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1. 发明专利

JP2005135495A Recording method for magnetic memory 审中-公开
标题翻译：磁记忆记录方法
公开(公告)号：JP2005135495A
公开(公告)日：2005-05-26
申请号：JP2003369398
申请日：2003-10-29
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , ENDO KEITARO , HIGO YUTAKA , HOSOMI MASAKATSU , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , SONE TAKESHI , YAMADA NAOMI , YAMAMOTO TETSUYA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide the recording method for a magnetic memory by which power consumption for recording information in the memory is reduced.
SOLUTION: A magnetic memory is equipped a memory layer which holds information by the magnetization state of magnetic material and which has a magnetic memory element consisting of magnetic layers of a plurality of layers and has a first wiring and a second wiring intersecting each other, the magnetic memory elements being disposed near intersecting points where the first wiring and the second wiring intersect each other. To the magnetic memory, the impressing of pulses of the current Iw of the first wiring and the impressing of pulses of the current Ib of the second wiring are started at the almost same time.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供用于记录信息在存储器中的功耗降低的磁存储器的记录方法。解决方案：磁存储器配备有存储层，其通过磁性材料的磁化状态保持信息，并且具有由多层的磁性层组成的磁存储元件，并且具有第一布线和与其相交的第二布线另外，磁存储元件设置在第一布线和第二布线彼此相交的交叉点附近。对于磁存储器，第一布线的电流Iw的脉冲的施加和第二布线的电流Ib的脉冲的施加在几乎相同的时间开始。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2005129801A Magnetic storage element and magnetic memory 审中-公开
标题翻译：磁存储元件和磁记忆
公开(公告)号：JP2005129801A
公开(公告)日：2005-05-19
申请号：JP2003365076
申请日：2003-10-24
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , ENDO KEITARO , HIGO YUTAKA , HOSOMI MASAKATSU , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , SONE TAKESHI , YAMADA NAOMI , YAMAMOTO TETSUYA
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element that can stably perform recording actions even when the size of the element is reduced, and to provide a magnetic memory. SOLUTION: The magnetic storage element 1 has a storage layer which holds information based on the magnetized state of a magnetic material and is composed of a plurality of magnetic layers 16 and 18. The element 1 is constituted by disposing a magnetization fixing layer 2 on the storage layer 3 through a nonmagnetic layer 15 and forming the storage layer 3 and magnetization fixing layer 2 in different planar patterns so that the end edge of the layer 3 may be separated from that of the layer 2. The magnetic memory having magnetic storage elements 1 thus constituted and first and second wiring 5 and 6 intersecting each other is constituted by disposing the magnetic storage elements 1 near the intersecting points of the first and second wiring 5 and 6. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供即使当元件的尺寸减小时也可以稳定地执行记录动作的磁存储元件，并且提供磁存储器。解决方案：磁存储元件1具有存储层，其基于磁性材料的磁化状态保存信息，并且由多个磁性层16和18组成。元件1通过设置磁化固定层 2通过非磁性层15在存储层3上形成，并以不同的平面图案形成存储层3和磁化固定层2，使得层3的端边缘可以与层2的端边缘分离。具有磁性的磁存储器通过将磁性存储元件1设置在第一和第二布线5和6的交叉点附近，构成彼此相交的第一和第二布线5,6彼此相连。（C）2005，JPO和NCIPI

3. 发明专利

JP2004087870A Magnetoresistive effect element and magnetic memory device 审中-公开
标题翻译：磁感应元件和磁记忆装置
公开(公告)号：JP2004087870A
公开(公告)日：2004-03-18
申请号：JP2002248002
申请日：2002-08-28
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , HOSOMI MASAKATSU , MIZUGUCHI TETSUYA , OBA KAZUHIRO , HIGO YUTAKA , YAMAMOTO TETSUYA , ENDO KEITARO , KUBO SHINYA , SONE TAKESHI , NARISAWA KOSUKE , KANO HIROSHI
IPC分类号： G11C11/15 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To assure a great margin of selective recording into each memory unit by suppressing variations in inverse magnetic field between the memory units and the deviation of asteroids.
SOLUTION: The magnetoresistive effect element comprises a stacked structure which includes at least two ferromagnetic layers 24 and 26 and an insulation layer 25 interposed between the two ferromagnetic layers 24 and 26, with the ferromagnetic layer 26 serving as a free layer which can inverse its magnetization direction and the ferromagnetic layer 24 serving as a fixed layer with no inversion of magnetization direction. The fixed layer 26 serves as a magnetic field application member for applying a static magnetic field to the free layer 24. For the fixed layer 26 to apply the static magnetic field, the intensity of leakage magnetic field from the fixed layer 26 is set to a prescribed value or above.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：通过抑制存储器单元之间的反向磁场的变化和小行星的偏离来确保选择性地记录到每个存储器单元中的大量余量。解决方案：磁阻效应元件包括堆叠结构，其包括至少两个铁磁层24和26以及介于两个铁磁层24和26之间的绝缘层25，其中铁磁层26用作自由层，其可以与其磁化方向相反，铁磁层24用作不具有磁化方向的反转的固定层。固定层26用作用于向自由层24施加静磁场的磁场施加构件。对于固定层26施加静磁场，来自固定层26的泄漏磁场的强度被设定为规定值以上。版权所有（C）2004，JPO

4. 发明专利

JP2004023015A Magnetoresistive effect element and method of manufacturing the same, and magnetic memory device 审中-公开
公开(公告)号：JP2004023015A
公开(公告)日：2004-01-22
申请号：JP2002179405
申请日：2002-06-20
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , MIZUGUCHI TETSUYA , HOSOMI MASAKATSU , YAMAMOTO TETSUYA , OBA KAZUHIRO , HIGO YUTAKA , KANO HIROSHI , YAMADA NAOMI , KUBO SHINYA , ENDO KEITARO , SONE TAKESHI , NARISAWA KOSUKE
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To ensure a large margin for selective recording on each storage cell by suppressing the dispersion of a reversed magnetic field and the displacement of an asteroid between storage cells.
SOLUTION: A magnetoresistive effect element, comprising a laminated structure composed of at least two ferromagnetic regions 24, 25, 26, and 28 and a nonmagnetic layer 27 interposed between the ferromagnetic areas, wherein the magnetizing directions of the ferromagnetic layers 24, 25, and 26 on one side are fixed; and the magnetizing direction of the ferromagnetic region 28 on the other side is reversed according to the external magnetic field. The ferromagnetic region 26, formed in front of the nonmagnetic layer 27, is composed of laminates 26a and 26b made of two or more different ferromagnetic materials.
COPYRIGHT: (C)2004,JPO

5. 发明专利

JP2003060169A Method for manufacturing magnetic memory and magnetic head 审中-公开
标题翻译：制造磁记忆和磁头的方法
公开(公告)号：JP2003060169A
公开(公告)日：2003-02-28
申请号：JP2001246374
申请日：2001-08-15
申请人： Sony Corp , ソニー株式会社
发明人： KUBO SHINYA , NARISAWA KOSUKE , ENDO KEITARO
IPC分类号： G11B5/39 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To improve the yield in a manufacturing process by preventing a tunnel barrier layer between magnetic layers due to a re-deposition occurring at etching from being short-circuited.
SOLUTION: A method for manufacturing a magnetic memory comprises a step of forming a ferroelectric tunnel junction element pattern 16 larger by one size than a ferroelectric tunnel junction element 18 to be formed by etching a laminated film 15 formed of the element 18 by first etching, a step of forming a first insulating layer 17 at a side periphery of the pattern 16, a step of forming the element 18 by etching a side periphery of the pattern 16 by second etching, and a step of forming an insulating layer 20 on a side periphery of the element 18.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：通过防止由于在蚀刻中发生的再沉积而导致的磁性层之间的隧道势垒层的短路，从而提高制造工艺中的产率。解决方案：一种用于制造磁存储器的方法包括形成铁电隧道结元件图案16的步骤，该铁电隧道结元件图案16比通过第一蚀刻蚀刻由元件18形成的叠层膜15形成的铁电隧道结元件18大一个尺寸，在图案16的侧边缘形成第一绝缘层17的步骤，通过第二蚀刻蚀刻图案16的侧边缘来形成元件18的步骤，以及在侧面上形成绝缘层20的步骤元件18的周边。

6. 发明专利

JP2006319264A Method for manufacturing memory element, and method for manufacturing storage device 有权
标题翻译：用于制造存储元件的方法，以及用于制造存储器件的方法
公开(公告)号：JP2006319264A
公开(公告)日：2006-11-24
申请号：JP2005142830
申请日：2005-05-16
申请人： Sony Corp , ソニー株式会社
发明人： OBA KAZUHIRO , HIGO YUTAKA , KUBO SHINYA , NARISAWA KOSUKE
IPC分类号： H01L27/10
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a memory element having proper characteristics by suppressing variation in characteristics such as the threshold voltage in storing/reading/writing information.
SOLUTION: A thin film 2 for memory is sandwiched between a first electrode 1 and a second electrode 4 and the thin film 2 contains a rare earth oxide layer. When a memory element 10 containing any one element selected from Ag, Cu and Zn is manufactured in the thin film 2 for memory or in a layer 3 touching the thin film 2, the thin film 2 for memory is formed by reactive sputtering method.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种通过抑制存储/读取/写入信息中的阈值电压等特性的变化来制造具有适当特性的存储元件的方法。解决方案：用于存储器的薄膜2夹在第一电极1和第二电极4之间，薄膜2包含稀土氧化物层。当在用于存储器的薄膜2或接触薄膜2的层3中制造包含选自Ag，Cu和Zn中的任何一种元素的存储元件10时，通过反应溅射法形成存储器用薄膜2。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005209251A Initialization method of magnetic memory 有权
标题翻译：磁记忆初始化方法
公开(公告)号：JP2005209251A
公开(公告)日：2005-08-04
申请号：JP2004012287
申请日：2004-01-20
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , HIGO YUTAKA , HOSOMI MASAKATSU , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , SONE TAKESHI , YAMADA NAOMI , YAMAMOTO TETSUYA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide an initialization method of a magnetic memory which can reduce time required for initialization, and also reduce a wave height value of a pulse of a current required for initialization. SOLUTION: A memory layer which holds information by the magnetization status of a magnetic material is provided with a magnetic storage element consisting of a plurality of magnetic layers, and a first wiring and a second wiring which are crossing mutually. The initialization of the magnetic memory is performed by arranging the magnetization status of memory layers of magnetic storage components in the same status by stopping the application of a pulse of a current Iw of a first wiring and a pulse of a current Ib of a second wiring at almost same time instant to a magnetic memory which is formed by arranging the magnetic storage components in the vicinity of an intersection where the first wiring and the second wiring are crossing. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以减少初始化所需的时间的磁存储器的初始化方法，并且还降低初始化所需的电流的脉冲的波高值。解决方案：通过磁性材料的磁化状态保持信息的存储层设置有由多个磁性层组成的磁存储元件以及彼此相交的第一布线和第二布线。磁存储器的初始化是通过停止施加第一布线的电流Iw的脉冲和第二布线的电流Ib的脉冲来布置磁存储组件的存储层的磁化状态处于相同的状态来执行的在与第一布线和第二布线交叉的交点附近布置磁存储部件所形成的磁存储器几乎相同的时刻。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2005142508A Magnetic storage element and magnetic memory 有权
标题翻译：磁存储元件和磁记忆
公开(公告)号：JP2005142508A
公开(公告)日：2005-06-02
申请号：JP2003380210
申请日：2003-11-10
申请人： Sony Corp , ソニー株式会社
发明人： IGARASHI MINORU , BESSHO KAZUHIRO , ENDO KEITARO , HIGO YUTAKA , HOSOMI MASAKATSU , KANO HIROSHI , KUBO SHINYA , MIZUGUCHI TETSUYA , NARISAWA KOSUKE , OBA KAZUHIRO , OMORI HIROYUKI , YAMADA NAOMI , YAMAMOTO TETSUYA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element that can be operated stably by securing a wide operating area and, at the same time, can be suppressed in power consumption to a low level, and to provide a magnetic memory.
SOLUTION: The magnetic storage element 1 is constituted by modulating the film thicknesses of nonmagnetic layers 17, 19, 21, 23, and 25 of a storage layer 3 respectively separating the magnetic layers 16, 18, 20, 22, 24, and 26 of the storage layer 3 from each other or the film thicknesses of the magnetic layers 16, 18, 20, 22, 24, and 26, so as to induce 90° antiferromagnetic couplings among the magnetic layers 16, 18, 20, 22, 24, and 26. The magnetic memory has magnetic storage elements 1 thus constituted and first and second wiring intersecting each other. The elements 1 are respectively disposed near the intersections of the first and second wiring.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种可以通过确保宽的操作区域而稳定地操作并且同时可以将功率消耗抑制到低水平并提供磁存储器的磁存储元件。解决方案：磁存储元件1通过分别分别分离磁层16,18,20,22,24的存储层3的非磁性层17,19,21,23和25的膜厚进行调制而构成。和26，或者磁性层16,18,20,22,24和26的膜厚，以便在磁性层16,18,20,22之间引起90°的反铁磁耦合磁存储器具有如此构成的磁存储元件1，第一和第二布线相互交叉。元件1分别设置在第一和第二布线的交叉点附近。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004319786A Magnetic storage element 有权
公开(公告)号：JP2004319786A
公开(公告)日：2004-11-11
申请号：JP2003112011
申请日：2003-04-16
申请人： Sony Corp , ソニー株式会社
发明人： OMORI HIROYUKI , KUBO SHINYA , IGARASHI MINORU
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic storage element that can improve the selectivity of recording to an element and ensure recording to a target element. SOLUTION: The magnetic storage element 1 is provided with a storage layer 2 to hold an information depending on the magnetization status of a magnetic body, and the storage layer 2 is divided into a plurality of areas 2H and 2L having a different amount of magnetization. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2009283963A Magneto-resistance effect element, magnetic memory element, and magnetic memory device 有权
标题翻译：磁阻效应元件，磁记忆元件和磁记忆装置
公开(公告)号：JP2009283963A
公开(公告)日：2009-12-03
申请号：JP2009170518
申请日：2009-07-21
申请人： Sony Corp , ソニー株式会社
发明人： OBA KAZUHIRO , HAYASHI KAZUHIKO , KANO HIROSHI , BESSHO KAZUHIRO , MIZUGUCHI TETSUYA , HIGO YUTAKA , HOSOMI MASAKATSU , YAMAMOTO TETSUYA , NARISAWA KOSUKE , SONE TAKESHI , ENDO KEITARO , KUBO SHINYA
IPC分类号： H01L43/08 , G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01F41/18 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/10 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C2029/5002 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/302 , H01L43/10 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a magneto-resistance effect element having improved squareness, reduced noise, and stable magnetic property. SOLUTION: The magneto-resistance effect element provided with a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers. The one of the ferromagnetic layers constitutes a free magnetization layer that is composed of a single layer having amorphous structure or a fine crystalline structure, or the main portion thereof is composed of a material layer having amorphous structure or a fine crystalline structure. The free magnetization layer is composed of at least one or more components selected from ferromagnetic elements including Fe, Co and Ni, and 10 atomic% to 30 atomic% of one or more elements selected from B, C, Al, Si, P, Ga, Ge, As, In, Sn, Sb, Tl, Pb and Bi. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有改善的立方度，降低的噪声和稳定的磁性的磁阻效应元件。解决方案：具有铁磁隧道结的磁阻效应元件，其具有夹在至少一对铁磁层之间的隧道势垒层。铁磁层中的一个构成由具有非晶结构或细晶体结构的单层构成的自由磁化层，或者其主要部分由具有无定形结构的材料层或细晶体结构构成。自由磁化层由选自Fe，Co和Ni的铁磁元素和10原子％至30原子％的选自B，C，Al，Si，P，Ga中的一种或多种元素的至少一种或多种组分构成，Ge，As，In，Sn，Sb，Tl，Pb和Bi。版权所有（C）2010，JPO＆INPIT

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