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1. 发明专利

JPH0624241B2 失效
公开(公告)号：JPH0624241B2
公开(公告)日：1994-03-30
申请号：JP27729584
申请日：1984-12-26
申请人： NIPPON ELECTRIC CO
发明人： MATSUMOTO YOSHINARI , JITSUKAWA ASAKO
IPC分类号： H01L29/812 , H01L21/338 , H01L29/47 , H01L29/80 , H01L29/861 , H01L29/872 , H01L29/48

2. 发明专利

JPH0511410B2 失效
公开(公告)号：JPH0511410B2
公开(公告)日：1993-02-15
申请号：JP18854285
申请日：1985-08-29
申请人： NIPPON ELECTRIC CO
发明人： MATSUMOTO YOSHINARI
IPC分类号： H01L21/22 , H01L21/324

3. 发明专利

JPH027920B2 失效
公开(公告)号：JPH027920B2
公开(公告)日：1990-02-21
申请号：JP10020180
申请日：1980-07-22
申请人： NIPPON ELECTRIC CO
发明人： MATSUMOTO YOSHINARI , TAGUCHI KENSHIN
IPC分类号： C30B19/10 , C30B29/40 , H01L21/208

4. 发明专利

JPS6327877B2 失效
公开(公告)号：JPS6327877B2
公开(公告)日：1988-06-06
申请号：JP7602978
申请日：1978-06-22
申请人： NIPPON ELECTRIC CO
发明人： MATSUMOTO YOSHINARI
IPC分类号： H01S5/00

5. 发明专利

JPS6257118B2 失效
公开(公告)号：JPS6257118B2
公开(公告)日：1987-11-30
申请号：JP11136479
申请日：1979-08-31
申请人： NIPPON ELECTRIC CO
发明人： MATSUMOTO YOSHINARI , IDE JUICHI
IPC分类号： H01L21/208 , H01L33/10 , H01L33/14 , H01L33/30 , H01S5/00 , H01S5/16

6. 发明专利

JPS6031262B2 失效
公开(公告)号：JPS6031262B2
公开(公告)日：1985-07-20
申请号：JP13022076
申请日：1976-10-28
申请人： NIPPON ELECTRIC CO
发明人： MATSUMOTO YOSHINARI
IPC分类号： G01N1/32 , G01N17/00 , G01N33/20

7. 发明专利

JPS597237B2 JPS597237B2 - 失效
公开(公告)号：JPS597237B2
公开(公告)日：1984-02-17
申请号：JP9511476
申请日：1976-08-10
申请人： Nippon Electric Co
发明人： YONEZU HIROO , NANNICHI YASUO , SAKUMA ISAMU , MATSUMOTO YOSHINARI
IPC分类号： H01S5/00 , H01S5/042

8. 发明专利

JPS58122721A IMPURITY DIFFUSION TO COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS58122721A
公开(公告)日：1983-07-21
申请号：JP456682
申请日：1982-01-14
申请人： NIPPON ELECTRIC CO
发明人： TAGUCHI KENKOU , MATSUMOTO YOSHINARI
IPC分类号： H01L31/107 , H01L21/22 , H01L21/223
摘要： PURPOSE:To form an impurity diffusion region having gentle impurity concentration slope by applying heat treatment under saturated vapor of phosphorus after selectively and thermally diffusing a P type impurity into an N type compound semiconductor having a phosphoric element. CONSTITUTION:An N InP layer 32, an N type InGaAs layer 33, an InGaAsP layer 34, and an N type InInP layer 35 are successively formed on an N InP substrate 31. Next, an SiO2 or SiN film is formed on the layer 35. The film 35 is selectively eliminated in ring shape. A wafer made in this way is arranged in a closed tube by using Zn3P2 as a diffusion source for heat treatment to obtain a Zn selective diffusion P type layer 36. After eliminating the film 35, the wafer is arranged in the closed tube together with red phosphorus for heat treatment. Then, a P region is formed. Next, an SiO2 or SiN film 38 is formed with the shape which is larger than the ring-shaped inside circumference of the regin 36 and smaller than the outside circumference of the regin 36 on the layer 35. A P InP region 39 is formed arranging ZnP2 as a diffusion source in the closed tube and by applying heat treatment. This can prevent edge breakdown.

9. 发明专利

JPS5821330A POSITIONING METHOD FOR SEMICONDUCTOR WAFER SURFACE AND EXPOSING UNIT 失效
公开(公告)号：JPS5821330A
公开(公告)日：1983-02-08
申请号：JP11962981
申请日：1981-07-30
申请人： NIPPON ELECTRIC CO
发明人： MATSUMOTO YOSHINARI , MORIHISA YUUZOU
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027 , H01L23/544
摘要： PURPOSE:To realize a precise positioning by a method wherein photoluminescent signals obtained by laser scanning of a wafer surface are observed for their intra-wafer distribution, when the mask surface for exposure and a buried hetero-structured semiconductor wafer surface are positioned together. CONSTITUTION:This relates to a method of positioning the surface of a buried hetero-structured wafer 30 consisting of an undoped InGaAsP active layer 13 with a forbidden band gap of -0.96eV, an InGaAsP electrode forming layer 17 with a forbidden band gap of -1.05eV, or the like, and the surface of a glass mask 32 for exposure. That is, an impurity diffusion preventing SiO2 film 19 and a photoresist film 31 are provided on the surface of the wafer 30, and a glass mask 32 consisting of a non-light transmitting section 321 and a light transmitting section 322 is arranged facing the rear side of the wafer 30. Parallel laser beams 341 and 342 with an internal between them are applied to the mask 32 and a change in the luminescent signal level which the laser beams generate upon arriving at the active layer 13 is detected by a light detecting unit with the intermediary of optical fibers 33 whereby the relative positions of the wafer 30 and the mask 32 are determined.

10. 发明专利

JPS56168535A METHOD FOR MEASURING SURFACE BEARING 失效
公开(公告)号：JPS56168535A
公开(公告)日：1981-12-24
申请号：JP7233880
申请日：1980-05-30
申请人： NIPPON ELECTRIC CO
发明人： MATSUI JIYUNJI , MATSUMOTO YOSHINARI
IPC分类号： G01N23/20 , G01N23/207
摘要： PURPOSE:To enable the slanted angle from a specified lattice face of a single crystal plane to be measured with a high precision of about 1/1,000 deg., by measuring the distance between two peaks in a locking curve. CONSTITUTION:An X-ray beam 2 irradiated from a ray source 1 passes slits 3 and 4, is applied on a monochrometer 5, and becomes approximately parallel X-ray beams. Said X-ray beams are irradiated on a specimen 7, and rotated around the axis O of the specimen 7. The intensity of a reflected X-rays 8 are measured by a counter 9, and the X-ray locking curve is obtained. In the case incident X-ray OR (and OT) are inputted to the surface of a specimen 30 at a shallow angel, a large peak appears at a position thetaR which is separated by a normal black angle thetaB-DELTAH by a reflected X-ray HR. In the case part of OT is irradiated to the side of the specimen, it is diffracted in the specimen 30 and outptted as an X-ray HT, and the small peak is obtained at position thetaT. The value of the distance DELTAH can be directly measured approximately by a formula DELTAH=thetaR-thetaBapprox.=thetaR-thetaT.

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