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1. 发明专利

JP2008091934A Silicon carbide semiconductor device 有权
标题翻译：硅碳化硅半导体器件
公开(公告)号：JP2008091934A
公开(公告)日：2008-04-17
申请号：JP2007284061
申请日：2007-10-31
申请人： Denso Corp , 株式会社デンソー
发明人： KATAOKA MITSUHIRO , NAITO MASAMI , TAKEUCHI YUICHI , RAJESH KUMAR , MATSUNAMI HIROYUKI , KIMOTO TSUNENOBU
IPC分类号： H01L29/80 , H01L21/205 , H01L21/337 , H01L29/808
CPC分类号： H01L29/8083
摘要： PROBLEM TO BE SOLVED: To suppress facet formation in a process of epitaxial growth on the inner wall surface in a trench formed in a substrate.
SOLUTION: A hexagonal SiC substrate, with {11-20} surface set as a main surface, is used in an SiC substrate 90, and a trench groove 91 is formed in the SiC substrate. The trench 91 has a side wall surface inclined by one degree or more from {0001} surface in a sectional shape. An SiC epitaxial layer is formed on the inner wall surface of the trench 91.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：抑制在衬底中形成的沟槽中的内壁表面上的外延生长过程中的刻面形成。解决方案：在SiC衬底90中使用具有ä11-20}表面作为主表面的六方晶系SiC衬底，并且在SiC衬底中形成沟槽91。沟槽91具有从截面形状从ä0001}面倾斜1度以上的侧壁面。在沟槽91的内壁表面上形成SiC外延层。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2005328013A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2005328013A
公开(公告)日：2005-11-24
申请号：JP2004193459
申请日：2004-06-30
申请人： Denso Corp , 株式会社デンソー
发明人： TAKEUCHI YUICHI , MALHAN RAJESH KUMAR , MATSUNAMI HIROYUKI , KIMOTO TSUNENOBU
IPC分类号： H01L21/302 , H01L21/205 , H01L21/336 , H01L21/337 , H01L29/12 , H01L29/78 , H01L29/80 , H01L29/808
CPC分类号： H01L29/7828
摘要： PROBLEM TO BE SOLVED: To improve crystal defects or the profile of the inner wall of a trench, when a trench type semiconductor element is formed using silicon carbide. SOLUTION: After a trench 6, having aspect ratio of 2 or above and trench inclination angle of 80° or above has been formed by dry etching in a substrate 20 of silicon carbide (000-1)C face, damaged region on the inner surface of the trench at the time of dry etching is removed by etching in reduced pressure hydrogen atmosphere at 1,600°C or higher. Damaged region can be removed in a short time, because of the characteristics of high temperature hydrogen. Since surface irregularities and a deterioration layer are not left in the trench after damage is removed, a level derived from the deterioration layer can be eliminated, and surface irregularities can be reduced to a very low level. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：当使用碳化硅形成沟槽型半导体元件时，为了改善沟槽内壁的晶体缺陷或轮廓。解决方案：在碳化硅（000-1）C面的基板20中通过干蚀刻形成具有2以上的纵横比和沟槽倾斜角度为80°以上的沟槽6，损坏区域通过在1600℃以上的减压氢气氛中蚀刻除去干蚀刻时的沟槽的内表面。由于高温氢的特性，损坏的区域可以在短时间内被去除。由于在损伤被去除之后，沟槽中不存在表面凹凸和劣化层，所以可以消除从劣化层导出的水平，并且可以将表面凹凸减小到非常低的水平。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2004079577A Silicon carbide semiconductor device 有权
公开(公告)号：JP2004079577A
公开(公告)日：2004-03-11
申请号：JP2002233722
申请日：2002-08-09
申请人： Denso Corp , 株式会社デンソー
发明人： KATAOKA MITSUHIRO , NAITO MASAMI , TAKEUCHI YUICHI , RAJESH KUMAR , MATSUNAMI HIROYUKI , KIMOTO TSUNENOBU
IPC分类号： H01L29/80 , H01L21/04 , H01L21/337 , H01L29/04 , H01L29/24 , H01L29/808
CPC分类号： H01L29/66068 , H01L29/045 , H01L29/1608 , H01L29/8083
摘要： PROBLEM TO BE SOLVED: To suppress facet formation in a process of epitaxial growth on the walls in a trench formed in a substrate.
SOLUTION: In a SiC substrate 10, an off-angle is provided in the (0001) plane, and the off-direction is set at . A trench 11 is formed in the SiC substrate 10, and extends in the direction. A SiC layer is epitaxially grown on the walls in the trench 11.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2005328014A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2005328014A
公开(公告)日：2005-11-24
申请号：JP2004193460
申请日：2004-06-30
申请人： Denso Corp , 株式会社デンソー
发明人： TAKEUCHI YUICHI , MALHAN RAJESH KUMAR , MATSUNAMI HIROYUKI , KIMOTO TSUNENOBU
IPC分类号： H01L21/302 , H01L21/205 , H01L21/336 , H01L21/337 , H01L29/12 , H01L29/78 , H01L29/80 , H01L29/808
CPC分类号： H01L29/7828
摘要： PROBLEM TO BE SOLVED: To improve crystal defects or the profile of the inner wall of a trench, when a trench type semiconductor element is formed using silicon carbide. SOLUTION: After a trench 6 having aspect ratio of 2 or larger and trench inclination angle of 80° or larger is formed by dry etching in a substrate 20 of silicon carbide (0001)Si plane, damage area on the inner surface of the trench at dry etching is removed, by etching in reduced pressure hydrogen atmosphere at 1,600°C or higher. Damaged region can be removed in a short time, because of the characteristics of high temperature hydrogen. Since surface irregularities and a deterioration layer are not left in the trench after damages have been removed, the level derived from the deterioration layer can be made so as not to exist, and surface irregularities can be reduced to a very low level. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：当使用碳化硅形成沟槽型半导体元件时，为了改善沟槽内壁的晶体缺陷或轮廓。解决方案：通过在碳化硅（0001）Si平面的基板20中的干蚀刻形成纵横比为2以上且沟槽倾斜角为80°以上的沟槽6，在内表面上的损伤面积通过在1600℃以上的减压氢气氛中蚀刻，去除干蚀刻的沟槽。由于高温氢的特性，损坏的区域可以在短时间内被去除。由于在去除了损伤之后，沟槽中没有留下表面凹凸和劣化层，所以可以使劣化层所产生的水平不会存在，并且可以将表面凹凸减小到非常低的水平。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JP2003115460A METHOD FOR FABRICATING SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003115460A
公开(公告)日：2003-04-18
申请号：JP2001308905
申请日：2001-10-04
申请人： DENSO CORP
发明人： KATO NOBUYUKI , TAKEUCHI YUICHI , MATSUNAMI HIROYUKI , KIMOTO TSUNENOBU
IPC分类号： C30B29/36 , C23C16/42 , H01L21/205 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To prevent surface roughening of an epitaxial film in a method for fabricating a silicon carbide semiconductor device in which selective epitaxial growth is conducted on a silicon carbide substrate of (11-20) face. SOLUTION: A silicon carbide substrate of (11-20) face is prepared and a mask material having a mask pattern of specified shape is formed on the silicon carbide substrate. The side forming a mask pattern is set to make a specified angle or more (preferably, 3 deg. or above) against the (0001) face of the silicon carbide substrate. An epitaxial film is formed on the silicon carbide substrate by selective epitaxial growth using that mask material. Since 3C-SiC can be prevented from being formed in the epitaxial film deposition process, surface roughening of the epitaxial film can be prevented.

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