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1. 发明专利

JP2007189198A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2007189198A
公开(公告)日：2007-07-26
申请号：JP2006310623
申请日：2006-11-16
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： OKADA KAZUHISA , KITAGAWA KATSUHIKO , NOMA TAKASHI , OTSUKA SHIGEKI , YAMADA KOJI , ISHIBE SHINZO , MORITA YUICHI , OKUBO NOBORU , SHINOKI HIROYUKI , OKIKAWA MITSURU
IPC分类号： H01L31/02 , H01L21/3205 , H01L23/52 , H01L27/14
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an outputted image.
SOLUTION: A reflection layer 8 is formed between a light receiving element 1 and a wiring layer 10 for reflecting an infrared ray toward a light receiving element 1, without transmitting it to the wiring layer 10. The infrared ray enters from a light transparent substrate 6 toward the wiring layer 10 through a semiconductor substrate 2. The reflection layer 8 may also be formed at least in a region under the light receiving element 1 uniformly, or only under the light receiving element 1. Alternatively, instead of the reflection layer 8, an anti-reflection layer 30 having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种解决在输出图像上形成在半导体衬底的背面上的布线的图案的反射问题的半导体器件。解决方案：在光接收元件1和用于将红外线反射到光接收元件1的布线层10之间形成反射层8，而不将其传输到布线层10.红外线从光线透明基板6通过半导体基板2朝向布线层10.反射层8也可以至少在光接收元件1的下方的区域内均匀地形成，或者仅形成在光接收元件1的下方。或者，代替反射可以形成具有吸收入射红外线以防止透射的功能的防反射层30。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2007324440A Solid-state imaging apparatus 审中-公开
标题翻译：固态成像装置
公开(公告)号：JP2007324440A
公开(公告)日：2007-12-13
申请号：JP2006154346
申请日：2006-06-02
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： OKIKAWA MITSURU
IPC分类号： H01L27/148 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/3725
摘要： PROBLEM TO BE SOLVED: To improve an image quality by symmetrizing the properties of pixels in left-right direction, upper-lower direction or left-right, and upper-lower direction of an imaging part with a solid-state imaging device.
SOLUTION: A solid-state imaging apparatus constitutes light-receiving pixels such that left-right and upper-lower of an imaging part become symmetric with respect to a manner in which a light is incident. For example, a forming pattern of a projection 50 is projected in the horizontal direction along a light-receiving pixels bound from a clock wiring 46 disposed on a channel stop 42 separating perpendicular CCD shift resistors of an imaging part of a frame transferring-type CCD image sensor, and is symmetrized in the upper-lower and right-left directions relative to a center 52 of the imaging part.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过使用固态成像装置对成像部件的左右方向，上下方向或左右方向以及上下方向的像素的性质进行对称来提高图像质量。解决方案：固态成像装置构成光接收像素，使得成像部件的左上和下下相对于光入射的方式变为对称。例如，突起50的形成图案沿着从设置在帧传送型CCD的成像部分的垂直CCD移位电阻器的通道停止器42上的时钟布线46所限定的受光像素投影图像传感器，并且相对于成像部件的中心52在上下左右方向上对称化。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2005109451A Solid state imaging device 审中-公开
标题翻译：固态成像装置
公开(公告)号：JP2005109451A
公开(公告)日：2005-04-21
申请号：JP2004256523
申请日：2004-09-03
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： SHIMIZU TATSU , OKIKAWA MITSURU , MIWA TETSUYA , NAKAJIMA ISATO
IPC分类号： G02B3/00 , H01L27/14 , H04N5/335 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of increasing sensitivity characteristics even near the edge of a light reception region.
SOLUTION: The solid state imaging device comprises a light reception section 5 formed on a semiconductor substrate 4; a light reception region formed on the semiconductor substrate 4 by a plurality of light reception sections 5; a color filter layer 11; a shielding member 7 formed in a region that is between two adjacent light reception sections 5 and is formed in a region on the light reception region; and a plurality of lenses 9 for condensing light at the light reception section 5 including a lower edge formed between the semiconductor substrate 4 and the color filter layer 11, and arranged upward as compared with the upper edge of the shielding member 7 and an upper projecting surface section. The plurality of lenses 9 include a portion comprising one continuous layer.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供即使在光接收区域的边缘附近也能够提高灵敏度特性的固态成像装置。固态成像装置包括形成在半导体基板4上的受光部5; 由多个光接收部分5形成在半导体衬底4上的光接收区域; 滤色器层11; 形成在两个相邻的光接收部分5之间并形成在光接收区域的区域中的区域中的屏蔽部件7; 以及用于在受光部5处聚光的多个透镜9，包括形成在半导体基板4和滤色器层11之间的下边缘，并且与屏蔽部件7的上边缘相比向上布置表面部分。多个透镜9包括包括一个连续层的部分。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2004288975A Charge coupled device and its manufacturing method 有权
公开(公告)号：JP2004288975A
公开(公告)日：2004-10-14
申请号：JP2003080662
申请日：2003-03-24
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： IZUMI MAKOTO , OKIKAWA MITSURU , SASADA KAZUHIRO
IPC分类号： H01L29/762 , H01L21/28 , H01L21/339 , H01L21/8232 , H01L27/146 , H01L27/148 , H01L29/06
CPC分类号： H01L27/14689 , H01L27/14812
摘要： PROBLEM TO BE SOLVED: To provide a charge coupled device capable of improving the transfer efficiency of electric charge by shortening an interval between adjacent gate electrodes and capable of reducing power consumption by reducing parasitic capacity while obtaining a signal of small noise.
SOLUTION: The charge coupled device is provided with a gate insulating film 2 formed on a silicon substrate 1, a 1st gate electrode 3 formed on the gate insulating film 2 and having a substantially flat upper surface and a 2nd gate electrode 5 formed on the gate insulating film 2 through a thermal oxidation film 4 having thickness thinner than the critical minimum size of lithography so as to be adjacent to the 1st gate electrode 3 without being overlapped to the 1st gate electrode 3.
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2003338613A Solid-state image pickup device and manufacturing method therefor 审中-公开
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：JP2003338613A
公开(公告)日：2003-11-28
申请号：JP2002146411
申请日：2002-05-21
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： OKIKAWA MITSURU , ISHIHARA HIROYASU
IPC分类号： G02B5/20 , H01L27/14 , H04N5/335 , H04N5/369 , H04N5/372
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pickup device which can suitably maintain focusing performance by a lens even if a light receiving face is covered by resin or the like and to provide a manufacturing method of the device. SOLUTION: A channel 112 as a light receiving pixel is formed on a semiconductor substrate 110, and a gate insulating film 120, a gate electrode 121, an interlayer insulating film 122, an acrylic layer 123, a color filter 124 and a flattening layer 125 are sequentially laminated and formed above the channel. Convex lenses 130 whose semiconductor substrate 110 sides are flat in accordance with the respective pixels are formed on the flattening layer 125. The light receiving face of a chip of the semiconductor substrate 110 and a CCD image sensor 100 composed of members formed on the upper face of the substrate is stuck to a glass substrate 200 via an epoxy resin 210 whose refractive index is about '1.5'. The lens 130 is formed of a silicon nitride film (Si 3 N 4 ) whose refractive index is about '2'. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种固态图像拾取装置，即使光接收面被树脂等覆盖，也可以适当地保持透镜的聚焦性能，并提供该装置的制造方法。解决方案：作为光接收像素的通道112形成在半导体衬底110上，栅极绝缘膜120，栅电极121，层间绝缘膜122，丙烯酸层123，滤色器124和平坦化层125依次层叠并形成在通道上方。在平坦化层125上形成半导体衬底110侧面为各个像素的平面的凸透镜130.半导体衬底110的芯片的光接收面和由形成在上表面上的部件构成的CCD图像传感器100 的基板通过折射率约为“1.5”的环氧树脂210粘合到玻璃基板200上。透镜130由折射率约为“2”的氮化硅膜（Si 3 4 ）形成。版权所有（C）2004，JPO

6. 发明专利

JP2006229110A Imaging device and imaging device manufacturing method 审中-公开
标题翻译：成像装置和成像装置的制造方法
公开(公告)号：JP2006229110A
公开(公告)日：2006-08-31
申请号：JP2005043730
申请日：2005-02-21
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： OKIKAWA MITSURU , OHASHI MASAAKI
IPC分类号： H01L27/14 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To provide an imaging device having a micro lens which improves the utilization of light.
SOLUTION: The imaging device is composed of cylindrical lenses 20 with a plurality of pixels disposed in line for generating information charge on receipt of light from outside, and extended along the direction in rows of pixels on the incident plane of imaging unit; and cylindrical lenses 22 extended along the direction in columns of pixels on the cylindrical lenses 20.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有提高光利用率的微透镜的成像装置。解决方案：成像装置由圆柱形透镜20组成，其中多个像素排成一行，用于在从外部接收光线上产生信息电荷，并沿成像单元的入射平面上的像素行方向延伸; 和圆柱形透镜22沿圆柱形透镜20上的像素列方向延伸的柱面透镜22.版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005101144A Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2005101144A
公开(公告)日：2005-04-14
申请号：JP2003331142
申请日：2003-09-24
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KAIDA TAKAYUKI , SHIMIZU TATSU , OKIKAWA MITSURU , MIWA TETSUYA , NOMA TAKASHI
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/12 , H01L23/31 , H01L23/485
CPC分类号： H01L24/12 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/15788 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a manufacturing process can be simplified. SOLUTION: The semiconductor device 50 consists of an insulating film 6 which consists of single material (SiO 2 ) and is formed so as to be in contact with an upper surface of a semiconductor chip 5 containing a circuit; an extension pad 13 which is formed so as to be in contact with the upper surface of the insulating film 6; and of a wiring 16 which is formed so as to extend from the side surface of the semiconductor chip 5 along a lower surface, and connected to a lower surface of the extension pad 13 which is exposed by eliminating a part of the insulating film 6. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以简化制造工艺的半导体器件。解决方案：半导体器件50由由单一材料（SiO 2 ）组成并被形成为与半导体芯片5的上表面接触的绝缘膜6组成，半导体芯片5的上表面包含电路形成为与绝缘膜6的上表面接触的延伸垫13; 以及形成为从半导体芯片5的侧面沿着下表面延伸的布线16，并且通过去除绝缘膜6的一部分而露出的延伸焊盘13的下表面连接。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2010016395A Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：JP2010016395A
公开(公告)日：2010-01-21
申请号：JP2009203621
申请日：2009-09-03
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： NOMA TAKASHI , SHINOKI HIROYUKI , TAKAI NOBUYUKI , KITAGAWA KATSUHIKO , TOKUSHIGE TOSHIMICHI , OTAGAKI TAKAYASU , ANDO TATSUYA , OKIKAWA MITSURU
IPC分类号： H01L23/12 , H01L21/3205 , H01L21/60 , H01L23/52
CPC分类号： H01L2224/11
摘要： PROBLEM TO BE SOLVED: To lower cost and to improve the reliability of a semiconductor device having a conductive terminal.
SOLUTION: A manufacturing method for a semiconductor device includes a step of providing a semiconductor wafer having a plurality of semiconductor chips 2 and gluing a glass substrate 3 to the front surface of the semiconductor wafer on which first wiring 5b extending across the boundary between adjacent semiconductor chips 2 is formed, a step of etching the boundary on the back surface of the semiconductor wafer, a step of forming insulating films 16b on side faces and back surfaces of the semiconductor chips 2 that are exposed by etching, a step of etching the first wiring 5b to isolate the first wiring 5b from the boundary, a step of forming second wiring 9a that extends from the side faces to the back faces of the semiconductor chips to connect to the first wiring and come in contact with the insulating film 16b, a step of forming a protective film 10b on the second wiring, and a step of dividing the semiconductor wafer into individual semiconductor devices along the boundary.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：降低成本并提高具有导电端子的半导体器件的可靠性。解决方案：半导体器件的制造方法包括提供具有多个半导体芯片2并且将玻璃衬底3胶合到半导体晶片的前表面的半导体晶片的步骤，在该半导体晶片的前表面上延伸有跨越边界的第一布线5b 在相邻的半导体芯片2之间形成蚀刻半导体晶片的背面的边界的步骤，在通过蚀刻曝光的半导体芯片2的侧面和背面上形成绝缘膜16b的工序，蚀刻第一布线5b以使第一布线5b与边界隔离;形成从半导体芯片的侧面延伸到背面的第二布线9a连接到第一布线并与绝缘膜接触的步骤 16b，在第二布线上形成保护膜10b的步骤，以及沿着边界将半导体晶片分成单个半导体器件的步骤。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2007019919A Solid state imaging device and its drive method 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：JP2007019919A
公开(公告)日：2007-01-25
申请号：JP2005199819
申请日：2005-07-08
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： HIGASHITSUTSUMI YOSHIHITO , OKIKAWA MITSURU , FURUSAWA TOSHIHIRO
IPC分类号： H01L27/148 , H04N5/335 , H04N5/359 , H04N5/3725 , H04N5/376
摘要： PROBLEM TO BE SOLVED: To solve the problem that it is difficult to suppress smears because of restriction in the speed-up of a vertical CCD shift register in a frame transfer type CCD image sensor.
SOLUTION: Applied voltages ϕi, 2; ϕi, 1; ϕs, 2n to ϕs, 3 of transfer electrodes in a section R(1) are switched to an on-voltage V
H2 from a first bit of an imaging portion serving as an object of transfer-up to the first bit of a storage as a transfer destination. Following this, each applied voltage ϕ is switched to an off-voltage successively from an imaging portion toward a storage portion, and information charges held in the section R(1) are moved under the transfer electrode of the first bit of the storage to which ϕs, 2 is applied. Similar transfer operation is repeated with respect to a second bit and after of the imaging portion.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决问题：为了解决由于帧转移型CCD图像传感器中的垂直CCD移位寄存器的加速的限制而难以抑制涂抹的问题。
解决方案：施加电压φi，2; φ，1; 部分R（1）中的转移电极的φs，2n至φs，3从作为转移对象的成像部分的第一位切换到导通电压V SB

10. 发明专利

JP2005217454A Solid-state image pickup device 审中-公开
标题翻译：固态图像拾取器件
公开(公告)号：JP2005217454A
公开(公告)日：2005-08-11
申请号：JP2004017759
申请日：2004-01-27
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： NAKAJIMA ISATO , SHIMIZU TATSU , OKIKAWA MITSURU , MIWA TETSUYA
IPC分类号： H04N5/225 , H01L27/00 , H04N5/335 , H04N5/361
CPC分类号： H01L27/14625
摘要： PROBLEM TO BE SOLVED: To provide a solid-state image pickup device capable of suppressing deterioration in image quality.
SOLUTION: This solid-state image pickup device is provided with a silicon substrate 1 having a light-receiving portion 2 formed thereon, a color filter layer 14 formed above the portion 2, and a lens 12 formed between the silicon substrate 1 and the layer 14 and collecting lights into the portion 2. The lens 12 has a substantially flat top surface portion 12b, wherein a ratio (w1/t1) of the width w1 of the portion 12b of the lens 12 to the thickness t1 of the lens 12 is not more than 0.86.
COPYRIGHT: (C)2005,JPO&NCIPI

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