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1. 发明专利

JP2012104615A High frequency switch and high frequency module 审中-公开
标题翻译：高频开关和高频模块
公开(公告)号：JP2012104615A
公开(公告)日：2012-05-31
申请号：JP2010251336
申请日：2010-11-09
申请人： Panasonic Corp , パナソニック株式会社
发明人： KONO HIROAKI , KOIZUMI HARUHIKO , WAKITA KAZUYA
IPC分类号： H01L21/338 , H01L21/822 , H01L21/8232 , H01L27/04 , H01L27/06 , H01L27/095 , H01L29/423 , H01L29/778 , H01L29/812 , H03K17/693
CPC分类号： H03F3/72 , H03F2200/111 , H03F2200/451 , H03F2203/7209 , H03F2203/7236 , H03K17/102 , H03K17/693
摘要： PROBLEM TO BE SOLVED: To provide a high frequency switch and a high frequency module having excellent distortion characteristics without increasing the insertion loss or the chip size.SOLUTION: The high frequency switch comprises a plurality of I/O terminals 101-103 for inputting/outputting high frequency signals, basic switches 104, 105 provided between two input terminals 101, 103, and control terminals 106, 107, into which a control voltage for controlling conduction and interruption of the basic switches 104, 105 are entered. The basic switches 104, 105 are formed by connecting meandered FET110-113 and FET120-123 having meandered gate electrodes in multi-stage. Out of the FET110-113 and FET120-123, the FET113 and 120, with the shortest electrical distance from the I/O terminal 103 have finger lengths shorter than those of other FET110-112 and 121-123.
摘要翻译：要解决的问题：提供具有优异失真特性的高频开关和高频模块，而不增加插入损耗或芯片尺寸。解决方案：高频开关包括多个用于输入/输出高频信号的I / O端子101-103，设置在两个输入端子101,103和控制端子106,107之间的基本开关104,105 输入用于控制基本开关104,105的导通和中断的控制电压。基本开关104,105是通过连接多级的具有蜿蜒的栅电极的曲折FET110-113和FET120-123形成的。在FET110-113和FET120-123中，距离I / O端子103具有最短电气距离的FET113和120具有短于其它FET110-112和121-123的指状长度的指状长度。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2008288678A Signal amplifier device 有权
标题翻译：信号放大器装置
公开(公告)号：JP2008288678A
公开(公告)日：2008-11-27
申请号：JP2007129127
申请日：2007-05-15
申请人： Panasonic Corp , パナソニック株式会社
发明人： KONO HIROAKI
IPC分类号： H03G3/30 , H03F1/32 , H03F1/34 , H04B1/04
摘要： PROBLEM TO BE SOLVED: To provide a signal amplifier device capable of securing stable output characteristics, without causing increase in power consumption.
SOLUTION: The signal amplifier device comprises a first amplifier unit with variable gain which amplifies an input signal; a second amplifier unit with a fixed gain which further amplifies the signal amplified by the first amplifier unit; an output power detector which outputs the output power of the second amplifier unit; a source voltage control unit which detects the power consumption of the second amplifier unit and calculates a source voltage correction amount obtained from the difference between the detected power consumption and reference power consumption, corresponding to a transmission power specification value input from outside to control the source voltage to be supplied to the second amplifier unit, based on the source voltage correction value; and an automatic power control unit which calculates a power correction value from an output power value detected by the output power detector and the transmission power specification value, adjusts the transmission power specification value, based on the calculated power correction amount and source voltage correction amount for controlling the gain of the first amplifier unit, according to the adjusted transmission power specification value, and supplies the signal amplified by the second amplifier unit to a load.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够确保稳定的输出特性而不引起功耗的增加的信号放大器装置。解决方案：信号放大器装置包括具有放大输入信号的可变增益的第一放大器单元; 具有固定增益的第二放大器单元，其进一步放大由第一放大器单元放大的信号; 输出功率检测器，其输出第二放大器单元的输出功率; 源电压控制单元，其检测第二放大器单元的功耗，并且计算从检测到的功耗和参考功耗之间的差获得的源电压校正量，对应于从外部输入的发送功率指定值来控制源基于源电压校正值向第二放大器单元提供的电压; 以及自动电力控制单元，其根据由输出功率检测器检测的输出功率值和发送功率指定值计算功率校正值，并根据计算出的功率校正量和源电压校正量来调整发送功率指定值根据调整后的发送功率指定值来控制第一放大器单元的增益，并将由第二放大器单元放大的信号提供给负载。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2011024094A Semiconductor device, radio frequency circuit, and radio frequency power amplifier 审中-公开
标题翻译：半导体器件，无线电频率电路和无线电频率功率放大器
公开(公告)号：JP2011024094A
公开(公告)日：2011-02-03
申请号：JP2009168865
申请日：2009-07-17
申请人： Panasonic Corp , パナソニック株式会社
发明人： KAIDO JUNJI , INAMORI MASAHIKO , SONETAKA SHINICHI , KONO HIROAKI
IPC分类号： H03K17/687 , H01L21/338 , H01L29/80 , H01L29/812 , H03K17/693 , H04B1/04
CPC分类号： H01L29/7839 , H03F3/195 , H03F2200/111
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a radio frequency circuit which are appropriate for multiband or multimode.
SOLUTION: The semiconductor device with a field-effect transistor formed on a semiconductor substrate 301 includes ohmic electrodes 501a and 501b serving as source and drain electrodes of the field-effect transistor, Schottky electrodes 601a and 601c provided between the ohmic electrodes 501a and 501b to serve as gate electrodes of the field-effect transistor, and a Schottky electrode 601b provided between the Schottky electrodes 601a and 601c, wherein the Schottky electrode 601b is grounded.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供适用于多频带或多模的半导体器件和射频电路。形成在半导体衬底301上的具有场效应晶体管的半导体器件包括用作场效应晶体管的源极和漏极的欧姆电极501a和501b，设置在欧姆电极501a之间的肖特基电极601a和601c 和501b作为场效应晶体管的栅电极，肖特基电极601b设置在肖特基电极601a和601c之间，其中肖特基电极601b接地。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010278407A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2010278407A
公开(公告)日：2010-12-09
申请号：JP2009132584
申请日：2009-06-01
申请人： Panasonic Corp , パナソニック株式会社
发明人： KONO HIROAKI , YOKOYAMA TAKAHIRO , MAKIOKA TOSHIFUMI , SONETAKA SHINICHI
IPC分类号： H01L27/095 , H01L21/338 , H01L21/822 , H01L21/8232 , H01L21/8238 , H01L27/04 , H01L27/06 , H01L27/092 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that improves strain characteristics.
SOLUTION: The semiconductor device includes: substrate potential controlling semiconductor layers 902 and 903 provided for a first FET 103 and a second FET 113, respectively; an element isolation region 901 that is provided in a semiconductor substrate and electrically isolates the substrate potential controlling semiconductor layers 902 and 903; a first substrate potential controlling electrode 108 and a second substrate potential controlling electrode 118 that are provided for the respective substrate potential controlling semiconductor layers 902 and 903; and first substrate potential controlling signal sources 109 and second substrate potential controlling signal sources 119 that are provided for the respective first substrate potential controlling electrode 108 and second substrate potential controlling electrode 118 and apply a high voltage or a low voltage to the respective substrate potential controlling electrodes.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种改善应变特性的半导体器件。解决方案：半导体器件包括：分别为第一FET 103和第二FET 113提供的衬底电位控制半导体层902和903; 元件隔离区域901，其设置在半导体衬底中并电隔离衬底电位控制半导体层902和903; 为每个基板电位控制半导体层902和903设置的第一基板电位控制电极108和第二基板电位控制电极118; 以及为各个第一基板电位控制电极108和第二基板电位控制电极118提供的第一基板电位控制信号源109和第二基板电位控制信号源119，并且对各个基板电位控制施加高电压或低电压电极。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009094721A Polar modulation transmitter and radio communication equipment, and polar modulation transmission method 有权
标题翻译：极性调制发射机和无线电通信设备以及极性调制传输方法
公开(公告)号：JP2009094721A
公开(公告)日：2009-04-30
申请号：JP2007262393
申请日：2007-10-05
申请人： Panasonic Corp , パナソニック株式会社
发明人： MIURA RITSU , YASUNAGA TAKESHI , KONO HIROAKI
IPC分类号： H04B1/04
摘要： PROBLEM TO BE SOLVED: To suppress a rise of a case body temperature while maintaining antenna emission power equal to a transmitter of an orthogonal modulation system or larger with respect to the impedance fluctuation of an antenna.
SOLUTION: The polar modulation transmitter 100 is provided with a power amplifier 105 for separating an amplitude modulation component and a phase modulation component included in an input signal from the input signal to be transmitted and for performing power amplification of the amplitude modulation component and the phase modulation component in channels independent from each other, a current detection part 112 for detecting the current consumption of the power amplifier 105; an output power switch 108 capable of switching two or more kinds of the output power of the power amplifier 105; and a power-down control unit 113 for giving a prescribed power-down signal to the output power switch 108 when the magnitude of power consumption detected by the current detection part 112 exceeds a prescribed threshold.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了抑制与正交调制系统的发射机等于或更大的天线发射功率相对于天线的阻抗波动而保持壳体温度的上升。解决方案：极坐标调制发射机100设置有功率放大器105，用于从要发射的输入信号中分离包括在输入信号中的振幅调制分量和相位调制分量，并且用于执行幅度调制分量的功率放大和彼此独立的通道中的相位调制分量，用于检测功率放大器105的电流消耗的电流检测部分112; 输出功率开关108，其能够切换功率放大器105的两种以上的输出功率; 以及当由当前检测部分112检测到的功耗的大小超过规定的阈值时，向输出功率开关108给出规定的掉电信号的断电控制单元113。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2015015409A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2015015409A
公开(公告)日：2015-01-22
申请号：JP2013142299
申请日：2013-07-08
申请人：パナソニック株式会社 , Panasonic Corp
发明人： KONO HIROAKI , KANEGA WATARU
IPC分类号： H01L21/338 , H01L21/768 , H01L23/522 , H01L29/812
摘要：【課題】ゲート抵抗を低減しつつCgdの増大を抑制し、もって半導体装置の高周波利得を向上させる。【解決手段】FETの層構造が形成された基板127の上にパッド電極を備えたソース配線100、パッド電極を備えたドレイン配線104、コンタクト106、ソース電極108、ドレイン電極110、第1のゲート電極112、第2のゲート電極114が形成されている。第1のゲート電極112および第2のゲート電極114の一方の端部は、信号入力部である第1のゲート配線116にて接続され、もう一方の端部は終端部である第2のゲート配線118にて接続されている。ソース配線100およびドレイン配線104、第1のゲート電極112および第2のゲート電極114は、長手方向において互いに平行になるように配置されている。【選択図】図1
摘要翻译：要解决的问题：为了抑制Cgd（栅 - 漏寄生电容）的增加，同时降低栅极电阻，从而提高半导体器件的高频增益。解决方案：在半导体器件中，源极布线100包括焊盘电极，漏极在形成FET层结构的基板127上形成包括焊盘电极，触点106，源电极108，漏电极110，第一栅电极112和第二栅电极114的布线104。第一栅电极112和第二栅电极114的一端由作为信号输入部的栅极布线116连接，另一端由作为终端部的第二栅极布线118连接。源极布线100和漏极布线104以及第一栅电极112和第二栅电极114被布置为在较长的方向上彼此平行。

7. 发明专利

JP2014143584A Transmitter and transmitter receiver 审中-公开
标题翻译：发射机和发射机接收机
公开(公告)号：JP2014143584A
公开(公告)日：2014-08-07
申请号：JP2013010987
申请日：2013-01-24
申请人： Panasonic Corp , パナソニック株式会社
发明人： MATSUNOSHITA MASAHIRO , KONO HIROAKI , MASUDA TATSUYA , KOBAYASHI EISUKE , OKOCHI YOSHIAKI
IPC分类号： H04B1/04 , H03F3/24
摘要： PROBLEM TO BE SOLVED: To achieve stabilized transmission characteristics while reducing power consumption and saving the space, without using an isolator and without providing a current detector for detecting the operation current of a power amplification circuit in a transmitter, and the like.SOLUTION: A transmitter includes a power amplification circuit (power amplifier) 10 for amplifying a high frequency signal, a variable load (transmission side variable load) 20 having one end connected with the output of the power amplification circuit 10, an antenna element 40 for transmitting the signal amplified by the power amplification circuit 10, a temperature sensor 50 for measuring the temperature of the power amplification circuit 10, and a control unit 60 for detecting variation of load state on the output side of the power amplification circuit 10 based on the information of temperature measured by the temperature sensor 50, and adjusting the characteristics of the variable load 20 so as to compensate for the variation.
摘要翻译：要解决的问题：为了实现稳定的传输特性，同时降低功耗并节省空间，而不使用隔离器，并且不提供用于检测发射机中的功率放大电路的工作电流的电流检测器等。解决方案：A 发射机包括用于放大高频信号的功率放大电路（功率放大器）10，具有与功率放大电路10的输出连接的一端的可变负载（发送侧可变负载）20，用于发送信号的天线元件40 由功率放大电路10放大，用于测量功率放大电路10的温度的温度传感器50，以及用于根据温度信息检测功率放大电路10的输出侧的负载状态变化的控制单元60 由温度传感器50测量，并调节可变负载20的特性以补偿变化。

8. 发明专利

JP2014138192A Radio communication terminal and radio communication system 审中-公开
标题翻译：无线电通信终端和无线电通信系统
公开(公告)号：JP2014138192A
公开(公告)日：2014-07-28
申请号：JP2013004237
申请日：2013-01-15
申请人： Panasonic Corp , パナソニック株式会社
发明人： KOBAYASHI EISUKE , MATSUNOSHITA MASAHIRO , OKOCHI YOSHIAKI , KONO HIROAKI , MASUDA TATSUYA
IPC分类号： H04B17/00 , H04B1/40 , H04M1/24 , H04W88/02 , H04W88/06
摘要： PROBLEM TO BE SOLVED: To prevent a radio communication terminal, in the case where it comprises a plurality of radio terminals coping with a plurality of radio modes, from increasing in a mounting area, causing component layout constraint, and increasing in size of the radio communication terminal, while it enables each of the plurality of radio circuits to be inspected from the outside of the radio communication terminal with one RF connector.SOLUTION: A radio communication terminal 1 comprises: a plurality of antennas 2; a plurality of radio circuits 3 corresponding to the plurality of antennas 2; an RF connector 4 for inspecting the plurality of radio circuits 3; and a switch group 5 for selecting one radio circuit from the plurality of radio circuits 3 and connecting it to the RF connector 4.
摘要翻译：要解决的问题：为了防止无线电通信终端在包括多个处理多个无线电模式的无线电终端的情况下从安装区域的增加，导致组件布局约束和无线电的大小增加通信终端，同时能够利用一个RF连接器从无线电通信终端的外部检查多个无线电电路中的每一个。解决方案：无线电通信终端1包括：多个天线2; 对应于多个天线2的多个无线电电路3; 用于检查多个无线电电路3的RF连接器4; 以及用于从多个无线电电路3中选择一个无线电电路并将其连接到RF连接器4的开关组5。

9. 发明专利

JP2009065304A High-frequency switch apparatus 审中-公开
标题翻译：高频开关装置
公开(公告)号：JP2009065304A
公开(公告)日：2009-03-26
申请号：JP2007229643
申请日：2007-09-05
申请人： Panasonic Corp , パナソニック株式会社
发明人： YANAI HIRONAO , ANDA YOSHIHARU , KONO HIROAKI
IPC分类号： H03K17/687
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency switch apparatus capable of preventing deterioration in current driving capability caused by the substrate bias effect during ON state of a transistor, and operating with low insertion loss and low signal distortion.
SOLUTION: Each of source drains of a switching transistor 106 is connected to high-frequency signal input/output terminals 101 and 102 of through capacitor elements 110 and 111 for DC cut. A second DC terminal 104 is connected to a gate of the switching transistor 106 through a resistor 107, and a fixed voltage potential is impressed on the gate of the switching transistor 106. A first DC terminal 103 is connected to the source drain through resistors 108 and 109, and a control voltage potential of the switching transistor is impressed on the source drain. A third DC terminal 105 is connected to a substrate of the switching transistor, and a fixed voltage potential is impressed on the substrate.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够防止由晶体管导通状态下的衬底偏置效应引起的电流驱动能力的劣化，低插入损耗和低信号失真的高频开关装置。解决方案：开关晶体管106的每个源极漏极连接到贯穿电容器元件110和111的用于直流切割的高频信号输入/输出端子101和102。第二直流端子104通过电阻器107连接到开关晶体管106的栅极，并且固定的电位电压施加在开关晶体管106的栅极上。第一直流端子103通过电阻器108连接到源极漏极和109，并且开关晶体管的控制电压电位施加在源极漏极上。第三DC端子105连接到开关晶体管的基板，并且固定的电位电压施加在基板上。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2011249485A Switching element, high frequency signal switch and high frequency signal amplification module 审中-公开
标题翻译：开关元件，高频信号开关和高频信号放大模块
公开(公告)号：JP2011249485A
公开(公告)日：2011-12-08
申请号：JP2010119856
申请日：2010-05-25
申请人： Panasonic Corp , パナソニック株式会社
发明人： KONO HIROAKI
IPC分类号： H01L29/80 , H01L21/338 , H01L29/41 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812
CPC分类号： H04B1/48 , H01L27/0605 , H01L29/0692 , H01L29/205 , H01L29/4238 , H01L29/7371 , H01L29/7831 , H01L29/8124
摘要： PROBLEM TO BE SOLVED: To provide a compact switching element which is formed on a semiconductor substrate in order to switch a high frequency signal path and achieves low distortion characteristics.SOLUTION: An FET 100, i.e. one example of switching elements, comprises two interdigital source-drain electrodes 101 formed on a semiconductor substrate 109, at least two gate electrodes 102 arranged to crawl between two source-drain electrodes 101, and a conductive layer 103 arranged along the adjoining gate electrodes 102 while being sandwiched therebetween. A layer located directly under a linear part 108, i.e. a part of the gate electrode 102 parallel with a finger-like part of the two source-drain electrodes 101, is electrically separated from a layer located directly under a bent part 107, i.e. a part of the gate electrode 102 connecting a pair of adjoining linear parts 108.
摘要翻译：要解决的问题：为了提供形成在半导体衬底上的紧凑的开关元件，以切换高频信号路径并实现低失真特性。解决方案：FET100，即开关元件的一个示例，包括形成在半导体衬底109上的两个交叉指向源极 - 漏极电极101，布置成在两个源极 - 漏极电极101之间爬行的至少两个栅电极102和导电层103沿着相邻的栅电极102排列，同时夹在它们之间。位于直线部分108正下方的层，即与两个源极 - 漏极电极101的指状部分平行的栅电极102的一部分与位于弯曲部分107正下方的层电分离，即，连接一对邻接线性部分108的栅电极102的一部分。版权所有（C）2012，JPO＆INPIT

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