专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011101405A High-frequency power amplifier 审中-公开
标题翻译：高频功率放大器
公开(公告)号：JP2011101405A
公开(公告)日：2011-05-19
申请号：JP2010290473
申请日：2010-12-27
申请人： Panasonic Corp , パナソニック株式会社
发明人： INAMORI MASAHIKO , MATSUDA SHINGO , MAKIHARA HIROKAZU , MATSUI KENTA , ENOMOTO SHINGO , KOIZUMI HARUHIKO , TATSUOKA KAZUKI
IPC分类号： H03F1/30 , H03F1/02
CPC分类号： Y02B60/50
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier capable of performing high-efficiency operation over a wide range of output power even at a temperature variation. SOLUTION: A high frequency signal is inputted through a capacitor C1 to a base of a power amplification transistor Q0 of an RF amplifier 11, and a reference voltage applying terminal VREF1 is connected to the base through a high output bias circuit B1 including a temperature compensation circuit T1, furthermore, a reference voltage applying terminal VREF2 is connected to the base through a low output bias circuit B2 including a temperature compensation circuit T2, and bias voltages VDC to the bias circuits B1, B2 are connected in common. Furthermore, a collector of the power amplification transistor Q0 outputs a high frequency signal through a capacitor C2, and its emitter is grounded. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：即使在温度变化的情况下，也能够提供能够在宽范围的输出功率下进行高效率运行的高频功率放大器。解决方案：通过电容器C1将高频信号输入到RF放大器11的功率放大晶体管Q0的基极，并且参考电压施加端子VREF1通过高输出偏置电路B1连接到基极，包括此外，温度补偿电路T1，通过包括温度补偿电路T2的低输出偏置电路B2将参考电压施加端子VREF2连接到基极，并且偏置电路B1，B2的偏置电压VDC共同连接。此外，功率放大晶体管Q0的集电极通过电容器C2输出高频信号，其发射极接地。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011061448A High frequency power amplifier 审中-公开
标题翻译：高频功率放大器
公开(公告)号：JP2011061448A
公开(公告)日：2011-03-24
申请号：JP2009208326
申请日：2009-09-09
申请人： Panasonic Corp , パナソニック株式会社
发明人： MAKIOKA TOSHIFUMI , ENDO ISATAKA , INAMORI MASAHIKO
IPC分类号： H03F1/02 , H03F3/19 , H03F3/21 , H04B1/04
摘要： PROBLEM TO BE SOLVED: To attain successful high frequency characteristics even in low output in a multi-mode, or multi-band high frequency power amplifier configured by connecting a plurality of power amplifiers in parallel that collectively receive high frequency signal inputs with relatively close frequency bands.
SOLUTION: In the multi-mode, multi-band amplifier configured by connecting the plurality of power amplifiers 101, 102 in parallel, a switch 2 is connected between collectors Vcc1, Vcc2 of the power amplifiers 101, 102, a voltage regulator 13 and a power supply Vbat. The switch 2 supplies, when, for example, the power amplifier 101 operates, a voltage adjusted by the voltage regulator 13 to the collector of the power amplifiers 101, and supplies a voltage of the power supply Vbat to the collector of the power amplifier 102 in off state. Since collector voltage of the power amplifier 102 in off state does not fall, deterioration in pass isolation of the power amplifier is reduced.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：即使在多模式或多频带高频功率放大器中即使在低输出下也能获得成功的高频特性，该多波段高频功率放大器通过并联连接多个功率放大器而共同接收高频信号输入，相对较近的频段。解决方案：在通过并联连接多个功率放大器101,102而配置的多模式多波段放大器中，开关2连接在功率放大器101,102的集电极Vcc1，Vcc2之间，电压调节器 13和电源Vbat。当例如功率放大器101操作时，开关2将由电压调节器13调整的电压提供给功率放大器101的集电极，并将电源Vbat的电压提供给功率放大器102的集电极处于关闭状态。由于处于断开状态的功率放大器102的集电极电压不下降，功率放大器的通过隔离的劣化降低。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2008294977A High-frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：JP2008294977A
公开(公告)日：2008-12-04
申请号：JP2007140911
申请日：2007-05-28
申请人： Panasonic Corp , パナソニック株式会社
发明人： MAKIHARA HIROKAZU , KOIZUMI HARUHIKO , TATSUOKA KAZUKI , INAMORI MASAHIKO , MATSUDA SHINGO
IPC分类号： H03F1/52 , H03F3/21
CPC分类号： H03F1/52 , H03F3/19
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier which prevents a post-stage HBT from being destroyed. SOLUTION: A high-frequency power amplifier includes: a first amplification stage including a first hetero-bipolar transistor in which collector output is detected; a second amplification stage which is provided on a stage before the first amplification stage and includes a second hetero-bipolar transistor with a result of the detection reflected thereon; a first resistor inserted between a collector of the second hetero-bipolar transistor and a power source; and a protection circuit which is connected between a collector of the first hetero-bipolar transistor and the collector of the second hetero-bipolar transistor, detects the output of the collector of the first hetero-bipolar transistor and decreases a collector voltage of the second hetero-bipolar transistor in accordance with the relevant output. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种防止后级HBT被破坏的高频功率放大器。解决方案：高频功率放大器包括：第一放大级，包括检测集电极输出的第一异质双极晶体管; 第二放大级，其设置在第一放大级之前的级上，并且包括其上反射的检测结果的第二异质双极型晶体管; 插入在所述第二异质双极晶体管的集电极和电源之间的第一电阻器; 连接在第一异质双极晶体管的集电极和第二异质双极晶体管的集电极之间的保护电路检测第一异质双极型晶体管的集电极的输出，并降低第二异质双极型晶体管的集电极电压双极晶体管根据相关输出。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2011024094A Semiconductor device, radio frequency circuit, and radio frequency power amplifier 审中-公开
标题翻译：半导体器件，无线电频率电路和无线电频率功率放大器
公开(公告)号：JP2011024094A
公开(公告)日：2011-02-03
申请号：JP2009168865
申请日：2009-07-17
申请人： Panasonic Corp , パナソニック株式会社
发明人： KAIDO JUNJI , INAMORI MASAHIKO , SONETAKA SHINICHI , KONO HIROAKI
IPC分类号： H03K17/687 , H01L21/338 , H01L29/80 , H01L29/812 , H03K17/693 , H04B1/04
CPC分类号： H01L29/7839 , H03F3/195 , H03F2200/111
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a radio frequency circuit which are appropriate for multiband or multimode.
SOLUTION: The semiconductor device with a field-effect transistor formed on a semiconductor substrate 301 includes ohmic electrodes 501a and 501b serving as source and drain electrodes of the field-effect transistor, Schottky electrodes 601a and 601c provided between the ohmic electrodes 501a and 501b to serve as gate electrodes of the field-effect transistor, and a Schottky electrode 601b provided between the Schottky electrodes 601a and 601c, wherein the Schottky electrode 601b is grounded.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供适用于多频带或多模的半导体器件和射频电路。形成在半导体衬底301上的具有场效应晶体管的半导体器件包括用作场效应晶体管的源极和漏极的欧姆电极501a和501b，设置在欧姆电极501a之间的肖特基电极601a和601c 和501b作为场效应晶体管的栅电极，肖特基电极601b设置在肖特基电极601a和601c之间，其中肖特基电极601b接地。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009253728A High-frequency power amplifier 审中-公开
标题翻译：高频功率放大器
公开(公告)号：JP2009253728A
公开(公告)日：2009-10-29
申请号：JP2008100299
申请日：2008-04-08
申请人： Panasonic Corp , パナソニック株式会社
发明人： MATSUDA SHINGO , MAKIHARA HIROKAZU , TATSUOKA KAZUKI , INAMORI MASAHIKO
IPC分类号： H03F1/30 , H03F3/189 , H03F3/20
CPC分类号： H03F3/245 , H03F1/0261 , H03F1/302 , H03F3/19 , H03F2200/18 , H03F2200/27 , H03F2200/447
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier having a bias circuit capable of performing a sufficient temperature compensation, making it possible to considerably reduce a temperature dependency of idle current of an amplification transistor.
SOLUTION: The high-frequency power amplifier includes a first transistor for power amplification of a high-frequency signal and a bias circuit for supplying a bias current to the first transistor. The bias circuit includes a second transistor having a collector terminal connected to a first power supply, a first resistance element having one end connected to the emitter terminal of the second transistor and the other end connected to the base terminal of the first transistor, a second resistance element having one end connected to the emitter terminal of the second transistor and the other end connected to a ground potential, one or more third resistance elements located between the base terminal of the second transistor and a second power supply, and a plurality of temperature compensation circuits connected to the base terminal of the second transistor to control a base potential of the second transistor so that the potential lowers according to the rise of the temperature.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有能够执行足够的温度补偿的偏置电路的高频功率放大器，使得可以显着降低放大晶体管的空闲电流的温度依赖性。解决方案：高频功率放大器包括用于高频信号功率放大的第一晶体管和用于向第一晶体管提供偏置电流的偏置电路。偏置电路包括具有与第一电源连接的集电极端子的第二晶体管，第一电阻元件，其一端连接到第二晶体管的发射极端子，另一端连接到第一晶体管的基极端子，第二电阻元件电阻元件，其一端连接到第二晶体管的发射极端子，另一端连接到地电位，位于第二晶体管的基极端子和第二电源之间的一个或多个第三电阻元件和多个温度连接到第二晶体管的基极的补偿电路，以控制第二晶体管的基极电位，使得电位随着温度的升高而降低。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010273321A Radio-frequency power amplifier device, and wireless communication device including the same 审中-公开
标题翻译：无线电频率放大器装置和包括其的无线通信装置
公开(公告)号：JP2010273321A
公开(公告)日：2010-12-02
申请号：JP2010019107
申请日：2010-01-29
申请人： Panasonic Corp , パナソニック株式会社
发明人： INAMORI MASAHIKO , IWATA MOTOYOSHI , MOTOYOSHI KANAME , MAEDA MASAHIRO , OTA TOSHIMICHI
IPC分类号： H03F3/24 , H03F3/68
CPC分类号： H04B1/0483 , H03F3/211 , H03F3/24 , H03F2203/21175 , H04B1/006
摘要： PROBLEM TO BE SOLVED: To provide a radio-frequency power amplifier device which responds to a multiband and a multimode, and capable of reducing degradation of reception sensitivity. SOLUTION: This radio-frequency power amplifier device includes: an input terminal IN1 to which a first radio-frequency signal for a CDMA mode within a first frequency band and a third radio-frequency signal for a TDMA mode within the first frequency band are selectively input; an input terminal IN2 to which a second radio-frequency signal for a CDMA mode within a second frequency band and a fourth radio-frequency signal for a TDMA mode within the second frequency band are selectively input; a power amplifier 101 which amplifies the input first radio-frequency signal; a power amplifier 102 which amplifies the input second radio-frequency signal; a power amplifier 103 which amplifies the input third radio-frequency signal; and a power amplifier 104 which amplifies the input fourth radio-frequency signal. The power amplifiers 101, 102, 103 and 104 are arranged side by side in this order. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种对多波段和多模响应并能够降低接收灵敏度降低的射频功率放大器装置。解决方案：该射频功率放大器装置包括：输入端子IN1，第一频率内的CDMA模式的第一射频信号和第一频率内的TDMA模式的第三射频信号带选择性输入; 选择性地输入用于第二频带内的CDMA模式的第二射频信号和第二频带内的TDMA模式的第四射频信号的输入端子IN2; 放大输入的第一射频信号的功率放大器101; 放大输入的第二射频信号的功率放大器102; 功率放大器103，其放大输入的第三射频信号; 以及放大输入的第四射频信号的功率放大器104。功率放大器101,102,103和104依次排列。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2009017028A Transmitter 有权
标题翻译：发射机
公开(公告)号：JP2009017028A
公开(公告)日：2009-01-22
申请号：JP2007174284
申请日：2007-07-02
申请人： Panasonic Corp , パナソニック株式会社
发明人： INAMORI MASAHIKO , MAKIHARA HIROKAZU , TATSUOKA KAZUKI , MATSUDA SHINGO
IPC分类号： H04B1/04
CPC分类号： H03F1/0277
摘要： PROBLEM TO BE SOLVED: To provide a transmitter which is operatable by a low consumption power extensively over a transmission output within a wide range.
SOLUTION: The transmitter has an orthogonal modulator 20, a transmission circuit 30 for polar modulation, corresponding to a high output, a transmission circuit 40 for orthogonal modulation that corresponds to a low output and a first switch 50 and a second switch 60 for changing over the connections with the orthogonal modulator 20, the transmission circuit 30 for polar modulation and the transmission circuit 40 for orthogonal modulation. According to this configuration, the transmission circuit 30 for polar modulation for the high output and the transmission circuit 40 for orthogonal modulation for the low output are fitted discretely, and the transmission circuits are changed over, according to the output powers.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在宽范围内通过传输输出广泛地通过低功耗功率操作的发射机。解决方案：发射机具有正交调制器20，用于极性调制的发射电路30，对应于高输出，用于正交调制的发射电路40对应于低输出，第一开关50和第二开关60 用于切换与正交调制器20的连接，用于极性调制的传输电路30和用于正交调制的传输电路40。根据该结构，用于高输出的极性调制用的发送电路30和用于低输出的正交调制的发送电路40离散地嵌合，根据输出功率切换发送电路。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2011172206A High-frequency power amplifier and wireless communication device including the same 审中-公开
标题翻译：高频功率放大器及其无线通信设备
公开(公告)号：JP2011172206A
公开(公告)日：2011-09-01
申请号：JP2010255388
申请日：2010-11-15
申请人： Panasonic Corp , パナソニック株式会社
发明人： INAMORI MASAHIKO , MOTOYOSHI KANAME , NAKAYAMA MASAO , YAMAMOTO OKITERU , TAKAGI TSUNEHIRO , SUGIYAMA HIROSHI , KAIDO JUNJI
IPC分类号： H03F1/02 , H03F1/56 , H03F3/189 , H03F3/20 , H04B1/04
CPC分类号： H03F1/0211 , H03F1/302 , H03F3/19 , H03F3/24 , H03F2200/18 , H03F2200/447
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier that realizes proper high-frequency characteristics, without the use of isolators, and which realizes low power dissipation.
SOLUTION: A high-frequency power amplifier includes a power amplifier 11 that amplifies high-frequency signals; a voltage supply section 14 that supplies the power amplifier 11 with a collector voltage; a current supply section that supplies the power amplifier 11 with a bias current; and a bias current detection section 13 that detects the bias current. The voltage supply section 14 includes a controller 18, that controls a source voltage to be a first voltage, when the bias current is equal to or less than a reference value of the bias current and controls it to be a second voltage less than the first voltage, when the bias current is larger than the reference value of the bias current.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不使用隔离器的情况下实现适当的高频特性并实现低功耗的高频功率放大器。解决方案：高频功率放大器包括放大高频信号的功率放大器11; 向功率放大器11供给集电极电压的电压供给部14; 向功率放大器11供给偏置电流的电流供给部; 以及检测偏置电流的偏置电流检测部13。电压提供部分14包括控制器18，当偏置电流等于或小于偏置电流的参考值时，控制器将源电压控制为第一电压，并将其控制为小于第一电压的第二电压当偏置电流大于偏置电流的参考值时。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2011055241A High-frequency power amplifier 审中-公开
标题翻译：高频功率放大器
公开(公告)号：JP2011055241A
公开(公告)日：2011-03-17
申请号：JP2009202098
申请日：2009-09-01
申请人： Panasonic Corp , パナソニック株式会社
发明人： MAKIOKA TOSHIFUMI , INAMORI MASAHIKO , IWATA MOTOYOSHI
IPC分类号： H03F3/24 , H03F3/68 , H04B1/04
CPC分类号： H03F3/195 , H03F1/32 , H03F3/24 , H03F2200/111 , H03F2200/222 , H03F2200/387 , H03F2200/414 , H03F2200/417 , H03F2200/421 , H03F2200/429 , H03F2200/451
摘要： PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier which performs multi-band operation and multi-mode operation in each band, and has high isolation.
SOLUTION: The high-frequency power amplifier includes: a power amplifier AMP1 which linearly amplifies a first high-frequency signal of a first frequency band; a power amplifier AMP2 which linearly amplifies a second high-frequency signal of a second frequency band lower than the first frequency band; a power amplifier AMP3 which nonlinearly amplifies a third high-frequency signal of the first frequency band; and a power amplifier AMP4 which nonlinearly amplifies a fourth high-frequency signal of the second frequency band, wherein input lines of the respective power amplifiers AMP1 to AMP4 do not cross each other on semiconductor substrates 120 and 130, and the output lines of the respective power amplifiers AMP1 to AMP4 do not cross each other on the semiconductor substrates 120 and 130.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在每个频带中执行多频带操作和多模式操作的高频功率放大器，并且具有高隔离度。解决方案：高频功率放大器包括：功率放大器AMP1，其对第一频带的第一高频信号进行线性放大; 功率放大器AMP2，其线性放大比第一频带低的第二频带的第二高频信号; 功率放大器AMP3，其非线性地放大第一频带的第三高频信号; 以及功率放大器AMP4，其非线性地放大第二频带的第四高频信号，其中各个功率放大器AMP1至AMP4的输入线在半导体基板120和130上彼此不相交，并且各自的输出线功率放大器AMP1至AMP4在半导体衬底120和130上不互相交叉。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2011015242A Radio frequency power amplifier 审中-公开
标题翻译：无线电频率放大器
公开(公告)号：JP2011015242A
公开(公告)日：2011-01-20
申请号：JP2009158292
申请日：2009-07-02
申请人： Panasonic Corp , パナソニック株式会社
发明人： MAKIHARA HIROKAZU , TATSUOKA KAZUKI , INAMORI MASAHIKO , MATSUDA SHINGO
IPC分类号： H03F3/189 , H03F3/20
CPC分类号： H01Q23/00
摘要： PROBLEM TO BE SOLVED: To provide a high-efficiency high frequency power amplifier that secures high isolation between the output terminals thereof.SOLUTION: The high-frequency power amplifier includes a high-frequency power amplifying element 100; a first switch 109 inserted into a first transmission path for transmitting a first high-frequency signal output from the high-frequency power amplifying element 100; a second transmission portion for transmitting a second high-frequency signal whose frequency is higher than that of the first high-frequency signal output from the high-frequency power amplifying element 100; and a second secondary harmonic wave trap circuit 106 connected to an output terminal 118. In the high-frequency power amplifier, the second transmission portion includes a ground capacitance 107; a second transmission path, a matching circuit 113 of Band-I; and a second switch 110 connected to the second transmission path in series. The second switch 110 connects the second transmission path to the ground capacitance 107, when the first high-frequency signal is amplified and further connects the second transmission path to the matching circuit 113 of the Band-I, when the second high-frequency signal is amplified.
摘要翻译：要解决的问题：提供一种确保其输出端之间的高隔离度的高效率高频功率放大器。解决方案：高频功率放大器包括高频功率放大元件100; 插入到用于发送从高频功率放大元件100输出的第一高频信号的第一传输路径的第一开关109; 第二发送部，用于发送频率高于从高频功率放大元件100输出的第一高频信号的频率的第二高频信号; 以及连接到输出端子118的第二次谐波陷波电路106.在高频功率放大器中，第二传输部分包括接地电容107; 第二传输路径，Band-I的匹配电路113; 以及与第二传输路径串联连接的第二开关110。当第一高频信号被放大时，第二开关110将第二传输路径连接到接地电容107，并且当第二高频信号是第二高频信号时，第二高频信号被放大并且还将第二传输路径连接到频带I的匹配电路113 放大。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式