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1. 发明专利

JP2001176796A FORMING METHOD OF SEMICONDUCTOR FILM, AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001176796A
公开(公告)日：2001-06-29
申请号：JP36194699
申请日：1999-12-20
申请人： SHARP KK
发明人： MIYAJIMA TOSHIAKI , TAKAGI JIYUNKOU
IPC分类号： H01L21/20
摘要： PROBLEM TO BE SOLVED: To provide a large-area crystallized semiconductor film with uniform crystal orientation by controlling crystal grains with easy crystal growth orientation in a growth step, when a non-single crystal semiconductor thin film on a non-single crystal insulating film or on a non-single crystal insulating substrate is crystallized through application of energy. SOLUTION: A recessed part 3, having a neck part 2 and a cross section with its side face and bottom smoothed continuously, is formed. An amorphous Si film 4 is embedded therein, and the crystal growth is made to advance from one side of the neck part 2 to the other side through the neck part 2. The crystal orientation is selected at the neck part 2, and an irregular crystal kernel generated in a region, where a large crystal grain is desired, is restrained after the crystal growth passed the neck part 2, by making the cross section of the recessed part 3 smoothly extended from the bottom to the side face.

2. 发明专利

JP2000349024A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000349024A
公开(公告)日：2000-12-15
申请号：JP15877499
申请日：1999-06-04
申请人： SHARP KK
发明人： MIYAJIMA TOSHIAKI , TAKAGI JIYUNKOU , MIZUKI TOSHIO
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To obtain a single-crystal semiconductor film over a large area, easily and at low costs by a method wherein a non-single-crystal insulating film on a substrate or an amorphous or polycrystal semiconductor film formed on a non-single-crystal insulating substrate is crystal-grown while the irregular generation of a nucleus is being suppressed to allow a controlled crystal as a seed to grow into a crystal. SOLUTION: An Ni film is vapor-deposited on the whole face by a sputtering method. After that, a linelike heater 5a is moved along a direction 7 to a seed-crystal formation region 8 through a constricted part 4 from a nucleus generation region 6. An exposed part is heated. A crystal nucleus which is generated in the nucleus generation region 6 passes the constricted part 4 so as to be grown. A single crystal which has a single crystal orientation is formed in the seed-crystal formation region 8. Then, a substrate 1 is heated. A linelike heater 5b is moved clockwise along a direction 9 at an angle 10 of, e.g. about 71 deg. with reference to the movement direction 7. The growth of a crystal in the transverse direction is continued with reference to an unexposed region in an amorphous Si film 2 from the end part of the seed-crystal formation region 8 while the single crystal in the seed-crystal formation region 8 is used as a seed.

3. 发明专利

JP2000252211A MANUFACTURE OF SEMICONDUCTOR THIN FILM, SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 失效
公开(公告)号：JP2000252211A
公开(公告)日：2000-09-14
申请号：JP34146399
申请日：1999-11-30
申请人： SHARP KK
发明人： MIYAJIMA TOSHIAKI , TAKAGI JIYUNKOU , MIZUKI TOSHIO
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To make a large crystal grain or single crystal of a semiconductor thin film formed on an insulating substrate, etc., and to form a single-crystal thin film of large area having a single crystal orientation. SOLUTION: This method for manufacture cotains a process wherein an amorphous or polycrystalline semiconductor film 2 is formed on a non-single crystal insulation film or a non-single crystal insulating substrate 1, and then the semiconductor film 2 is crystallized by applying energy to the semiconductor film 2. In this case, a process wherein a part of the amorphous or polycrystalline semiconductor film 2 is removed to form a constriction part 4, and a process wherein a crystalline nucleus that has passed through the constriction part 4 and has grown out of crystalline nucleuses generated at one side of the constriction part 4 is used as seed crystal to crystal-grow, are contained. Further, a process is contained wherein energy is applied using a line- shaped heater 5, etc., so that a temperature peak is made in the amorphous or polycrystalline semiconductor film 2 on the side of the constriction part 4 where a nucleus is desired to be generated, and the temperature peak is moved from the side of the constriction part where a nucleus is desired to be generated to the opposite side as shown with an arrow H.

4. 发明专利

JPS61239632A MOUNTING PROCESS FOR SUBSTRATE 失效
公开(公告)号：JPS61239632A
公开(公告)日：1986-10-24
申请号：JP8087785
申请日：1985-04-15
申请人： SHARP KK
发明人： KINOSADA TOSHIAKI , TOMITA KOJI , YAMASHITA TATSUYA , TAKAGI JIYUNKOU , SAKURAI TAKESHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To reduce the temperature distribution over a substrate by a method wherein, when a semiconductor substrate to be grown is bonded on a metallic susceptor to form a growing layer by molecular beam epitaxial process etc., the susceptor and the substrate are bonded to each other with In-Al alloy-made solder simultaneously fixing the substrate to clamping means on the peripheral part of susceptor. CONSTITUTION:When a substrate 2 to be grown is bonded on an Mo made susceptor 1 while a specified growing layer is deposited on the substrate 2 by molecular beam epitaxial process etc., the susceptor 1 and the substrate 2 are bonded to each other with In-Al alloy-made solder 3. Besides, holes 4 with three positioned tapers are made in the part encircling the substrate 2 of susceptor 1 while tapered Mo-made pins 5 with expanded pawls 8 are inserted into the surface of holes 4 while fall down preventing Mo made wires 7 are inserted into small holes made in the bottom to fix the pins 5. Moreover six rods 9 are fixed to the part protruding from the backside of susceptor 1 to position the susceptor 1 in the vacuum. Through these procedures, any void can be eliminated from the solder.

5. 发明专利

JPS566440A WORKING OF SEMICONDUCTOR SURFACE 失效
公开(公告)号：JPS566440A
公开(公告)日：1981-01-23
申请号：JP8120379
申请日：1979-06-26
申请人： SHARP KK
发明人： TOMITA KOUJI , TAKAGI JIYUNKOU , INOUE TADAAKI
IPC分类号： H01L21/302 , H01L21/30 , H01L21/3065
摘要： PURPOSE:To work the surface of a semiconductor roughly in a shape determined by the function formula by properly controlling the velocity and direction of the particles and the irradiation time in the irradiation of the medium or low speed charged particles. CONSTITUTION:When the medium or low speed charged particles are irradiated on the semiconductor, the etching rate is lower on the surface 6 than that on the surface 7 because of smaller incidence angle, while the etching rate is larger at the edge 8. At the same time, the etching rate is lower on the side 10 because of lower amount of the particles. Therefore, the etching rate is adjusted by turning the particle irradiation nozzle or turning the substrate with a work piece attached. This enables precise working even for a shape so complicated that must be determined by the function formula.

6. 发明专利

JPS55103777A PHOTOTRANSISTOR 失效
公开(公告)号：JPS55103777A
公开(公告)日：1980-08-08
申请号：JP1115979
申请日：1979-01-31
申请人： SHARP KK
发明人： INOUE TADAAKI , TAKAGI JIYUNKOU , TOMITA KOUJI
IPC分类号： H01L31/10
摘要： PURPOSE:To improve the photo response speed determined by the CR time constant, by making small the base-collector junction capacity and the emitter-base junction capacity. CONSTITUTION:Ga1-xAlxAs constant layer 313 of low carrier density is grown on high concentration n-type GaAs substrate 311, which is to become a collector layer, via n-type Ga1-xAlxAs gradient layer 312, which is to become a window layer. Next, p-type Ga1-xAlx As layer, which is to become a base layer and high carrier density n-type Ga1-xAlxAs layer, which is to become emitter layer 33, are formed. Then, by retaining several pieces, 2-3mu in diameter, of the base layer and the emitter layer at about 30mu intervals in the light receiving area, 300mu square, the other parts of the base and emitter layers are mesa-etched up to the collector layer. Next, by the CVD method, insulating film 14 is piled to a thickness so that no shortcircuiting occurs between the emitter and the collector. Subsequently, insulating film 14 is removed, and the entire surface is coated with Au-Ge, Au by evaporation and sealed, and thereby emitter electrode 33 is formed. Next, collector electrode 311' is formed on a part of the back side of the substrate.

7. 发明专利

JPS54103687A PHOTO DETECTOR AND ITS PRODUCTION OF THE SAME 失效
公开(公告)号：JPS54103687A
公开(公告)日：1979-08-15
申请号：JP1101578
申请日：1978-02-01
申请人： SHARP KK
发明人： INOUE TADAAKI , TAKAGI JIYUNKOU , TOMITA KOUJI
IPC分类号： H01L31/10
摘要： PURPOSE:To obtain visible light photo detectors of good spectral sensitivity characteristics by providing concentration distribution to the impurity concentrations of substrate to lower carrier concentrations from the photo detecting surface side up to P type layer and regions where depletion layer produces and increasing the concentrations in N type layer side diffused regions. CONSTITUTION:A mixed crystal ratio gradient layer 22 of GaAs1-xPx wherein the phosphorous mixed crystal ratios are subsequently increased, is diffused on a high concentration N type GaAs substrate 21 of more than 18 atom/cm in carrier concentration and a fixed mixed crystal ratio layer 23 of GaAs1-xPx (x 0.38) is vapor grown thereon. At this time, Te being an N type impurity is doped to make concentrations 7 to 8 X 10 atom/cm . thereafter, A GaAsP layer 24 whose concentration has been made at 10 atom/cm by decreasing the rate of Te doping sharply prior to completion of the growth is laminated on this and is grown. After these, the surface is cleaned and is covered with a SiO2 film 25, in which windows 36 are opened and Zn ions are implanted in the layer 24 to form P type regions 27 and produce PN junctions 28.

8. 发明专利

JPS5258389A PRODUCTION OF EL ELMENT 失效
公开(公告)号：JPS5258389A
公开(公告)日：1977-05-13
申请号：JP13433475
申请日：1975-11-07
申请人： SHARP KK
发明人： INOUE TADAAKI , TOMITA KOUJI , TAKAGI JIYUNKOU , HIJIKATA TOSHIKI
IPC分类号： H05B33/08 , H05B33/10
摘要： PURPOSE:To produce a thin film EL element whose light emission initiating voltage is low and light emitting brightness in no tinferior to that of conventional EL elements, by forming light emitting layers on a dielectric layer by a vapor deposition method wherein the temperature of a substrate is varied in plural kinds.

9. 发明专利

JP2003243414A SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE 审中-公开
公开(公告)号：JP2003243414A
公开(公告)日：2003-08-29
申请号：JP2002039377
申请日：2002-02-15
申请人： SHARP KK
发明人： TAKAGI JIYUNKOU , MIYAJIMA TOSHIAKI
IPC分类号： H01L21/20 , H01L21/316 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To reduce the variation of a threshold voltage by suppressing the variation of interface state density in each crystal orientation face. SOLUTION: A non-crystalline Si film is formed on a quartz substrate 1 having an insulating surface, and is subjected to first heat treatment (N 2 atmosphere, temperature 600°C, 15 hours) to be crystallized to form a polycrystalline Si film 3. A gate-oxide film 4 is formed on the polycrystalline Si film 3 at 400°C which is lower than a first heat treatment temperature of 600°C. At least an active region (channel region) of a polycrystalline Si-TFT is formed in the polycrystalline film 3, which is a lower layer underneath the gate oxide film 4. COPYRIGHT: (C)2003,JPO

10. 发明专利

JPH02288351A MEASUREMENT OF P-N JUNCTION DEPTH 失效
公开(公告)号：JPH02288351A
公开(公告)日：1990-11-28
申请号：JP11014189
申请日：1989-04-28
申请人： SHARP KK
发明人： TAKAGI JIYUNKOU
IPC分类号： G01R31/26 , G01R31/302 , H01L21/66
摘要： PURPOSE:To realize good accuracy and to place no restrictions to a junction area of a semiconductor to be measured by scanning and irradiating fine convergent rays at right angles to a cross line of a cross section and a P-N junction surface and by measuring a current which is induced in a semiconductor device. CONSTITUTION:Scanning and irradiation are carried out with fine convergent rays on a P-N junction cross section or on an angle lapping P-N junction cross section at right angles to a cross line of the cross section and the P-N junction surface. A current induced in a semiconductor device is measured by irradiation, synchronizing with the scanning. A position of fine convergent rays which maximize the current is made a position of the P-N junction surface on the cross section. A depth of P-N junction is acquired by a distance between the position and an upper end of a P-type layer on the cross section and by an angle where angle lapping is carried out. For example, fine convergent rays 19 are irradiated to an angle lapping P-N junction cross section 20, scanning is carried out at right angles to a P-N junction line 21 from a point P on a boundary line 22 through scanning system, and a current which flows to a measurement sample 10 is measured by a current measurement device 30. Accordingly, high position accuracy can be realized, thereby making preparation of stain etchant unnecessary.

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