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1. 发明专利

JP2009017730A Switching power supply 有权
标题翻译：切换电源
公开(公告)号：JP2009017730A
公开(公告)日：2009-01-22
申请号：JP2007178746
申请日：2007-07-06
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： NOGUCHI YASUNARI , FUJIMURA YOSHIO , NISHIKAWA MADOKA , NISHIZAKI YUSUKE
IPC分类号： H02M3/155
CPC分类号： H01L2224/32145 , H01L2224/32245 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/49 , H01L2224/73265 , H01L2924/12032 , H01L2924/13055 , H01L2924/14 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To efficiently mount an insulated gate semiconductor device, a Schottky barrier diode, and a control IC that controls the switching of the insulated gate semiconductor device in a DC-DC converter circuit. SOLUTION: This switching power supply includes the insulated gate semiconductor device 30, the Schottky barrier diode 34, and the control IC 32 that controls the switching of the insulated gate semiconductor device 30. The control IC 32 is mounted sandwiching a conductive connection plate 38 connected electrically to the source terminal of the insulated gate semiconductor device 30 or the anode terminal of the Schottky barrier diode 34. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：有效地安装绝缘栅半导体器件，肖特基势垒二极管和控制在DC-DC转换器电路中的绝缘栅半导体器件的开关的控制IC。解决方案：该开关电源包括绝缘栅半导体器件30，肖特基势垒二极管34和控制绝缘栅半导体器件30的开关的控制IC 32.控制IC 32被安装成夹着导电连接电路38与绝缘栅极半导体器件30的源极端子或肖特基势垒二极管34的阳极端子电连接。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009044843A Switching power supply and its controller 审中-公开
标题翻译：切换电源及其控制器
公开(公告)号：JP2009044843A
公开(公告)日：2009-02-26
申请号：JP2007206595
申请日：2007-08-08
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： FUJIMURA YOSHIO , NOGUCHI YASUNARI , NISHIKAWA MADOKA , NISHIZAKI YUSUKE
IPC分类号： H02M3/155
摘要： PROBLEM TO BE SOLVED: To provide a switching power supply capable of protecting against an overcurrent without fitting an exclusive FET for overcurrent detection.
SOLUTION: The switching power supply contains a switching element 30 for overcurrent detection connected in parallel with the switching element 20 for conversion and a resistor 22a for overcurrent detection. The switching element 30 for overcurrent detection is fitted outside a controller 22, and the resistor 22a for overcurrent detection is fitted inside the controller 22. The controller 22 conducts overcurrent protective processing when the terminal voltage of the resistor 22a for overcurrent detection reaches or exceeds a reference voltage.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够防止过电流的开关电源，而不需要用于过电流检测的专用FET。解决方案：开关电源包括用于与用于转换的开关元件20并联连接的用于过电流检测的开关元件30和用于过电流检测的电阻器22a。用于过电流检测的开关元件30安装在控制器22外部，用于过电流检测的电阻器22a装配在控制器22内。当用于过电流检测的电阻器22a的端电压达到或超过一个时，控制器22进行过电流保护处理参考电压。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2008085188A Insulated gate semiconductor device 审中-公开
标题翻译：绝缘栅半导体器件
公开(公告)号：JP2008085188A
公开(公告)日：2008-04-10
申请号：JP2006265386
申请日：2006-09-28
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： NOGUCHI YASUNARI , ISHIDA HIROYASU , ONODERA SHIGEO
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/0629 , H01L27/0255 , H01L29/0619 , H01L29/4238 , H01L29/7808 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To ensure a predetermined reverse breakdown voltage between source and drain by providing a p+ impurity region to reduce a curvature in an operation region end, thereby relaxing electric field concentration. SOLUTION: In the insulated gate semiconductor device, a channel region continuing to a transistor cell is also disposed in the lower part of a gate pad electrode 18. The channel region positioned on the lower part of the gate pad electrode is fixed with a source potential. In this way, even if the p+ type impurity region is not provided on the entire surface of the lower part of the gate pad electrode, a predetermined reverse breakdown voltage between source and drain can be ensured. Further, a protective diode 12d is formed on a stripe-like polysilicon on the lower part of the gate pad electrode. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了通过提供p +杂质区域以减小操作区域端部的曲率来确保源极和漏极之间的预定反向击穿电压，从而缓和电场浓度。解决方案：在绝缘栅极半导体器件中，连续到晶体管单元的沟道区域也设置在栅极焊盘电极18的下部。位于栅极焊盘电极的下部的沟道区域固定有源潜力。以这种方式，即使在栅极焊盘电极的下部的整个表面上没有设置p +型杂质区域，也可以确保源极与漏极之间的规定的反向击穿电压。此外，在栅极焊盘电极的下部的条状多晶硅上形成保护二极管12d。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008199741A Switching power circuit 有权
标题翻译：切换电源电路
公开(公告)号：JP2008199741A
公开(公告)日：2008-08-28
申请号：JP2007030798
申请日：2007-02-09
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： FUJIMURA YOSHIO , NOGUCHI YASUNARI
IPC分类号： H02M3/28
摘要： PROBLEM TO BE SOLVED: To solve the problem that abnormal noise occurs from a transformer at the time of shift from thinning oscillation to regular oscillation when thinning oscillation is performed at the time of a light load since shift between thinning oscillation and regular oscillation periodically occurs and the period becomes an audio range band.
SOLUTION: Since mask time MT is increased by increase time PT when thinning oscillation is started in a switching power supply, a periodical change in thinning oscillation and regular oscillation is suppressed. Abnormal noise hardly occurs from the transformer at the time of shift from thinning oscillation to regular oscillation.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了解决在轻负载时进行稀疏振荡时，从变薄振荡到规则振荡时从变压器发生异常噪声的问题，因为变薄振荡和规律振荡之间的移动周期性地发生，并且该周期成为音频范围频带。解决方案：由于在开关电源中开始薄化振荡时，由于屏蔽时间MT增加PT的增加，所以减少了间隔振荡和规律振荡的周期性变化。在从变薄振荡到规则振荡的转变时，变压器几乎不发生异常噪声。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2008085189A Insulated gate semiconductor device 有权
标题翻译：绝缘栅半导体器件
公开(公告)号：JP2008085189A
公开(公告)日：2008-04-10
申请号：JP2006265387
申请日：2006-09-28
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： NOGUCHI YASUNARI , ISHIDA HIROYASU , ONODERA SHIGEO
IPC分类号： H01L29/78 , H01L21/336 , H01L27/04 , H01L29/739
CPC分类号： H01L29/7811 , H01L27/0255 , H01L29/0619 , H01L29/0696 , H01L29/7804 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To ensure a high reverse breakdown voltage between source and drain without reducing an area of an operation region. SOLUTION: In the insulated gate semiconductor device, a channel region continuing to a transistor cell is also disposed in the lower part of a gate pad electrode. The channel region positioned on the lower part of the gate pad electrode is fixed with a source potential. In this way, even if the p+ type impurity region is not provided on the entire surface of the lower part of the gate pad electrode, a predetermined reverse breakdown voltage between source and drain can be ensured. Further, a protective diode 12d is formed on a conductive layer disposed on the outer periphery of the operation region. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了确保源极和漏极之间的高反向击穿电压，而不减少操作区域的面积。解决方案：在绝缘栅极半导体器件中，连续到晶体管单元的沟道区也设置在栅极焊盘电极的下部。位于栅极焊盘电极的下部的沟道区域固定有源极电位。以这种方式，即使在栅极焊盘电极的下部的整个表面上没有设置p +型杂质区域，也可以确保源极与漏极之间的规定的反向击穿电压。此外，在设置在操作区域的外周上的导电层上形成保护二极管12d。版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2008199765A Starting circuit, and switching control circuit 审中-公开
标题翻译：启动电路和开关控制电路
公开(公告)号：JP2008199765A
公开(公告)日：2008-08-28
申请号：JP2007031793
申请日：2007-02-13
申请人： Sanyo Electric Co Ltd , Sanyo Semiconductor Co Ltd , 三洋半導体株式会社 , 三洋電機株式会社
发明人： YAMAMOTO SHINICHI , NOGUCHI YASUNARI , FUJIMURA YOSHIO , NISHIZAKI YUSUKE
IPC分类号： H02M3/28 , H01L21/822 , H01L27/04 , H01L27/088 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To reduce current consumption.
SOLUTION: A starting circuit is provided with a first transistor, which is connected to a load while an input voltage is applied to an input electrode so as to control conduction of the load, a second transistor in which an input voltage is applied to an input electrode, and a control-voltage generating circuit that generates a control voltage lower than the input voltage from the input voltage so as to apply the control voltage to a control electrode of the second transistor. A control circuit for controlling ON/OFF of the first transistor is started by a current outputted from an output electrode of the second transistor.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：减少电流消耗。解决方案：启动电路设置有第一晶体管，其连接到负载，同时将输入电压施加到输入电极以控制负载的导通;施加输入电压的第二晶体管以及控制电压产生电路，其从输入电压产生低于输入电压的控制电压，以将控制电压施加到第二晶体管的控制电极。用于控制第一晶体管的导通/截止的控制电路由从第二晶体管的输出电极输出的电流开始。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2005204393A Switching power supply circuit 有权
标题翻译：切换电源电路
公开(公告)号：JP2005204393A
公开(公告)日：2005-07-28
申请号：JP2004007313
申请日：2004-01-14
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： FUJIMURA YOSHIO , NOGUCHI YASUNARI
IPC分类号： H02M3/28
摘要： PROBLEM TO BE SOLVED: To prevent a beat sound from being generated from a transformer of frequency of audible region due to that a stop period is constant.
SOLUTION: An edge detection signal is supplied to a comparator circuit 60 through a gate circuit 40, thereby controlling the oscillation frequency of the transformer. Two types of times in which this gate circuit 40 is closed, are formed by two comparator circuits 54, 56, and alternately selected by a selecting circuit 58.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了防止从可听区域的频率的变压器产生节拍声，由于停止时段是恒定的。解决方案：边沿检测信号通过栅极电路40提供给比较器电路60，从而控制变压器的振荡频率。这种门电路40关闭的两种类型的时间由两个比较器电路54,56形成，并由选择电路58交替选择。（C）2005，JPO和NCIPI

8. 发明专利

JP2007305751A Insulated-gate semiconductor device 有权
标题翻译：绝缘栅半导体器件
公开(公告)号：JP2007305751A
公开(公告)日：2007-11-22
申请号：JP2006131820
申请日：2006-05-10
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： ISHIDA HIROYASU , NOGUCHI YASUNARI
IPC分类号： H01L29/78 , H01L21/28 , H01L29/06 , H01L29/417
CPC分类号： H01L29/7395 , H01L27/088 , H01L29/0619 , H01L29/0696 , H01L29/1095 , H01L29/42372 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： PROBLEM TO BE SOLVED: To provide a MOSFET which ensures a high drain-source reverse withstanding voltage without reducing the operating region area.
SOLUTION: A channel region and a gate electrode continuous to a transistor cell are disposed also below a gate pad electrode. The transistor cells are arranged like stripes, and contact the source electrodes to fix the channel region and the gate electrode located below the gate pad electrode to a specified potential. This ensures a specified drain-source reverse withstanding voltage without providing a p
+ -type impurity region in the entire surface below the gate pad electrode.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种确保高漏极 - 源极反向耐压而不减少工作区域面积的MOSFET。解决方案：与晶体管单元连续的沟道区和栅电极也设置在栅极焊盘电极的下方。晶体管单元布置成条状，并且与源电极接触以将位于栅极焊盘电极下方的沟道区域和栅电极固定到指定电位。这确保了指定的漏源反向耐受电压，而不在栅极焊盘电极下方的整个表面中提供p + 型杂质区。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2006094676A Switching power supply 有权
标题翻译：切换电源
公开(公告)号：JP2006094676A
公开(公告)日：2006-04-06
申请号：JP2004280042
申请日：2004-09-27
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： NOGUCHI YASUNARI
IPC分类号： H02M3/28
CPC分类号： H02M3/33523 , H02M2001/0032 , Y02B70/16
摘要： PROBLEM TO BE SOLVED: To provide a control circuit of a switching power supply in which power consumption of an electric apparatus can be reduced at the time of standby.
SOLUTION: In the switching power supply for rectifying AC voltage from an AC power supply, switching a rectified voltage supplied to a pulse transformer, and supplying a predetermined load voltage to a load connected with the secondary winding of the pulse transformer, the rectified voltage is supplied through a first resistor to the power supply terminal of a control circuit 101, a voltage being induced in the drive winding of the pulse transformer is supplied through a diode to the power supply terminal, a standby signal designating standby mode of the switching power supply 100 is received externally, and a voltage lower than a voltage threshold at which the control circuit is operable is supplied to the power supply terminal of the control circuit.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在待机时能够减少电气设备的功耗的开关电源的控制电路。解决方案：在交流电源整流交流电压的开关电源中，切换提供给脉冲变压器的整流电压，并向与脉冲变压器的次级绕组连接的负载提供预定的负载电压，整流电压通过第一电阻器提供给控制电路101的电源端子，在脉冲变压器的驱动绕组中感应的电压通过二极管提供给电源端子，指示待机模式的待机信号开关电源100被外部接收，并且低于控制电路可操作的电压阈值的电压被提供给控制电路的电源端子。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2006254590A Artificial resonance system switching power supply and artificial resonance system switching power circuit using the same 有权
标题翻译：人造共振系统切换电源和人工共振系统切换电源电路
公开(公告)号：JP2006254590A
公开(公告)日：2006-09-21
申请号：JP2005067373
申请日：2005-03-10
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： NOGUCHI YASUNARI , FUJIMURA YOSHIO
IPC分类号： H02M3/28
CPC分类号： H02M3/33523 , H02M1/32 , Y02B70/1433 , Y10T307/74
摘要： PROBLEM TO BE SOLVED: To reduce the number of capacitors connected to an artificial resonance system switching power supply. SOLUTION: In an artificial resonance system switching power supply, power is intermittently supplied to a primary winding of a transformer connected to the outside by repeating the switching of a MOSFET 1, thus supplying power to a load connected to a secondary winding electromagnetically coupled to the primary winding. The artificial resonance system switching power supply comprises a level determination circuit 62 for setting a reference voltage stepwise according to a back electromagnetic voltage value by receiving a back electromagnetic voltage generated in an auxiliary winding electromagnetically coupled to the primary winding when the MOSFET 1 is turned off, and a reference voltage generation circuit 10; and an oscillation level comparison circuit 15 for outputting a signal for turning off the MOSFET 1 when a feedback voltage becomes larger than the reference voltage by receiving the feedback voltage corresponding to the power supplied to the load. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：减少连接到人造共振系统开关电源的电容器的数量。解决方案：在人造共振系统开关电源中，通过重复MOSFET 1的切换，间断地将功率提供给连接到外部的变压器的初级绕组，从而向连接到次级绕组的负载电磁供电耦合到初级绕组。人造共振系统开关电源包括：电平确定电路62，用于通过接收当MOSFET 1断开时电磁耦合到初级绕组的辅助绕组中产生的反向电磁电压，根据反向电磁电压值逐步设定参考电压和参考电压产生电路10; 以及振荡电平比较电路15，用于通过接收与提供给负载的电力相对应的反馈电压，当反馈电压变得大于参考电压时，输出用于关断MOSFET 1的信号。版权所有（C）2006，JPO＆NCIPI

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