专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2015002281A 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド有权
标题翻译：存储元件，存储器件，存储元件和磁头的制造方法
公开(公告)号：JP2015002281A
公开(公告)日：2015-01-05
申请号：JP2013126388
申请日：2013-06-17
申请人：ソニー株式会社 , Sony Corp
发明人： OMORI HIROYUKI , HOSOMI MASAKATSU , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , G11B5/39 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08
摘要：【課題】トンネルバリア層とスピンバリア層の二つの酸化物膜を有する記憶素子において、保持特性の低下や記録電流の上昇を抑えながら、素子抵抗を下げ、低い書き込み電圧、および大きな磁気抵抗変化が得られるようにする。【解決手段】記憶素子は、膜面に垂直な磁化を有し、情報に対応して磁化の向きが変化される記憶層と、記憶層に記憶された情報の基準となる膜面に垂直な磁化を有する磁化固定層と、記憶層と磁化固定層の間に設けられる酸化物によるトンネルバリア層と、記憶層のトンネルバリア層に接する面とは反対側の面に接して設けられる酸化物によるスピンバリア層とを有する。そして所定の設定膜厚値で形成されるスピンバリア層内には、その一部に低抵抗領域が形成されているようにする。【選択図】図3
摘要翻译：要解决的问题：为了提供具有隧道势垒层和自旋阻挡层的两个氧化物膜的存储元件，其在抑制保持特性的劣化和记录电流的增加的同时降低元件电阻，由此实现低写入电压和大的磁阻变化。解决方案：存储元件包括：具有垂直于膜表面的磁化和对应于信息变化的磁化方向的记录层; 具有垂直于膜表面的磁化的磁化固定层作为存储在记录层中的信息的参考; 隧道势垒层，设置在记录层和磁化固定层之间，由氧化物形成; 以及与所述记录层的表面接触设置的自旋阻挡层，所述自旋势垒层位于与所述隧道势垒层接触的表面的相反侧，并且由氧化物形成。在以预定的设定膜厚度值形成的自旋阻挡层的一部分处形成低电阻区域。

2. 发明专利

JP2014072392A Storage element, storage device, magnetic head 有权
标题翻译：存储元件，存储设备，磁头
公开(公告)号：JP2014072392A
公开(公告)日：2014-04-21
申请号：JP2012217702
申请日：2012-09-28
申请人： Sony Corp , ソニー株式会社
发明人： YAMANE KAZUAKI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , ASAYAMA TETSUYA , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , G11B5/39 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11B5/3146 , B82Y25/00 , G11B5/1278 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L23/528 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To promote large storage capacity of a storage device while enhancing the operation stability thereof, by enhancing thermal stability of STT-MRAM storage elements furthermore, and allowing further miniaturization of the storage elements.SOLUTION: In an STT-MRAM storage element having a multi-layered ferri-pin structure where a magnetization fixed layer consists of a ferromagnetic layer and a non-ferromagnetic layer of at least two layers, the magnetic material in contact with an insulating layer in the magnetization fixed layer is composed of a CoFeB magnetic layer, the magnetic material not in contact with an insulating layer in the magnetization fixed layer is an alloy or a lamination structure using at least one kind of Pt group metal elements and ferromagnetic 3d transition metal elements out of 3d transition metal elements, respectively. Atomic concentration of the Pt group metal element is lower than that of the ferromagnetic 3d transition metal element. Consequently, multi-layered ferri-bonding strength is enhanced, and thermal stability of the storage element can be enhanced.
摘要翻译：要解决的问题：通过进一步提高STT-MRAM存储元件的热稳定性，并提高存储元件的进一步小型化，提高存储装置的大容量化，同时提高其运行稳定性。解决方案：在STT-MRAM存储具有多层铁引脚结构的元件，其中磁化固定层由至少两层的铁磁层和非铁磁层组成，与磁化固定层中的绝缘层接触的磁性材料由 CoFeB磁性层，不与磁化固定层中的绝缘层接触的磁性材料是分别使用3d过渡金属元素中的至少一种Pt族金属元素和铁磁性3d过渡金属元素的合金或层压结构。 Pt族金属元素的原子浓度低于铁磁性3d过渡金属元素的原子浓度。因此，提高了多层铁结合强度，并且可以提高存储元件的热稳定性。

3. 发明专利

JP2013175258A Multi-level memory, multi-level memory writing method, and multi-level memory reading method 审中-公开
标题翻译：多层存储器，多级存储器写入方法和多级存储器读取方法
公开(公告)号：JP2013175258A
公开(公告)日：2013-09-05
申请号：JP2012039947
申请日：2012-02-27
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , ASAYAMA TETSUYA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： G11C16/02
CPC分类号： G06F3/0661 , G06F3/0614 , G06F3/0688 , G06F12/0246 , G06F2003/0695 , G06F2212/7208 , G11C7/1006 , G11C11/56 , G11C11/5628 , G11C11/5642 , G11C2211/5647
摘要： PROBLEM TO BE SOLVED: To reduce the number of times data with large write energy is written, which is unfavorable for the number of times a multi-level memory can be rewritten.SOLUTION: A multi-level memory includes a memory array unit including a plurality of memory cells each of which can store data values of two or more bits. The multi-level memory further includes a memory controller configured to perform: conversion in accordance with write data in the memory array unit by use of a conversion rule for converting a specific data value among the data values written in one memory cell into a data value other than the specific data value; and processing of writing the converted write data and a conversion rule identifier, which indicates the conversion rule of the conversion, into the memory array.
摘要翻译：要解决的问题：为了减少写入大量写入能量的数据，这对于可以重写多级存储器的次数是不利的。解决方案：多级存储器包括存储器阵列单元，其包括多个存储单元，每个存储单元可以存储两个或多个位的数据值。多级存储器还包括存储器控制器，其被配置为执行：根据用于将写入一个存储器单元的数据值中的特定数据值转换成数据值的转换规则，根据存储器阵列单元中的写入数据进行转换除特定数据值外; 以及将转换的写入数据写入的处理和将转换的转换规则指示到存储器阵列中的转换规则标识符。

4. 发明专利

JP2013115301A Memory element and memory device 有权
标题翻译：存储元件和存储器件
公开(公告)号：JP2013115301A
公开(公告)日：2013-06-10
申请号：JP2011261522
申请日：2011-11-30
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , ASAYAMA TETSUYA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , G11B5/39 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L27/228 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a memory element and a memory device which can be operated by less current and in a high speed.SOLUTION: A memory element at least includes: a memory layer 14; a magnetization fixed layer 12; an intermediate layer 13 made of nonmagnetic material which is disposed between the memory layer 14 and the magnetization fixed layer 12; and a cap layer 15. In the memory layer, a first ferromagnetic layer 14i and a second ferromagnetic layer 14p are magnetically coupled to each other via a coupling layer 14c. The first ferromagnetic layer is in contact with the intermediate layer, the second ferromagnetic layer is in contact with the cap layer, one of the first ferromagnetic layer and the second ferromagnetic layer is an in-plane magnetization layer in which in-plane magnetization is dominant, and the other one is a perpendicular magnetization layer in which perpendicular magnetization is dominant, and each magnetization direction in the first ferromagnetic layer and the second ferromagnetic layer is inclined from a direction perpendicular to a film surface. Since the magnetization direction in the memory layer is inclined, amplitude increase in precession of the magnetization in the ferromagnetic layers begins promptly when a current in a direction perpendicular to the film surface is flowed into the memory element, thereby enabling inversion operation in a short time.
摘要翻译：要解决的问题：提供可以通过较少电流和高速度操作的存储元件和存储器件。存储元件至少包括：存储层14; 磁化固定层12; 设置在存储层14和磁化固定层12之间的由非磁性材料制成的中间层13; 和盖层15.在存储层中，第一铁磁层14i和第二铁磁层14p经由耦合层14c彼此磁耦合。第一铁磁层与中间层接触，第二铁磁层与盖层接触，第一铁磁层和第二铁磁层中的一个是面内磁化层，其中面内磁化是主要的另一个是垂直磁化层，其中垂直磁化是主导的，并且第一铁磁层和第二铁磁层中的每个磁化方向从垂直于膜表面的方向倾斜。由于存储层中的磁化方向倾斜，当垂直于膜表面的方向上的电流流入存储元件时，铁磁层中的磁化强度的振幅增加迅速地开始，从而使得能够在短时间内进行反转操作。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013114441A Non-volatile cache memory, processing method of non-volatile cache memory, and computer system 有权
标题翻译：非易失性高速缓存存储器，非易失性高速缓存存储器的处理方法和计算机系统
公开(公告)号：JP2013114441A
公开(公告)日：2013-06-10
申请号：JP2011259796
申请日：2011-11-29
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , ASAYAMA TETSUYA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： G06F12/08 , G06F12/16
CPC分类号： G06F12/0246 , G06F11/1064 , G06F11/1441 , G06F11/1666 , G06F12/0895 , G06F2212/222
摘要： PROBLEM TO BE SOLVED: To enhance credibility of data stored in a power interrupted state when a non-volatile memory is used as a cache memory.SOLUTION: A non-volatile memory is used for storing cache data. In this case, as a preparation for a situation of power supply interruption, standby preparation processing is performed by generating standby state data and storing the standby state data in the non-volatile memory unit. Also, at a restart of power supply, restoration processing is performed on cache data stored in the non-volatile memory unit by using the standby state data.
摘要翻译：要解决的问题：当非易失性存储器用作高速缓冲存储器时，为了增强存储在电力中断状态下的数据的可信度。解决方案：非易失性存储器用于存储缓存数据。在这种情况下，作为电源中断的情况的准备，通过产生待机状态数据并将待机状态数据存储在非易失性存储单元中来进行备用准备处理。此外，在重新启动电源时，通过使用待机状态数据对存储在非易失性存储器单元中的高速缓存数据进行恢复处理。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012243933A Storage element and storage device 有权
标题翻译：存储元件和存储设备
公开(公告)号：JP2012243933A
公开(公告)日：2012-12-10
申请号：JP2011112219
申请日：2011-05-19
申请人： Sony Corp , ソニー株式会社
发明人： OMORI HIROYUKI , HOSOMI MASAKATSU , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE KAZUAKI , UCHIDA HIROYUKI , ASAYAMA TETSUYA
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , G11C11/161 , H01L43/02 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a storage element which has a high coercive force and can improve thermal stability without increasing a write current.SOLUTION: A storage element comprises: a storage layer holding information by a magnetization state of a magnetic substance; a magnetization fixed layer having magnetization which serves as reference for information stored in the storage layer; an intermediate layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer; a magnetic coupling layer provided on the opposite side to the intermediate layer; and a high coercive force layer provided adjacent to the magnetic coupling layer. The storage element stores information by inverting magnetization of the storage layer by utilizing spin torque magnetization reversal occurring in association with a current flowing in a lamination direction of a layer structure having the storage layer, the intermediate layer and the magnetization fixed layer, and the magnetization coupling layer is composed of a laminate structure of two layers.
摘要翻译：要解决的问题：提供具有高矫顽力的存储元件，并且可以在不增加写入电流的情况下提高热稳定性。解决方案：存储元件包括：通过磁性物质的磁化状态保持信息的存储层; 具有作为存储在存储层中的信息的参考的磁化的磁化固定层; 设置在所述存储层和所述磁化固定层之间的非磁性物质的中间层; 设置在与中间层相反的一侧的磁耦合层; 以及设置在磁耦合层附近的高矫顽力层。存储元件通过利用与具有存储层，中间层和磁化固定层的层结构的层叠方向上流动的电流相关联的自旋转矩磁化反转以及磁化强度来反转存储层的磁化来存储信息耦合层由两层的层压结构组成。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012199755A Microcomputer peripheral device, initial setting method, and semiconductor integrated device 审中-公开
标题翻译：微型计算机外围设备，初始设置方法和半导体集成器件
公开(公告)号：JP2012199755A
公开(公告)日：2012-10-18
申请号：JP2011062227
申请日：2011-03-22
申请人： Sony Corp , ソニー株式会社
发明人： ASAYAMA TETSUYA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： H03K3/356 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H03K3/037
摘要： PROBLEM TO BE SOLVED: To perform high speed activation of a microcomputer peripheral device in a semiconductor integrated circuit device.SOLUTION: A microcomputer peripheral device outputs a setting signal based on an initial setting command, which is received from a microcomputer, to a functional circuit part through registers and conducts the initial setting. The data of the setting signal in the registers is stored in a holding circuit using a nonvolatile memory element such as an MTJ element. When a power source is turned on again, the initial setting is conducted by using the data of the setting signal which is stored in the holding circuit.
摘要翻译：要解决的问题：在半导体集成电路装置中执行微型计算机外围设备的高速激活。解决方案：微机外围设备通过寄存器将基于从微计算机接收的初始设置命令的设置信号输出到功能电路部分，并进行初始设置。寄存器中的设置信号的数据使用诸如MTJ元件的非易失性存储元件存储在保持电路中。当再次接通电源时，通过使用存储在保持电路中的设置信号的数据来进行初始设置。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012133829A Memory device, and write-in control method 审中-公开
标题翻译：存储器件和写入控制方法
公开(公告)号：JP2012133829A
公开(公告)日：2012-07-12
申请号：JP2010282820
申请日：2010-12-20
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , YAMANE KAZUAKI , UCHIDA HIROYUKI , ASAYAMA TETSUYA
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/1677 , G11C11/161 , G11C11/1675 , G11C19/00
摘要： PROBLEM TO BE SOLVED: To make information to be stored in a memory element while preventing destruction of the memory element in ST-MRAM, and also to improve write-in speed.SOLUTION: A plurality of pairs of memory blocks 1-1 and 1-2 and write-in control units 51-1 and 51-2 with respect thereto are provided, and such write-in control is independently performed that: information to be written into each memory element of the memory block 1-1 or 1-2 paired with the write-in control unit 51-1 or 51-2 is stored in a shift register 52; one information is output to the memory block 1-1 or 1-2 from the shift register 52; success or failure in the write-in of output information is determined, and when the failed write-in is determined, the same information is again output to the memory block 1-1 or 1-2, and when the succeeded write-in is determined, an address value is increased for selecting the memory element forming the write-in possible state in the memory block 1-1 or 1-2, and also next information is output to the memory block 1-1 or 1-2 from the shift register 52.
摘要翻译：要解决的问题：使信息存储在存储元件中，同时防止ST-MRAM中的存储元件的破坏，并且还提高写入速度。解决方案：提供多对存储块1-1和1-2以及相对于其的写入控制单元51-1和51-2，并且这种写入控制被独立地执行：信息被写入与写入控制单元51-1或51-2配对的存储块1-1或1-2的每个存储元件被存储在移位寄存器52中; 一个信息从移位寄存器52输出到存储块1-1或1-2; 确定输出信息的写入成功或失败，并且当确定失败的写入时，相同的信息再次输出到存储器块1-1或1-2，并且当成功的写入是确定了增加存储块1-1或1-2中形成写入可能状态的存储元件的地址值，并且下一个信息从存储块1-1或1-2输出到存储器块1-1或1-2中移位寄存器52.版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012059879A Storage element and memory unit 有权
标题翻译：存储元件和存储单元
公开(公告)号：JP2012059879A
公开(公告)日：2012-03-22
申请号：JP2010200984
申请日：2010-09-08
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide a storage element and a memory unit which improve heat stability and reduce a write current.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17, an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15, and a cap layer 18 provided on a face of the storage layer 17 on the side opposite to the insulation layer 16 side. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. At least a face of the cap layer 18 contacting the storage layer 17 is formed of a Ta film.
摘要翻译：要解决的问题：提供一种提高热稳定性并减少写入电流的存储元件和存储单元。解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在存储层17，设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16以及设置在与绝缘层16侧相反的一侧的存储层17的表面上的盖层18 。信息由存储层17的磁化方向记录，通过在层叠方向注入电子自旋极化而变化。这里，施加到存储层17的有效抗磁场的大小被调整为小于存储层17的饱和磁化强度的大小。至少形成了与存储层17接触的盖层18的表面的电影。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012059878A Storage element and memory unit 审中-公开
标题翻译：存储元件和存储单元
公开(公告)号：JP2012059878A
公开(公告)日：2012-03-22
申请号：JP2010200983
申请日：2010-09-08
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide a spin injection type magnetic memory that improves heat stability and reduces a write current.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17 and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. Each of the storage layer 17 and the magnetization fixed layer 15 has a film thickness so as to make interface magnetic anisotropy energy larger than diamagnetic field energy.
摘要翻译：要解决的问题：提供一种提高热稳定性并降低写入电流的自旋注入型磁性存储器。解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在存储层17和设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16.信息由存储层17的磁化方向记录，通过在层叠方向上注入电子自旋极化而变化。这里，施加到存储层17的有效抗磁场的大小被调节为小于存储层17的饱和磁化强度的大小。存储层17和磁化固定层15中的每一个具有膜厚度以使界面磁各向异性能量大于抗磁场能量。版权所有（C）2012，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式