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1. 发明专利

JP2011080095A Catalytic cvd device, method for formation of film, process for production of solar cell, and substrate holder 有权
标题翻译：催化CVD装置，膜的形成方法，太阳能电池的制造方法以及基板保持件
公开(公告)号：JP2011080095A
公开(公告)日：2011-04-21
申请号：JP2009230589
申请日：2009-10-02
申请人： Sanyo Electric Co Ltd , Ulvac Japan Ltd , 三洋電機株式会社 , 株式会社アルバック
发明人： SHIMA MASAKI , WAKAMIYA TOSHINORI , OSONO SHUJI , OKAYAMA TOMOHIKO , OGATA HIDEYUKI
IPC分类号： C23C16/44 , C23C16/24 , H01L21/205
CPC分类号： C23C16/44 , C23C16/24 , C23C16/325 , C23C16/345 , C23C16/4404 , C23C16/481 , H01L21/68757
摘要： PROBLEM TO BE SOLVED: To provide a catalytic CVD device, a method for formation of a film, a process for production of a solar cell, and a substrate holder.
SOLUTION: In the catalytic CVD device 100, the holder 300 has an antireflective structure for preventing the reflection of a radiant ray ejected from a catalyst wire 11 toward the side of a substrate 200.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供催化CVD装置，膜的形成方法，太阳能电池的制造方法和基板保持件。解决方案：在催化CVD装置100中，保持器300具有防反射结构，用于防止从催化剂丝11向衬底200的侧面喷射的辐射线的反射。版权所有（C）2011 ，JPO＆INPIT

2. 发明专利

JP2011082207A Catalytic chemical vapor deposition apparatus 有权
标题翻译：催化化学蒸气沉积装置
公开(公告)号：JP2011082207A
公开(公告)日：2011-04-21
申请号：JP2009230697
申请日：2009-10-02
申请人： Sanyo Electric Co Ltd , Ulvac Japan Ltd , 三洋電機株式会社 , 株式会社アルバック
发明人： OSONO SHUJI , OKAYAMA TOMOHIKO , OGATA HIDEYUKI , ONO MASAYOSHI , SHIMA MASAKI
IPC分类号： H01L21/31 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a catalytic chemical vapor deposition apparatus, which secures excellent film quality and a film forming speed and secures uniformity in film thickness while suppressing twisting and vibration of a catalyst line to stabilize the catalyst line and, and is effective, especially, for forming a film in a large-area film formation region.
SOLUTION: The catalyst line heat generating circuit includes a vacuum chamber 3, a holder 1 for holding a substrate S, catalyst lines 6, and an AC power supply device 8. Each catalyst line 6 is ≥2 m long and droops vertically in a reaction chamber 2 and is suspended in the vacuum chamber 3 to be returned in a perpendicular direction in a lower region in the reaction chamber 2. An interval between a substrate and the catalyst line is 60 to 200 mm. Consequently, the excellent film quality and film forming speed can be secured. Further, an electric power applies an AC voltage to the catalyst line to suppress twisting and vibration of the catalyst line.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种催化化学气相沉积装置，其确保了优异的膜质量和成膜速度，并且在抑制催化剂管线的扭转和振动以稳定催化剂管线的同时确保膜厚度的均匀性，并且特别是在大面积成膜区域中形成膜是有效的。催化剂管线发热电路包括真空室3，用于保持基板S的保持器1，催化剂管线6和交流电源装置8.每个催化剂管线6长度≥2m，垂直下垂在反应室2中并悬浮在真空室3中，以在反应室2的下部区域中沿垂直方向返回。基板和催化剂管线之间的间隔为60-200mm。因此，可以确保优异的膜质量和成膜速度。此外，电力向催化剂管线施加AC电压以抑制催化剂管线的扭转和振动。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011082198A Catalytic cvd device, film forming method and solar cell manufacturing method 有权
标题翻译：催化CVD装置，膜形成方法和太阳能电池制造方法
公开(公告)号：JP2011082198A
公开(公告)日：2011-04-21
申请号：JP2009230598
申请日：2009-10-02
申请人： Sanyo Electric Co Ltd , Ulvac Japan Ltd , 三洋電機株式会社 , 株式会社アルバック
发明人： KAI MIKIHIDE , OSONO SHUJI , OKAYAMA TOMOHIKO , OGATA HIDEYUKI
IPC分类号： H01L21/205 , C23C16/44 , H01L31/04
CPC分类号： C23C16/4488 , C23C16/24 , C23C16/44 , H01L21/02422 , H01L21/02532 , H01L21/02592
摘要： PROBLEM TO BE SOLVED: To provide a catalytic CVD device, along with a film forming method and a solar cell manufacturing method, capable of prolonging the service life of a catalyst wire.
SOLUTION: In the catalytic CVD device 100, a control unit controls the temperature of the catalyst wire 13 to a standby temperature for a prescribed amount of time before and after a film is formed. The standby temperature is lower than the temperature of the catalyst wire 13 when the film is being formed, and is a prescribed temperature higher than room temperature.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供催化CVD装置以及能够延长催化剂丝的使用寿命的成膜方法和太阳能电池制造方法。解决方案：在催化CVD装置100中，控制单元在形成膜之前和之后将催化剂丝13的温度控制到待机温度达预定时间。备用温度低于催化剂线13的温度时，成膜时为规定温度以上。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011082226A Catalytic chemical vapor deposition device 有权
标题翻译：催化化学气相沉积装置
公开(公告)号：JP2011082226A
公开(公告)日：2011-04-21
申请号：JP2009230949
申请日：2009-10-02
申请人： Sanyo Electric Co Ltd , Ulvac Japan Ltd , 三洋電機株式会社 , 株式会社アルバック
发明人： OSONO SHUJI , OKAYAMA TOMOHIKO , OGATA HIDEYUKI , OKANO SHUICHI , SHIMA MASAKI
IPC分类号： H01L21/31 , C23C16/44 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a catalytic chemical vapor deposition device that can form a film with desired precision while suppressing twisting of a catalyst line suspended in a chamber to be folded back in a vertical direction, especially, a catalytic chemical vapor deposition device which is effective for forming the film in a film formation region of large area.
SOLUTION: When the catalyst line 6 is twisted clockwise on a Z axis, a folded-back part 63 leaves columnar parts 30b and 30c and rotates around the Z axis in a direction as shown by an arrow in the figure so as to approach the columnar parts 30a and 30b. An end of the folded-back part 63, having rotated, on the side of a droop part 61 abuts against the columnar part 30a, and an end on the side of a droop part 62 abuts against the columnar part 30d to restrict the twisting of the catalyst line 6 in a Y-axial direction. At this time, the droop pat 62 leaves a flat plate part 20 and the droop part 61 shifts in position to approach the flat plate part 20. The droop part 61 of the catalyst line 6 which has shifted in position abuts against an end 21c of the flat plate part 20 to restrict the position shift of the catalyst line 6 in an X-axial direction.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种催化化学气相沉积装置，其可以以期望的精度形成膜，同时抑制悬浮在室中的催化剂管线在垂直方向上的折叠，特别是催化化学蒸气在大面积的成膜区域中有效地形成膜的沉积装置。解决方案：当催化剂管线6在Z轴上顺时针扭转时，折回部分63离开柱形部分30b和30c，并沿Z轴方向如图中箭头所示的方向旋转，以便接近柱状部分30a和30b。已经在下垂部分61侧旋转的折回部分63的端部抵靠柱状部分30a，并且下垂部分62侧的端部抵靠柱状部分30d以限制扭转部分催化剂管线6处于Y轴方向。此时，下垂板62离开平板部分20，并且下垂部分61移动到位置以接近平板部分20.已经移动位置的催化剂管线6的下垂部分61抵靠在平板部分20的端部21c上平板部20，以限制催化剂线6在X轴方向的位置偏移。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011082199A Film forming method, solar cell manufacturing method, and catalytic cvd device 有权
标题翻译：薄膜成型方法，太阳能电池制造方法和催化CVD装置
公开(公告)号：JP2011082199A
公开(公告)日：2011-04-21
申请号：JP2009230599
申请日：2009-10-02
申请人： Sanyo Electric Co Ltd , Ulvac Japan Ltd , 三洋電機株式会社 , 株式会社アルバック
发明人： KAI MIKIHIDE , OSONO SHUJI , OKAYAMA TOMOHIKO , OGATA HIDEYUKI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a method of operating a catalytic CVD device, along with a film forming method by a catalytic CVD method using the device and a solar cell manufacturing method, capable of prolonging the service life of a catalyst wire.
SOLUTION: Concerning a method of energizing the catalyst wire in forming a film using the catalytic CVD device, energization control to the catalyst wire is executed by constant current control when temperature rise is started and by constant power control in deposition, thereby preventing deterioration of the catalyst wire due to overheating to prolong the service life. Further, abnormal temperature rise of a substrate due to overheating of the catalyst wire in the deposition is avoided to prevent abnormal conditions of film quality.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种操作催化CVD装置的方法，以及通过使用该装置的催化CVD法和太阳能电池制造方法的成膜方法，能够延长催化剂丝的使用寿命。解决方案：关于使用催化CVD装置在形成膜时使催化剂丝通电的方法，当开始温度启动时通过恒定电流控制并且通过沉积中的恒定功率控制来执行对催化剂丝的通电控制，从而防止由于过热导致催化剂丝变质，延长了使用寿命。此外，避免了由于沉积中的催化剂丝的过热导致的基板的异常升温，以防止膜质量的异常状况。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011082201A Catalytic chemical vapor deposition apparatus 有权
标题翻译：催化化学蒸气沉积装置
公开(公告)号：JP2011082201A
公开(公告)日：2011-04-21
申请号：JP2009230652
申请日：2009-10-02
申请人： Sanyo Electric Co Ltd , Ulvac Japan Ltd , 三洋電機株式会社 , 株式会社アルバック
发明人： OSONO SHUJI , OKAYAMA TOMOHIKO , OGATA HIDEYUKI , TAKAHAMA TAKESHI , SHIMA MASAKI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a catalytic chemical vapor deposition apparatus capable of suppressing a discharge from a catalyst line or a connection terminal connected to the catalyst line even when a large current is supplied through the catalyst line.
SOLUTION: The catalyst line heat generating circuit 20 which includes the catalyst line 6, the connection terminal 12, and a power supply circuit 8 is provided so as to become in an electric floating state with respect to a grounded vacuum chamber 3. If a potential of the catalyst line heat generating circuit 20 is a ground potential, it is worried that when electric power is applied to the catalyst line 6, a discharge from the catalyst line 6 or connection terminal 12 is generated toward an external wall inner surface etc., of the vacuum chamber 3. The catalyst line heat generating circuit 20, however, is in the floating state, so its potential is never the ground potential and even when a large current is supplied by the power supply circuit 8 to the catalyst line 6, the discharge from the catalyst line 6 or connection terminal 12 can be suppressed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供即使当通过催化剂线供应大电流时，也能够抑制从催化剂管线或与催化剂管线连接的连接端子的排出的催化化学气相沉积装置。解决方案：包括催化剂管线6，连接端子12和电源电路8的催化剂生成线生成电路20被设置为相对于接地真空室3变成电浮动状态。如果催化剂生成线生成电路20的电位为接地电位，则担心当向催化剂管线6施加电力时，向外壁内表面产生从催化剂管线6或连接端子12的排出然而，催化剂管线热产生电路20处于浮置状态，因此其电位永远不是地电位，并且即使当电源电路8向催化剂提供大的电流时线6，可以抑制从催化剂管线6或连接端子12的排出。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2012064919A Method for processing energization heating wire 有权
标题翻译：加热加热线的方法
公开(公告)号：JP2012064919A
公开(公告)日：2012-03-29
申请号：JP2011094006
申请日：2011-04-20
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , TAMARU YOSHIHISA , YAMADA KIICHI , OGATA HIDEYUKI , SAITO KAZUYA
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an energization heating wire which does not extend by heat and is excellent in durability; a method for manufacturing the energization heating wire; and a vacuum processing apparatus using the energization heating wire.SOLUTION: The energization heating wire (TaBN wire 20) has a first layer 21 made from a tantalum nitride wire and a second layer 22 which coats a surface of the first layer 21 and is made from boride, for instance. That is, the second layer coats the surface of the tantalum nitride wire having high strength and less deformation, thereby, nitrogen removal from the tantalum nitride wire can be suppressed under a high temperature environment, and the energization heating wire can be used as an energization heating wire having extremely high durability. The vacuum processing apparatus using such a TaBN wire 20 can reduce cost, improve productivity, and simultaneously be expected to stabilize film quality when a film is formed on a substrate.
摘要翻译：要解决的问题：提供一种不会被热延伸并且耐久性优异的通电加热丝; 一种用于制造通电加热丝的方法; 以及使用通电用加热丝的真空处理装置。
解决方案：通电加热线（TaBN线20）具有由氮化钽线制成的第一层21和涂覆第一层21的表面并由硼化物制成的第二层22。也就是说，第二层涂覆了具有高强度和较小变形的氮化钽丝的表面，从而可以在高温环境下抑制氮化钽丝脱氮，并且通电加热丝可以用作通电加热丝具有极高的耐久性。使用这种TaBN线20的真空处理装置可以降低成本，提高生产率，并且同时可以期望当在基板上形成膜时使膜质量稳定。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012041576A Energization heating wire, film forming apparatus, and method for producing energization heating wire 有权
标题翻译：能量加热线，成膜装置和生产加热加热线的方法
公开(公告)号：JP2012041576A
公开(公告)日：2012-03-01
申请号：JP2010181706
申请日：2010-08-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , TAMARU YOSHIHISA , YAMADA KIICHI , OGATA HIDEYUKI , SAITO KAZUYA
IPC分类号： C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an energization heating wire having high durability and low electrical resistance, a film forming apparatus using the energization heating wire, and a method for producing the energization heating wire.SOLUTION: The energization heating wire 6 has a core part 6a and a peripheral edge part 6b. The core part 6a is linear and is made of tantalum. The peripheral edge part 6b is made of tantalum carbide and covers the core part 6a. The energization heating wire 6 has high thermal and mechanical endurance because in the energization heating wire 6, the core part 6a made of metallic tantalum is covered with the peripheral edge part 6b made of tantalum carbide having high creep strength and high mechanical strength at high temperatures. Further, the energization heating wire 6 has high conductivity and can be heated with an applied voltage comparable to an energization heating wire made only of metallic tantalum because a large portion of the cross-sectional structure of the energization heating wire 6 is the core part 6a made of metallic tantalum.
摘要翻译：要解决的问题：提供一种具有高耐久性和低电阻的通电加热丝，使用通电加热丝的成膜装置和用于产生通电加热丝的方法。
解决方案：通电加热丝6具有芯部6a和周缘部6b。芯部6a是线性的并且由钽制成。周缘部6b由碳化钽制成并覆盖芯部6a。通电加热线6具有高的热机械耐久性，因为在通电加热丝6中，由金属钽制成的芯部6a被在高温下具有高蠕变强度和高机械强度的碳化钽制成的周缘部6b覆盖。此外，通电加热丝6具有高导电性，并且可以以与由金属钽制成的通电加热线相当的施加电压进行加热，因为通电加热丝6的截面结构的大部分是芯部6a 由金属钽制成。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2013209675A Film forming apparatus 审中-公开
标题翻译：电影制作装置
公开(公告)号：JP2013209675A
公开(公告)日：2013-10-10
申请号：JP2010164532
申请日：2010-07-22
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , SAITO KAZUYA
IPC分类号： C23C16/44
CPC分类号： C23C16/545 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a film forming apparatus which can continuously form a film without causing thermal deformation of a film-shaped base material.SOLUTION: A film forming apparatus 1 includes a chamber 10, a cooling roller 13, a gas supply source 16, and a plurality of catalytic wires 17. The cooling roller 13 is rotated about a rotation axis 13a to thereby convey a film-shaped base material F wound around an outer peripheral surface 13b inside the chamber 10 while cooling it. The gas supply source 16 supplies a source gas to the base material F wound around the outer peripheral surface 13b, and is disposed facing toward the outer peripheral surface 13b. The plurality of catalytic wires 17 are installed between the outer peripheral surface 13b and the gas supply source 16 and can be heated to the decomposition temperature of the source gas. As a result, a film can be continuously formed on the base material F while the base material F is protected from the heat of the catalytic wires 17.
摘要翻译：要解决的问题：提供一种可以连续地形成膜而不引起膜状基材的热变形的成膜设备。溶液：成膜设备1包括室10，冷却辊13，气体供应源 16和多根催化丝17.冷却辊13围绕旋转轴线13a旋转，从而在冷却时输送卷绕在室10内的外周面13b上的薄膜状基材F. 气体供给源16向围绕外周面13b的基材F供给源气体，并且配置成朝向外周面13b。多个催化丝17安装在外周面13b和气体供给源16之间，并且可以被加热到源气体的分解温度。结果，可以在基材F上连续地形成膜，同时保护基材F不受催化丝17的热量的影响。

10. 发明专利

JP2009280915A Catalyst cvd apparatus 有权
标题翻译：催化剂CVD装置
公开(公告)号：JP2009280915A
公开(公告)日：2009-12-03
申请号：JP2009163687
申请日：2009-07-10
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , ASARI SHIN , SAITO KAZUYA , TSUBOI HIDEO , ANDO NOBUHIRO , OKAYAMA TOMOHIKO
IPC分类号： C23C16/44 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a catalyst CVD apparatus where, even in a constitution where substrates are vertically held or a constitution where substrates are horizontally arranged, deposition species produced by activation or decomposition can be uniformly deposited inside the substrate faces. SOLUTION: The back faces on the sides reverse to the substrate holding faces of substrate holders 5a, 5b are provided with storage vessels 8a, 8, a plurality of gas jet holes 7 are formed so as to penetrate the space between the back face of each substrate holder and the substrate holding face, reaction gas is introduced from the gas introduction system into the reaction gas storage vessels, the reaction gas stored in the reaction gas storage vessels is jetted from the gas jet holes to a catalyst body 3 so as to be deposition species, the deposition species is deposited on the substrates 6 provided on the substrate holders, and the volume of the reaction gas storage vessels 8a, 8b is made variable. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种催化剂CVD装置，其中即使在基板垂直保持的构造或其中基板被水平布置的构造的情况下，也可以在基板面内均匀地沉积通过激活或分解产生的沉积物质。解决方案：与衬底保持器5a，5b的衬底保持面相反的一侧的背面设置有存储容器8a，8，多个气体喷射孔7形成为穿透背部之间的空间每个基板保持器和基板保持面的表面，将反应气体从气体导入系统引入到反应气体存储容器中，将存储在反应气体存储容器中的反应气体从气体喷射孔喷射到催化剂体3，从而作为沉积物质，沉积物质沉积在设置在基板保持器上的基板6上，并且使反应气体存储容器8a，8b的体积可变。版权所有（C）2010，JPO＆INPIT

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