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1. 发明专利

JPH03153876A SILICON CARBIDE MEMBER 失效
公开(公告)号：JPH03153876A
公开(公告)日：1991-07-01
申请号：JP29306689
申请日：1989-11-10
申请人： SHINETSU CHEMICAL CO
发明人： MADONO TAKATSUGU , HAYASHI NORIO , MATSUMOTO FUKUJI
IPC分类号： C04B35/565 , C04B41/52 , C04B41/89 , C23C16/32 , C23C16/34 , H01L21/22 , H01L21/477
摘要： PURPOSE:To improve the adhesion of a base body and an SiC film at the time of forming the SiC films on the surface of parts contg. free Si and consisting of SiC as a base body at the time of a heat treatment of semiconductors by forming the SiC films in which the free Si content decreases gradually toward the surface by a CVD method between the surface of the above-mentioned parts and the SiC film. CONSTITUTION:The SiC-Si layer 2 contg. 10% free Si is formed by the CVD method on the surface of the SiC base body 1 contg. 20% free Si as the parts for treating the semiconductors at 10 to l00mum thickness, then the SiC-Si layer 3 contg. 5% free Si is formed thereon at 10 to 100mum thickness and further, the SiC layer 4 contg. no free Si at all is formed on the extreme surface at 10 to 300mum thickness, by which the SiC layers of 100 to 300mum total thickness are provided thereon in order to prevent the contamination of the semiconductors by the diffusion of impurities from the inside of the parts at the time of using the SiC to produce the parts, such as wafer boats, to be used when the semiconductor is heat treated at a high temp. The SiC parts having the SiC films which do not peel from the base material 1 or crack and having a long life are produced.

2. 发明专利

JPH01282153A SILICON CARBIDE-BASED REACTION TUBE 失效
公开(公告)号：JPH01282153A
公开(公告)日：1989-11-14
申请号：JP10921288
申请日：1988-05-06
申请人： SHINETSU CHEMICAL CO
发明人： MATSUMOTO FUKUJI , HAYASHI NORIO , TAWARA YOSHIO
IPC分类号： C04B35/565 , C04B35/56 , C04B41/87 , H01L21/22
摘要： PURPOSE:To provide the title reaction tube for a diffusion furnace for the heat treatment of a semiconductor without causing defects due to impurities in the semiconductor by forming the layer of high-purity silicon carbide having a specified thickness on the whole inner surface of the reaction tube consisting of reaction-sintered silicon carbide. CONSTITUTION:A silicon carbide coating film is deposited by vapor-phase synthesis, etc., on the whole inner surface of the reaction tube consisting of reaction sintered silicon carbide, and the layer of high purity silicon carbide having 0.5-2mm thickness is formed. In addition, when the silicon carbide layer is formed by vapor-phase synthesis, Si is previously removed from the inner surface of the reaction tube, and an Si-free layer is preferably formed. The obtained silicon carbide-based reaction tube is not deformed or devitrified even under high-temp. conditions. When a semiconductor is heat-treated in a diffusion furnace by using the reaction tube, the yield in the production of semiconductors can be improved without causing defects due to the presence of impurities in a silicon wafer.

3. 发明专利

JP2003156288A CRUCIBLE FOR MELTING OF RARE EARTH ALLOY AND RARE EARTH ALLOY 审中-公开
公开(公告)号：JP2003156288A
公开(公告)日：2003-05-30
申请号：JP2001351583
申请日：2001-11-16
申请人： SHINETSU CHEMICAL CO
发明人： HASHIMOTO TAKAHIRO , MATSUMOTO FUKUJI , MINOWA TAKEHISA
IPC分类号： C04B35/101 , C04B35/50 , C22C38/00 , F27B14/10
摘要： PROBLEM TO BE SOLVED: To provide a crucible for melting of rare earth alloy capable of easily removing produced slag, free to repeatedly use and inexpensive. SOLUTION: This crucible for melting of rare earth alloy constituted by containing one or more than two kinds of rare earth oxides containing Y2 O3 selected from them and Al2 O3 as its main components is constituted by baking itself at 500-1,800 deg.C, distributing the rare earth oxides at a higher rate at a particulate part of not more than 0.5 mm than a coarse grain part exceeding a grain diameter 0.5 mm and not materially containing a reaction product of the rare earth oxides and Al2 O3 .

4. 发明专利

JPH06128036A SILICON CARBIDE PART FOR SEMICONDUCTOR 失效
公开(公告)号：JPH06128036A
公开(公告)日：1994-05-10
申请号：JP30482692
申请日：1992-10-16
申请人： SHINETSU CHEMICAL CO
发明人： MATSUMOTO FUKUJI , MAEDA TAKAO
IPC分类号： C04B35/565 , C04B35/58 , H01L21/22
摘要： PURPOSE:To enable the stable removal of impurities from the surface of a silicon carbide part and the cleaning of the surface at a high level by mechanically grinding the surface of a silicon carbide part under specific condition. CONSTITUTION:A silicon carbide part for semiconductor, e.g. a vertical boat made of silicon carbide, is produced by mechanically grinding >=75% of the total surface area of the part to a surface roughness Rmax of

5. 发明专利

JPH0677310A WASHING METHOD FOR SILICON CARBIDE MEMBER 失效
公开(公告)号：JPH0677310A
公开(公告)日：1994-03-18
申请号：JP25207692
申请日：1992-08-27
申请人： SHINETSU CHEMICAL CO
发明人： MATSUMOTO FUKUJI , FUJIMA YOSHIHIKO
IPC分类号： B08B5/00 , H01L21/22 , H01L21/673 , H01L21/68
摘要： PURPOSE:To make it possible to wash in a short time and with a high washing degree by performing dry type hydrochloride gas washing for a silicon carbide member for producing semiconductors, then reducing pressure, removing a residual gas in the system, and performing oxygen gas flow washing. CONSTITUTION:Wet washing is performed by immersing a silicon carbide member into a 5 to 10% hydrofluoric acid solution for 60 to 120 minutes. Then, it is taken out from said solution and acid is fully removed by fully rinsing it with pure water, and natural drying is performed. When performing dry type washing for a dried silicon carbide member, the silicon carbide member is set in a diffusion furnace and heating is started. Then, after reaching a predetermined temperature, dry hydrochloride gas washing is performed in which oxygen gas and hydrochloride gas flow. Thereafter, the pressure is reduced in the system, hydrochloride gas is applied, the pressure is reduced again and the residual gas in the system is removed. Then, oxygen gas flow washing is performed and dry washing is completed. By doing this, the washing can be performed in a short time with a high degree of washing.

6. 发明专利

JPH04169203A MANUFACTURE OF CERAMIC TUBE 失效
公开(公告)号：JPH04169203A
公开(公告)日：1992-06-17
申请号：JP29647690
申请日：1990-11-01
申请人： SHINETSU CHEMICAL CO
发明人： MATSUMOTO FUKUJI , YAMADA TORU , HAMAYA NORIAKI
IPC分类号： C04B35/00 , B28B11/12 , B28B21/00
摘要： PURPOSE:To suppress the generation of deformation in a baking process and a sintering process by forming ring-shape thick-walled parts to both end parts in the axial direction of the outer peripheral surface of a cylindrical molded body along the peripheral direction at the time of molding. CONSTITUTION:A raw material powder with which a binder is mixed if necessary is molded to form a cylindrical molded body 1 having ring-shape thick- walled parts 22 formed to both end parts in the axial direction of the outer peripheral surface thereof. At this time, the cylindrical molded body having wall thickness larger than a desired dimension is molded and, thereafter, the outer peripheral surface of the part of a tube main body 3 is subjected to cutting processing so as to leave the thick-walled parts 22 at both end parts. Next, the molded body 1 is usually heated at about 400-1000 deg.C to perform a primary baking process decomposing the binder to properly cure the molded body and the obtained baked body is sintered. In this primary baking process and the sintering process, dimensional accuracy can be well held by the action of the ring-shape thick-walled parts 22 without generating deformation such as collapse.

7. 发明专利

JPH03130366A APPARATUS FOR PRODUCING SILICON CARBIDE FILM 失效
公开(公告)号：JPH03130366A
公开(公告)日：1991-06-04
申请号：JP26753989
申请日：1989-10-13
申请人： SHINETSU CHEMICAL CO
发明人： MADONO JIYUNJI , HAYASHI NORIO , FUJIMA YOSHIHIKO , MATSUMOTO FUKUJI
IPC分类号： C04B35/565 , C04B35/56 , C23C16/32 , C23C16/44 , C23C16/46 , H01L21/205 , H01L21/31
摘要： PURPOSE:To allow film formation with excellent uniformity and homogeneity with the apparatus for forming the high purity silicon carbide film by chemical vapor deposition on the inside surface of a cylindrical work by adopting the constitution to prevent the distance between a heating section and a gas introducing section from changing. CONSTITUTION:A base body 31 is housed in a reaction tube 17 and the tube 17 is capped, then the inside of the tube is reduced in pressure at the time of forming the high purity silicon carbide film on the inside surface of the cylindrical silicon carbide film base body (work) 31 of the reaction tube for a semiconductor diffusion furnace. A water cooled induction coil 26 is then energized to heat the lower part of the base body 31 to a band shape and gaseous raw materials contg. a carbon source and silicon source are supplied to the band-shaped heating region mentioned above through a gas supplying pipe 28. The silicon carbide film is then deposited by evaporation on the lower part in the base body 31. The tube 17 is lowered by operating a reduction motor 3 in this state and the film formation is executed while the band-shaped reaction region supplied with the gaseous raw materials is moved from the bottom end to the top end of the base body 31. Since the coil 26 and the supplying pipe 28 are fixed with this device, the distance between both does not change at the time of the film formation.

8. 发明专利

JPH0196065A PRODUCTION OF HIGH-PURITY SILICON CARBIDE SINTERED BODY 失效
公开(公告)号：JPH0196065A
公开(公告)日：1989-04-14
申请号：JP25505987
申请日：1987-10-09
申请人： SHINETSU CHEMICAL CO
发明人： WATANABE HIROYUKI , ENOMOTO YOSHIHIRO , HAYASHI NORIO , MATSUMOTO FUKUJI , MOTOMIYA TATSUHIKO
IPC分类号： C04B35/573 , C04B35/56
摘要： PURPOSE:To produce the title high-purity and high-strength SiC sintered body free of cracks in good yield by mixing specified high-purity SiC powder and high-purity graphite or carbon black, forming, calcining, and purifying the mixture, allowing the product to react with Si, and then sintering the reaction product. CONSTITUTION:Awt.% high-purity SiC powder having X1mum particle diameter (X1 is 0.1-20) and the high-purity graphite or carbon black having X2mum particle diameter (X2 is 0.1-20) and ym /g specific surface are mixed to fulfill inequalities I-III (A 0. B 0, (A+B)=100, 70 =1450 deg.C, allowed to react with Si, and sintered.

9. 发明专利

JPS6270510A SUPPORT MEMBER FOR HEATED STEEL MATERIAL 失效
公开(公告)号：JPS6270510A
公开(公告)日：1987-04-01
申请号：JP20829485
申请日：1985-09-20
申请人： SHINETSU CHEMICAL CO
发明人： MATSUMOTO FUKUJI
IPC分类号： F23M5/04 , C04B35/56 , C04B35/565 , C21D1/00 , F23M5/00
摘要： PURPOSE:To manufacture a support member for a heated steel material having superior strength at high temp. by fitting a bored skid button consisting of silicon carbide power, carbon powder and a binder in each of metallic fittings for receiving on a skid pipe. CONSTITUTION:Silicon carbide powder and carbon powder are homogeneously mixed with a small amount of a binder, dried and compacted. This green compact is calcined at about 600 deg.C in an Ar atmosphere, bored and sintered at about 1,600 deg.C in a vacuum furnace to form a skid button 1' having a bore 6. Metallic fittings 3 for receiving are joined to a skid pipe 4 and such a skid button 1' is fitted in each of the fittings 3 with a heat insulator 2 in-between. Thus, a support member for a heated steel material for a heating furnace having high strength at >=about 1,500 deg.C high temp. is obtd.

10. 发明专利

JP2003156289A CRUCIBLE FOR MELTING OF RARE EARTH ALLOY AND RARE EARTH ALLOY 审中-公开
公开(公告)号：JP2003156289A
公开(公告)日：2003-05-30
申请号：JP2001351584
申请日：2001-11-16
申请人： SHINETSU CHEMICAL CO
发明人： HASHIMOTO TAKAHIRO , MATSUMOTO FUKUJI , MINOWA TAKEHISA
IPC分类号： C04B35/46 , C04B35/50 , C22B59/00 , F27B14/10 , F27D1/04
摘要： PROBLEM TO BE SOLVED: To provide a crucible for melting of rare earth alloy capable of easily removing produced slag, capable of repeatedly using it and inexpensive. SOLUTION: This crucible containing one or more than two kinds of rare earth oxides including Y2 O3 selected from them and Al2 TiO5 as its main components is constituted by baking it at 1,000-1,700 deg.C, distributing the rare earth oxides at a higher rate at a particulate part of not more than 0.5 mm than a coarse grain part a grain diameter of which exceeds 0.5 mm and not materially containing a reaction product of the rare earth oxide and Al2 TiO5 .

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