专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明专利

JP2004214397A Composite type semiconductor device and method for manufacturing the same 有权
标题翻译：复合型半导体器件及其制造方法
公开(公告)号：JP2004214397A
公开(公告)日：2004-07-29
申请号：JP2002381887
申请日：2002-12-27
申请人： Sanken Electric Co Ltd , サンケン電気株式会社
发明人： KOSUGI KIMIAKI , TAKAHASHI TETSUYA
IPC分类号： H01L29/74 , H01L21/332 , H01L29/866
摘要： PROBLEM TO BE SOLVED: To provide a composite type semiconductor element where voltage to be turned on is easily set to a desired value.
SOLUTION: The composite type semiconductor element is provided with a thyristor consisting of an n1 area 11, a p1 area 12, an n2 area 13 and a p2 area 14, a first diode consisting of a first p-type semiconductor area 15 and a first n-type semiconductor area 16 and connected to the p1 area, and a second diode consisting of a second p-type semiconductor area 17 and a second n-type semiconductor area 18 and connected to the n1 area. The first and second diodes are connected in series so that the flowing direction of currents flowing through each by breakdown. By properly increasing the number of diodes to be connected, it is possible to make the thyristor turn on a desired high voltage.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种复合型半导体元件，其中要接通的电压容易设定为期望值。解决方案：复合型半导体元件设置有由n1区域11，p1区域12，n2区域13和p2区域14组成的晶闸管，由第一p型半导体区域15 以及与p1区域连接的第一n型半导体区域16，以及与n1区域连接的由第二p型半导体区域17和第二n型半导体区域18构成的第二二极管。第一和第二二极管串联连接，使电流的流动方向通过击穿而流过。通过适当地增加要连接的二极管的数量，可以使晶闸管导通期望的高电压。版权所有（C）2004，JPO＆NCIPI

IPRDB

热门服务

关于我们

友情链接

联系方式