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1. 发明专利

JPH11307247A MANUFACTURE OF THIN FILM ELECTROLUMINESCENT ELEMENT 失效
公开(公告)号：JPH11307247A
公开(公告)日：1999-11-05
申请号：JP10942598
申请日：1998-04-20
申请人： SHARP KK , FUJI ELECTRIC CO LTD
发明人： TERADA KOSUKE , TANAKA KOICHI , KAWAMURA YUKINORI , KATO HISATO , NAKAMATA SHINICHI , URUSHIYA TANIO
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To put a thin-film electroluminescent element to practical use by enhancing the light emission characteristic of an emitter, such as emission brightness, etc. SOLUTION: A light emitting layer 10 including an SrS:Ce layer 7 is formed, heat treated in a hydrogen sulfide gas atmosphere, and heat treated in a high vacuum. This combination annealing provides a high-performance blue light emitting layer whose emission efficiency is remarkably enhanced. Since the light emitting layer 10 is heat-treated in the hydrogen sulfide gas atmosphere immediately after its formation, the heat treatment in the hydrogen sulfide gas atmosphere does not deteriorate the insulation characteristic of an insulating layer 13 that is formed on the light emitting layer 10.

2. 发明专利

JPH11214151A MANUFACTURE OF COLOR ELECTROLUMINESCENT DISPLAY DEVICE AND COLOR ELECTROLUMINESCENT DISPLAY DEVICE 失效
公开(公告)号：JPH11214151A
公开(公告)日：1999-08-06
申请号：JP1608698
申请日：1998-01-28
申请人： SHARP KK
发明人： TANAKA KOICHI
IPC分类号： H05B33/02 , G09F9/30 , H05B33/04 , H05B33/10 , H05B33/12
摘要： PROBLEM TO BE SOLVED: To prolong the service life of a seal of a color EL display device. SOLUTION: The initial thickness of a main substrate 33 having transparency is larger than a reference thickness WC determined in advance. First, a plurality of thin film EL elements 63 are formed in one direction 61 of the main substrate 33. Next, a substrate for the seal 52 in which a recessed part 67 is formed in one direction 66 is bonded at an interval determined in advance in one direction 61 of the main substrate 33. Then, a protection substance for protecting the thin film EL element 63 is sealed between one direction 61 of the main substrate 33 and the substrate for seal 52. Then, the main substrate 33 is machined to the reference thickness WC. Next, a color filter part 35 is formed in the other direction 64 of the main substrate 33. Lastly, a substrate for reinforcement 37 is attached in the other direction 64 of the main substrate 33 through the color filter part 35. Consequently, a color EL display device 31 having a seal part 36 having the same structure as existing seal part is completed.

3. 发明专利

JPH1167462A THIN FILM EL PANEL 失效
公开(公告)号：JPH1167462A
公开(公告)日：1999-03-09
申请号：JP22785297
申请日：1997-08-25
申请人： SHARP KK
发明人： TERADA KOSUKE , TANAKA KOICHI
IPC分类号： H05B33/10 , B32B7/02 , H01B13/00 , H05B33/12 , H05B33/26 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a thin film EL panel in which micro destruction can be suppressed even in the case over etching time is prolonged in a method for producing a thin film EL panel of which an upper part electrode is formed from a transparent electrode and in a thin film EL panel produced by such a method. SOLUTION: An upper electrode 8 to be a transparent conductive film is immersed in a mixed solution containing phosphoric acid, water, and nitric acid on completion of patterning, so that micro destruction can be suppressed even in the case over etching time is prolonged. Furthermore, over etching is carried out for 20-80 seconds, so that short circuit of the upper electrode 8 due to etching residue can reliably be prevented. Consequently, a thin film EL panel with high reliability can be obtained.

4. 发明专利

JPH08153587A THIN FILM TYPE EL DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH08153587A
公开(公告)日：1996-06-11
申请号：JP31557094
申请日：1994-11-25
申请人： SHARP KK
发明人： TANAKA KOICHI , KAWARASAKI MORIHIRO
IPC分类号： H05B33/10 , H05B33/12 , H05B33/22
摘要： PURPOSE: To lower the drive voltage and generate a light emitting characteristic of high reliability. CONSTITUTION: A thin film EL element 11 is structured so that a transparent electrode 13, insulation layer 14, EL light emission layer 15, another insulation layer 16, and metal electrode 17 are laminated on a photo-transmissive base board 12 in the sequence as named. The insulation layers 14, 16 consist of the first insulative layer 18, 21 formed from a Sr2 Ta2 O7 film and the second insulative layers 19, 20 formed from a Sr2 Ta2 O7 : N film, wherein the film thickness of the second layers 19, 20 should be between 30 and 100nm. The first layers 18, 21 and the second layers 19, 20 are manufactured continuously only by changing over the sputter gas and constitute the insulation layers 14 and 16, and thereby a thin film EL element 11 is obtained which requires a low drive voltage, ensures a long cumulative driving time, and presents less drop of the brightness in light emission.

5. 发明专利

JPH08111287A MANUFACTURE OF THIN-FILM EL ELEMENT 失效
公开(公告)号：JPH08111287A
公开(公告)日：1996-04-30
申请号：JP24650694
申请日：1994-10-12
申请人： SHARP KK , SANYO SHINKU KOGYO KK
发明人： KAWARASAKI MORIHIRO , TANAKA KOICHI , KITAHATA AKIHIRO , KAJIKAWA FUJIO
IPC分类号： H05B33/06 , H05B33/10 , H05B33/12 , H05B33/14
摘要： PURPOSE: To eliminate change in the light emitting characteristics caused by a long time of operation. CONSTITUTION: A thin film type EL element 1 is structured so that a transparent electrode 3, the first insulative layer 4, EL light emission layer 5, the second insulative layer 6, and metal electrode 7 are laid one over another on one surface 2a of a transparent base board 2. The EL light emission layer 5 is made of ZnS:Mn and formed by attaching this material onto the first insulative layer 4 by evaporation method. The process is performed in an H2 S atmosphere until a thickness D smaller than the total thickness of the light emission layer 5 is attained. D should range between 0

6. 发明专利

JPH0745367A MANUFACTURE OF FILM EL ELEMENT 失效
公开(公告)号：JPH0745367A
公开(公告)日：1995-02-14
申请号：JP19013593
申请日：1993-07-30
申请人： SHARP KK
发明人： NOMA MIKIHIRO , TANAKA KOICHI , NAKAMURA NORIAKI , YAMADA KIMIHIKO
IPC分类号： G09F9/30 , H05B33/10 , H05B33/12 , H05B33/14
摘要： PURPOSE:To stabilize the light emitting properties in a short time without raising light emitting threshold voltage, and besides, improve the mass production and long-term reliability by setting the order of performing oxidation treatment and heat treatment, the condition, etc., optimally. CONSTITUTION:For the light emitting layer made in a substrate, the surface is oxidized in oxygen atmosphere or atmoshere including oxygen, and then heat treatment is performed for the light emitting layer in substrate temperature range of 400-500 deg.C. Moreover, in oxidation processing, in case that, for example, Zns is used as the light emitting layer, the composition rate of the light emitting layer is corrected by O atoms filling up the S defect on the surface of the light emitting layer, so the time required for the stabilization of light emitting properties is shortened. That is, the light emitting threshold voltage is lowered without marring the shortening effect of the initial aging time by oxidizing by setting the substrate temperature in heat treatment in the range of 400-500 deg.C, as result the mass producibility of a film EL element and the long-term reliability can be improved, and also the drive voltage can be reduced.

7. 发明专利

JPH06188196A THERMAL CVD DEVICE AND MANUFACTURE OF FILM EL ELEMENT WITH IT 失效
公开(公告)号：JPH06188196A
公开(公告)日：1994-07-08
申请号：JP33633892
申请日：1992-12-16
申请人： SHARP KK
发明人： MIKAMI AKIYOSHI , TERADA KOSUKE , TANAKA KOICHI , KAWARASAKI MORIHIRO , NOMA MIKIHIRO
IPC分类号： C23C16/18 , C23C16/44 , C23C16/455 , H01L21/205 , H05B33/10
摘要： PURPOSE:To perform continuous growth without substrate movement within the same reactor, vacuum release and temperature rising/falling, relating to a light emission layer and an insulation layer that constitute a film EL element, and three-layer continuous growth of an insulation layer-light emission layer- insulation layer. CONSTITUTION:Relating to a thermal CVD device provided with a reactor of double-pipe structure consisting of a reactor inner tube 4 that surrounds a growth area provided with multiple substrates and a reactor outer tube 1 that, further, surrounds the inner tube 4. the outer tube 1 is connected to the reactor with at least one solid material supply path, and to introduce material gas from the outer tube 1 into the inside of the inner tube 4, the wall of the inner tube is provided with a gap or small hole that allows flow-in/out of gas. Thus, a thermal CVD device provided with, to directly introduce a material gas different from the material gas from the outside of the reactor to inside of the inner tube, at least one material gas introduction tube 7 and an exhaust part at part of between the reactor outer tube 1 and the inner tube 4, and manufacture of a thin film EL element using the device.

8. 发明专利

JPH0645317A FORMATION OF INSULATING FILM 失效
公开(公告)号：JPH0645317A
公开(公告)日：1994-02-18
申请号：JP19824392
申请日：1992-07-24
申请人： SHARP KK
发明人： KAWARASAKI MORIHIRO , TANAKA KOICHI , NOMA MIKIHIRO
IPC分类号： H01L21/31 , H01L21/316
摘要： PURPOSE:To easily form an insulating film consisting of a mixed film or a laminated film composed of a plurality of alkoxides as a raw material. CONSTITUTION:A raw material heat insulating section 3 comprising Al(OC2H5)3 is insulated from heat in liquid at 150 deg.C. A raw material heat insulating section 4 comprising Ta(OC2H5)5 or Ta(OCH3)5 is insulated from heat at 90 deg.C. At the time of forming a mixed film, both raw materials of the raw material heat insulating sections 3, 4 are inducted into a growing section 1 simultaneously. Meanwhile, at the time of forming a laminated film, raw materials are alternately inducted into the growing section 1. In this way, an insulating film consisting of the mixed film and the laminated film is easily formed by combining raw materials of Al(OC2H5)3 with Ta(OC2H5)5 or Ta(OC2H5)5.

9. 发明专利

JPH05207937A ELECTRIC COFFEE HEATER 失效
公开(公告)号：JPH05207937A
公开(公告)日：1993-08-20
申请号：JP5793591
申请日：1991-02-27
申请人： SHARP KK
发明人： ONUKI SHOICHI , KIMURA SHINICHI , TANAKA KOICHI
IPC分类号： A47J31/10 , A47J31/42
摘要： PURPOSE:To provide the electric coffee heater which can execute a series of operations from crushing of coffee beans to extraction of coffee in one operation for depressing a start key without setting a timer. CONSTITUTION:This coffee heater is provided with such a coffee mill part 30 as coffee beans are supplied little by little to a crushing part 33 from an inserting part of the coffee mill part 30, and constituted so that the coffee mill can be stopped automatically by a microcomputer.

10. 发明专利

JPH0574760A THIN FILM DIELECTRIC 失效
公开(公告)号：JPH0574760A
公开(公告)日：1993-03-26
申请号：JP23588191
申请日：1991-09-17
申请人： SHARP KK
发明人： TERADA KOSUKE , MIKAMI AKIYOSHI , TANAKA KOICHI
IPC分类号： H01L21/316 , H01L21/318 , H05B33/12 , H05B33/22
摘要： PURPOSE:To obtain a thin film dielectric which is high in permittivity and breakdown strength, small in leakage current, and long in service life by a method wherein dielectric thin films of high permittivity and thin films of dielectric material low in leakage current are alternately laminated for the formation of the thin dielectric concerned. CONSTITUTION:A stripe-like transparent electrode 2 of ITO is formed on a glass board 1 through a high frequency sputtering method. Ta2O5 layers 3 and Al2O3 layers 4 are alternately and repeatedly laminated thereon through a high frequency sputtering method. The laminated dielectric is of four or more-layered structure, and it is preferable that it is of 18 or more-layered structure. As high permittivity dielectric material coexists with high-breakdown strength.low leakage current dielectric material in the obtained thin film dielectric, the obtained thin film dielectric becomes higher in permittivity than the thin film which contains only high-breakdown strength.low leakage current dielectric material. The thin film dielectric is more enhanced in breakdown strength and lessened in leakage current as compared with the thin film dielectric which contains only high permittivity dielectric material. Therefore, when a thin film dielectric of this design is applied to an EL element, the EL element can be enhanced in luminance and lowered in driving voltage.

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