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1. 发明专利

JP2006245585A Memory apparatus, its performance, and manufacturing method 审中-公开
标题翻译：存储器，其性能和制造方法
公开(公告)号：JP2006245585A
公开(公告)日：2006-09-14
申请号：JP2006055420
申请日：2006-03-01
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM TAE-WAN , HWANG IN-JUN , JEONG WON-CHEOL
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
CPC分类号： G11C11/16 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To provide a memory apparatus comprising external magnetic field generating means, its performance, and manufacturing method.
SOLUTION: The invention comprises magnetic memory means comprising an MTJ cell 42, a transistor, and a bit line 44, and magnetic field generating means which is provided on the exterior of the magnetic memory means and which is for generating a global magnetic field in parallel with a bit line toward the magnetic memory means.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包括外部磁场产生装置，其性能和制造方法的存储装置。解决方案：本发明包括包括MTJ单元42，晶体管和位线44的磁存储装置，以及设置在磁存储装置的外部并用于产生全局磁性的磁场产生装置与位线朝向磁存储器装置平行的场。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2007184591A Phase change storage element including contact with multi-bit cell and diameter to be adjusted therein, its manufacturing method, and its program method 有权
标题翻译：相变存储元件，包括与要调整的多位单元和直径的接触，其制造方法及其程序方法
公开(公告)号：JP2007184591A
公开(公告)日：2007-07-19
申请号：JP2006346152
申请日：2006-12-22
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEONG WON-CHEOL , KIM HYUNG-JUN , LEE SE-HO , PARK JAE-HYUN , JEONG CHANG-WOOK
IPC分类号： H01L27/105 , G11C13/00 , H01L45/00
摘要： PROBLEM TO BE SOLVED: To provide a phase change storage element including a contact where a multi-bit cell and a diameter are adjustable, and to provide its manufacturing method, and its program method. SOLUTION: The phase change storage element includes a chalcogenide element containing substance to be changed into a crystalline state or amorphous state with the impression of a heating current. The first contact is connected to the first region of a chalcogenide element so as to have a first cross sectional region. The second contact is connected to the second region of the chalcogenide element so as to have a second cross sectional region. The first programmable region of the chalcogenide substance is limited within the first region of the chalcogenide element and the state of the first programmable region is programmed by resistance related to the first contact. The second programmable region of the chalcogenide substance is limited within the second region of the chalcogenide element and the state of the second programmable region is programmed by resistance related to the second contact. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种包括多位单元和直径可调的接点的相变存储元件，并提供其制造方法及其程序方法。解决方案：相变存储元件包括硫族化物元素，其含有待加热电流的变形为结晶状态或非晶状态的物质。第一触点连接到硫族化物元件的第一区域以具有第一横截面区域。第二接触件连接到硫族化物元件的第二区域以具有第二横截面区域。硫族化物物质的第一可编程区域被限制在硫族化物元素的第一区域内，并且通过与第一接触相关的电阻对第一可编程区域的状态进行编程。硫族化物物质的第二可编程区域在硫族化物元素的第二区域内被限制，并且通过与第二接触相关的电阻对第二可编程区域的状态进行编程。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006054046A Method of operating magnetic ram device using spin injection, and magnetic ram device 有权
标题翻译：使用旋转注射操作磁性RAM器件的方法和磁性RAM器件
公开(公告)号：JP2006054046A
公开(公告)日：2006-02-23
申请号：JP2005234722
申请日：2005-08-12
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEONG WON-CHEOL , KIM KI-NAM , JEONG HONG-SIK , JEONG GI-TAE , PARK JAE-HYUN
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide a method for operating a magnetic RAM device including a memory cell having a magnetic tunnel junction structure on a substrate. SOLUTION: The method is provided for operating the magnetic RAM device including the memory cell having the magnetic tunnel junction structures 41a, 41b on the substrate 1. The method includes steps of: impressing a writing current pulse through the magnetic tunnel junction structures 41a, 41b; and impressing a writing magnetic field pulse onto the magnetic tunnel junction structures, wherein at least a portion of the writing magnetic field pulse is overlapping in time with respect to at least a portion of the writing current pulse. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种在基板上操作包括具有磁性隧道结结构的存储单元的磁性RAM器件的方法。解决方案：提供了用于操作包括在衬底1上具有磁性隧道结结构41a，41b的存储单元的磁性RAM器件的方法。该方法包括以下步骤：通过磁性隧道结结构施加写入电流脉冲 41a，41b; 并将写入磁场脉冲施加到磁性隧道结结构上，其中写入磁场脉冲的至少一部分相对于写入电流脉冲的至少一部分在时间上重叠。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2007005785A Phase-change memory cell having cell diode and bottom electrode self-aligned with each other, and manufacturing method thereof 审中-公开
标题翻译：具有单独二极管的相变存储单元和与每个其它单元自动对准的底电极及其制造方法
公开(公告)号：JP2007005785A
公开(公告)日：2007-01-11
申请号：JP2006150232
申请日：2006-05-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK JAE-HYUN , GO ZAIKI , LEE SE-HO , JEONG WON-CHEOL
IPC分类号： H01L27/105 , H01L45/00
CPC分类号： H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit device having a vertical diode.
SOLUTION: An integrated circuit device includes an integrated circuit substrate, and an insulating film formed on the integrated circuit substrate. A contact hole penetrates the insulating film. A vertical diode is provided in a lower region of the contact hole, and a bottom electrode is provided above the vertical diode in the contact hole. The bottom surface of the bottom electrode is positioned above the top surface of the vertical diode. The bottom electrode is self-aligned with the vertical diode. The top surface area of the bottom electrode is smaller than the horizontal section area of the contact hole. A method of manufacturing the integrated circuit device is also provided.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有垂直二极管的集成电路器件。解决方案：集成电路器件包括集成电路衬底和形成在集成电路衬底上的绝缘膜。接触孔穿透绝缘膜。在接触孔的下部区域设置有垂直二极管，在接触孔中的垂直二极管的上方设置有底部电极。底部电极的底表面位于垂直二极管的顶表面之上。底部电极与垂直二极管自对准。底部电极的顶表面积小于接触孔的水平截面面积。还提供了一种制造集成电路器件的方法。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2006279047A Magnetic memory apparatus and manufacturing method therefor 有权
标题翻译：磁记忆装置及其制造方法
公开(公告)号：JP2006279047A
公开(公告)日：2006-10-12
申请号：JP2006086233
申请日：2006-03-27
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： JEONG WON-CHEOL
IPC分类号： H01L27/105 , H01L21/8246
CPC分类号： B82Y25/00 , G11C11/15 , H01F10/3254
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory and its manufacturing method.
SOLUTION: The memory apparatus further includes a plurality of magnetic storage cells. Each of the magnetic storage cells includes an electrical insulating film extending between a magnetic storage element and a magnetic flux focusing film on the magnetic storage element, and a bit line and the magnetic flux focusing film. The electrical insulating film can be contacted by the upper surface of the magnetic flux focusing film and the lower surface of the bit line. The magnetic storage cell is extended between the magnetic flux focusing film and the magnetic storage element, and further includes an electrical, conductive film composed of a non-ferromagnetic material.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供磁存储器及其制造方法。解决方案：存储装置还包括多个磁存储单元。每个磁存储单元包括在磁存储元件上的磁存储元件和磁通量聚焦膜之间延伸的电绝缘膜，以及位线和磁通聚焦膜。电绝缘膜可以通过磁通聚焦膜的上表面和位线的下表面接触。磁存储单元在磁通量聚焦膜和磁存储元件之间延伸，并且还包括由非铁磁材料构成的电导电膜。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2006165556A Magnetic memory device, magnetic memory device manufacturing method, and magnetic memory device operation method 有权
标题翻译：磁记忆体装置，磁记忆体装置的制造方法以及磁记忆装置的操作方法
公开(公告)号：JP2006165556A
公开(公告)日：2006-06-22
申请号：JP2005350513
申请日：2005-12-05
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： HWANG IN-JUN , KIM TAE-WAN , JEONG WON-CHEOL
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory device having high cell selection accuracy and being capable of decreasing drive voltage, a magnetic memory device manufacturing method, and a magnetic memory device operation method. SOLUTION: A magnetic memory device comprises a substrate 40, a transistor T provided on the substrate and constituted of a gate laminated body G1 comprising a gate electrode, source S1, and drain D1, a magnetic tunneling junction cell 48 on which data is recorded, and magnetic field generating means for generating at the partial region of the magnetic tunneling junction cell 48 a magnetic field for reversing the magnetic polarization of the magnetic tunneling junction cell 48. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高电池选择精度并能够降低驱动电压的磁存储器件，磁存储器件制造方法和磁存储器件操作方法。解决方案：磁存储器件包括衬底40，设置在衬底上并由包括栅电极，源S1和漏极D1的栅层叠体G1构成的晶体管T，磁隧道结单元48，数据以及磁场产生装置，用于在磁隧道结单元48的部分区域处产生用于反转磁隧道结单元48的磁极化的磁场。版权所有（C）2006，JPO和NCIPI

7. 发明专利

JP2005159325A Phase change memory element and its forming method 有权
标题翻译：相变记忆元件及其形成方法
公开(公告)号：JP2005159325A
公开(公告)日：2005-06-16
申请号：JP2004310548
申请日：2004-10-26
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： JEONG WON-CHEOL , KIM HYOUNG-JOON , PARK JAE-HYUN , JEONG CHANG-WOOK
IPC分类号： H01L27/105 , G01C1/10 , G11C11/56 , G11C13/00 , H01L27/10 , H01L27/108 , H01L45/00
CPC分类号： H01L45/06 , H01L45/122 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/1666
摘要： PROBLEM TO BE SOLVED: To provide a phase change memory element and a method of forming the phase change memory element.
SOLUTION: This element is provided with a heating electrode 106 having an electrode hole 112. The electrode hole 112 penetrates a predetermined region of the heating electrode 106. A phase change substance pattern 116a is in contact with an inner wall of the electrode hole 112. A contact surface of the phase change substance pattern 116a and the heating electrode 106 is an inner wall surface of the electrode hole 112. Thereby, an electric power consumption of the phase change memory element can be decreased by reducing a contact area of the heating electrode 106 and the phase change substance pattern 116a.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种相变存储元件和形成相变存储元件的方法。解决方案：该元件设置有具有电极孔112的加热电极106.电极孔112穿过加热电极106的预定区域。相变物质图案116a与电极的内壁接触相变物质图案116a和加热电极106的接触表面是电极孔112的内壁表面。因此，可以通过减小相变存储元件的接触面积来减小相变存储元件的电力消耗加热电极106和相变物质图案116a。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004311942A Magnetic ram element having reference cell and its structure 有权
公开(公告)号：JP2004311942A
公开(公告)日：2004-11-04
申请号：JP2003400314
申请日：2003-11-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： JEONG WON-CHEOL
IPC分类号： H01L27/105 , G11C11/14 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/10 , H01L27/22 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1673
摘要： PROBLEM TO BE SOLVED: To provide a magnetic RAM(random access memory) element proper for increasing a sensitivity tolerance and integration of a sensing amplifier.
SOLUTION: The magnetic RAM element includes main array portions A1, A2 and a reference cell array portion B. The main array portions A1, A2 have a plurality of main cells located along a line and column in two dimensions, and they have a reference access transistor and main magnetic resistor 40a connected connected in series respectively. The reference cell array portion B has a plurality of reference cells located in a direction of column in one dimension. and they have a reference access transistor and reference magnetic resistor 40b connected in series respectively. The main magnetic resistor 40a is arrayed in one direction on plane, and the reference magnetic resistor 40b is arrayed so as to intersect it, therefore, each of the reference magnetic resistors 40b always have a value between the maximum and minimum of the main magnetic resistor 40a.
COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2005109470A Programming method of mram device and memory having heat generating layer 审中-公开
标题翻译： MRAM器件的编程方法和具有热生成层的存储器
公开(公告)号：JP2005109470A
公开(公告)日：2005-04-21
申请号：JP2004265488
申请日：2004-09-13
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： JEONG WON-CHEOL , KIM HYOUNG-JOON , PARK JAE-HYUN , JEONG CHANG-WOOK
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/15
摘要： PROBLEM TO BE SOLVED: To provide a magnetothermo RAM cell suited to improve not only the selectivity of a single magnetic tunnel junction structure but also heating efficiency without using a digit line. SOLUTION: A MRAM device is provided. The MRAM device is provided with electrodes (first electrodes) TA1, TA2 of memory cell access transistors on a substrate 51, magnetic tunnel junction elements 86a, 86b electrically connected to the first electrodes TA1, TA2, and a bit line (a second electrode) 91 electrically connected to the first electrodes TA1, TA2 through the magnetic tunnel junction elements 86a, 86b. The device can be further provided with heat generating layers 77a, 77b electrically connected in series to the magnetic tunnel junction elements 86a, 86b between the first TA1, TA2 electrodes and the second electrode 91, and the heat generating layers 77a, 77b provide a relatively high resistance to a current flowing through magnetic tunnel junction elements 86a, 86b. A method related to the MRAM device can be also provided. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种适合不仅改善单个磁隧道结结构的选择性而且不使用数字线的加热效率的磁热RAM单元。解决方案：提供MRAM设备。 MRAM器件具有衬底51上的存储单元存取晶体管的电极（第一电极）TA1，TA2，与第一电极TA1，TA2和位线（第二电极）电连接的磁性隧道结元件86a，86b， 91通过磁性隧道结元件86a，86b与第一电极TA1，TA2电连接。该装置还可以具有与第一TA1，TA2电极和第二电极91之间的磁性隧道结元件86a，86b串联电连接的发热层77a，77b，并且发热层77a，77b提供相对的对流过磁性隧道结元件86a，86b的电流具有高电阻。也可以提供与MRAM装置相关的方法。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2005011502A Method of reading information in magnetic memory using reversible resistance change in magnetic tunnel junction 审中-公开
标题翻译：使用磁性隧道结中的可逆电阻变化在磁记忆体中读取信息的方法
公开(公告)号：JP2005011502A
公开(公告)日：2005-01-13
申请号：JP2004177367
申请日：2004-06-15
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： JEONG WON-CHEOL
IPC分类号： G11C11/15 , H01F10/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
CPC分类号： G11C11/15 , G11C11/1673
摘要： PROBLEM TO BE SOLVED: To provide a method of reading information in a magnetic memory using a reversible resistance change in a magnetic tunnel junction.
SOLUTION: This method is characterized in that the information recorded in the magnetic tunnel junction is read by monitoring the electric resistance of the magnetic tunnel junction changed by electromagnetic disturbance. At the time, it is desirable that horizontal length and vertical length are different from each other in the magnetic tunnel junction, and it is desirable that the electromagnetic disturbance is the change of a magnetic field formed by a current flowing to the short direction of the magnetic tunnel junction.
COPYRIGHT: (C)2005,JPO&NCIPI

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