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1. 发明专利

JP2007027639A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007027639A
公开(公告)日：2007-02-01
申请号：JP2005211478
申请日：2005-07-21
申请人： Nec Electronics Corp , Necエレクトロニクス株式会社
发明人： HASEGAWA MIEKO , NAKASHIBA YASUTAKA
IPC分类号： H01L21/3205 , H01L23/52
CPC分类号： H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent water from passing through an interface between an interlayer insulating film of a lower layer and interlayer insulating film of an upper layer composed of different materials from path other, which is apt to become a water passing inlet from outside in a conventional semiconductor device.
SOLUTION: The semiconductor device 1 includes a semiconductor substrate 10, a group of interlayer insulating films 20 (a first group of interlayer insulating films), a group of interlayer insulating films 30 (a second group of interlayer insulating films), and a seal ring 40 (guard ring). The group of interlayer insulating films 20 is located on the semiconductor device 10. The group of interlayer insulating films 30 is located on the group of interlayer insulating films 20. The group of interlayer insulating films 30 is formed of an insulating material of a dielectric constant lower than that of the group of interlayer insulating films 20. The seal ring 40 is located so as to enclose circuit forming areas D11, D12. The seal ring 40 passes through the interface between the group of insulating films 20 and the group of interlayer insulating films 30, and is located apart from the semiconductor substrate 10.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了防止水通过下层的层间绝缘膜和由不同材料构成的上层的层间绝缘膜之间的界面与其它容易变成水通过口的路径的界面从传统的半导体器件的外部。解决方案：半导体器件1包括半导体衬底10，一组层间绝缘膜20（第一组层间绝缘膜），一组层间绝缘膜30（第二组层间绝缘膜）和密封环40（保护环）。层间绝缘膜20组位于半导体器件10上。层间绝缘膜30的一组位于层间绝缘膜20的一组上。层间绝缘膜30的组由介电常数绝缘材料低于层间绝缘膜20的厚度。密封环40被定位成包围电路形成区域D11，D12。密封环40穿过绝缘膜组20和一组层间绝缘膜30之间的界面，并与半导体衬底10分开。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2008166751A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008166751A
公开(公告)日：2008-07-17
申请号：JP2007316076
申请日：2007-12-06
申请人： Nec Electronics Corp , Necエレクトロニクス株式会社
发明人： TAKEWAKI TOSHIYUKI , IGUCHI MANABU , OSHIDA DAISUKE , TOYOSHIMA HIRONORI , HIROI MASAYUKI , ONUMA TAKUJI , NANBA HIROAKI , HONMA ICHIRO , HASEGAWA MIEKO , TSUCHIYA YASUAKI , TAIJI TOSHIJI , KUNUGI TAKAHARU
IPC分类号： H01L21/304 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/02074 , H01L21/76883
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device in connection to a method for manufacturing the same. SOLUTION: A cleaning step after the chemical mechanical polishing (CMP) of a Cu film 103 is carried out following the procedure below. The main surface of a silicon substrate 121 provided with the Cu film 103 is brought into contact with an alkali aqueous solution, polycarboxylic acid, BTA, and an alkali aqueous solution in this order. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：为了提高与其制造方法相关的半导体器件的可靠性。解决方案：按照以下步骤进行Cu膜103的化学机械抛光（CMP）之后的清洁步骤。设置有Cu膜103的硅基板121的主表面依次与碱性水溶液，多元羧酸，BTA和碱性水溶液接触。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2004214267A Semiconductor device and its manufacturing method 有权
公开(公告)号：JP2004214267A
公开(公告)日：2004-07-29
申请号：JP2002379278
申请日：2002-12-27
申请人： Nec Electronics Corp , Necエレクトロニクス株式会社
发明人： KUNIMUNE YORINOBU , HASEGAWA MIEKO , ITO TAKAMASA , TAKEDA TAKESHI , AOKI HIDEMITSU
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/532
CPC分类号： H01L21/76849 , H01L21/76801 , H01L21/76808 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76886 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a metal interconnect line which is markedly improved in electromigration resistance or stress migration resistance. SOLUTION: A copper interconnect line 107 is composed of a silicon low-concentration region 104 and a silicon solid solution 106 provided on the silicon low-concentration region 104. The silicon solid solution layer 106 has a structure in which silicon is arranged as an interstitial element or a substitutional element in a copper crystal structure forming the copper interconnect line 107. Silicon-containing copper forming the silicon solid solution 106 is kept in a state in which silicon is introduced as an interstitial element or a substitutional element while the silicon-containing copper maintains a copper crystal structure (face-centered cubic lattice;lattice constant 3.6Å). COPYRIGHT: (C)2004,JPO&NCIPI

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