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1. 发明专利

JP2008047858A Vertical structure nitride semiconductor light emitting device and its manufacturing method 有权
标题翻译：立式结构氮化物半导体发光器件及其制造方法
公开(公告)号：JP2008047858A
公开(公告)日：2008-02-28
申请号：JP2007104242
申请日：2007-04-11
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： YOON SANG HO , LEE SU YEOL , BAIK DOO GO , CHOI SEOK BEOM , JANG TAE SUNG , WOO JONG GUN
IPC分类号： H01L33/12 , H01L33/22 , H01L33/32 , H01L33/36
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a vertical structure nitride semiconductor light emitting device capable of simultaneously improving electrical characteristics and optical properties of a light emitting device, and also to provide a method of manufacturing the same. SOLUTION: This vertical structure nitride semiconductor light emitting device comprises: a structure support layer 200; a p-type electrode 150 formed on the structure support layer; a p-type nitride semiconductor layer 140 formed on the p-type electrode 150; an active layer 130 formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer 120 formed on the active layer; an n-type electrode 160 formed in part on the n-type nitride semiconductor layer; and a buffer layer 110 with a convex and concave pattern which is formed in a region on the n-type nitride semiconductor layer where the n-type electrode 160 is not formed, wherein the surface of the n-type nitride semiconductor layer in contacting with the n-type electrode is flat. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够同时改善发光器件的电特性和光学特性的垂直结构氮化物半导体发光器件，并提供其制造方法。解决方案：该垂直结构氮化物半导体发光器件包括：结构支撑层200; 形成在结构支撑层上的p型电极150; 形成在p型电极150上的p型氮化物半导体层140; 形成在p型氮化物半导体层上的有源层130; 形成在有源层上的n型氮化物半导体层120; 形成在n型氮化物半导体层上的n型电极160; 以及形成在n型氮化物半导体层上未形成n型电极160的区域中的凸凹图案的缓冲层110，其中n型氮化物半导体层的表面与 n型电极是平的。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008053685A Vertical-structure gallium nitride light-emitting diode element, and its manufacturing method 审中-公开
标题翻译：垂直结构氮化钠发光二极管元件及其制造方法
公开(公告)号：JP2008053685A
公开(公告)日：2008-03-06
申请号：JP2007111743
申请日：2007-04-20
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： LEE SU YEOL , O BANWON , BAIK DOO GO , JANG TAE SUNG , WOO JONG GUN , CHOI SEOK BEOM , YOON SANG HO , KIM DONU , YEO IN TAE
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42 , H01L33/44
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a vertical-structure gallium nitride light-emitting diode element, and to provide its manufacturing method.
SOLUTION: The light-emitting diode element of the invention is manufactured by the steps of: forming a light emitting structure by successively disposing an n-type gallium nitride semiconductor layer, an active layer and a p-type gallium nitride semiconductor layer on a substrate; etching the light emitting structure to separate it by a size for unit LED elements; forming a p-type electrode on each of the separated light emitting structures; filling, with non-conductive material, areas between the respective separated light emitting structures; forming a metal seed layer on the structure thus obtained; forming a first plated layer on the metal seed layer from which the areas between the respective light emitting structures are removed; forming a second plated layer on the first plated layer and the surface of the metal seed layer between the respective first plated layer areas; separating the substrate from the light emitting structures; removing the non-conductive material between the respective light emitting structures exposed by the separation of the substrate; forming an n-type electrode on the n-type gallium nitride semiconductor layer; and removing the metal seed layer and second plated layer portions between the respective light emitting structures, thereby obtaining the vertical-structure gallium nitride light-emitting diode element.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种垂直结构的氮化镓发光二极管元件，并提供其制造方法。解决方案：本发明的发光二极管元件通过以下步骤制造：通过依次配置n型氮化镓半导体层，有源层和p型氮化镓半导体层来形成发光结构在基材上蚀刻发光结构以将其分开单位LED元件的尺寸; 在每个分离的发光结构上形成p型电极; 用非导电材料填充各个分离的发光结构之间的区域; 在如此获得的结构上形成金属种子层; 在所述金属籽晶层上形成第一镀层，除去所述各个发光结构之间的区域; 在所述第一镀层和所述金属种子层的相应的第一镀层区域之间形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底暴露的各个发光结构之间的非导电材料; 在n型氮化镓半导体层上形成n型电极; 并且在各个发光结构之间移除金属种子层和第二镀层部分，从而获得垂直结构的氮化镓发光二极管元件。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008109090A Vertical light-emitting diode element and manufacturing method thereof 有权
标题翻译：垂直发光二极管元件及其制造方法
公开(公告)号：JP2008109090A
公开(公告)日：2008-05-08
申请号：JP2007215092
申请日：2007-08-21
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： LEE SU YEOL , YOON SANG HO , BAIK DOO GO , CHOI SEOK BEOM , JANG TAE SUNG , WOO JONG GUN
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： PROBLEM TO BE SOLVED: To provide a vertical light-emitting diode element that can alleviate contact resistance of n-type electrode and n-type GaN layer, and can improve thermal stability, and the manufacturing method thereof. SOLUTION: TThe vertical light-emitting diode element of this invention comprises an n-type electrode 160, an n-type GaN layer 110 formed on the bottom surface of the n-type electrode 160 that has a Ga + N layer 110c containing more Ga element than N element on the surface touching the n-type electrode 160, an active layer 120 formed on the bottom surface of the n-type GaN layer 110, a p-type GaN layer 130 formed on the bottom surface of the active layer 120, a p-type electrode 140 formed on the bottom surface of the p-type GaN layer 130, and a structure support layer 150 formed on the bottom surface of the p-type electrode 140. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以减轻n型电极和n型GaN层的接触电阻并且可以提高热稳定性的垂直发光二极管元件及其制造方法。本发明的垂直发光二极管元件包括n型电极160，形成在n型电极160的底表面上的n型GaN层110，其具有Ga + SP + 在与n型电极160接触的表面上含有比N元素多的Ga元素的N层110c，形成在n型GaN层110的底面上的有源层120，p型GaN层130 形成在有源层120的底表面上，形成在p型GaN层130的底表面上的p型电极140和形成在p型电极140的底表面上的结构支撑层150。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008047861A Vertical-structure gallium nitride light-emitting diode device and its manufacturing method 有权
标题翻译：垂直结构氮化钠发光二极管器件及其制造方法
公开(公告)号：JP2008047861A
公开(公告)日：2008-02-28
申请号：JP2007125423
申请日：2007-05-10
申请人： Samsung Electro Mech Co Ltd , 三星電機株式会社
发明人： CHOI SEOK BEOM , O BANWON , WOO JONG GUN , BAIK DOO GO
IPC分类号： H01L33/06 , H01L33/22 , H01L33/32
CPC分类号： H01L33/02 , H01L33/22
摘要： PROBLEM TO BE SOLVED: To provide a vertical-structure gallium nitride light-emitting diode device capable of improving external quantum efficiency by enhancing light extraction efficiency. SOLUTION: This vertical-structure gallium nitride light-emitting diode device comprises: an n-type electrode 170; light-emitting structure layers formed on the under surface of the n-type electrode (the light-emitting structure layers comprises: an n-type nitride gallium layer 121 including a concavo-convex surface 160 which consists of a first concavo-convex structure 160a formed regularly periodically and a second concavo-convex structure 160b formed irregularly periodically on the first concavo-convex structure 160a; an active layer 124 formed on the under surface of the n-type nitride gallium layer; and a p-type nitride gallium layer 126 formed on the under surface of the active layer); a p-type electrode 130 formed on the under surface of the p-type nitride gallium layer; and a structural support layer 150 formed on the under surface of the p-type electrode. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供能够通过提高光提取效率来提高外部量子效率的垂直结构的氮化镓发光二极管装置。解决方案：该垂直结构的氮化镓发光二极管装置包括：n型电极170; 形成在n型电极的下表面上的发光结构层（发光结构层包括：包括凹凸表面160的n型氮化镓层121，第一凹凸结构160a 规则地周期性地形成，并且在第一凹凸结构160a上周期性地不规则地形成的第二凹凸结构160b;形成在n型氮化物镓层的下表面上的有源层124;以及p型氮化镓层126 形成在活性层的下表面上）; 形成在p型氮化镓层的下表面上的p型电极130; 以及形成在p型电极的下表面上的结构支撑层150。版权所有（C）2008，JPO＆INPIT

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