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    • 5. 发明专利
    • Multilayer structure
    • 多层结构
    • JP2006134786A
    • 2006-05-25
    • JP2004324577
    • 2004-11-09
    • Nagoya Institute Of TechnologyToyota Central Res & Dev Lab IncToyota Motor Corpトヨタ自動車株式会社国立大学法人 名古屋工業大学株式会社豊田中央研究所
    • TANAKA SHUNICHIROMAKINO TAKEHIKOKITA TAKUSHIFUNABASHI HIROBUMIMURATA KANAE
    • H01J1/304H01J1/30
    • PROBLEM TO BE SOLVED: To provide a multilayer structure for electron emission reduced in work function exceeding the conventional limit. SOLUTION: The multilayer structure 1 is provided with, on a metal substrate, an intermediate layer 3 consisting of an alloy in which a part of the metal on the substrate 2 is substituted by a kind of element selected from IIIb-group or IVb-group in the periodic-law table and a surface layer 4 consisting of one or more atomic layers of the same kind of element as the above substituted element on the intermediate layer 3, and the work function is 1 eV or less. Preferably, the one kind of element selected from the IIIb-group in the periodic-law table is In or the one of the element selected from the IVb-group in the periodic-law table is Sn. The above metal substrate 2 is preferably made of a metal belonging to the Ib-group in the periodic-law table or its alloy, and further preferably, is made of Cu or a Cu alloy. It is preferable that the above intermediate layer 3 is formed on the (111) face of the metal substrate 2 made of Cu or Cu alloy. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了提供超过常规极限的功函数减少的多层结构。 解决方案:多层结构1在金属基板上设置中间层3,该中间层3由合金构成,其中基板2上的金属的一部分被选自IIIb族或 IVb族和由中间层3上的与上述取代元素相同种类的元素的一个或多个原子层构成的表面层4,功函数为1eV以下。 优选地,选自周期律表中的IIIb族的一种元素是In,或者选自周期律表中的IVb-组中的元素之一是Sn。 上述金属基板2优选由周期律表中的Ib族金属或其合金构成,进一步优选由Cu或Cu合金制成。 优选上述中间层3形成在由Cu或Cu合金制成的金属基板2的(111)面上。 版权所有(C)2006,JPO&NCIPI