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1. 发明专利

JPS62290138A ELECTROLYTIC ETCHING LIQUID 失效
公开(公告)号：JPS62290138A
公开(公告)日：1987-12-17
申请号：JP13306486
申请日：1986-06-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAMOTO AKIISA
IPC分类号： H01L21/3063 , H01L21/306 , H01L21/308
摘要： PURPOSE:To eliminate the trouble of the formation of an oxide film to various semiconductors, particularly, an In group compound, etc., by using hydrobromic acid as one component. CONSTITUTION:Hydrobromic acid is employed as one component, and used typically in the type of an aqueous solution. lt is preferable that the concentration of such a hydrobromic acid aqueous solution extends over 1-50%. There is possibility in which capacity dissolving an oxide film shaped to a semiconductor as a body to be etched is reduced extremely when said concentration is less than 1%, and concentration is too high and there is the possibility of the corrosion of an etching device, etc., and trouble is often generated in handling, etc., when said concentration exceeds 50%. Other acids, such as hydrochloric acid, sulfuric acid, etc., besides hydrobromic acid and NH4OH for regulating PH, etc., can also be added.

2. 发明专利

JPS62105996A METHOD FOR VAPOR-PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPS62105996A
公开(公告)日：1987-05-16
申请号：JP24621285
申请日：1985-11-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NISHIOKA TAKASHI , ITO YOSHIO , YAMAMOTO AKIISA
IPC分类号： H01L21/205 , C30B25/02
摘要： PURPOSE:To obtain a thin crystal film free from cracking and having excellent characteristics, by depositing a thin crystal film of a substance different from substrate on a substrate by vapor-phase epitaxial growth, modifying the thin crystal film and growing a thin crystal film on the modified thin crystal film under electrical discharge. CONSTITUTION:A thin crystal film of a substance different from substrate is grown on a crystal substrate by vapor-phase epitaxial growth. In the above process, the surface of the substrate is cleaned by heating at a high temperature or by plasma discharge and an initial deposition layer is formed on the substrate by vapor-phase epitaxial growth in the 1st step. In the 2nd step, the above thin crystal film is deposited on the initial deposition layer by vapor-phase epitaxial growth under electrical discharge in a raw material gas of the above thin crystal film or the above thin crystal film is annealed for a short time (about 1min) to modify the crystallinity of the initial deposition layer. In the 3rd step, the thin crystal film is grown on the above initial deposition layer by epitaxial growth under electrical discharge in a raw material gas of the above thin crystal film. The temperature of the substrate is maintained always to

3. 发明专利

JPH01220819A MANUFACTURE OF COMPOSITE SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH01220819A
公开(公告)日：1989-09-04
申请号：JP4658588
申请日：1988-02-29
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUGO MITSURU , YAMAMOTO AKIISA , YAMAGUCHI MASASHI
IPC分类号： H01L21/28 , H01L21/20 , H01L21/36
摘要： PURPOSE:To enable integrated circuits or the like to be produced finely and precisely by forming a metallic layer on a second principal face of a semiconductor substrate opposite to the first one as a temperature higher than ordinary temperature is given to the substrate such that the metallic layer has a sufficiently large thickness that is determined in view of the temperature given to the substrate so that a composite semiconductor substrate obtains an inverse number of radius of curvature of warpage that is smaller than one tenth of that of the substrate. CONSTITUTION:On one principal face 2a of a semiconductor substrate body 1, a semiconductor layer 3 having a coefficient of thermal expansion higher than that of the substrate 1 is formed as a temperature higher than ordinary temperature is given to the semiconductor substrate 1, so that a semiconductor substrate 1 is produced. Then, a metallic layer 5 is formed on the other principal face 2b of the substrate 1 by vapor deposition, whereby a composite semiconductor substrate 6 is produced. The metallic layer 5 is formed, as a temperature higher than ordinary temperature is given to the semiconductor substrate 1, into a thickness which is large enough to enable the composite semiconductor substrate 6 to be produced to have only an inverse number of radius of curvature of warpage that is smaller than one tenth of that of the semiconductor substrate. Further, the temperature given to the semiconductor substrate 1 should be taken into consideration when such a thickness is determined.

4. 发明专利

JPS6257271B2 失效
公开(公告)号：JPS6257271B2
公开(公告)日：1987-11-30
申请号：JP4466282
申请日：1982-03-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAMOTO AKIISA , SUGIURA HIDEO , SHIBUKAWA ATSUSHI , YAMAGUCHI MASASHI
IPC分类号： H01L31/04 , H01L31/06 , H01L31/068 , H01L31/0687 , H01L31/0693

5. 发明专利

JPS6246994A METHOD AND APPARATUS FOR GROWING THIN FILM 失效
公开(公告)号：JPS6246994A
公开(公告)日：1987-02-28
申请号：JP18392085
申请日：1985-08-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NISHIOKA TAKASHI , ITO YOSHIO , YAMAMOTO AKIISA
IPC分类号： C30B25/02 , C30B23/02 , H01L21/205
摘要： PURPOSE:To execute expital growth of a high-grade semiconductor in succession by cleaning the surface of a substrate to be grown by the plasma obtd. by the plasma discharge generated in gas with H2 or O2 as a constituting component. CONSTITUTION:The Si substrate 20 to be grown installed on a susceptor (made of carbon coated with SiC) on a vertically movable supporting table 21 is placed to an electric discharge region generated by the electric power supplied from an RF plasma power source 4 to an electrode 41. The inside of a substrate-surface treatment chamber 2 into which gaseous H2 is preliminarily introduced 23 is always adjusted to 1 Torr and the substrate 20 is kept 400 deg.C. Mainly CH4 is formed of the atom-like hydrogen excited by the electric discharge and C which is a foreign element on the substrate 20 to detach said element from the substrate surface. On the other hand, the natural oxide film of Si which is the other foreign matter is reduced away by the excited hydrogen. The cleaned substrate 20 is introduced through a gate valve 1 into a growing chamber 3 and is moved together with the supporting table and susceptor to positions 30-32. The substrate 30 is heated to a prescribed temp. by the electric power supplied from a high-frequency heating power source 5 and the epitaxial growth is executed.

6. 发明专利

JPS63217672A COMPOSITE SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS63217672A
公开(公告)日：1988-09-09
申请号：JP5167287
申请日：1987-03-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUGO MITSURU , YAMAMOTO AKIISA , ITO YOSHIO , NISHIOKA TAKASHI
IPC分类号： H01L21/20 , H01L21/205 , H01L31/04 , H01L31/18
摘要： PURPOSE:To reduce the lattice mismatching of an Si substrate and a III-V compound semiconductor by containing B in a group III element in the III-V compound semiconductor formed onto the Si substrate. CONSTITUTION:B as a group III element in a III-V compound semiconductor film 3 grown onto an Si substrate 1 in an epitaxial manner and another group III element are mixed and used. When the composition (x) of a CaxB1-xAs solid solution is changed up to 0 from 1, a lattice mismatching rate with Si is reduced with decrease from 1 of the value of (x), and a lattice constant coincides with the lattice constant of Si when the value of (x) is approximately 0.75. Accordingly, the trouble of the lattice mismatching of the Si substrate 1 and the III-V compound semiconductor film 3 can be reduced, thus decreasing lattice defects such as mismatching dislocation, then improving quality.

7. 发明专利

JPS63211776A SOLAR CELL WITH ALGAAS/SI-LAMINATED STRUCTURE 失效
公开(公告)号：JPS63211776A
公开(公告)日：1988-09-02
申请号：JP4483987
申请日：1987-02-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NISHIOKA TAKASHI , ITO YOSHIO , YAMAMOTO AKIISA , YAMAGUCHI MASASHI
IPC分类号： H01L31/04
摘要： PURPOSE:To reduce unnecessary optical absorption due to a buffer layer and to obtain a highly efficient solar cell, which has absorbing characteristics matching the spectral distribution of sunlight and a simple structure, by specifying the composition ratio (y) of the p-n junction part of an AlyGa1-yAs mixed- crystal active layer within a range of 0.3 =0.2. CONSTITUTION:An Si substrate 1 comprises a p-type part 11 (thickness of about 100mum) and an n-type part 12 (thickness of 2mum). A p-n junction 10 is formed between said parts. On the Si substrate 1, an n-type AlxGa1-xAs buffer layer 2 (x>=0.2, e.g., x=0.2 and thickness of 100 nm) and an AlyGa1-yAs active layer 3 are laminated. Thus a two-stage laminated three-terminal structure is obtained. The AlyGa1-yAs active layer 3 comprises an n-type part 31 (thickness of 3mum) and a p-type part 32 (thickness of 0.2mum). A p-n junction 30 is formed between said parts. The composition ratio (y) of the part of the junction 30 is 0.3

8. 发明专利

JPS62291183A MANUFACTURE OF MULTIJUNCTION SEMICONDUCTOR PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPS62291183A
公开(公告)日：1987-12-17
申请号：JP13552186
申请日：1986-06-11
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KATSUMOTO SHINGO , AMANO CHIKARA , SHIBUKAWA ATSUSHI , YAMAMOTO AKIISA
IPC分类号： H01L31/04
摘要： PURPOSE:To obtain a multijunction semiconductor photoelectric conversion element of high efficiency by a method wherein a connecting portion of an upper cell with a lower cell is formed on the upper cell formed on a dummy substrate, the lower cell is formed on the connecting portion subsequently, and the dummy substrate is removed thereafter. CONSTITUTION:With a dummy substrate 8 used, an upper cell 16 having a high growth temperature is made to grow first, and then a lower cell 23 having a low growth temperature is made to grow. Therefore, neither of the grown cells will be heated at higher temperatures than those during growth. As to a multijunction semiconductor photoelectric conversion element having an upper cell of a smaller lattice constant than a lower cell, as well, lattice mismatch can be surmounted easily, since cells are made to grow in the sequence of the ones of smaller lattice constants ahead. This method enables the formation of an upper cell of high quantity and, consequently, the formation of a multijunction semiconductor photoelectric conversion element of high efficiency.

9. 发明专利

JPS6258674B2 失效
公开(公告)号：JPS6258674B2
公开(公告)日：1987-12-07
申请号：JP10309682
申请日：1982-06-17
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAMOTO AKIISA , KAMIMURA ZEIO
IPC分类号： H01L31/04 , H01L31/0445 , H01L31/06 , H01L31/068 , H01L31/0687 , H01L31/0735

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