专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2000124520A PIEZOELECTRIC SINGLE CRYSTAL WAFER FOR PSEUDO-ELASTIC SURFACE WAVE DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000124520A
公开(公告)日：2000-04-28
申请号：JP30478798
申请日：1998-10-12
申请人： SHINETSU CHEMICAL CO
发明人： SHIONO YOSHIYUKI , KUWABARA YOSHINORI , RYUO TOSHIHIKO
IPC分类号： H01L41/18
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric single crystal wafer for pseudo-elastic surface wave device, which is manufactured by a method wherein a pseudo-elastic surface wave device, which is not exerted the effect of bulk waves, can be manufactured, a warpage of the wafer is lessened, and the yield of the production of the wafer at the time of the production of the wafer is increased favorably. SOLUTION: In a method, wherein a piezoelectric single crystal wafer for pseudo- elastic surface wave device with the wafer surface, which is propagated with pseudo- elastic surface waves, and the wafer surface, whose mean surface roughness (Ra) is less than 0.30 μm, on the opposite side to the above wafer surface and a piezoelectric single crystal for pseudo-elastic surface wave device are fostered, this wafer is sliced to cut out the wafer and after that, the wafer is subjected to lapping and moreover, the surface of this wafer which is propagated with the pseudo-elastic surface waves, is mirror-polished to manufacture the piezoelectric single crystal wafer for pseudo- elastic surface wave device, and the wafer surface on the opposite side to the wafer surface propagated with the pseudo-elastic surface waves by the lapping is formed so that its mean surface roughness (Ra) becomes a roughness less than 0.30 μm.

2. 发明专利

JPH1036193A PRODUCTION OF SINGLE CRYSTAL OF LITHIUM TANTALATE 失效
公开(公告)号：JPH1036193A
公开(公告)日：1998-02-10
申请号：JP21060196
申请日：1996-07-22
申请人： SHINETSU CHEMICAL CO
发明人： MAYUZUMI IKUO , KUWABARA YOSHINORI , RIYUUOU TOSHIHIKO
IPC分类号： C30B15/32 , C30B15/36 , C30B29/30 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To obtain a single crystal of 42 degree ±3.5 degree rotation Y-axis having the minimum value of propagation loss of surface acoustic wave device by using a single crystal of lithium tantalate of 33 degree ± 5 degree rotation as a single crystal and pulling up the seed crystal in inclination of specific direction by Czochralski method. SOLUTION: In this method for producing a single crystal of lithium tantalate by Czochralski method, a single crystal of lithium tantalate of 33 degree ±5 degree rotation Y-axis is used as a single crystal to give a single crystal of 42 degree ± 3.5 degree rotation Y-axis. In the production, the seed crystal is inclined by using a seed holder capable of inclining the seed crystal in the Y-Z direction so as to regulate the pulling direction to 42 degree ± 3.5 degree rotation Y-axis. Consequently, a high-quality single crystal of 42 degree ±3.5 degree rotation Y-axis, slight in crack is obtained in high yield.

3. 发明专利

JPH0920584A PRODUCTION OF OXIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH0920584A
公开(公告)日：1997-01-21
申请号：JP16488095
申请日：1995-06-30
申请人： SHINETSU CHEMICAL CO
发明人： KAMIO TAKESHI , KUWABARA YOSHINORI , RIYUUOU TOSHIHIKO
IPC分类号： G02B6/12 , C30B15/00 , C30B15/14 , C30B29/30 , H03H3/08
摘要： PURPOSE: To prevent the melt from being contaminated with refractory fragments contributing to cracks in the single crystal through the opening of a lid or the gap between the crucible and a reflector in the production of oxide single crystal by growing it from a melt in a crucible through Czochralski process. CONSTITUTION: In growing the objective oxide single crystal from a melt in a crucible through Czochralski process, an apparatus equipped with an after- heater 7 above the crucible and a disc-shaped lid with an opening located above the after-heater is used. In this case, the opening of the lid is provided with screen-shaped projections 14. Alternatively, this oxide single crystal is obtained by using an apparatus equipped with a doughnut disc-shaped reflector as a heat-reflective plate above the crucible; in this case, the reflector is provided with screen-shaped projections 15.

4. 发明专利

JPH0912393A PRODUCTION OF OXIDE SINGLE CRYSTAL 失效
公开(公告)号：JPH0912393A
公开(公告)日：1997-01-14
申请号：JP18483695
申请日：1995-06-28
申请人： SHINETSU CHEMICAL CO
发明人： KAMIO TAKESHI , KUWABARA YOSHINORI , RIYUUOU TOSHIHIKO
IPC分类号： C30B15/22 , C30B29/30 , H03H3/08
摘要： PURPOSE: To prevent cracking as perfectly as possible and to produce an oxide single crystal with high productivity in a high yield. CONSTITUTION: When an oxide single crystal is produced by a pulling method, in a coordinate system with the growth direction of the crystal as the X coordinate axis, the diameter [f (X)] of the crystal as the Y coordinate axis and a point at which the diameter of the crystal begins to increase as the origin of the coordinate axes, value given by the secondary differentiation [f" (X)] of the diameter [f (X)] is monotonously increased from 0 in the positive direction in the early stage of formation of a shoulder part, value given by the f" (X) is monotonously reduced across 0 in the negative direction in the middle stage and value given by the f" (X) is monotonously increased toward 0 in the latter stage to form the shoulder part.

5. 发明专利

JPH02232913A MANUFACTURE OF OXIDE GARNET SINGLE CRYSTAL 失效
公开(公告)号：JPH02232913A
公开(公告)日：1990-09-14
申请号：JP5330689
申请日：1989-03-06
申请人： SHINETSU CHEMICAL CO
发明人： RIYUUOU TOSHIHIKO , KUWABARA YOSHINORI
IPC分类号： C30B19/04 , C30B19/10 , C30B29/28 , H01F1/057 , H01F41/28
摘要： PURPOSE:To make film thickness uniform and to reduce irregularity of magnetic characteristics by a method wherein, in a liquid-phase epitaxial growth method, a substrate rotating shaft is made eccentric and the like in the prescribed amount from the center axis of a liquid solution vessel. CONSTITUTION:For example, substrate 7 is dipped into the fused solution 2 containing a metal oxide equivalent for the oxide garnet single crystal, which is placed in the liquid vessel 1 such as a platinum crucible and the like, and the flux component such as PbO, B2O3 and the like in such a manner that the substrates 7 are being rotated and inverted, and oxide garnet single crystal is formed on the substrates 7 by a liquid-phase epitaxial growth method. When the rotating shaft A of the substrate 7 and the center axis B of the liquid vessel 1 are made eccentric in the amount of 5.5mm or more, or when the substrates 7 are made to cross each other at the angle of theta2 deg.

6. 发明专利

JPH02232906A GARNET SINGLE CRYSTAL FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02232906A
公开(公告)日：1990-09-14
申请号：JP5330789
申请日：1989-03-06
申请人： SHINETSU CHEMICAL CO
发明人： RIYUUOU TOSHIHIKO , KUWABARA YOSHINORI , TANJI MASAYUKI
IPC分类号： C30B19/04 , C30B29/28 , H01F10/24 , H01F41/28
摘要： PURPOSE:To obtain an excellent magnetic film having no magnetoplumbite by a method wherein, after a metal oxide liquid solution has been maintained at saturation temperature or higher for a fixed period of time or longer, a garnet single crystal film is epitaxially grown using an LPE method. CONSTITUTION:The necessary of Y3Fe5O12 or (YMFe)8O12 [provided that M contains at least one element selected from La, Bi, Gd, Lu, Sm, Ca, Ge, Al, Sc and In] is laid in a platinum crucible together with a flux comprising PbO and B2P3, they are formed into a liquid solution at 900 to 1300 deg.C, and after it has been maintained for a fixed period of time, a gadolinium-gallium-garnet substrate is dipped therein, and a garnet single crystal film is epitaxially formed on the substrate. When crystal growth is started again using the residual solution, the residual solution is heated up to the saturation temperature or higher and this state is maintained for the predetermined period of time before the crystal growth is started again. Also, when new solution is added to the residual solution, the mixed solution is heated up to the saturation temperature or higher, and used after the lapse of the prescribed time. According to this constitution, a garnet single crystal film, having no deposition of magnetoplumbite and suitable for a magneto-optical element and the like, can be obtained easily.

7. 发明专利

JPH02167886A PRODUCTION OF SINGLE CRYSTAL OF OXIDE GARNET 失效
公开(公告)号：JPH02167886A
公开(公告)日：1990-06-28
申请号：JP32182688
申请日：1988-12-20
申请人： SHINETSU CHEMICAL CO
发明人： KUWABARA YOSHINORI , YOSHIDA AKIFUMI , RIYUUOU TOSHIHIKO
IPC分类号： C30B19/00 , C30B29/24 , C30B29/28 , H01F41/28
摘要： PURPOSE:To prevent substrates from cracking and to readily obtain single crystal in high yield by equipping a heat barrier plate below the substrates, maintaining the plate by a holder, inserting the plate into melt and growing single crystal of oxide garnet on the substrates. CONSTITUTION:In growing single crystal of oxide garnet by using an upright growth furnace 3, a heat barrier plate 8 is arranged below substrates 7 set in a holder 5 so that the substrates 7 are not heated by radiation heat from melt 6. The barrier plate 8 requires a heat-resistant and corrosion-resistant material such as platinum or platinum gold alloy from facts that radiation heat from the melt 6 is a high temperature of about 1,000 deg.C and PbO having strong corrosive properties is used as flux. By the production of single crystal, since the substrates 6 are not exposed to radiation heat from the melt 7 by attaching the heat barrier plate, temperature difference will not occur between the surface and the under surface of the substrates.

8. 发明专利

JP2001130997A PIEZOELECTRIC SINGLE CRYSTAL WAFER 失效
公开(公告)号：JP2001130997A
公开(公告)日：2001-05-15
申请号：JP30640499
申请日：1999-10-28
申请人： SHINETSU CHEMICAL CO
发明人： SHIONO YOSHIYUKI , KUWABARA YOSHINORI , RYUO TOSHIHIKO
IPC分类号： H01L41/18 , C30B29/30 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a piezoelectric single crystal wafer for an elastic surface wave or pseudo-elastic surface wave device having remarkably decreased small foreign materials attached to the surface for forming an electrode and the crack of the wafer and provide a piezoelectric single crystal wafer giving a filter, etc. having excellent characteristics in high production yield. SOLUTION: The surface roughness Ra of the outer circumference to form an electrode for the transmission and reception of elastic surface wave or pseudo-elastic surface wave and excluding the surface and back face of the wafer is adjusted to

9. 发明专利

JP2001053578A PIEZOELECTRIC MONOCRYSTAL WAFER FOR SURFACE ACOUSTIC WAVE OR PSEUDO-SURFACE ACOUSTIC WAVE DIVICE 失效
公开(公告)号：JP2001053578A
公开(公告)日：2001-02-23
申请号：JP23024699
申请日：1999-08-17
申请人： SHINETSU CHEMICAL CO
发明人： SHIONO YOSHIYUKI , KUWABARA YOSHINORI , RYUO TOSHIHIKO
IPC分类号： H01L41/09 , H01L41/18 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To realize piezoelectric monocrystal which reduces the deviation of a surface acoustic wave speed or a pseudo-surface acoustic wave speed and is superior in the equality of speed by lowering the etching pit density of a wafer surface where an electrode for transmitting/receiving surface acoustic waves or a pseudo surface acoustic waves is formed to be equal to or lower than a specific value. SOLUTION: The etching pit density of a wafer surface is made equal to or lower than 7.8×104 pit/mm2. As the material of a piezoelectric monocrystal wafer for a surface acoustic wave or pseudo surface acoustic wave device, lithium niobate, crystal, lithium tetrabotate or langasite, which is satisfactorily piezoelectric as a piezoelectric monocrystal, is used in addition to Y-cut lithium tantalate. A seed crystal is worked, so that a crystal surface is in parallel with an X-axis and the crystal surface where an angle formed by the perpendicular line of the crystal surface and a Y-axis is 33 to 46 deg. is horizontal. It is fixed so as to make the crystal surface horizontal, and a monocrystal is grown. This is pulled up in a vertical direction, while rotating and after mirror surface grinding, a wafer is formed.

10. 发明专利

JPH06263581A PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPH06263581A
公开(公告)日：1994-09-20
申请号：JP4537693
申请日：1993-03-05
申请人： SHINETSU CHEMICAL CO
发明人： KUWABARA YOSHINORI , MAKIKAWA SHINJI , RIYUUOU TOSHIHIKO
IPC分类号： C30B11/00 , C30B11/14 , C30B29/30 , C30B29/32
摘要： PURPOSE:To produce a single crystal of lithium niobate, bismuth germanate, etc., in high yield without generating cracks, etc. CONSTITUTION:A single crystal is grown from a molten liquid with a seed crystal by Bridgeman method under a condition to satisfy the relationship of formula T /D)-15 wherein D (mm) is the inner diameter of the seed tube and T (mm) is the thickness of the seed crystal.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式