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1. 发明专利

JPH0992626A WAFER BOAT FOR HEAT TREATMENT 失效
公开(公告)号：JPH0992626A
公开(公告)日：1997-04-04
申请号：JP24333495
申请日：1995-09-21
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MARUCHIN SHIYUREMUZU , YAMAMOTO AKITO , MIKATA YUICHI , YAMAGA KENICHI , NISHI KATSUO
IPC分类号： H01L21/22 , H01L21/205 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To eliminate the nonuniformity of temperature within a wafer due to boat rod effect. SOLUTION: A support tray 16 is mounted to a support rod 14. With the support tray 16, an upper surface of the annular support tray 16 (a surface where a wafer 15 is mounted) is flat except one portion. A recess 18a is formed on the upper surface of the support tray 16 near the support rod 14. A wafer 15 does not contact the support tray 16 in the recess 18a, thus causing the total heat content of the support rod 14 and the support tray 16 in circumferential direction of the wafer 15 to be nearly equal and hence contributing to the uniformity of the temperature distribution of the wafer 15.

2. 发明专利

JPH0992656A WAFER HOLDER IN HIGH-SPEED HEAT TREATMENT AND HEAT TREATMENT METHOD 失效
公开(公告)号：JPH0992656A
公开(公告)日：1997-04-04
申请号：JP24333295
申请日：1995-09-21
申请人： TOSHIBA CORP
发明人： MARUCHIN SHIYUREMUZU
IPC分类号： H01L21/683 , H01L21/324 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder in a high-speed heat treatment with a uniform gas flow and a high ramp rate. SOLUTION: Three bar-shaped supporting members 20 are mounted at the point of cylindrical pole member 19 using a joining member 21. A plate 22 is supported by the bar-shaped supporting members 20. Heat radiation is not transmitted in the plate 22 and the plate 22 has a large radiation ratio and a large absorption factor of heat radiation. A supporting pole member 12 is provided in the pole member 19, and three bar-shaped supporting members 13 are mounted on the top of the supporting pole member 12, while a ring- shaped tray 14 is mounted on the bar-shaped supporting member 13. A wafer 15 is mounted on the tray 14. The face of the wafer 15 and the face of the plate 22 are put in parallel. When the wafer 15 is at a low temperature, the wafer 15 is put in contact with the plate 22, and when the temperature of the wafer 15 is over a given level, the wafer 15 is removed from the plate 22. Then, a process gas is fed thereto.

3. 发明专利

JPH09237789A SHIELDING BODY AS WELL AS APPARATUS AND METHOD FOR HEAT TREATMENT 失效
公开(公告)号：JPH09237789A
公开(公告)日：1997-09-09
申请号：JP4364896
申请日：1996-02-29
申请人： TOSHIBA CORP
发明人： MARUCHIN SHIYUREMUZU , OMINE TOSHIMITSU
IPC分类号： H01L21/22 , H01L21/00 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To restrain the difference in a temperature between the end part and the surface part of a substrate from being expanded by a method wherein an annular shielding body is installed between the substrate and a heater. SOLUTION: A substrate 1 is placed on a substrate holding body 2, the substrate holding body 2 is raised by a drive means 5, a resistance heater 4 is brought close to the substrate 1, and the temperature of the substrate 1 is raised quickly. In addition, the substrate 1 is held in a state that it is brought close to the resistance heater 4, and the temperature of the substrate 1 is held constant. In addition, the substrate holding body 2 is lowered by the drive means 5, the substrate 1 is moved away from the resistance heater 4, and the temperature of the substrate 1 is cooled quickly. Then, a shielding body 6 is installed at the substrate holding body 2 so as to surround the substrate 1 in an annular shape. As a material for the shielding body 6, quartz, SiC or the like which absorbes heat radiation well is used. Therefore, it is possible to prevent only the end part of the substrate 1 from being heated and to enhance the in-plane uniformity of the temperature of the substrate 1.

4. 发明专利

JPH07254591A HEAT TREATMENT EQUIPMENT 失效
公开(公告)号：JPH07254591A
公开(公告)日：1995-10-03
申请号：JP4460894
申请日：1994-03-16
申请人： TOSHIBA CORP
发明人： MARUCHIN SHIYUREMUZU
IPC分类号： H01L21/22 , C23C16/46 , C30B25/12 , H01L21/205 , H01L21/31 , H01L21/673
摘要： PURPOSE:To make the temperature distribution in the planes of heat-treated substrates even by holding a plurality of heat-treated substrates placed in a heating chamber parallel mutually and providing between them a heat transmission member which transmits the heat radiation to the center when the temperature is raised and absorbs heat from the center and emits it outside the substrate when the temperature is lowered. CONSTITUTION:This equipment is provided with a longitudinal cylinder-shaped heating pipe 11 which demarkates a heating chamber 10 into which specified gas is introduced, a heater 14 which, being located outside the heating chamber 10, raises and loweres the temperature, boards 13 which hold a plurality of semiconductor wafers 12 located in the heating chamber 10 parallel mutually, and heat transmission members 12, each of which is inserted between the semiconductor wafers 12 and which absorbs the heat radiation of the heater 14 and transmits heat to the center of the semiconductor wafer 12 when the temperature is raised and emits heat outside the semiconductor wafer 12 when the temperature is lowered. Furthermore, since an inactive gas introducing pipe 15 which introduces inactive gas such as argon and nitrogen and a gas exhaust pipe 16 which exhausts gas out of the heating chamber 10 are connected to the equipment, the center of the wafers can be heated well as the external part and therefore the temperature distribution can be made even in the planes of the wafers.

5. 发明专利

JPH07326593A METHOD AND DEVICE FOR HEAT TREATMENT 失效
公开(公告)号：JPH07326593A
公开(公告)日：1995-12-12
申请号：JP12086894
申请日：1994-06-02
申请人： TOSHIBA CORP
发明人： MARUCHIN SHIYUREMUZU
IPC分类号： H01L21/22 , H01L21/324
摘要： PURPOSE:To realize uniform in-plane temperature distribution of a heat treatment substrate simultaneously without lowering the number of heat treatment substrates to be treated at a time and without increasing a delay time. CONSTITUTION:The device is constituted of a heating chamber whereto specified gas is introduced, a heater which is installed in a periphery of the heating chamber and enables temperature rise and temperature lowering and a jig 30 for supporting a plurality of heat treatment substrates 12 arranged inside the heating chamber parallel mutually, and the jig 30 is positioned in a peripheral part of the thermal treatment substrate 12 and is provided with a reflection means 34 for reflecting radiant heat injected thereto or radiant heat emitted therefrom.

6. 发明专利

JPH07321059A DEVICE AND METHOD FOR HEAT TREATMENT 失效
公开(公告)号：JPH07321059A
公开(公告)日：1995-12-08
申请号：JP10943894
申请日：1994-05-24
申请人： TOSHIBA CORP
发明人： MARUCHIN SHIYUREMUZU
IPC分类号： H01L21/22 , H01L21/31 , H01L21/324
摘要： PURPOSE:To provide a heat-treating device which improves a heat-up and cooling-down speed while reducing a stress, which is applied to a substrate, and a method of heat-treating. CONSTITUTION:A heat-treating device is provided with a substrate holding means 11 for holding a substrate 9 to be heat-treated, a heat source 6 arranged at a prescribed interval between the means 11 and the source 6, a reflective plate 1 for making radiant heat, which is radiated from the heat source 6, reflect toward the substrate 9 and a first moving means 3 for moving the plate 1 and the plate 1 is moved by the means 3 to adjust the amount of the radiant heat to reach the substrate 9, whereby the heat-treating temperature of the substrate 9 is adjusted.

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