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1. 发明专利

JP2013122088A Treatment method for metal supporting, production method, substrate for metal supporting, and treatment apparatus for metal supporting 有权
标题翻译：用于金属支撑的处理方法，生产方法，用于金属支撑的基板和用于金属支撑的处理装置
公开(公告)号：JP2013122088A
公开(公告)日：2013-06-20
申请号：JP2012245125
申请日：2012-11-07
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , Ogic Technologies Co Ltd , 株式会社オジックテクノロジーズ
发明人： HORI MASARU , SEKINE MAKOTO , KANO HIROYUKI , KOTANI EIJI , YASUDA KEIICHIRO
IPC分类号： C23C18/18 , B01J23/44 , B01J37/02 , C23C18/32 , C23C18/38 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a treatment method for metal supporting or the like, which allows a treatment for metal supporting even if a substrate includes an inorganic material.SOLUTION: An atmospheric pressure plasma treatment is applied to a substrate and then, the treatment for metal supporting is carried out. Concretely, the substrate is irradiated with a plasma formed, for example, by a mixed gas of argon and hydrogen. Si-C bond is split off by the collision of electrons in the plasma, and Si-dangling bonds are formed (step STFF1). Then, the formed dangling bonds bind to hydrogen radicals in the plasma, and Si is hydrogen-terminated as Si-H (step STFF2). When the hydrogen-terminated substrate is immersed in, for example, an aqueous solution of Cu, a substitution reaction of H and Cu proceeds and Cu silicide is formed (step STFF3). Electroless Cu plating is attained using them as a catalyst nucleus.
摘要翻译：要解决的问题：为了提供金属支撑等的处理方法，即使基板包括无机材料也能够进行金属支撑的处理。解决方案：对基板施加大气压等离子体处理，然后进行金属支撑处理。具体地，用例如氩和氢的混合气体形成的等离子体照射基板。 Si-C键被等离子体中的电子碰撞分离，形成Si-悬挂键（步骤STFF1）。然后，形成的悬挂键与等离子体中的氢自由基结合，并且Si作为Si-H氢终止（步骤STFF2）。当将氢封端基板浸入例如Cu的水溶液中时，H和Cu的取代反应进行而形成Cu硅化物（步骤STFF3）。使用它们作为催化剂核获得化学镀铜。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2014045049A Manufacturing method and etching method of semiconductor device 有权
标题翻译：半导体器件的制造方法和蚀刻方法
公开(公告)号：JP2014045049A
公开(公告)日：2014-03-13
申请号：JP2012185977
申请日：2012-08-26
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Toyota Central R&D Labs Inc , 株式会社豊田中央研究所 , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社
发明人： HORI MASARU , SEKINE MAKOTO , ISHIKAWA KENJI , OZAWA TAKAHIRO , KANO HIROYUKI
IPC分类号： H01L21/3065 , H01L21/336 , H01L21/338 , H01L29/12 , H01L29/778 , H01L29/78 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method and an etching method of a semiconductor device, which can inhibit surface composition change and the occurrence of crystal fault in a group III nitride compound semiconductor.SOLUTION: A manufacturing method of a semiconductor device comprises: forming a buffer layer 120, a GaN layer 130 and an AlGaN layer 140 on a principal surface of a substrate 110; subsequently forming a source electrode S1 and a drain electrode D1; subsequently covering a part of the AlGaN layer 140, the source electrode S1 and the drain electrode D1 with a mask layer M1; and removing a part of a thickness of the AlGaN layer 140 by performing dry etching by using Clon the AlGaN layer 140 in a state of keeping a temperature of the substrate 110 within a range of not less than 200°C and not more than 600°C to form a recess.
摘要翻译：要解决的问题：提供可以抑制III族氮化物化合物半导体中的表面组成变化和晶体缺陷的发生的半导体器件的制造方法和蚀刻方法。解决方案：半导体器件的制造方法包括：在衬底110的主表面上形成缓冲层120，GaN层130和AlGaN层140; 随后形成源电极S1和漏电极D1; 随后用掩模层M1覆盖一部分AlGaN层140，源电极S1和漏电极D1; 并且通过在保持基板110的温度在不低于200℃且不大于600°的范围内的状态下使用AlGaN层140进行干蚀刻来去除AlGaN层140的一部分厚度 C形成凹部。

3. 发明专利

JP2013153995A Ovarian cancer treatment device 审中-公开
标题翻译： OVARIAN癌症治疗装置
公开(公告)号：JP2013153995A
公开(公告)日：2013-08-15
申请号：JP2012017483
申请日：2012-01-31
申请人： Nagoya Univ , 国立大学法人名古屋大学 , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社
发明人： HORI MASARU , KONDO HIROMOTO , TAKEDA KEIGO , TANAKA HIROMASA , YOSHIKAWA FUMITAKA , KAJIYAMA HIROAKI , NAKAMURA KAE , KANO HIROYUKI
IPC分类号： A61N1/44 , A61B17/42 , A61B18/00 , H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide an ovarian cancer treatment device capable of terminating ovarian cancer cells while hardly affecting normal cells by using atmospheric pressure plasma.SOLUTION: An ovarian cancer treatment device 110 includes a pair of counter electrodes 2a and 2b, on whose opposing face concave parts (hollows) H are formed. Introducing argon gas into a housing 11 through a gas inlet 11i and applying a voltage between the electrodes 2a and 2b allow the ovarian cancer treatment device 110 to blow out plasma from a gas outlet 11o. The plasma density is not less than 1×10cmand not more than 1×10cm. Ovarian cancers are continuously irradiated with the plasma for a certain period.
摘要翻译：要解决的问题：提供能够终止卵巢癌细胞但不会通过使用大气压血浆几乎不影响正常细胞的卵巢癌治疗装置。解决方案：卵巢癌治疗装置110包括一对对置电极2a和2b，其对置形成面凹部（中空部）H。通过气体入口11i将氩气引入壳体11并在电极2a和2b之间施加电压允许卵巢癌治疗装置110从气体出口11o吹出等离子体。等离子体密度不小于1×10cm，不大于1×10cm。卵巢癌血浆持续照射一定时间。

4. 发明专利

JP2012014927A Reactive species supply device and processing apparatus for surface or th like 有权
标题翻译：反应物种供应装置和表面处理装置
公开(公告)号：JP2012014927A
公开(公告)日：2012-01-19
申请号：JP2010149525
申请日：2010-06-30
申请人： Fuji Mach Mfg Co Ltd , Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学 , 富士機械製造株式会社
发明人： HORI MASARU , KANO HIROYUKI , MORI KAZUAKI , NAKANE NOBUYUKI , WATANABE TOMOHIRO , ISOZUMI JOJI
IPC分类号： H05H1/24 , B01J19/08 , B08B5/00
CPC分类号： B23H1/00 , H05H1/48 , H05H2001/485 , H05H2001/488 , H05H2245/123
摘要： PROBLEM TO BE SOLVED: To make a discharge unlikely to be generated between an electrode and a work.SOLUTION: An individual passage 81B as a component of a plasma outflow passage provided between a discharge space 42B and a plasma output port 16 has a main passage composed of an X part 81BX, a part 81BZO closer to the discharge space than a connection part M of an X part 81BXX of a Z part 81BZ, an X part 81BXX, a diffuser 82B, a slit 86, etc. and also has a branch passage composed of a part 81BZP on the opposite side from the discharge space with respect to the connection part M of a Z-directional part 81BZ. A ground plate 90 is provided blocking the branch passage 81BZP. The branch passage 81BZP and a part 81BZO of the main passage are positioned on the same straight line, so a discharge is generated with the ground plate 90 and made unlikely to be generated with the work W.
摘要翻译：要解决的问题：在电极和工件之间不可能产生放电。解决方案：设置在放电空间42B和等离子体输出口16之间的作为等离子体流出通道的分量的单独通道81B具有由X部分81BX，更靠近放电空间的部分81BZO组成的主通道， Z部81BZ的X部81BXX的连接部M，X部81BXX，扩散部82B，狭缝86等，并且还具有由与放电空间相反的一侧的部分81BZP构成的分支通路，到Z方向部81BZ的连接部M. 设置有接地板90，其阻挡分支通道81BZP。主通道的分支通道81BZP和部分81BZO位于相同的直线上，因此与接地板90产生放电，并且不太可能由工件W产生。版权所有（C）2012 ，JPO＆INPIT

5. 发明专利

JP2011171251A Multi-micro hollow cathode light source and atomic absorption spectrometer 有权
标题翻译：多微型中空灯光源和原子吸收光谱仪
公开(公告)号：JP2011171251A
公开(公告)日：2011-09-01
申请号：JP2010036315
申请日：2010-02-22
申请人： Katagiri Engineering:Kk , Meijo Univ , Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学 , 学校法人名城大学 , 株式会社片桐エンジニアリング
发明人： HORI MASARU , ITO AKIFUMI , OTA TAKAYUKI , KANO HIROYUKI , YAMAKAWA KOJI
IPC分类号： H01J61/68 , G01N21/31
CPC分类号： H01J65/046 , G01N21/3103 , H05H1/2406 , H05H2001/2412
摘要： PROBLEM TO BE SOLVED: To provide a multi-micro hollow cathode light source wherein a light source is one point light source. SOLUTION: The multi-micro hollow cathode light source includes a cathode plate 11, an insulating plate 12, an anode plate 13, and a metal piece 14. The insulating plate 12 is arranged sandwiched between the cathode plate 11 and the anode plate 13. The cathode plate 11 is made of a copper. Holes 15a, 15b, and 15c are respectively arranged at the centers of the cathode plate 11, the insulating plate 12, and the anode plate 13, and form a hole 15 wherein a series of three holes pass through. Four linear grooves 16, extending at a cross-shape centered around the hole 15a and continuing to the hole around the hole 15a, are arranged on the cathode plate 11, as shown in Fig.3. The groove 16 passes through the cathode plate 11. Four metal pieces 14 where respective materials that differ are respectively inserted and embedded in the four grooves 16. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种多微孔中空阴极光源，其中光源是一点光源。解决方案：多微孔中空阴极光源包括阴极板11，绝缘板12，阳极板13和金属片14.绝缘板12被布置在阴极板11和阳极之间阴极板11由铜制成。孔15a，15b和15c分别设置在阴极板11，绝缘板12和阳极板13的中心，并形成一系列三个孔通过的孔15。如图3所示，在阴极板11上配置四个直线状的槽16，其以围绕孔15a为中心且与孔15a周围的孔连续的交叉形状延伸。凹槽16穿过阴极板11.四个金属片14分别插入并嵌入四个凹槽16中。各种不同材料的金属片14分别是：（C）2011，JPO＆INPIT

6. 发明专利

JP2011076931A Positive electrode material for lithium ion secondary battery, and method for manufacturing the same 有权
标题翻译：用于锂离子二次电池的正极电极材料及其制造方法
公开(公告)号：JP2011076931A
公开(公告)日：2011-04-14
申请号：JP2009228539
申请日：2009-09-30
申请人： Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , Toyota Motor Corp , トヨタ自動車株式会社 , 国立大学法人名古屋大学
发明人： HORI MASARU , HAMA YUICHIRO , KANO HIROYUKI
IPC分类号： H01M4/58 , H01M4/36
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide a positive electrode material for lithium ion secondary battery with excellent charge/discharge quantity per unit volume.
SOLUTION: Into the container 11 of an in-liquid CVD device 10, 500 ml of 2-propanol is put so that an in-liquid electrode 12 is dipped in the 2-propanol and the liquid level is located between the in-liquid electrode 12 and an external electrode 13. Particles 2 composed of lithium iron phosphoric acid are disposed on the in-liquid electrode 12 to be mixed into the 2-propanol. The container 11 is then sealed, and the internal gas of the container 11 is substituted by argon. A voltage is applied between the in-liquid electrode 12 and the external electrode 13 to start film forming treatment. Thus, an atmospheric pressure plasma is generated between the electrodes to decompose the 2-propanol, and a carbon nanostructure 3 having pores 4 is formed on the surface of the particles 2.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的每单位体积充放电量的锂离子二次电池用正极材料。解决方案：在液体CVD装置10的容器11中放入500ml 2-丙醇，使液体中的电极12浸入2-丙醇中，液面位于液体电极12和外部电极13.由锂铁磷酸构成的颗粒2设置在液体电极12上以混合到2-丙醇中。然后将容器11密封，容器11的内部气体被氩气置换。在液体电极12和外部电极13之间施加电压以开始成膜处理。因此，在电极之间产生大气压等离子体以分解2-丙醇，并且在颗粒2的表面上形成具有孔4的碳纳米结构3。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2012049028A Radical source 有权
标题翻译：辐射源
公开(公告)号：JP2012049028A
公开(公告)日：2012-03-08
申请号：JP2010190967
申请日：2010-08-27
申请人： Katagiri Engineering:Kk , Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学 , 株式会社片桐エンジニアリング
发明人： HORI MASARU , KANO HIROYUKI , DEN SHOJI , YAMAKAWA KOJI
IPC分类号： H05H1/46 , C23C16/50 , H01L21/203 , H01L21/205 , H01L21/304 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a radical source capable of generating high density radicals.SOLUTION: The radical source has a feed pipe 10 including SUS and a cylinder-like plasma generation pipe 11 including thermal decomposition boron nitride (PBN) connecting to the feed pipe 10. A cylindrical CCP electrode 13 is arranged on the outside of the plasma generation pipe 11, and a coil 12 wound along the outer periphery of the plasma generation pipe 11 is provided on the downstream side of the CCP electrode 13. A parasitic plasma prevention pipe 15 including ceramic is inserted into the opening of the feed pipe 10 at the connection part of the feed pipe 10 with the plasma generation pipe 11.
摘要翻译：要解决的问题：提供能够产生高密度自由基的自由基源。解决方案：自由基源具有包括SUS的进料管10和包括连接到进料管10的热分解氮化硼（PBN）的圆柱状等离子体产生管11.圆柱形CCP电极13布置在等离子体产生管11和沿等离子体发生管11的外周缠绕的线圈12设置在CCP电极13的下游侧。包括陶瓷的寄生等离子体防止管15插入进料管的开口在进料管10与等离子体发生管11的连接部分处。10，版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2012027041A Spectroscopic method and spectral instrument 有权
标题翻译：光谱仪和光谱仪
公开(公告)号：JP2012027041A
公开(公告)日：2012-02-09
申请号：JP2011244027
申请日：2011-11-07
申请人： Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学
发明人： ITO MASAFUMI , NISHIZAWA NORIHIKO , HORI MASARU , GOTO TOSHIO , KANO HIROYUKI
IPC分类号： G01N21/27 , G01N21/39
CPC分类号： G01N21/39 , G01J3/02 , G01J3/0218 , G01J3/0224 , G01J3/10 , G01J3/42 , G01J2001/4242 , G01N2201/0697 , G02B6/2861
摘要： PROBLEM TO BE SOLVED: To implement an instrument which measures an optical absorption coefficient of a sample with high sensitivity.SOLUTION: A ring-down spectral instrument uses a wavelength-variable femtosecond soliton pulse light source 1. Pulse light is input to a loop-shaped optical fiber 6 via a first optical transmission line 4 and an optical changeover switch 5. Ring-down pulse light is input to a homodyne detector 40 via the optical changeover switch 5. Meanwhile, pulse light propagated through the first optical transmission line 4 is branched and input to each of optical transmission lines constituting a second optical transmission line 20 via an optical directional coupler 8 and a first optical switch element 12. Pulse light propagated through the second optical transmission line 20 is input to the homodyne detector 40 as reference light and is synchronously detected. A plurality of optical transmission lines constituting the second optical transmission line 20 has optical path lengths successively differ from one another by a length of the optical fiber 6 and are allowed to vary the optical path lengths minutely.
摘要翻译：要解决的问题：实现以高灵敏度测量样品的光吸收系数的仪器。解决方案：降噪光谱仪使用波长可变飞秒激光脉冲光源1.脉冲光通过第一光传输线4和光转换开关5输入到环形光纤6中。环通过光转换开关5将向下脉冲光输入到零差检测器40.同时，通过第一光传输线4传播的脉冲光被分支并经由光学器件被分配并输入到构成第二光传输线20的每个光传输线定向耦合器8和第一光开关元件12.通过第二光传输线20传播的脉冲光作为参考光输入到零差检测器40，并被同步检测。构成第二光传输线20的多条光传输线的光路长度依次彼此不同，光纤6的长度不同，并允许光路长度微小变化。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2012013544A Atomic absorption spectrometer and atomic absorption analysis method 有权
标题翻译：原子吸收光谱仪和原子吸收分析方法
公开(公告)号：JP2012013544A
公开(公告)日：2012-01-19
申请号：JP2010150402
申请日：2010-06-30
申请人： Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学
发明人： HORI MASARU , KANO HIROYUKI
IPC分类号： G01N21/73
摘要： PROBLEM TO BE SOLVED: To realize synchronization between an atomizer and a light source by a simple configuration in an atomic absorption spectrometer.SOLUTION: An atomic absorption spectrometer is composed of an atomizer 1, a light source 2, an analyzer 3 and a power source device 4. As shown in FIG. 3, the power source device 4 is composed of an AC power source 5 and a half wave rectifier circuit 6. The AC power source 5 is a power source obtained by boosting a commercial AC power source of 60 Hz, the atomizer 1 and the AC power source 5 are directly connected and the light source 2 is connected to the AC power source 5 through a half wave rectifier circuit 6. An AC voltage of 60 Hz from the AC power source 5 is directly applied to the atomizer 1. The half wave rectifier circuit 6 is, for example, a circuit using a diode or the like and performs half-wave rectification to output an AC voltage of 60 Hz. And, the half-wave rectified voltage is applied to the light source 2.
摘要翻译：要解决的问题：通过原子吸收光谱仪中的简单配置来实现雾化器和光源之间的同步。解决方案：原子吸收光谱仪由雾化器1，光源2，分析器3和电源装置4组成。如图3所示，电源装置4由交流电源5和半波整流电路6构成。交流电源5是通过升压60Hz的商用AC电源，雾化器1和AC 电源5直接连接，光源2通过半波整流电路6与AC电源5连接。来自AC电源5的60Hz的交流电压直接施加到雾化器1。半波整流电路6例如是使用二极管等的电路，进行半波整流，输出60Hz的交流电压。并且，将半波整流电压施加到光源2.版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2011190156A Selective growth method of carbon nanowall, and electronic device using carbon nanowall 有权
标题翻译：碳纳米管的选择生长方法和使用碳纳米管的电子器件
公开(公告)号：JP2011190156A
公开(公告)日：2011-09-29
申请号：JP2010059472
申请日：2010-03-16
申请人： Nagoya Univ , Nu Eco Engineering Kk , Nuエコ・エンジニアリング株式会社 , 国立大学法人名古屋大学
发明人： HORI MASARU , KONDO HIROMOTO , HIRAMATSU MINEO , KANO HIROYUKI
IPC分类号： C01B31/02 , B82B1/00 , B82B3/00 , H01L21/205 , H01L29/06 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a selective growth method of a carbon nanowall. SOLUTION: A Ti film 101 of a pattern in which a square is arranged in a shape of a triangular lattice is formed on a substrate 100 consisting of SiO 2 . Next, a carbon nanowall is made to grow up on the SiO 2 substrate 100. Then, the growth is terminated in a time that is longer than a growth starting time of a carbon nanowall from Ti, and is shorter than a growth starting time of a carbon nanowall from SiO 2 . Here, the growth starting time of a carbon nanowall from SiO 2 is longer than the growth starting time from Ti. As a result, on the SiO 2 substrate 100, a carbon nanowall does not grow up in a region in which SiO 2 is exposed with no Ti film 101 formed, and a carbon nanowall 102 is formed only on the Ti film 101. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供碳纳米壁的选择性生长方法。解决方案：在由SiO 2 组成的基板100上形成其中正方形排列成三角形格子的图案的Ti膜101。接下来，使碳纳米壁在SiO 2 SBB衬底100上生长。然后，生长在比Ti的碳纳米壁的生长开始时间长的时间内终止，并且是比来自SiO 2 的碳纳米壁的生长开始时间短。这里，从SiO 2 的碳纳米壁的生长开始时间比从Ti开始生长的时间长。结果，在SiO 2 衬底100上，在不形成Ti膜101的情况下，在暴露了SiO 2 的区域中，碳纳米壁不会长大，碳纳米壁102仅形成在Ti膜101上。版权所有（C）2011，JPO＆INPIT

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