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JP2005286334A TRENCH CAPACITOR USING SiGe AND ITS FORMING METHOD 有权
标题翻译：使用SiGe的TRENCH电容器及其形成方法
公开(公告)号：JP2005286334A
公开(公告)日：2005-10-13
申请号：JP2005092420
申请日：2005-03-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： CHUNG SUK-JIN , LEE SEUNG-HWAN , KIM SUNGTAE , KIM YOUNG SUN , LIM JAE-SOON , PARK YOUNG-GEUN
IPC分类号： H01L27/108 , H01L21/334 , H01L21/82 , H01L21/8242 , H01L29/94
CPC分类号： H01L27/10867 , H01L27/10829 , H01L27/1087 , H01L29/66181 , H01L29/945
摘要： PROBLEM TO BE SOLVED: To provide a trench capacitor using SiGe and its forming method. SOLUTION: The method for forming the trench capacitor has step for: forming an etching mask having a first layer, a second layer, and an opening portion on a silicon substrate; forming a first trench by etching the second layer and the first layer using the etching mask; then, forming a recessed groove in the first layer by isotropicall etching the first layer selectively after forming an insulating film on the resultant product including the recessed groove; forming an insulating film collar in the recessed groove by anisotropically dry-etching the insulating film, etching the silicon substrate using the etching mask; forming a second trench by extending the first trench after removing the etching mask; forming a buried plate which covers the outside of the second trench; forming a dielectric film on the inner wall of the second trench; and forming a storing electrode. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供使用SiGe的沟槽电容器及其形成方法。解决方案：用于形成沟槽电容器的方法具有以下步骤：在硅衬底上形成具有第一层，第二层和开口部分的蚀刻掩模; 通过使用所述蚀刻掩模蚀刻所述第二层和所述第一层来形成第一沟槽; 然后，在包含所述凹槽的所得产品上形成绝缘膜之后，通过等温蚀刻所述第一层选择性地在所述第一层中形成凹槽; 通过对所述绝缘膜进行各向异性干蚀刻，在所述凹槽中形成绝缘膜套环，使用所述蚀刻掩模蚀刻所述硅衬底; 通过在移除蚀刻掩模之后延伸第一沟槽来形成第二沟槽; 形成覆盖第二沟槽外侧的掩埋板; 在所述第二沟槽的内壁上形成介电膜; 并形成存储电极。版权所有（C）2006，JPO＆NCIPI

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