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1. 发明专利

JP2004288844A Magnetic memory element and magnetic storage device using same 审中-公开
公开(公告)号：JP2004288844A
公开(公告)日：2004-10-14
申请号：JP2003078448
申请日：2003-03-20
申请人： Sony Corp , ソニー株式会社
发明人： IWASAKI HIROSHI
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory element and a magnetic storage device using the same, which enable sufficient output voltage and facilitate the reversal of magnetization of a magnetic layer functioning as a memory layer. SOLUTION: The magnetic memory element 10 comprises a first magnetic layer 1 having a fixed magnetization direction, a second magnetic layer 2 having a variable magnetization direction and functioning as a memory carrier, both magnetic layers 1, 2 layered via a non-magnetic conductive layer 4, and a third magnetic layer 3 having a fixed magnetization direction which forms a magnetic tunnel junction with the second magnetic layer. The magnetic memory element 10 is provided with wires connected to the first, second, and third magnetic layers 1, 2, 3, respectively, and the magnetic memory elements 10 are arranged near the intersections of the wires to form the magnetic storage device. COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2000082283A MAGNETIC STORAGE AND ADDRESSING METHOD 失效
公开(公告)号：JP2000082283A
公开(公告)日：2000-03-21
申请号：JP9416599
申请日：1999-03-31
申请人： SONY CORP
发明人： IWASAKI HIROSHI , BESSHO KAZUHIRO
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To realize a required addressing function while canceling a problem accompanying magnetic field use write-in by specifying an optional storage carrier selected as an object of write-in or read-out and using an exchange mutual action propagating through a solid as a means for attaining target operation. SOLUTION: The storage carrier 13 is placed under an effect of a first (y) directional drive line 11, second (y) directional drive line 12 and (x) directional drive line 14 in a memory cell of an exchange connection type solid magnetic memory to be subjected to matrix type addressing. That is, this memory cell controls the magnetization direction M1 of the storage carrier 13 by controlling a current flowing through a first conductive layer 11b constituting the first (y) directional drive line 11, the current flowing through a second conductive layer 12b constituting the second (y) directional drive line 12 and the current flowing through the (x) directional drive line 14, and binary recording is performed by the direction of the magnetization of the storage carrier 13.

3. 发明专利

JPH11111209A POLARIZATION ANALYZER AND ANALYZING DEVICE 失效
公开(公告)号：JPH11111209A
公开(公告)日：1999-04-23
申请号：JP27602397
申请日：1997-10-08
申请人： SONY CORP
发明人： IWASAKI HIROSHI
IPC分类号： G01T1/32 , H01J37/244
摘要： PROBLEM TO BE SOLVED: To attain a polarization measurement with an extreme precision in a short time, by raising an upper limit value of the total taking-in number of dispersed electrons into electron detectors per unit time. SOLUTION: The subject device is composed of a metal target 10, on which an accelerated electron beam to be analyzed are collided, and electron detectors, 1 to 6, by which the electron beam dispersed by the target 10 is counted, and has a form in which polarization of the electron beam to be analyzed is measured, based on a measurement of an angle distribution of the dispersed electron beam, and also has one target 10 and the electron detectors, 1 to 6, the number of which satisfies the relation; n>2×m ((n) is the number of the electron detectors, and (m) is the number of polarized components to be measured).

4. 发明专利

JPH0677051A SOFT MAGNETIC THIN FILM 失效
公开(公告)号：JPH0677051A
公开(公告)日：1994-03-18
申请号：JP1560893
申请日：1993-02-02
申请人： SONY CORP
发明人： IWASAKI HIROSHI
IPC分类号： G11B5/31 , H01F10/14 , H01F10/30 , H01F41/18
摘要： PURPOSE:To contrive the improvement of a reduction in the magnetic characteristics of a soft magnetic thin film, the improvement of the unstableness of the thin film and the improvement of an irregulartiy in the thin film by a method wherein a base film is formed into a Pt film, the crystal grain direction distribution of a metal soft magnetic thin film is formed in almost a symmetrical manner to one axis and the central axis of symmetry is made to coincide with the direction of the normal of the surface of the soft magnetic thin film. CONSTITUTION:A metal soft magnetic film 33 is formed via a base film 32, such as a Pt film and an Au film, and an isotropy of the crystal grain direction distribution of the film 33 within the film surface is performed, whereby even if a material of the comparatively large constant K1 of a crystal magnetic anisotropy is used, the appearance of this in-plane crystal magnetic anisotropy can be regulated. As a result, the strictness of a selection of a magnetic material composition can be relaxed add moreover, the degree of freedom of a selection of the magnetic material composition is increased. Accordingly, the formation of a soft magnetic film of a high saturation magnetic flux density becomes possible with this increase. Moreover, as an X-ray circuit strength distribution on the extreme point drawing of the crystal faces 110 and 200 is specified and a superior isotropic low coercive force is obtained, the soft magnetic thin film can be reliably obtained regardless of an irregularity in adhesion formation conditions and an irregularity in the directions of incidence of film- forming material particles.

5. 发明专利

JPH01152603A OXIDE MAGNETIC THIN FILM 失效
公开(公告)号：JPH01152603A
公开(公告)日：1989-06-15
申请号：JP31083287
申请日：1987-12-10
申请人： SONY CORP
发明人： IWASAKI HIROSHI , MATSUDA HIDEKI , ASO KOICHI
IPC分类号： H01F10/20 , C01G49/00
摘要： PURPOSE:To obtain an oxide magnetic thin film which is superb in the formation of film by using a material where one part of Fe is substituted with vanadium. CONSTITUTION:An oxide magnetic thin film has a composition which is expressed by a general expression COxVyFe3-x-yO4-delta (wherein 0.7

6. 发明专利

JPS6347359A PRODUCTION OF THIN COBALT-FERRITIC SPINEL FILM 失效
公开(公告)号：JPS6347359A
公开(公告)日：1988-02-29
申请号：JP19063986
申请日：1986-08-15
申请人： SONY CORP
发明人： MATSUDA HIDEKI , IWASAKI HIROSHI , KANEKO MASAHIKO , ASO KOICHI
IPC分类号： C23C14/00 , C23C14/08 , C23C14/34
摘要： PURPOSE:To obtain a titled thin spinel film having excellent crystallinity at a relatively low temp. by using an alloy target essentially consisting of Co and Fe and executing sputtering in an oxidation atmosphere. CONSTITUTION:The reactive sputtering is executed in the oxidation atmosphere by using the alloy target essentially consisting of Co and Fe, by which the thin cobalt-ferritic spinel film expressed by CoxFe3-xO (where 0.5

7. 发明专利

JPS62104106A SOFT MAGNETIC THIN FILM 失效
公开(公告)号：JPS62104106A
公开(公告)日：1987-05-14
申请号：JP24456585
申请日：1985-10-31
申请人： SONY CORP
发明人： ISHIKAWA OSAMU , HAYASHI KAZUHIKO , HAYAKAWA MASATOSHI , OCHIAI YOSHITAKA , MATSUDA HIDEKI , IWASAKI HIROSHI , ASO KOICHI
IPC分类号： H01F10/12 , C22C38/00
摘要： PURPOSE:To compose a soft magnetic thin film having high saturation magnetic flux density Bs, small coersive force Hc, high permeability mu, and especially superior abrasion property by specifying the composition of the soft magnetic thin film formed of an Fe(-Co)-Al-Ge alloy added with Cr. CONSTITUTION:This soft magnetic thin film is of the composition represented by a formula, FeaCo6AlcGedCre (wherein a, b, c, d and e show atomic % of the respective composition ratio) and their composition ranges are the values expressed by inequalities, 68

8. 发明专利

JPS6289311A MAGNETICALLY SOFT THIN FILM 失效
公开(公告)号：JPS6289311A
公开(公告)日：1987-04-23
申请号：JP23046785
申请日：1985-10-16
申请人： SONY CORP
发明人： HAYASHI KAZUHIKO , HAYAKAWA MASATOSHI , ISHIKAWA OSAMU , OCHIAI YOSHITAKA , MATSUDA HIDEKI , IWASAKI HIROSHI , ASO KOICHI
IPC分类号： H01F10/14 , C22C38/00 , C22C38/06 , G11B5/31
摘要： PURPOSE:To obtain the titled soft magnetic thin film having a high permeability, an excellent corrosion-resisting property, an excellent abrasion-resisting property of high degree of hardness and thermal stability without lowering the density of saturated magnetic flux and also without increasing magnetic coercive force by a method wherein nitrogen N is added to the magnetic thin film having Fe, Al and Ge as the main components, and the composition of component of the magnetic thin film is specified. CONSTITUTION:The composition of the titled soft magnetic thin film is indicated by the formula of FeaAlbGecNx (provided that the compositional ratio of a, b, c and x is indicated by atom%), each compositional range is 55

9. 发明专利

JPS6129105A Magnetic alloy thin film 失效
标题翻译：磁合金薄膜
公开(公告)号：JPS6129105A
公开(公告)日：1986-02-10
申请号：JP15042984
申请日：1984-07-19
申请人： Sony Corp
发明人： HAYAKAWA MASATOSHI , ASO KOICHI , OCHIAI YOSHITAKA , MATSUDA HIDEKI , HAYASHI KAZUHIKO , ISHIKAWA OSAMU , IWASAKI HIROSHI
IPC分类号： G11B5/147 , G11B5/31 , H01F10/00 , H01F10/14 , H01F10/32
CPC分类号： B82Y25/00 , G11B5/31 , H01F10/142 , H01F10/32 , Y10S428/928 , Y10T428/115 , Y10T428/12465 , Y10T428/12597 , Y10T428/12931 , Y10T428/12937 , Y10T428/12944 , Y10T428/12951 , Y10T428/12958
摘要： PURPOSE:To enhance saturated magnetic flux density and magnetic permeability by directly laminating the Fe-Si alloy thin film of high saturated magnetic flux density on a Fe-Al-Si or Fe-Ni alloy thin film having high magnetic permeability. CONSTITUTION:A Fe-Al-Si alloy is accumulated in the thickness of 4mum by a high frequency sputtering method on a substrate made of crystallized glass optically polished on the surface. A Si-Fe alloy is accumulated in the thickness of 1mum by a sputtering method on the alloy. The laminated magnetic alloy thin film is annealed at 500 deg. in vacuum for 1hr. Thus, a magnetic alloy thin film which has not only high saturated magnetic flux density but high magnetic permeability can be obtained. Accordingly, when the thin film is used as a core material of a magnetic head, recording and reproducing characteristics can be largely improved.
摘要翻译：目的：通过在高磁导率的Fe-Al-Si或Fe-Ni合金薄膜上直接层叠高饱和磁通密度的Fe-Si合金薄膜，提高饱和磁通密度和磁导率。构成：通过高频溅射法在由表面光学抛光的结晶玻璃制成的基板上堆积4μm厚的Fe-Al-Si合金。通过合金上的溅射法将Si-Fe合金以1um的厚度累积。层叠磁性合金薄膜在500度退火。在真空中1小时。因此，可以获得不仅具有高的饱和磁通密度但是磁导率高的磁性合金薄膜。因此，当使用薄膜作为磁头的芯材时，可以大大提高记录和再现特性。

10. 发明专利

JP2008009061A Backlight device and transmission type display device having the same 有权
标题翻译：背光装置和具有它的透射型显示装置
公开(公告)号：JP2008009061A
公开(公告)日：2008-01-17
申请号：JP2006178327
申请日：2006-06-28
申请人： Sony Corp , ソニー株式会社
发明人： IWASAKI HIROSHI , OKUYAMA KENTARO , TSUBO RIE , SATO HARUMI
IPC分类号： G02F1/13357 , G02F1/13
摘要： PROBLEM TO BE SOLVED: To provide a backlight device capable of improving characteristics at the time of wide/narrow viewing angle modes by enlarging an angular range in which a light intensity distribution is drastically changed. SOLUTION: The transmission type display device 1A is provided with: a back surface light source 3A; a light control element 4A which is arranged on the light emission side of the back surface light source 3A and includes a dispersed liquid crystal material layer 4a capable of electrically switching a transparent state and a cloudy state; and a lens sheet 5A which is arranged on the light emission side of the light control element 4A and has a plurality of lenses 5L one-dimensionally or two-dimensionally arranged on at least one side surface of the lens sheet. Since the lens sheet 5A is disposed on the light emission side of the light control element 4A, the light intensity distribution at the time of the wide viewing angle mode and the light intensity distribution at the time of the narrow viewing angle mode can be changed drastically and the characteristics upon the wide/narrow viewing angle modes can be improved as compared with those in a light control element single body. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够通过放大光强度分布急剧变化的角度范围来提高宽/窄视角模式时的特性的背光装置。
解决方案：透射型显示装置1A设置有：背面光源3A; 配置在背面光源3A的发光侧的光控制元件4A，具有能够进行电气切换透明状态和混浊状态的分散液晶材料层4a; 以及布置在光控制元件4A的发光侧的透镜片5A，并且在透镜片的至少一个侧表面上一维或二维地设置多个透镜5L。由于透镜片5A配置在光控制元件4A的发光侧，因此宽视角模式时的光强度分布和窄视角模式时的光强度分布可以大幅度地变化与光控制元件单体中的相比，可以提高宽/窄视角模式下的特性。版权所有（C）2008，JPO＆INPIT

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