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1. 发明专利

JP2002097535A HYDROGEN ABSORBING ALLOY 失效
公开(公告)号：JP2002097535A
公开(公告)日：2002-04-02
申请号：JP2000282131
申请日：2000-09-18
申请人： SUMITOMO METAL IND , JAPAN METALS & CHEM CO LTD
发明人： NAKAHATA TAKUJI , MAEDA HISASHI , YONEMURA MITSUHARU , TERASHITA NAOKATSU , TAKAHASHI SEIJI , SASAI KOUJI
IPC分类号： C22C19/00 , H01M8/04
摘要： PROBLEM TO BE SOLVED: To provide a cheap and light hydrogen absorbing alloy with a high, effective hydrogen-absorbing capacity V of 0.6 mass% or more, which absorbs and desorbs hydrogen promptly, and does not deteriorate even by repetitive uses. SOLUTION: The hydrogen absorbing alloy with an effective hydrogen absorbing quantity of 0.6 mass% or more comprises having a composition expressed by the following general formula (1) or (2), and enabling the alloy to absorb hydrogen under a condition at 0-50 deg.C and at a hydrogen pressure of 0.5-1.1 MPa, and to release hydrogen under a condition between 60 deg.C and a boiling point of water and at a hydrogen pressure of 0.01-0.3 MPa; Ca1-xMgxNiz (1) wherein, 0.60

2. 发明专利

JP2001076724A POSITIVE ELECTRODE MATERIAL FOR LITHIUM BATTERY AND ITS MANUFACTURE 失效
公开(公告)号：JP2001076724A
公开(公告)日：2001-03-23
申请号：JP24901699
申请日：1999-09-02
申请人： SUMITOMO METAL IND
发明人： YAMAMOTO KOJI , TERAO KOICHI , YONEMURA MITSUHARU , KAMEI KAZUTO
IPC分类号： H01M4/505 , H01M4/525 , H01M4/58
摘要： PROBLEM TO BE SOLVED: To improve heat stability of a LiNiO2 base positive electrode material for a lithium battery with high discharge capacity without decreasing discharge capacity. SOLUTION: This positive electrode material for a lithium ion battery containing an oxide of at least one kind element Z of B and P in an atomic ratio (a) of Z/(Ni+M) satisfying 0.001

3. 发明专利

JP2000256093A SILICON MATERIAL HAVING CLATHRATE CRYSTAL STRUCTURE AND ITS PRODUCTION 失效
公开(公告)号：JP2000256093A
公开(公告)日：2000-09-19
申请号：JP6385199
申请日：1999-03-10
申请人： SUMITOMO METAL IND
发明人： MUNETO SHINJI , MORIGUCHI KOJI , YONEMURA MITSUHARU , SAWAZAKI TATSUO , SHIBAGAKI SHIGEKI , SHIRAKAWA YOSHINORI , IKEDA NAOKI
IPC分类号： C01B33/02 , C23C14/14 , C23C14/46 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a clathrate crystal consisting of only silicon atoms without containing other elements and to provide a method for its production. SOLUTION: This silicon material having a composite crystal structure consists of a mixture of Si46 single crystal lattices as inclusion lattices of silicon atoms and Si136 single crystal lattices as clathrate lattices. The silicon material is produced by forming an amorphous silicon layer on a silicon clathrate compd. crystal and heating to epitaxially grow the layer. Or, the silicon material is produced by forming amorphous silicon by ion beam sputtering at

4. 发明专利

JPH11307095A GRAPHITE POWDER SUITABLE FOR NEGATIVE ELECTRODE MATERIAL OF LITHIUM ION SECONDARY BATTERY 失效
公开(公告)号：JPH11307095A
公开(公告)日：1999-11-05
申请号：JP11100198
申请日：1998-04-21
申请人： SUMITOMO METAL IND , SONY CORP
发明人： MORIGUCHI KOJI , YONEMURA MITSUHARU , KAMEI KAZUTO , ABE MASARU , KAMINAKA HIDEYA , NEGI NORIYUKI , KOMARU TOKUO , NAGAMINE MASAYUKI
IPC分类号： H01M10/05 , C01B31/04 , H01M4/133 , H01M4/58 , H01M4/587 , H01M10/0525 , H01M10/36 , H01M4/02 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To manufacture graphite powder suitable for a negative electrode material of a lithium ion secondary battery providing a high discharge capacity of 320 mAH/g or more. SOLUTION: In the manufacture of this graphite powder, graphite powder containing baron of 0.01 to 5.0 wt.%, having closed structures with end parts of graphite C surface layers closed in a loop-like manner on particle surfaces, having gap surface density between closed structures in the graphite c-axis direction being not less than 100 pc./μm and not more than 1500 pc./μm, and preferably, having d002 of 3650 Å or less, is (1) pulverized at a high speed before or after carbonization into a carbon material, which is graphitized by heat-treating it at a temperature of 1500 deg.C or more, or (2) pulverized before or after carbonization into a carbon material, which is graphitized by heat- treating it at a temperature of 1500 deg.C or more, and then further oxidation-heat- treated and heat-treated at a temperature higher than a heat warpage point in an inert gas.

5. 发明专利

JPH10226506A GRAPHITE POWDER SUITABLE FOR NEGATIVE-ELECTRODE MATERIAL OF LITHIUM SECONDARY BATTERY 失效
公开(公告)号：JPH10226506A
公开(公告)日：1998-08-25
申请号：JP2913997
申请日：1997-02-13
申请人： SUMITOMO METAL IND
发明人： KAMINAKA HIDEYA , MORIGUCHI KOJI , KAMEI KAZUTO , FUJIWARA TORU , ABE MASARU , NEGI NORIYUKI , YONEMURA MITSUHARU
IPC分类号： C01B31/04 , H01M4/58 , H01M10/05 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To produce a graphite powder suitable for the negative-electrode material of a lithium secondary battery enhanced in the service capacity and charge and discharge efficiency at normal temps., with the heavy discharge capacity and low-temp. discharge capacity improved and good in charge and discharge efficiency and cycle life. SOLUTION: A carbon material crushed at a high speed before or after carbonization is thermally graphitized or the carbon material crushed before or after carbonization is thermally graphitized, then further theramally oxidized at 600-800 deg.C and heat-treated at >=800 deg.C in an inert gas to produce the graphite powder having a closed structure with the looped end of the C plane layer closed on the surface, with the density of the gap plane between the closed structures in the C-axis direction of graphite at 100-1500 units/μm, with the average particle diameter at weight cumulative 50% obtained by laser diffraction scattering being 5-35μm and having 75μm maximum particle diameter.

6. 发明专利

JPH10226505A GRAPHITE POWDER FOR LITHIUM SECONDARY BATTERY AND ITS PRODUCTION 失效
公开(公告)号：JPH10226505A
公开(公告)日：1998-08-25
申请号：JP2913897
申请日：1997-02-13
申请人： SUMITOMO METAL IND
发明人： YONEMURA MITSUHARU , MORIGUCHI KOJI , KAMEI KAZUTO , ABE MASARU , NEGI NORIYUKI , KAMINAKA HIDEYA
IPC分类号： C01B31/04 , H01M4/133 , H01M4/58 , H01M10/05 , H01M4/02 , H01M4/04 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To produce a graphite powder from which a lithium secondary battery having a high service capacity of >=330mAh/g is produced and suitable to the negative electrode material of the battery. SOLUTION: A carbon material crushed at a high speed before or after carbonization is heat-treated at >=2500 deg.C and graphitized or the material crushed before or after carbonization is oxidized and heat-treated at 600-800 deg.C after graphitization and then heat-treated at >=800 deg.C in an inert gas to produce a graphite powder having a closed structure with the looped end of a C plane layer closed on the surface, with the density of the gap plane between the closed structures in the C-axis direction of graphite at 100-1500 units/μm and with the interval d002 between (002) lattice planes of the C axis obtained by the precision measurement of the lattice constant by X-ray diffraction being

7. 发明专利

JP2005281850A Copper alloy and method for producing thereof 有权
标题翻译：铜合金及其生产方法
公开(公告)号：JP2005281850A
公开(公告)日：2005-10-13
申请号：JP2004234851
申请日：2004-08-11
申请人： Sumitomo Metal Ind Ltd , 住友金属工業株式会社
发明人： MAEHARA YASUHIRO , YONEMURA MITSUHARU , MAEDA HISASHI , NAKAJIMA TAKAHARU , NAGAMICHI TOKIAKI
IPC分类号： C22F1/08 , B22D21/02 , B22D23/00 , C22C9/00 , C22F1/00
CPC分类号： C22C9/00 , B22D11/004 , B22D21/025 , B22D23/006 , C22F1/002 , C22F1/08
摘要： PROBLEM TO BE SOLVED: To provide a copper alloy which does not comprise elements harmful to the environment such as Be, and has satisfactory various performance such as electric conductivity, tensile strength and high temperature strength. SOLUTION: The copper alloy comprises two or more of Cr, Ti and Zr, the balance being Cu and impurities, wherein the particle diameter (X)(μm) of precipitates and inclusions being present in the alloy and having particle diameter of 1 m or more and the total number (N) (pieces/mm 2 ) of the precipitates and inclusions satisfy the following formula (1): logN≤0.4742+17.629×exp(-0.1133×X). The copper alloy may further comprise Ag, P, Mg or the like in place of a part of Cu. The method comprises cooling a cast piece at a cooling rate of 0.5°C/s or more at least in the temperature range from the temperature immediately after the casting to 450°C. It is desirable that after the cooling, the cast piece is worked in the temperature range of 600°C or lower or is subjected to a heat treatment wherein it is held in the temperature range of 150 to 750°C for 30 s or longer. It is most desirable that the work and the heat treatment are repeated. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供不含Be等环境的元素的铜合金，具有导电性，拉伸强度和耐高温强度等各种性能。解决方案：铜合金包含Cr，Ti和Zr中的两种或多种，余量为Cu和杂质，其中存在于合金中的析出物和夹杂物的粒径（X）（μm）（μm） 1m以上，析出物和夹杂物的总数（N）（件/ mm 2 / SP＆gt;）满足下式（1）：logN≤0.4742+ 17.629×exp（-0.1133×X）。铜合金可以进一步包含Ag，P，Mg等代替一部分Cu。该方法包括至少在从铸造后的温度到450℃的温度范围内以0.5℃/ s以上的冷却速度冷却铸件。理想的是，在冷却之后，将铸件在600℃以下的温度范围内进行加工，或者进行热处理，将其保持在150〜750℃的温度范围内30秒以上。最需要重复工作和热处理。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2001291514A NEGATIVE ELECTRODE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001291514A
公开(公告)日：2001-10-19
申请号：JP2000104833
申请日：2000-04-06
申请人： SUMITOMO METAL IND , MATSUSHITA ELECTRIC IND CO LTD
发明人： YAMAMOTO SUKEYOSHI , NEGI NORIYUKI , OBIKA MOTOHARU , TAKESHITA YUKITERU , YONEMURA MITSUHARU , NITTA YOSHIAKI , SHIMAMURA HARUNARI , OKAMURA KAZUHIRO
IPC分类号： B22F9/10 , H01M4/02 , H01M4/38 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To provide a negative electrode material for a nonaqueous secondary battery which is higher in discharge capacity and superior in cycle life than the negative electrode material consisting of a conventional carbon material. SOLUTION: This is a negative electrode material which consists of Si phase and a Si-containing intermetallic compound phase obtained by casting an alloy molten metal containing one kind or more elements chosen from among group 2A elements and transition elements in thin flakes by a strip casting method or a centrifugal casting method in which a columnar crystal structure occupies 10% more of the alloy cross-sectional area in the length direction of the columnar crystal on the average and in which the average minor axis grain size of the phase of the intermetallic compound except what is crystallized as eutectic in this columnar crystal structure is 100 μm or less.

9. 发明专利

JP2000040619A MAGNETIC RESISTANCE EFFECT FILM 失效
公开(公告)号：JP2000040619A
公开(公告)日：2000-02-08
申请号：JP20794398
申请日：1998-07-23
申请人： SUMITOMO METAL IND
发明人： YONEMURA MITSUHARU , KAMEI KAZUTO , SAWAZAKI TATSUO
IPC分类号： G11B5/39 , H01F10/08 , H01F10/14 , H01F10/32 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic resistance effect film whose resistance change rate is largely improved in a metallic/insulator type granular system magnetic resistance effect film, and an element using the film, and a magnetic head or magnetic field sensor using the element. SOLUTION: When ferromagnetic metal (Fe, Co, Ni, or alloy) is T, and the metallic element (Al, Si, Mg, Hf, Y, Zr, or rare earth element) of the oxide or fluoride of a non-magnetic insulator matrix is M, and a metallic element (one kind of element or more of Tx, V, Cr, Nb, Mo, Ta, or W) to be displaced with one part is Q, the atomic concentration composition of the whole metallic elements contained in a granular film is expressed by Ty(M1-xQx)1-y, and the values of (x) and (y) are respectively 0.05

10. 发明专利

JPH10132714A SILICON WAFER FOR EVALUATING LATTICE STRAIN, PRODUCTION METHOD THEREOF, AND EVALUATION METHOD FOR LATTICE STRAIN 失效
公开(公告)号：JPH10132714A
公开(公告)日：1998-05-22
申请号：JP30737696
申请日：1996-10-31
申请人： SUMITOMO METAL IND
发明人： YONEMURA MITSUHARU , KAMEI KAZUTO
IPC分类号： G01N1/00 , G01N1/28 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To evaluate lattice strain in a thin film sample while taking various crystallographic effect into account by provided a wedge-shaped part where the thickness in the direction vertical to the major surface of an Si water for evaluating lattice strain varies continuously in a rage lower than a specified value thereby controlling the thickness at a part to be measured sufficiently. SOLUTION: The Si wafer for evaluation is machined to have a wedge-shaped part using FIB. In the FIB method, sputtering is performed using a focused Ga ion beam while observing an SIM image. The thickness the direction vertical to the major surface of the Si wafer is varied continuously in the rage from 10nm to 10μm. When the thickness exceeds 10μm, an electron beam does not transmit through the wedge-shaped part and when the thickness is less than 10nm, strain is relaxed excessively to cause difficulties in the measurement. Lattice strain is analyzed by observing variation in the HOLZ pattern obtained by CBED method. According to the method, lattice strain due to variation of film thickness can be measured accurately.

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