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1. 发明专利

JP2002026457A III-V SEMICONDUCTOR MULTILAYER FILM AND METHOD OF MANUFACTURING THE SAME 失效
公开(公告)号：JP2002026457A
公开(公告)日：2002-01-25
申请号：JP2000203534
申请日：2000-07-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TATENO KOUTA , AMANO CHIKARA
IPC分类号： C01G28/00 , C01B25/08 , C23C16/30 , H01L21/205 , H01L33/06 , H01L33/12 , H01L33/30 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, in particular, a semiconductor laser, of excellent characteristics, by satisfactorily growing an Al-rich semiconductor layer on a P-containing layer. SOLUTION: In a III-V semiconductor multilayer film, a layer 11 having thickness of 1 nm or thicker and not containing P and Al is sandwiched between a layer 10 having a content of P of group-V of 20% or more and a layer 12 having an Al content of 20% or more. By adopting this structure, resistance increase in the Al-containing layer can be prevented by suppressing incorporation of Si impurities which compensate p-type dopants of Zn in the Al-containing layer.

2. 发明专利

JP2001261488A DEVICE AND METHOD FOR GROWING CRYSTAL 失效
公开(公告)号：JP2001261488A
公开(公告)日：2001-09-26
申请号：JP2000081666
申请日：2000-03-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TATENO KOUTA , KAGAWA TOSHIAKI , AMANO CHIKARA
IPC分类号： C30B23/08 , C30B25/14 , H01L21/203 , H01S5/42
摘要： PROBLEM TO BE SOLVED: To provide a device for growing a crystal, which is capable or imparting a partial distribution in a film thickness in a wafer surface on the way of growing and in a short time without need for any working process and preferably controlling position and film thickness, and further producing, e.g. multiple-wavelength surface light-emitting laser array, and to provide a method for growing the crystal. SOLUTION: A shielding plate 24 which has a slit-like opening part 23 capable of being moved within a crystal growing surface of a substrate 21 when the crystal is grown is provided between the substrate 21 and a supplying part 25 for supplying a raw material for growing the crystal. Thereby, it is possible to locally change the film thickness of the crystal to be grown in the crystal growing surface by moving the shielding plate 24 having the opening part 23 within the crystal growing surface of the substrate 21.

3. 发明专利

JP2001015394A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001015394A
公开(公告)日：2001-01-19
申请号：JP18711599
申请日：1999-07-01
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OOISO YOSHITAKA , IGA RYUZO , AMANO CHIKARA
IPC分类号： H01L21/02 , H01S5/00 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To obtain a crystal which is high in quality and hardly deteriorates in crystallinity at its interface by a method wherein a semiconductor layer formed on the top surface of a substrate is subjected to a high-temperature process, then the substrate located under the semiconductor layer is removed to turn the semiconductor layer to a thin film, and the thin film is pasted on another substrate of different lattice constant. SOLUTION: An etching stop layer 2, a clad layer 3, a light trapping layer 4, an active layer 5, a light trapping layer 6, a clad layer 7, and a cap layer 8 are grown on an InP substrate 1, then an SiO2 film 9 is deposited for the formation of a mesa. Thereafter, a current block layer composed of an Fe-InP layer 10 and an N-InP layer 11 is grown at a growth temperature of 630 deg.C or so. After the SiO2 film 9 is removed, a P-InP layer 12 and a contact layer 13 are grown. Then, a wax 14 is applied, and the semiconductor substrate 1 is pasted on an Si substrate 15. Thereafter, the InP substrate 1 is subjected to etching to make the etching stop layer 2 exposed, the etching stop layer 2 is removed, and the laminate is pasted on a Ga-As substrate 16.

4. 发明专利

JP2000058958A MULTIWAVELENGTH SURFACE LUMINESCENT SEMICONDUCTOR LASER ARRAY 失效
公开(公告)号：JP2000058958A
公开(公告)日：2000-02-25
申请号：JP22264498
申请日：1998-08-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OOISO YOSHITAKA , AMANO CHIKARA
IPC分类号： H01S5/00 , H01S5/30
摘要： PROBLEM TO BE SOLVED: To provide a multiwavelength surface luminescent semiconductor laser array with which a plurality of laser beams, having different wave lengths, can be emitted. SOLUTION: The first phase control layer 13, wherein two kinds of materials are alternately laminated, is provided between the first spacer layer 14 and the first reflection mirror 12, the second phase control layer 17 formed by alternately laminating two kinds of materials is provided between the second spacer layer 16 and the second reflection mirror 18, and oscillation wavelength is controlled by changing effective resonator length by changing the pair number of laminated layer of two kinds of materials which constitute the second phase control layer 17 corresponding to elements (a) to (d).

5. 发明专利

JPS5992576A SOLAR BATTERY 失效
公开(公告)号：JPS5992576A
公开(公告)日：1984-05-28
申请号：JP20185482
申请日：1982-11-19
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SHIBUKAWA ATSUSHI , AMANO CHIKARA , YAMAGUCHI MASASHI
IPC分类号： H01L31/0216 , H01L31/04 , H01L31/068 , H01L31/0693
摘要： PURPOSE:To enhance the light-electric conversion efficiency by forming a P-N junction of aluninum gallium arsenide and thus making a window layer extremely thin. CONSTITUTION:An N type aluminum gallium arsenide layer 7, the first P type aluminum gallium arsenide layer 8, and the second P type aluminum gallium arsenide layer 9 as the window layer are successively laminated on an N type gallium arsenide substrate 1, and ohmic electrodes 10 for the layers 8 and 9 are arranged. A non-reflection coating film 5 is laminated on the window layer 9, and an ohmic electrode 6 is arranged under the substrate 1. The range of conversion efficiency decreasing from the maximum value 28% to 0.5% is decided as an allowable range; the window layer 9 has a film thickness of 0.1mum or less and a composition of AlxGa1-xAs (x>0.7), and layers 7 and 8 which form the P-N junction have compositions AlyGa1-yAs (0.3>y>0.1), and the thickness of the layer 8 is 0.3-2.0mum.

6. 发明专利

JP2002196169A WAVEGUIDE TYPE OPTICAL ELEMENT AND MANUFACTURING METHOD 失效
公开(公告)号：JP2002196169A
公开(公告)日：2002-07-10
申请号：JP2001038802
申请日：2001-02-15
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： HIRABAYASHI KATSUHIKO , AMANO CHIKARA
IPC分类号： G02B6/122 , G02B6/12 , G02B6/13 , G02F1/01
摘要： PROBLEM TO BE SOLVED: To electrically mount a planar device or a material and a waveguide type device by making full use of their characteristics. SOLUTION: In the waveguide type optical element, grooves are formed on a substrate with waveguides or optical fibers fixed, in a manner so as to cut off the optical passing part, electrodes patterned for each waveguide or optical fiber are formed on the wall surface of the grooves like right-angled hooks, and the materials or elements, having any among electro-optical effect, thermo-optic effect, light emission function, light reception function, or a light modulation function are filled or inserted between the grooves.

7. 发明专利

JP2001320128A SEMICONDUCTOR LASER 失效
公开(公告)号：JP2001320128A
公开(公告)日：2001-11-16
申请号：JP2000136326
申请日：2000-05-09
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TATENO KOUTA , AMANO CHIKARA
IPC分类号： H01S5/183 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser having a pin structure which is high in efficiency electrically and optically. SOLUTION: An Si doped n-type Al0.15Ga0.32In0.53As buffer layer 2 of 0.2 μm and an Si doped n-type Al0.48In0.52As layer 3 of 1 μm are grown on an n-type InP substrate 1. After a non-doped Al0.27-0.34Ga0.20-0.13In0.53As inclined layer of 50 nm is grown, a quantum well active layer 4 composed of an Al0.07 Ga0.25In0.68As layer of 8 nm and an Al0.27Ga0.20In0.53As layer of 10 nm 5, and a non-doped Al0.27-0.34Ga0.20-0.13In0.53As inclined layer of 50 nm, are grown. Successively, A carbon doped p-type AlAs0.56Sb0.44 layer 5 of 1 μm and a carbon doped p-type GaAs0.51Sb0.49 layer 6 of 50 nm are grown.

8. 发明专利

JP2000164982A VERTICAL CAVITY SURFACE EMITTING LASER 失效
公开(公告)号：JP2000164982A
公开(公告)日：2000-06-16
申请号：JP33912198
申请日：1998-11-30
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT ELECTRONICS CORP
发明人： KAGAWA TOSHIAKI , UENOHARA HIROYUKI , TATENO KOTA , TADANAGA OSAMU , AMANO CHIKARA , NAKAJIMA NAGAAKI , FUKUDA MITSUO , TAKESHITA TATSUYA , ITAYA YOSHIO , SUGO MITSURU
IPC分类号： H01S5/00 , H01S5/183
摘要： PROBLEM TO BE SOLVED: To stabilize a vertical cavity surface emitting laser by alternately laminating first and second semiconductor layers to form a first distributed Bragg reflection mirror, alternately laminating third and fourth semiconductor layers to form a second distributed Bragg reflection mirror, and forming such that the optical length of the semiconductor layers and protective layers is a specified wavelength of an oscillation light obtained from an active layer. SOLUTION: A first n-type distributed Bragg reflection mirror 103 is formed through an n-type GaAs buffer layer 102 on an n-type GaAs substrate 101, this mirror 103 is composed of alternately laminated n-type AlGaAs low- refractive index layers and n-type AlGaAs high-refractive index layers, and a second n-type distributed Bragg reflection mirror 107 is formed on the first mirror 103 through an active layer 105 sandwiched between upper and lower spacers 104, 106 with alternately laminated low-refractive index layers and high-refractive index layers such that the optical length of the refractive index layers and a protective layer 108 is quarter wavelength of the oscillation light of the active layer 105.

9. 发明专利

JPH10261839A SEMICONDUCTOR THIN FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10261839A
公开(公告)日：1998-09-29
申请号：JP6577297
申请日：1997-03-19
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TATENO KOUTA , OISO YOSHITAKA , AMANO CHIKARA , WAKABI ATSUSHI , KUROKAWA TAKASHI
IPC分类号： H01L29/201 , H01L21/205 , H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To deposit favorably a high AlGaAs multilayer film on an Al element and to contrive to apply the multilayer film to the manufacture of a device by a method wherein a p-type AlGaAs film, which is doped with carbon and is specified, is formed on a GaAs substrate with the B-face (311) as its main surface. SOLUTION: A laminated structure constituted by laminating P-type Alx Ga1-x As/P-type Aly Ga1-y As (x>=0.5 and y

10. 发明专利

JPH05243687A 失效
公开(公告)号：JPH05243687A
公开(公告)日：1993-09-21
申请号：JP7879392
申请日：1992-03-02
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KOHAMA TAKETAKA , OOISO YOSHITAKA , AMANO CHIKARA
IPC分类号： H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/40 , H01L33/44 , H01S5/00 , H01S5/042 , H01S3/18 , H01L33/00
摘要： PURPOSE:To materialize a low-resistance element capable of maintaining a high reflectivity by forming a first ring type metallic film on the upper part of a semiconductor light reflecting layer, and further, on the first metallic film, a second metallic film having a high light reflectivity, which is brought into contact with the upper part of the semiconductor reflecting layer. CONSTITUTION:On a crystal substrate 1, a first semiconductor light reflecting layer is formed. A second semiconductor light reflecting layer 6 is formed. A first ring type metal 8 of Cr/Au is vapor deposited on a p-type GaAs layer 7. Au is vapor deposited on the first ring metal 8 to form a second metal 14. With respect to the second semiconductor reflecting layer 6, the first ring type metal 8 and the second metal 14 of Au, Ag or the like which has a high reflectivity itself are formed on the upper part of the p-type GaAs layer 7. Thus, it is possible to curtail the semiconductor layer logarithm for the semiconductor light reflecting layer part constituting the complexly structured light reflecting structure, the first semiconductor reflecting layer 2 and the second semiconductor reflecting layer 2.

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