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1. 发明专利

JPH04298213A VENTURI SCRUBBER AND WASTE GAS CLEANING METHOD 失效
公开(公告)号：JPH04298213A
公开(公告)日：1992-10-22
申请号：JP8468791
申请日：1991-03-25
申请人： SHINETSU CHEMICAL CO
发明人： NUMATA KOICHI , FUJIMA YOSHIHIKO
IPC分类号： B01D47/10 , B01D53/18
摘要： PURPOSE:To allow the treatment of corrosive waste gases, such as gas of chlorine system in a high-temp. state by forming a Venturi tube of ceramics and to allow the good removal of even the fine particles simply by once passing the gases through the Venturi tube. CONSTITUTION:A piping 9 for introduction of the waste gases is connected to a bell-mouth part 2 of the Venturi tube 1 and the waste gases are admitted into the bell-mouth part 2. The Venturi tube 1 is formed of the ceramics having excellent thermal impact resistance and heat resistance and, therefore, even if the waste gases are at a high temp. of >=600 deg.C, there is no need for cooling the waste gases by prolonging the piping 9 or passing the gases through a heat exchanger, etc. The velocity of waste gases is increased in a throat part 3 and water or neutralizing liquid is sprayed from a spray nozzle 4 to capture the fine particles in the waste gases in a diffuser part 5. The fine particles are dropped into a tank 7. There is no possibility of the corrosion of the diffuser part 5 and skirt part 6 by the sticking of water drops and the high cleaning performance is attained.

2. 发明专利

JPH0372075A APPARATUS FOR PRODUCING SILICON CARBIDE FILM 失效
公开(公告)号：JPH0372075A
公开(公告)日：1991-03-27
申请号：JP20742689
申请日：1989-08-10
申请人： SHINETSU CHEMICAL CO
发明人： MADONO JIYUNJI , HAYASHI NORIO , FUJIMA YOSHIHIKO , MATSUMOTO FUKUJI
IPC分类号： C23C16/32 , C23C16/44
摘要： PURPOSE:To provide the above device which forms a high-purity SiC film having excellent uniformity and homogeneity on the inside surface of a cylindrical work by providing a heating mechanism in a reaction tube housing the work and a movable gas supplying pipe for supplying gaseous raw materials contg. a C source and Si source into the work from the front end part. CONSTITUTION:After the work 21 is housed in the reaction tube 3, the inside of the tube 3 is heated by a water-cooled induction coil 6 of the heating mechanism and the gaseous raw materials contg. the C source and Si source are supplied into the work 21 from the front end part of the gas supplying pipe 9. The front end of the pipe 9 is then moved axially into the work and SiC is formed over the entire inside surface of the work 21 by chemical vapor deposition, by which the SiC film is formed. The pressure in the pipe 3 is preferably reduced at this time. The fresh gaseous raw materials are always supplied to the reaction region where the uniform and homogeneous vapor deposited film is obtd. on the inside surface of the work even if the work is a long-sized cylindrical object. The uniform and homogeneous SiC film is thus surely formed on the inside surface of the work.

3. 发明专利

JPH0677310A WASHING METHOD FOR SILICON CARBIDE MEMBER 失效
公开(公告)号：JPH0677310A
公开(公告)日：1994-03-18
申请号：JP25207692
申请日：1992-08-27
申请人： SHINETSU CHEMICAL CO
发明人： MATSUMOTO FUKUJI , FUJIMA YOSHIHIKO
IPC分类号： B08B5/00 , H01L21/22 , H01L21/673 , H01L21/68
摘要： PURPOSE:To make it possible to wash in a short time and with a high washing degree by performing dry type hydrochloride gas washing for a silicon carbide member for producing semiconductors, then reducing pressure, removing a residual gas in the system, and performing oxygen gas flow washing. CONSTITUTION:Wet washing is performed by immersing a silicon carbide member into a 5 to 10% hydrofluoric acid solution for 60 to 120 minutes. Then, it is taken out from said solution and acid is fully removed by fully rinsing it with pure water, and natural drying is performed. When performing dry type washing for a dried silicon carbide member, the silicon carbide member is set in a diffusion furnace and heating is started. Then, after reaching a predetermined temperature, dry hydrochloride gas washing is performed in which oxygen gas and hydrochloride gas flow. Thereafter, the pressure is reduced in the system, hydrochloride gas is applied, the pressure is reduced again and the residual gas in the system is removed. Then, oxygen gas flow washing is performed and dry washing is completed. By doing this, the washing can be performed in a short time with a high degree of washing.

4. 发明专利

JPH03130366A APPARATUS FOR PRODUCING SILICON CARBIDE FILM 失效
公开(公告)号：JPH03130366A
公开(公告)日：1991-06-04
申请号：JP26753989
申请日：1989-10-13
申请人： SHINETSU CHEMICAL CO
发明人： MADONO JIYUNJI , HAYASHI NORIO , FUJIMA YOSHIHIKO , MATSUMOTO FUKUJI
IPC分类号： C04B35/565 , C04B35/56 , C23C16/32 , C23C16/44 , C23C16/46 , H01L21/205 , H01L21/31
摘要： PURPOSE:To allow film formation with excellent uniformity and homogeneity with the apparatus for forming the high purity silicon carbide film by chemical vapor deposition on the inside surface of a cylindrical work by adopting the constitution to prevent the distance between a heating section and a gas introducing section from changing. CONSTITUTION:A base body 31 is housed in a reaction tube 17 and the tube 17 is capped, then the inside of the tube is reduced in pressure at the time of forming the high purity silicon carbide film on the inside surface of the cylindrical silicon carbide film base body (work) 31 of the reaction tube for a semiconductor diffusion furnace. A water cooled induction coil 26 is then energized to heat the lower part of the base body 31 to a band shape and gaseous raw materials contg. a carbon source and silicon source are supplied to the band-shaped heating region mentioned above through a gas supplying pipe 28. The silicon carbide film is then deposited by evaporation on the lower part in the base body 31. The tube 17 is lowered by operating a reduction motor 3 in this state and the film formation is executed while the band-shaped reaction region supplied with the gaseous raw materials is moved from the bottom end to the top end of the base body 31. Since the coil 26 and the supplying pipe 28 are fixed with this device, the distance between both does not change at the time of the film formation.

5. 发明专利

JPH08301672A PRODUCTION OF POWDER FOR POROUS SINTERED COMPACT 失效
公开(公告)号：JPH08301672A
公开(公告)日：1996-11-19
申请号：JP13278795
申请日：1995-05-01
申请人： SHINETSU CHEMICAL CO
发明人： UCHIDA MASANOBU , FUJIMA YOSHIHIKO , HAMAYA NORIAKI , YOSHIDA AKIHIKO
IPC分类号： B22F1/00 , B22F3/11 , B22F5/00 , C04B38/06
摘要： PURPOSE: To provide a method for producing a powder for a porous sintered compact containing a raw material powder and a cellulating agent uniformly distributed in order to afford a sintered compact having a uniform distribution of pores. CONSTITUTION: A graphite powder or a crystalline cellulose powder or both as a cellulating agent are added to a raw material powder and an organic binder as a binder is then added to the resultant mixed powder. The prepared mixed powder is then kneaded according to a wet process and subsequently dried. The resultant dried material is mechanically pulverized.

6. 发明专利

JPH07118017A PRODUCTION OF LANTHANUM MANGANITE POWDER 失效
公开(公告)号：JPH07118017A
公开(公告)日：1995-05-09
申请号：JP25954493
申请日：1993-10-18
申请人： SHINETSU CHEMICAL CO
发明人： ISHII MASATOSHI , SAKAI SHIGERU , YOSHIDA AKIHIKO , YOSHIDA AKIFUMI , FUJIMA YOSHIHIKO
IPC分类号： C01G45/00
摘要： PURPOSE:To easily obtain homogeneous lanthanum manganite powder contg. no platy crystals, free from an unreacted component and having a single perovskite phase by adding a mixed soln. contg. La, Sr and Mn as stock elements to an aq. soln. of a prescribed pH contg. carbonate ions and firing the resulting precipitate. CONSTITUTION:An aq. soln. contg. carbonate ions is adjusted to >=PH 7 by satisfactory stirring and mixing or by adding alkali. A mixed aq. soln. contg. La, Sr and Mn or mineral acid salts of La and Mn is added to the aq. soln. of >=pH 7 contg. carbonate ions, they are stirred and the resulting precipitate is fired to obtain the objective lanthanum manganite powder having a compsn, represented by (La1-xSrx)yMn0z [the atomic ratio of x:y:z is (0-0.5):(0.8-1):

7. 发明专利

JPH03126876A PRODUCTION DEVICE FOR SILICON CARBIDE FILM 失效
公开(公告)号：JPH03126876A
公开(公告)日：1991-05-30
申请号：JP26373489
申请日：1989-10-09
申请人： SHINETSU CHEMICAL CO
发明人： MADONO JIYUNJI , FUJIMA YOSHIHIKO , HAYASHI NORIO , MATSUMOTO FUKUJI
IPC分类号： C04B35/565 , C04B35/56 , C23C16/32 , C23C16/44 , C23C16/46 , C23C16/52 , H01L21/205 , H01L21/31
摘要： PURPOSE:To form a silicon carbide film which is uniform, homogeneous and dense on the inner face of long-sized cylindrical material to be treated by holding the material to be treated in a cylindrical reaction pipe and heating the material to be treated with a bandlike heating mechanism while rotating it and supplying a gaseous raw material. CONSTITUTION:A producing device 1 for a silicon carbide film is formed of a cylindrical reaction pipe 6 for housing material 23 to be treated, a heating mechanism, a gas supplying mechanism 25 and the mechanisms 17, 19 which rotate the material 23 to be treated. The heating mechanism is provided and fixed in a range over the tip part of the reaction pipe 6 from the base end part thereof and heating is on/off-controlled. The material 23 to be treated is partially heated in a band shape and also this heating region is moved to heat this material to be treated with the time difference. Further the gas supplying mechanism 25 supplies a gaseous raw material contg. a carbon source and a silicon source into the material 23 to be treated. By the above device 1, a high-purity silicon carbide film is formed on the inner face of the cylindrical material 23 to be treated by a CVD method.

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