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    • 6. 发明专利
    • Gap occurrence prevention structure and plasma processing apparatus having the same
    • GAP事件预防结构和等离子体处理装置
    • JP2008172240A
    • 2008-07-24
    • JP2008002005
    • 2008-01-09
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • PARK EUI-JINCHOI YUN-HOPARK IN-YOUNGJEONG HWAN-ILCHOI SUNG-SOK
    • H01L21/683H02N13/00
    • H01L21/67126H01J37/32495H01L21/68735
    • PROBLEM TO BE SOLVED: To provide a gap occurrence prevention structure which is capable of preventing a sealing member interposed between an electrostatic chuck and a focus ring from burning. SOLUTION: This plasma processing apparatus comprises: a chamber in which a plasma atmosphere is formed; an upper electrode which is mounted on the upper end of the chamber; an eletrostatic chuck 200 which is mounted on the lower end of the chamber and houses a lower electrode, and on the upper surface of which a wafer W is disposed; and a gap protection portion 400 which isolates a space between the eletrostatic chuck 200 and a focus ring arranged on the outer side of the eletrostatic chuck 200 from the outside. The apparatus prevents sealing members interposed between the electrostatic chuck and the focus ring from burning, and also prevents a space between the electrostatic chuck and the focus ring from being accumulated by polymer or a by-product after etching. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供能够防止静电卡盘和聚焦环之间的密封构件燃烧的间隙发生防止结构。 该等离子体处理装置包括:形成等离子体气氛的室; 安装在所述室的上端的上电极; 安装在室的下端并容纳下电极的静电吸盘200,其上表面设置有晶片W; 以及间隔保护部400,其隔离从静电卡盘200和设置在静电吸盘200的外侧的聚焦环之间的空间。 该装置防止静电卡盘和聚焦环之间插入的密封件燃烧,并且还防止静电卡盘和聚焦环之间的空间在蚀刻之后被聚合物或副产物积聚。 版权所有(C)2008,JPO&INPIT
    • 7. 发明专利
    • Error correcting circuit, its method, and semiconductor memory device equipped with the circuit
    • 错误校正电路,其方法和配备电路的半导体存储器件
    • JP2008052743A
    • 2008-03-06
    • JP2007220270
    • 2007-08-27
    • Samsung Electronics Co Ltd三星電子株式会社Samsung Electronics Co.,Ltd.
    • YIM YONG-TAECHOI YUN-HO
    • G06F12/16
    • G11C7/1006G06F11/1008G11C2029/0411G11C2207/104
    • PROBLEM TO BE SOLVED: To provide an error correcting circuit, its method, and a semiconductor memory device equipped with the circuit. SOLUTION: The error correcting circuit comprises a partial syndrome generator, first and second error position detectors, a coefficient computer and a determining section. The partial syndrome generator computes two or more partial syndromes using code data. The first error position detector computes a first error position using only a part of the partial syndrome, and the coefficient computer computes a coefficient of an error position equation using two or more partial syndromes. The determining section determines an error type based on the computed coefficient. The second error position detector selectively computes a second error position based on the error type. COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:提供一种纠错电路,其方法和配备该电路的半导体存储器件。 解决方案:误差校正电路包括部分校正子发生器,第一和第二误差位置检测器,系数计算机和确定部分。 部分综合征发生器使用代码数据计算两个或更多个部分综合征。 第一误差位置检测器仅使用部分综合征的一部分来计算第一误差位置,并且系数计算机使用两个或更多个部分综合征计算误差位置方程的系数。 确定部分基于所计算的系数来确定错误类型。 第二错误位置检测器基于错误类型选择性地计算第二错误位置。 版权所有(C)2008,JPO&INPIT