84
摘要： PROBLEM TO BE SOLVED: To surely connect a sensor element to a wiring cable with high productivity, in a semiconductor inertia force sensor.
SOLUTION: A through hole is provided in an insulation substrate for lining a semiconductor substrate constituting the inertia force sensor, the first metal is spattered onto the through hole when connecting the wiring cable to a contact on the semiconductor substrate through the through hole, the second metal is arranged further under a wafer condition, and is heated to be formed into molten alloy, so as to provide the connection free from contact failure between the wiring cable and the contact, with high efficiency.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在半导体惯性力传感器中，确保以高生产率将传感器元件连接到布线电缆。解决方案：在构成惯性力传感器的半导体衬底衬里的绝缘衬底中设置通孔，当通过通孔将布线电缆连接到半导体衬底上的接触件时，第一金属溅到通孔上，第二金属进一步配置在晶片状态下，被加热成为熔融合金，从而以高效率提供布线电缆和触点之间没有接触故障的连接。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004361394A Capacitive dynamical amount sensor 审中-公开
公开(公告)号：JP2004361394A
公开(公告)日：2004-12-24
申请号：JP2004130793
申请日：2004-04-27
申请人： Seiko Instruments Inc , セイコーインスツル株式会社
发明人： SHODA MITSUO , SUDO MINORU , KATO KENJI
IPC分类号： B81B7/00 , G01C19/56 , G01P15/08 , G01P15/125 , G01R27/26 , H01G5/04
CPC分类号： H01G5/04 , B81B7/0006 , B81C2203/0109 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/084 , G01R27/2605
摘要： PROBLEM TO BE SOLVED: To provide a capacitive dynamical amount sensor which is low in cost and small in size.
SOLUTION: The sensor comprises a capacity detection electrode which is mounted on a lower glass plate is conducted electrically into an outer surface of an upper glass plate, by means of a through-hole and soft solder ball mounted on the upper glass plate; the electrodes connecting to an external substrate are collected on the outer surface of the upper glass plate so as to be mounted directly to the external substrate.
COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2015005054A ボルテージレギュレータ审中-公开
标题翻译：电压稳压器
公开(公告)号：JP2015005054A
公开(公告)日：2015-01-08
申请号：JP2013128906
申请日：2013-06-19
申请人：セイコーインスツル株式会社 , Seiko Instruments Inc
发明人： FUJIMURA MANABU , SUDO MINORU
IPC分类号： G05F1/56
CPC分类号： H02M3/158 , G05F1/56 , G05F1/575
摘要：【課題】位相補償回路の容量に、単位面積あたりの容量値が大きい、酸化膜厚が薄い容量を使用することができる、ボルテージレギュレータを提供する。【解決手段】位相補償回路の容量109の両端に掛かる電圧が所定値以上にならないように制限する電圧制限回路200を、容量109と並列に備えた。【選択図】図1
摘要翻译：要解决的问题：提供一种电压调节器，其能够使用具有每单位面积的大的电容值的电容和薄的氧化膜厚度作为相位补偿电路的电容。解决方案：电压限制器电路200，用于将电压施加到相位补偿电路的电容109的两端，使得电压不超过预定值，平行于电容109设置。

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