专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2007311641A Memory element and memory device 有权
标题翻译：存储元件和存储器件
公开(公告)号：JP2007311641A
公开(公告)日：2007-11-29
申请号：JP2006140481
申请日：2006-05-19
申请人： Sony Corp , ソニー株式会社
发明人： OBA KAZUHIRO , ENDO KEITARO , SONE TAKESHI , NARISAWA KOSUKE
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a memory element in which changes of an action threshold voltage and a resistance value in a high resistance state or a low resistance state are small when repeating writing deletion cycles.
SOLUTION: A storage layer 3 is constituted to be pinched between a first electrode 2 and a second electrode 4. The storage layer 3 is formed by laminating an oxide layer 31 and an ionized layer 32 containing Cu or Ag to be ionized. The oxide layer 31 consists of a rare earth element oxide or a copper oxide. The ionized layer 32 constitutes a memory element 10 containing a nitride of one or more sorts of elements chosen from S, Se and Te.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在重复写入删除循环时其中动作阈值电压和高电阻状态或低电阻状态下的电阻值的变化小的存储元件。解决方案：存储层3被构造成夹在第一电极2和第二电极4之间。存储层3通过层叠氧化物层31和包含待离子化的Cu或Ag的电离层32而形成。氧化物层31由稀土元素氧化物或氧化铜构成。电离层32构成包含选自S，Se和Te中的一种或多种元素的氮化物的存储元件10。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006319264A Method for manufacturing memory element, and method for manufacturing storage device 有权
标题翻译：用于制造存储元件的方法，以及用于制造存储器件的方法
公开(公告)号：JP2006319264A
公开(公告)日：2006-11-24
申请号：JP2005142830
申请日：2005-05-16
申请人： Sony Corp , ソニー株式会社
发明人： OBA KAZUHIRO , HIGO YUTAKA , KUBO SHINYA , NARISAWA KOSUKE
IPC分类号： H01L27/10
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a memory element having proper characteristics by suppressing variation in characteristics such as the threshold voltage in storing/reading/writing information.
SOLUTION: A thin film 2 for memory is sandwiched between a first electrode 1 and a second electrode 4 and the thin film 2 contains a rare earth oxide layer. When a memory element 10 containing any one element selected from Ag, Cu and Zn is manufactured in the thin film 2 for memory or in a layer 3 touching the thin film 2, the thin film 2 for memory is formed by reactive sputtering method.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过抑制存储/读取/写入信息中的阈值电压等特性的变化来制造具有适当特性的存储元件的方法。解决方案：用于存储器的薄膜2夹在第一电极1和第二电极4之间，薄膜2包含稀土氧化物层。当在用于存储器的薄膜2或接触薄膜2的层3中制造包含选自Ag，Cu和Zn中的任何一种元素的存储元件10时，通过反应溅射法形成存储器用薄膜2。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2006040946A Storage element 有权
标题翻译：存储元素
公开(公告)号：JP2006040946A
公开(公告)日：2006-02-09
申请号：JP2004214603
申请日：2004-07-22
申请人： Sony Corp , ソニー株式会社
发明人： ARAYA KATSUHISA , TSUSHIMA TOMOHITO , NARISAWA KOSUKE , OTSUKA WATARU , YATSUNO HIDEO
IPC分类号： H01L27/10
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149 , H01L45/1675
摘要： PROBLEM TO BE SOLVED: To provide a storage element of a structure which can easily be manufactured with high density. SOLUTION: Recording layers 2 and 3 are installed between two electrodes 1 and 4, and potentials different in polarity are applied to the two electrodes 1 and 4. Thus, a memory cell is composed of resistance change elements 10 where resistance values of the recording layers 2 and 3 reversibly change. In a plurality of adjacent memory cells, the storage elements where at least a part of the layers 2 and 3 constituting the recording layers of the resistance change elements 10 is formed by the same layer in common is constituted. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以容易地以高密度制造的结构的存储元件。解决方案：记录层2和3安装在两个电极1和4之间，并且极性不同的电位施加到两个电极1和4上。因此，存储单元由电阻变化元件10组成，其电阻值记录层2和3可逆地改变。在多个相邻的存储单元中，构成了构成电阻变化元件10的记录层的层2和3的至少一部分的存储元件由相同的共同层构成。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2005209251A Initialization method of magnetic memory 有权
标题翻译：磁记忆初始化方法
公开(公告)号：JP2005209251A
公开(公告)日：2005-08-04
申请号：JP2004012287
申请日：2004-01-20
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , HIGO YUTAKA , HOSOMI MASAKATSU , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , SONE TAKESHI , YAMADA NAOMI , YAMAMOTO TETSUYA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide an initialization method of a magnetic memory which can reduce time required for initialization, and also reduce a wave height value of a pulse of a current required for initialization. SOLUTION: A memory layer which holds information by the magnetization status of a magnetic material is provided with a magnetic storage element consisting of a plurality of magnetic layers, and a first wiring and a second wiring which are crossing mutually. The initialization of the magnetic memory is performed by arranging the magnetization status of memory layers of magnetic storage components in the same status by stopping the application of a pulse of a current Iw of a first wiring and a pulse of a current Ib of a second wiring at almost same time instant to a magnetic memory which is formed by arranging the magnetic storage components in the vicinity of an intersection where the first wiring and the second wiring are crossing. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以减少初始化所需的时间的磁存储器的初始化方法，并且还降低初始化所需的电流的脉冲的波高值。解决方案：通过磁性材料的磁化状态保持信息的存储层设置有由多个磁性层组成的磁存储元件以及彼此相交的第一布线和第二布线。磁存储器的初始化是通过停止施加第一布线的电流Iw的脉冲和第二布线的电流Ib的脉冲来布置磁存储组件的存储层的磁化状态处于相同的状态来执行的在与第一布线和第二布线交叉的交点附近布置磁存储部件所形成的磁存储器几乎相同的时刻。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2005142508A Magnetic storage element and magnetic memory 有权
标题翻译：磁存储元件和磁记忆
公开(公告)号：JP2005142508A
公开(公告)日：2005-06-02
申请号：JP2003380210
申请日：2003-11-10
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , ENDO KEITARO , HIGO YUTAKA , HOSOMI MASAKATSU , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , YAMADA NAOMI , YAMAMOTO TETSUYA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element that can be operated stably by securing a wide operating area and, at the same time, can be suppressed in power consumption to a low level, and to provide a magnetic memory.
SOLUTION: The magnetic storage element 1 is constituted by modulating the film thicknesses of nonmagnetic layers 17, 19, 21, 23, and 25 of a storage layer 3 respectively separating the magnetic layers 16, 18, 20, 22, 24, and 26 of the storage layer 3 from each other or the film thicknesses of the magnetic layers 16, 18, 20, 22, 24, and 26, so as to induce 90° antiferromagnetic couplings among the magnetic layers 16, 18, 20, 22, 24, and 26. The magnetic memory has magnetic storage elements 1 thus constituted and first and second wiring intersecting each other. The elements 1 are respectively disposed near the intersections of the first and second wiring.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种可以通过确保宽的操作区域而稳定地操作并且同时可以将功率消耗抑制到低水平并提供磁存储器的磁存储元件。解决方案：磁存储元件1通过分别分别分离磁层16,18,20,22,24的存储层3的非磁性层17,19,21,23和25的膜厚进行调制而构成。和26，或者磁性层16,18,20,22,24和26的膜厚，以便在磁性层16,18,20,22之间引起90°的反铁磁耦合磁存储器具有如此构成的磁存储元件1，第一和第二布线相互交叉。元件1分别设置在第一和第二布线的交叉点附近。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JPH11296824A SUBSTRATE FOR MAGNETORESISTANCE HEAD AND METHOD FOR TESTING THE HEAD THROUGH THE USE OF THIS 失效
公开(公告)号：JPH11296824A
公开(公告)日：1999-10-29
申请号：JP10128198
申请日：1998-04-13
申请人： SONY CORP
发明人： KANEGA KAORU , NARISAWA KOSUKE , YAMAMOTO TETSUYA
IPC分类号： G11B5/39 , G11B5/455
摘要： PROBLEM TO BE SOLVED: To make manageable the characteristic and quality of a head by forming a measuring part for measuring a contact resistor concerning an electrode part and an element part on a substrate plurally forming magnetoresistance heads provided with the electrode part and the element part. SOLUTION: A wafer being the substrate for the magnetoresistance heads forms test patterns for measuring being plural measuring parts with the actual magnetic-resistance effect heads on the same wafer. A test pattern for measuring with an element part 121 is provided with an electrode material 121b being an electrode part and a magnetic-resistance effect film (MR film) 121a being the element part provided in the state of being held by this material 121b inbetween. The material 121b transmitting the variation of an electric resistance rate of the film 121a is formed so as to held this MR film 121a inbetween. A lead 121c transmitting the variation of this electric resistance rate to outside is formed for this material 121b.

7. 发明专利

JPH0798819A MAGNETO-RESISTANCE EFFECT TYPE MAGNETIC HEAD 失效
公开(公告)号：JPH0798819A
公开(公告)日：1995-04-11
申请号：JP24575693
申请日：1993-09-30
申请人： SONY CORP
发明人： SHIBATA TAKUJI , KONDO YUKIO , NARISAWA KOSUKE , ENDO TETSUO
IPC分类号： G11B5/39
摘要： PURPOSE:To evade partial magnetic field concentration in a shield magnetic material, to enhance the stability of the shield magnetic material and to improve bias efficiency. CONSTITUTION:In a current bias type MR head formed so that bias magnetic field is applied to an MR element 4 at least by allowing current to flow through a second conductor 3 arranged so as to be orthogonally crossed with a magnetization difficulty axis direction Y of the MR element 4, a first conductor part 3a (bias magnetic field applying part) applying the bias magnetic field to the MR element 4 in the conductor 3 is arranged so that the magnetic field is applied only on the magnetization difficulty axis direction Y of the shield magnetic materials 5, 6. Then, the conductor part 3c generating the magnetic field opposite to the bias magnetic field in a wiring pattern from the conductor part 3a to a third conductor part 3c (current supply part) connected to the rear end part of the MR element 4 is provided out of the shield magnetic materials 5, 6.

8. 发明专利

JPH0737228A MAGNETO-RESISTANCE EFFECT TYPE THIN-FILM MAGNETIC HEAD 失效
公开(公告)号：JPH0737228A
公开(公告)日：1995-02-07
申请号：JP17868993
申请日：1993-07-20
申请人： SONY CORP
发明人： SATO HITOSHI , SAITO NORIO , NARISAWA KOSUKE
IPC分类号： G11B5/39 , G11B5/48
摘要： PURPOSE:To improve the S/N of reproduced signals and to improve the reliability of servo signals, etc., by decreasing the crosstalk components outputted in superposition on the intrinsic signal components. CONSTITUTION:This magnetic head is constituted by forming the width D1 of the part of a lower shielding magnetic material 2 exposed on a recording medium-facing surface (a) narrower than the width D2 of the part of an upper shielding magnetic material 3 exposed on this recording medium-facing surface (a). More specifically, the width D1 of the lower shielding magnetic material 2 of the part exposed on the recording medium-facing surface (a) is set at the effective track width or above and 4 times the track pitch or below.

9. 发明专利

JPH0573843A THIN-FILM MAGNETIC HEAD AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0573843A
公开(公告)日：1993-03-26
申请号：JP26145491
申请日：1991-09-13
申请人： SONY CORP
发明人： ISHIKAWA OSAMU , NARISAWA KOSUKE
IPC分类号： G11B5/31
摘要： PURPOSE:To enhance the accuracy of a track width even when conductor coils are laminated. CONSTITUTION:Projections 12 consisting of a nonmagnetic material are formed on a substrate 1 in correspondence to the positions where front gaps are constituted and thereafter, lower magnetic materials 3 are so formed on this substrate 1 that the front end sides are formed on the flat parts 12a of the projections 12. Plural layers of the conductor coils 5 are then laminated via insulating layers 8 on the lower magnetic materials 3 and thereafter, a resist layer 18 is formed to cover these conductor coil layers 5. This resist layer 18 is exposed and developed according to the outside shape of an upper layer magnetic body 4.

10. 发明专利

JPH0423214A THIN FILM MAGNETIC HEAD AND ITS MANUFACTURE 失效
公开(公告)号：JPH0423214A
公开(公告)日：1992-01-27
申请号：JP12758790
申请日：1990-05-17
申请人： SONY CORP
发明人： NARISAWA KOSUKE
IPC分类号： G11B5/31
摘要： PURPOSE:To obtain a superior head characteristic and to simplify manufacturing by forming a lower layer magnetic core and the tip part of an upper magnetic core with magnetic material whose magnetic characteristic can be improved by applying annealing, and forming the rear part of the upper magnetic core with the magnetic material not requiring annealing. CONSTITUTION:Magnetic saturation at the tip of a magnetic core in which a magnetic gap (g) is formed can be prevented occurring by comprising a thin film magnetic head 18 by using the magnetic material of high permeability and high saturation flux density in which the annealing is required only for the lower layer magnetic core 14 and the tip part 15A of the upper layer magnetic core 15 easy to saturate, and the head characteristic for overwrite, etc., in a hard disk can be improved. Also, in the manufacturing, since a conductor coil 17, an insulating layer 16, and the rear part 15B of the upper layer magnetic core are formed by wet process after the lower layer magnetic core 12 and the tip part 15A of the upper layer magnetic core are formed by a so-called dry process, a manufacturing process can be simplified.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式