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1. 发明专利

JP2010165708A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2010165708A
公开(公告)日：2010-07-29
申请号：JP2009004279
申请日：2009-01-13
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： TAKESHITA TATSUYA , TADOKORO TAKASHI , OHASHI HIROMI , HIRONO TAKUO
IPC分类号： H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser that can further improve a wide modulation bandwidth without applying no compression strain to a quantum well layer of an active layer.
SOLUTION: The ridge waveguide type DFB laser 10 includes: a substrate 11; a first SCH layer 14a formed on the substrate 11; an active layer 15 formed on the first SCH layer 14a and having a quantum well layer 15a and a barrier layer 15b; a second SCH layer 14b formed on the active layer 15; a guide layer 16 formed on the second SCH layer 14b; a clad layer 17 formed on the guide layer 16; and a cap layer 18 formed on the clad layer 17. The thickness of the quantum well layer 15a is 10-25 nm, and the guide layer 16 has a diffraction grid 16a corresponding to 1.31 μm in the wavelength of the wavelength bandwidth of the second quantum level of the quantum well layer 15a.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可以进一步改善宽调制带宽而不对活性层的量子阱层不施加压缩应变的半导体激光器。解决方案：脊波导型DFB激光器10包括：基板11; 形成在基板11上的第一SCH层14a; 形成在第一SCH层14a上并具有量子阱层15a和势垒层15b的有源层15; 形成在有源层15上的第二SCH层14b; 形成在第二SCH层14b上的引导层16; 形成在引导层16上的覆盖层17; 以及形成在包层17上的覆盖层18.量子阱层15a的厚度为10〜25nm，引导层16的波长带宽的波长对应于1.31μm的衍射栅极16a 量子阱层15a的量子电平。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2012174917A Optical transmitter module 有权
标题翻译：光传输模块
公开(公告)号：JP2012174917A
公开(公告)日：2012-09-10
申请号：JP2011036137
申请日：2011-02-22
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , KANO FUMIYOSHI , YAMAMOTO TOMOO , TADOKORO TAKASHI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide an optical transmitter module having such structure as can prevent the heat generated by a DC current supplied to an optical semiconductor element inside a TO-CAN package from affecting a high frequency electric signal which is conductive to the optical semiconductor element.SOLUTION: The optical transmitter module includes a TO-CAN package 13 and an FPC substrate 12. A coaxial pin 22 that is arranged in the TO-CAN package 13 is connected to an RF signal line 26 arranged on the surface of the FPC substrate 12. A high frequency electric signal is made to be conductive to an optical semiconductor element arranged inside the TO-CAN package 13 from the RF signal line 26 by way of a coaxial pin 22. A plurality of DC pins 23 arranged at the TO-CAN package 13 are bent, to be connected to a DC signal line arranged on the rear surface of the FPC substrate 12. DC current is made to be conductive to the optical semiconductor element from the DC signal line by way of the DC pin 23 which is away from the coaxial pin 22 by 3 mm or more and 7.4 mm or less, among the plurality of DC pins 23.
摘要翻译：要解决的问题：提供一种具有如下结构的光发射机模块，其可以防止由提供给TO-CAN封装内的光半导体元件的DC电流产生的热量影响导通至光半导体元件。解决方案：光发射机模块包括TO-CAN封装13和FPC基板12.布置在TO-CAN封装13中的同轴引脚22连接到布置在其上的RF信号线26 FPC基板12.高频电信号通过同轴引脚22从RF信号线26导入TO-CAN封装13内部的光半导体元件。多个DC引脚23布置在 TO-CAN封装13弯曲，连接到布置在FPC基板12的背面上的直流信号线。直流电流通过DC引脚从直流信号线导通到光半导体元件 23在多个DC引脚23之间远离同轴引脚22移动3mm以上且7.4mm以下。（C）2012年，JPO＆INPIT

3. 发明专利

JP2011119311A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2011119311A
公开(公告)日：2011-06-16
申请号：JP2009273058
申请日：2009-12-01
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： TADOKORO TAKASHI , KOBAYASHI WATARU
IPC分类号： H01S5/042
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device performing high-speed modulation without degrading the manufacturing yield.
SOLUTION: The semiconductor laser device includes a semiconductor laser element body 10 having an active layer 2 provided on a semiconductor substrate 1, a clad layer 5 provided on the active layer 2, and a cap layer 6 provided on the clad layer 5, wherein the semiconductor laser element body 10 includes a growth layer-side electrode 7 provided on the cap layer 6 and a substrate-side electrode 8 provided on a lower surface of the semiconductor substrate 1. The growth layer-side electrode 7 is formed shorter than the active layer 2 in a propagation direction of laser beam oscillated by injecting a current into the active layer 2, and the growth layer-side electrode 7 and substrate-side electrode 8 are configured to inject the current into only a part of the active layer 2.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供在不降低制造成品率的情况下进行高速调制的半导体激光装置。解决方案：半导体激光器件包括具有设置在半导体衬底1上的有源层2，设置在有源层2上的覆盖层5和设置在覆盖层5上的覆盖层6的半导体激光元件体10 其中半导体激光元件主体10包括设置在盖层6上的生长层侧电极7和设置在半导体衬底1的下表面上的衬底侧电极8.生长层侧电极7形成为较短比通过向有源层2注入电流而振荡的激光束的传播方向上的有源层2，并且生长层侧电极7和基板侧电极8被配置为仅将电流注入到活性层的一部分版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011155157A Optical semiconductor device and method of controlling the same 审中-公开
标题翻译：光学半导体器件及其控制方法
公开(公告)号：JP2011155157A
公开(公告)日：2011-08-11
申请号：JP2010016110
申请日：2010-01-28
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： FUJISAWA TAKESHI , YAMANAKA TAKAYUKI , KANO FUMIYOSHI , KOBAYASHI WATARU , TADOKORO TAKASHI , FUJIWARA NAOKI
IPC分类号： H01S5/026 , G02F1/017
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor that increases an extinction ratio without varying the number of well layers and a length of a modulator. SOLUTION: An optical semiconductor includes: a substrate 11 composed of a semiconductor mixed crystal; an active part 12 formed on the substrate 11 and has a multiquantum well structure including a quantum well layer and a barrier layer; and an electro-absorptive modulator composed of both upper and lower clads 13, 14, respectively, covering a top and a bottom of the active part 12. Part of the upper clad 13 is etched and a ridge waveguide structure having a ridge mesa part 15 having a width of about light wavelength is manufactured, and an embedding part 16 with the both sides of the ridge mesa part 15 embedded by an organic material having small thermal conductivity is provided. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不改变阱层的数量和调制器的长度的情况下增加消光比的光学半导体。解决方案：光半导体包括：由半导体混晶构成的衬底11; 形成在基板11上并具有包括量子阱层和势垒层的多量子阱结构的有源部分12; 以及分别由覆盖有源部分12的顶部和底部的上部和下部包层13,14组成的电吸收调制器。蚀刻上部包层13的一部分，并且具有脊台面部分15的脊形波导结构制造出具有约光波长的宽度，并且提供了具有由导热性差的有机材料嵌入的脊台面部分15的两侧的嵌入部分16。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011151169A Can type package and optical transmission module 审中-公开
标题翻译： CAN型封装和光传输模块
公开(公告)号：JP2011151169A
公开(公告)日：2011-08-04
申请号：JP2010010667
申请日：2010-01-21
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , TADOKORO TAKASHI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a CAN type package that permits high-speed modulation which is faster than a modulation rate of 10 Gb/s, and to provide an optical transmission module.
SOLUTION: A CAN type package includes a center conductor pin 11, a dielectric material which covers the circumference of the center conductor pin 11 and in which degradation in propagation loss characteristics in a high-frequency domain of 40 GHz is ≤-3 dB, a coaxial type connection pin 10 comprising a grounding metal and having a cylindrical conductor covering the surface of the dielectric material, and a microstrip line 20 which has a signal line on the substrate and in which the signal line is 50 Ω in the modulation rate of 40 Gb/s. In the CAN type package and the optical transmission module, the coaxial type connection pin 10 is embedded in the stem of the CAN type package, and the center conductor pin 11 and a semiconductor device 35 mounted in the CAN type package are connected through the signal line.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供允许比10Gb / s的调制速度更快的高速调制的CAN型封装，并提供光传输模块。解决方案：CAN型封装包括中心导体引脚11，覆盖中心导体引脚11的圆周的介电材料，其中在40GHz的高频域中的传播损耗特性的降低≤3 dB，包括接地金属并且具有覆盖电介质材料的表面的圆柱形导体的同轴型连接引脚10以及在衬底上具有信号线的微带线20，其中信号线在调制中为50Ω 速率为40 Gb / s。在CAN型封装和光传输模块中，同轴型连接引脚10嵌入在CAN型封装的杆中，并且安装在CAN型封装中的中心导体引脚11和半导体器件35通过信号线。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011119312A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2011119312A
公开(公告)日：2011-06-16
申请号：JP2009273059
申请日：2009-12-01
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： TADOKORO TAKASHI , KOBAYASHI WATARU
IPC分类号： H01S5/026 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device performing high-speed modulation without degrading the manufacturing yield.
SOLUTION: The semiconductor laser device includes a semiconductor laser element body 10 having an active layer 2 provided on a semiconductor substrate 1, a clad layer 5 provided on the active layer 2, and a cap layer 6 provided on the clad layer 5, wherein the semiconductor laser element body 10 includes a growth layer-side electrode 7 provided on the cap layer 6 and a substrate-side electrode 8 provided on a lower surface of the semiconductor substrate 1. The active layer 2 is formed shorter than an element length L11 of the semiconductor laser element body 10, the growth layer-side electrode 7 is formed shorter than the element length L11 of the semiconductor laser element body 10, and the growth layer-side electrode 7 and substrate-side electrode 8 are configured to inject a current into the active layer 2.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供在不降低制造成品率的情况下进行高速调制的半导体激光装置。解决方案：半导体激光器件包括具有设置在半导体衬底1上的有源层2，设置在有源层2上的覆盖层5和设置在覆盖层5上的覆盖层6的半导体激光元件体10 其中半导体激光元件主体10包括设置在盖层6上的生长层侧电极7和设置在半导体衬底1的下表面上的衬底侧电极8.有源层2形成为比元件半导体激光元件主体10的长度L11，生长层侧电极7形成为比半导体激光元件主体10的元件长度L11短，并且生长层侧电极7和基板侧电极8被配置为在活动层2注入电流。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2013257425A Semiconductor optical filter 有权
标题翻译：半导体光学滤波器
公开(公告)号：JP2013257425A
公开(公告)日：2013-12-26
申请号：JP2012133097
申请日：2012-06-12
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Tohoku Univ , 国立大学法人東北大学
发明人： TADOKORO TAKASHI , YASAKA HIROSHI
IPC分类号： G02B6/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical filter which can inclinedly change a refraction index in a direction perpendicular to a traveling direction of a light wave in a region of an input slab waveguide, and has the function of varying a wavelength capable of being output from each port of an output waveguide.SOLUTION: A semiconductor optical filter includes a substrate containing a semiconductor as material, an input optical waveguide, an input slab waveguide, an array waveguide, an output slab waveguide, and an output optical waveguide. The input slab waveguide is made so that the central axis of the input slab waveguide in a traveling direction of the light wave coincides with [001] axis of semiconductor crystal, and includes a voltage application electrode for applying an electric field to the input slab waveguide in a crystal growth axis [100] direction.
摘要翻译：要解决的问题：提供一种半导体滤光器，其可以在与输入平板波导的区域中的光波的行进方向垂直的方向上倾斜地改变折射率，并且具有改变波长的功能输出波导的每个端口的输出。解决方案：半导体滤光器包括含有作为材料的半导体的基板，输入光波导，输入平板波导，阵列波导，输出平板波导和输出光波导。输入平板波导被制成使得输入平板波导在光波的行进方向上的中心轴与半导体晶体的[001]轴一致，并且包括用于向输入平板波导施加电场的施加电压在晶体生长轴[100]方向。

8. 发明专利

JP2013093622A Optical semiconductor device control method 有权
标题翻译：光学半导体器件控制方法
公开(公告)号：JP2013093622A
公开(公告)日：2013-05-16
申请号：JP2013028592
申请日：2013-02-18
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： FUJISAWA TAKESHI , YAMANAKA TAKAYUKI , KANO FUMIYOSHI , KOBAYASHI WATARU , TADOKORO TAKASHI , FUJIWARA NAOKI
IPC分类号： H01S5/026 , G02F1/017 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device control method which can increase an extinction ratio while maintaining the number of well layers and modulator length unchanged.SOLUTION: There is provided a control method for an optical semiconductor device comprising: a substrate consisting of a semiconductor mixed crystal; an electroabsorption type optical modulator, formed on the substrate, which has an active section of multiquantum well structure including a quantum well layer and a barrier layer and upper/lower clad sections respectively covering the top and the bottom of the active section, and which is composed by fabricating a ridge waveguide structure having a ridge mesa section of about optical wavelength in width by etching part of the upper clad section and then filling up both sides of the ridge mesa section with an organic material having a small heat transfer coefficient; a semiconductor laser which outputs light by an injected current; and an optical waveguide device, provided between the semiconductor laser and the electroabsorption type optical modulator, in which the light output from the semiconductor laser is guided. The extinction ratio of the electroabsorption type optical modulator is controlled by changing the current injected into the semiconductor laser.
摘要翻译：要解决的问题：提供一种可以在保持阱层数和调制器长度不变的同时增加消光比的光半导体器件控制方法。解决方案：提供了一种用于光学半导体器件的控制方法，包括：由半导体混晶构成的衬底; 形成在基板上的电吸收型光调制器，其具有包括量子阱层和势垒层的多量子阱结构的有源部分和分别覆盖有源部分的顶部和底部的上/下包层部分，通过蚀刻上包层部分的一部分制造具有约宽光波长的脊台面部分的脊波导结构，然后用具有小的传热系数的有机材料填充脊台部分的两侧; 通过注入电流输出光的半导体激光器; 以及设置在半导体激光器和电吸收型光调制器之间的光波导器件，其中从半导体激光器输出的光被引导。通过改变注入半导体激光器的电流来控制电吸收型光调制器的消光比。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012178498A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2012178498A
公开(公告)日：2012-09-13
申请号：JP2011041324
申请日：2011-02-28
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： TADOKORO TAKASHI , KOBAYASHI WATARU
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device using a modulator integrated semiconductor laser, capable of high-speed modulation at lower power consumption and lower cost than conventional devices.SOLUTION: A temperature dependent terminal resistance 4 with resistance value varying with temperature is connected in parallel to a modulator section 3b to input a modulation signal into the modulator section 3b through the temperature dependent terminal resistance 4.

10. 发明专利

JP2013197502A Modulator integrated semiconductor laser system 审中-公开
标题翻译：调制器集成半导体激光系统
公开(公告)号：JP2013197502A
公开(公告)日：2013-09-30
申请号：JP2012065811
申请日：2012-03-22
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： TADOKORO TAKASHI
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a modulator integrated semiconductor laser system capable of achieving low power consumption and high-speed modulation.SOLUTION: The modulator integrated semiconductor laser system includes: a semiconductor laser device with a first diffraction grating; a modulator that changes a refraction index by voltage application; a second diffraction grating formed between the semiconductor laser and the modulator; and a third diffraction grating formed on the light emission side of the modulator.
摘要翻译：要解决的问题：提供能够实现低功耗和高速调制的调制器集成半导体激光系统。解调器：调制器集成半导体激光系统包括：具有第一衍射光栅的半导体激光器件; 通过施加电压来改变折射率的调制器; 形成在半导体激光器和调制器之间的第二衍射光栅; 以及形成在调制器的发光侧的第三衍射光栅。

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