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1. 发明专利

JP2011193025A Circuit substrate device 审中-公开
标题翻译：电路基板装置
公开(公告)号：JP2011193025A
公开(公告)日：2011-09-29
申请号：JP2011129102
申请日：2011-06-09
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： SAWAI TETSUO , IMAOKA SHUNICHI , YAMAGUCHI TAKESHI , SAIDA ATSUSHI
IPC分类号： H01F27/00 , H01F17/00 , H01L23/12 , H01P3/08
摘要： PROBLEM TO BE SOLVED: To propose a circuit board device which suppresses generation of electromagnetic fields and meets the requirement for size reduction. SOLUTION: In a circuit board device 100, a first wiring layer 110 has a first inductor 12 and a second inductor 14. A dielectric layer 115 has a first via 70 and a second via 72, each electrically connected to a first inductor 12 and a second inductor 14. A second wiring layer 120 has a bridge wiring line 30, which electrically connects the first via 70 to the second via 72, and a conductor pattern 50 which is formed around a bridge wiring line 30 and has outer edges at positions beyond the outer edges of a first wiring pattern and a second wiring pattern in the first wiring layer 110. A bridge wiring line 30 functions as a coplanar line and suppresses the occurrence of electromagnetic fields. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提出一种抑制电磁场产生并满足减小尺寸要求的电路板装置。解决方案：在电路板装置100中，第一布线层110具有第一电感器12和第二电感器14.电介质层115具有第一通孔70和第二通孔72，第一通孔70和第二通孔72电连接到第一电感器 12和第二电感器14.第二布线层120具有将第一通孔70电连接到第二通孔72的桥接布线30和形成在桥接布线30周围的导体图案50，并且具有外边缘在第一布线层110中的第一布线图案和第二布线图案的外边缘之外的位置处。桥接布线30用作共面线并抑制电磁场的发生。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2005072725A Communication functional circuit 审中-公开
标题翻译：通讯功能电路
公开(公告)号：JP2005072725A
公开(公告)日：2005-03-17
申请号：JP2003296829
申请日：2003-08-20
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： KAIZAKI YASUHIRO , SAWAI TETSUO
IPC分类号： H03F3/45 , H03D7/14 , H03H11/32 , H04B1/26
CPC分类号： H03F2200/372
摘要： PROBLEM TO BE SOLVED: To provide a communication functional circuit which efficiently reduces interference by neighboring frequency bands and is suitable for broadband communication.
SOLUTION: In the communication circuit having functional circuits such as a mixer, an amplifier and a balun, a filter is provided between sources or between emitters of paired transistors M1 and M2 being constituents of each of the functional circuits, thereby controlling gains of the functional circuits in a specific frequency band.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种有效降低相邻频带干扰的通信功能电路，适用于宽带通信。解决方案：在具有诸如混频器，放大器和平衡 - 不平衡转换器的功能电路的通信电路中，在源之间或成对晶体管M1和M2的发射极之间提供滤波器，作为每个功能电路的组成部分，从而控制增益的功能电路。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JPH09298483A MICROWAVE INTEGRATED CIRCUIT 失效
公开(公告)号：JPH09298483A
公开(公告)日：1997-11-18
申请号：JP13053496
申请日：1996-04-30
申请人： SANYO ELECTRIC CO
发明人： SAWAI TETSUO , HONDA KEIICHI , HIRAI TOSHIKAZU , UDA NAONORI , HARADA YASOO
IPC分类号： H01P1/15 , H04B1/44
摘要： PROBLEM TO BE SOLVED: To reduce the number of components and the manufacturing cost and to make the device of the circuit small. SOLUTION: In this microwave integrated circuit, a transmission system between an antenna terminal ANT and a transmission terminal TX, an antenna switch AS conducting switching connection of a reception system between the ANT and a reception terminal RX, and a low noise amplifier(LNA) placed between the ANT and the RX and amplifying a reception signal are integrated into one chip and a field-effect transistor(FET) 6 being a component of the LNA is used in common for a receiver side switching element of the AS so as to reduce the number of components. In the case of transmission, a FET 2 of the AS is conductive, a FET 1 is nonconductive and the FET 6 of the LNA acts like an attenuator, the transmission signal is sent from the TX to the ANT. In the case of reception, the FET 6 of the LNA acts like an amplifier, the FET 2 of the AS is nonconductive, the FET 1 is conductive and the received signal is amplified and sent from the ANT to the RX.

4. 发明专利

JPH08330517A INTEGRATED CIRCUIT DEVICE AND RESONANT CIRCUIT 失效
公开(公告)号：JPH08330517A
公开(公告)日：1996-12-13
申请号：JP13365095
申请日：1995-05-31
申请人： SANYO ELECTRIC CO
发明人： NISHIDA MASAO , SAWAI TETSUO , HONDA KEIICHI , UDA NAONORI , HIRAI TOSHIKAZU , HARADA YASOO
IPC分类号： H01F27/00 , H01F17/00 , H01G4/40 , H01L21/822 , H01L27/04 , H03H5/02
摘要： PURPOSE: To reduce wiring by decreasing the occupation area of an integrated circuit device using a resonant circuit. CONSTITUTION: An MIM capacitor 20 consisting of a lower metal layer 21, an insulation layer, and an upper metal layer 62 is arranged at the empty region at the center of a spiral inductor 10 consisting of an upper metal layer 61. The edge part inside the upper metal layer 61 of the inductor 10 is connected to the lower metal layer 21 of the capacitor 20 via a contact hole 41 and the edge part outside the upper metal layer 61 of the inductor 10 is connected to a lower metal layer 22 via a contact hole 42. The upper metal layer 62 of the capacitor 20 is connected to the lower metal layer 20 via a contact hole 43.

5. 发明专利

JPH08148953A AMPLIFIER AND COMMUNICATION EQUIPMENT 失效
公开(公告)号：JPH08148953A
公开(公告)日：1996-06-07
申请号：JP28230794
申请日：1994-11-16
申请人： SANYO ELECTRIC CO
发明人： SAWAI TETSUO , HONDA KEIICHI , NISHIDA MASAO , UDA NAONORI , HIRAI TOSHIKAZU , HARADA YASOO
IPC分类号： H03G3/30 , H03G3/00 , H04B1/3822 , H04B1/40
摘要： PURPOSE: To provide an amplifier serving for both transmission and reception stably operated in both transmission mode and reception mode with simple circuit constitution by performing feedback from a feedback circuit provided with a feedback resistor whose resistance value is variable and a second active element for the feedback to a first active element for amplification. CONSTITUTION: The feedback from the feedback circuit provided with the feedback resistor R2 whose resistance value is variable and the second active element (FET2) for the feedback is performed to the first active element (FET1) for the amplification. For instance, a resistor is inserted between the drain of the FET1 for the amplification and the gate of the FET2, the feedback is performed by the resistor, gate bias is linked also with a feedback resistor part, a feedback amount is controlled and coping is performed at the time of the reception and at the time of the transmission. That is, at the time of the reception (when the gate bias is deep), the value of the feedback resistor is made large, the feedback amount to the FET1 is reduced and largest possible gain is obtained. At the time of the transmission, the resistance value is made small, the feedback amount is increased and the gain is stabilized small.

6. 发明专利

JPH0832366A BIAS CIRCUIT 失效
公开(公告)号：JPH0832366A
公开(公告)日：1996-02-02
申请号：JP16782094
申请日：1994-07-20
申请人： SANYO ELECTRIC CO
发明人： SAWAI TETSUO , NISHIDA MASAO , UDA NAONORI , HARADA YASOO
IPC分类号： H01P1/00 , H03F3/195 , H03F3/60
摘要： PURPOSE:To obtain the bias circuit whose occupied area is small and which is mounted on a same chip together with a signal processing circuit by forming a drain bias circuit with plural parallel resonance circuits connected in series. CONSTITUTION:A parallel resonance circuit 41 comprising an inductor L4 and a capacitor C8 is connected between a drain of a 1st stage FET 1 and a drain of a 2nd stage FET 2. Parallel resonance circuits 42, 43 of the similar configuration are connected in series with the circuit 41 and the three parallel resonance circuits 41 to 43 form the drain bias circuit, then the bias circuit whose occupied area is small and which is mounted on a same chip together with a signal processing circuit or the like is realized.

7. 发明专利

JPH07154109A MICROWAVE INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH07154109A
公开(公告)日：1995-06-16
申请号：JP30057993
申请日：1993-11-30
申请人： SANYO ELECTRIC CO
发明人： SAWAI TETSUO , HIRAI TOSHIKAZU , UDA NAONORI , HARADA YASOO
IPC分类号： H01L25/00 , H01P3/08 , H01P5/02 , H01P5/08 , H03D9/06 , H03F3/60
摘要： PURPOSE:To make the device small in size by providing a conductor wire forming an impedance element in the vicinity of a monolithic microwave integrated circuit MMIC element and providing the impedance transmission to a board. CONSTITUTION:An input signal of a frequency 11.7GHz is inputted to an input section 9 and mixed with a local oscillation signal of a frequency 10.7GHz received from an external oscillator by means of a dual gate field effect transistor TR. As a result, a transmission frequency (f) of an impedance transformer Q connecting to the MMIC element is 1GHz. A semiconductor substrate 8 on which the MMIC element is formed is provided at the center part of a support board 11, a conductor wire P being a component of the transformer Q is provided around onto the board 1 in the vicinity of the substrate 8 and capacitors C2, C3 are formed on the board. Thus, the microwave integrated circuit device having the impedance transformer is made small in size.

8. 发明专利

JPH0548301A MICROWAVE INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0548301A
公开(公告)日：1993-02-26
申请号：JP20698091
申请日：1991-08-19
申请人： SANYO ELECTRIC CO
发明人： SAWAI TETSUO
IPC分类号： H01L21/3205 , H01L23/52 , H01P1/00 , H01P5/02 , H01P5/08 , H03F3/60
摘要： PURPOSE:To make the microwave integrated circuit device small by utilizing a space above the printed circuit board for a space for forming a bias circuit. CONSTITUTION:A case H is provided with through-capacitors 8, 9 and conductors 10, 11 whose effective length is equivalent to a 1/4 wavelength of a transmission signal between the through-capacitors 8, 9 and lines 1,3 on the printed circuit board, and a bias circuit applying a bias signal to an active element 2 of a printed circuit board B is formed in a space between the printed circuit board B and the case H in which the printed circuit board B is accommodated.

9. 发明专利

JP2008187152A CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：JP2008187152A
公开(公告)日：2008-08-14
申请号：JP2007021882
申请日：2007-01-31
申请人： SANYO ELECTRIC CO
发明人： YAMAMOTO TETSUYA , OKAYAMA YOSHIHISA , YANASE YASUYUKI , SAWAI TETSUO
IPC分类号： H01L23/12
摘要： PROBLEM TO BE SOLVED: To suppress warpage in a circuit device manufactured by a wafer level package technique. SOLUTION: A semiconductor substrate 20 used by the circuit device 10 has a circuit element 22, and an electrode 24 connected to the circuit element 22. A wiring layer 40 having a projection 41 connected to the electrode 24 is provided at the side of the main surface of the semiconductor substrate 20, and a metal layer 70 is provided at a side opposite to the main surface of the semiconductor substrate 20. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2008182207A Semiconductor module and portable apparatus 有权
标题翻译：半导体模块和便携式设备
公开(公告)号：JP2008182207A
公开(公告)日：2008-08-07
申请号：JP2007323180
申请日：2007-12-14
申请人： Sanyo Electric Co Ltd , 三洋電機株式会社
发明人： IMAOKA SHUNICHI , OTSUKA KENJI , SAWAI TETSUO
IPC分类号： H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/15311 , H01L2924/30107 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module which can preferably control the noise propagation between laminated circuit elements.
SOLUTION: The semiconductor module includes a multi-layer substrate 20, a first circuit element 30 which is mounted on the multi-layer substrate 20, a second circuit element 50 which is laminated on the first circuit element 30, an interposer substrate 10 which is located between the first circuit element 30 and second circuit element 50 and contains an antenna conductor portion 3a, a passive element 40 which is mounted on the multi-layer substrate 20 and is connected with the antenna conductor portion 3a, and a sealing resin layer 70 which seals each elements. The antenna conductor portion 3a is composed of a wiring pattern spirally formed, and both of its ends are connected with the passive element 40 through a bonding wire 60b. Thereby, the antenna conductor portion 3a functions as a loop antenna where the passive element 40 is interposed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以优选地控制层压电路元件之间的噪声传播的半导体模块。解决方案：半导体模块包括多层基板20，安装在多层基板20上的第一电路元件30，层叠在第一电路元件30上的第二电路元件50，插入基板 10，其位于第一电路元件30和第二电路元件50之间，并且包含天线导体部分3a，安装在多层基板20上并与天线导体部分3a连接的无源元件40和密封树脂层70，其密封每个元件。天线导体部3a由螺旋形状的布线图形构成，其两端都通过接合线60b与无源元件40连接。由此，天线导体部3a作为插入无源元件40的环形天线发挥作用。版权所有（C）2008，JPO＆INPIT

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