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1. 发明专利

JP2000050345A PHS POSITION INFORMATION NOTICE TERMINAL AND ITS SYSTEM 失效
公开(公告)号：JP2000050345A
公开(公告)日：2000-02-18
申请号：JP22520298
申请日：1998-07-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SUZUKI YOSHITAKE , HAGINO TERUO , SAKURAI TETSUTADA
IPC分类号： G01C21/00 , G01S5/02 , H04W4/02 , H04Q7/34
摘要： PROBLEM TO BE SOLVED: To enhance precision of position detection in the same radio base station area of a PHS terminal and to dissolve an error of the position detection due to fluctuation in electric field strength in the position information notice service of the PHS terminal. SOLUTION: A PHS terminal incorporates sensors 5-9 that detect a motion and an azimuth to enhance the precision of position detection in the same radio base station area based on data obtained from the sensors and when the PHS terminal moves in the radio base station area in spite of the fact that the PHS terminals do not move by the output of the sensors, it is regarded as being an error due to fluctuation in electric field strength and the PHS terminal is regarded as being present in a precedingly measured position.

2. 发明专利

JPH11175086A PREPROCESSING METHOD FOR CHARACTER STRING MATCHING OF WORD SPEECH RECOGNITION 失效
公开(公告)号：JPH11175086A
公开(公告)日：1999-07-02
申请号：JP33958597
申请日：1997-12-10
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT ADVANCED TECH KK
发明人： NAKADAI YOSHIO , SUZUKI YOSHITAKE , SAKURAI TETSUTADA , KUROKAWA SHUNEI , SATO YAMATO
IPC分类号： G10L15/10 , G10L15/18 , G10L3/00
摘要： PROBLEM TO BE SOLVED: To decrease the calculation quantity of matching against a word dictionary. SOLUTION: An input voice is converted into a phoneme series of vowels, fricatives, and voiceless parts * as shown by A, discontinuous parts 'o' and 'i' are replaced with last symbols 'a' and '*' as shown by B, and a part where the same symbol succeeds is replaced with one symbol as shown by C. The similarity between the preprocessing result and words of the word dictionary which are generated corresponding to them is calculated.

3. 发明专利

JPH10256982A USER ACTION SUPPORTING SYSTEM USING PHS 失效
公开(公告)号：JPH10256982A
公开(公告)日：1998-09-25
申请号：JP7470697
申请日：1997-03-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAKURAI TETSUTADA , NAKADAI YOSHIO , SUZUKI YOSHITAKE , NISHINO YUTAKA
IPC分类号： G01S5/02 , H04B7/26 , H04W4/02 , H04W88/18 , H04Q7/34 , H04Q7/38
摘要： PROBLEM TO BE SOLVED: To use this system at the time of high speed movement and to make both cost effectiveness and convenience compatible by selecting a standard pattern whose likelihood is the highest from among standard patterns by using a recognizing function provided at a network side when a signal is a voice, and executing the intention of a user intended by the standard pattern. SOLUTION: This system is provided with a system 5 having a subscriber's line function and a signal line exchange function and a sub-system 7 having a voice recognizing function which converts the intention of a user indicated by a signal generated by vocalization or a key operation into a signal as 'a rule' at a network side, and transmits it to the network side. Then, a standard pattern whose likelihood is the highest for a voice or a signal sound is selected from standard patterns stored in the storage part of the sub-system 7 by using a recognizing function at the network side, and the intention of the user intended by the selected standard pattern is executed. Thus, at the time of high speed movement, a rescue service or a guide service based on the position information of the user is offered in a further convenient way.

4. 发明专利

JP2588377B2 失效
公开(公告)号：JP2588377B2
公开(公告)日：1997-03-05
申请号：JP32196694
申请日：1994-12-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAKURAI TETSUTADA
IPC分类号： B65D85/86 , C23C14/50 , H01L21/304 , H01L21/31 , H01L21/68 , H01L21/683

5. 发明专利

JPH08111359A LAMINATED SUBSTRATE AND PRODUCTION THEREOF 失效
公开(公告)号：JPH08111359A
公开(公告)日：1996-04-30
申请号：JP24598394
申请日：1994-10-12
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT ELECTRONIC TECH
发明人： UNNO HIDEYUKI , SAKURAI TETSUTADA , SHIMOKUCHI NOBUYUKI
IPC分类号： H01L27/12 , H01L21/02
摘要： PURPOSE: To prevent a region, where the ambient gas is left, from being produced on the laminating face when wafers are laminated. CONSTITUTION: A longitudinal stripe pattern 101 is formed in the regions above and below a periphery 13 where no chip 12 is formed when an orientation flat 10 is directed downward whereas lateral stripe pattern 102 is formed in the regions on the left and right of the periphery 13.

6. 发明专利

JPH0786107A STICKING METHOD FOR WAFER 失效
公开(公告)号：JPH0786107A
公开(公告)日：1995-03-31
申请号：JP22919093
申请日：1993-09-14
申请人： NIPPON TELEGRAPH & TELEPHONE , NTT ELECTRONIC TECH
发明人： IMAI KAZUO , SHIMOKUCHI NOBUYUKI , SAKURAI TETSUTADA
IPC分类号： H01L21/02 , H01L27/12
摘要： PURPOSE:To provide a method for sticking wafers in which the yield and quality are enhanced by embodying a controlled wafer profile. CONSTITUTION:The method for sticking first and second wafers 21, 22 comprises a step for preparing the first wafer having convex bonding surface and the second wafer having concave bonding surface, a step for machining the bonding surface of the first wafer 21 to have average radius of curvature shorter than that of the second wafer 22, and a step for bonding the first and second wafers 21, 22.

7. 发明专利

JPS6089957A COMPLEMENTARY SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6089957A
公开(公告)日：1985-05-20
申请号：JP19752483
申请日：1983-10-24
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAKURAI TETSUTADA , OONO AKIKAZU , IZUMI KATSUTOSHI
IPC分类号： H01L27/08 , H01L21/762 , H01L27/092
摘要： PURPOSE:To obtain a C-MOS element which shows a high resistance voltage, low power consumption and has high packing integration density by providing a plurality of islands insulated and separated by insulation films in a support substrate, providing an island having no insulation film at the bottom surface to at least one of such islands, forming any of at least one P channel MOS element in such island, and forming a channel MOS element having conductivity type different from said MOS element in this island where the insulation film exists at the bottom surface. CONSTITUTION:A couple of N type island regions 8 of which entire part is covered with an insulation film 6 are provided on the P type support substrate 7, a second island region 8' where only side wall is surrounded by the insulation film 6 is formed between the regions 8, and both N type source region 92 and drain region 102 are provided herein, thereby completing an N channel MOS element 16. A couple of P type source regions 91 and drain regions 101 are respectively provided to the one second island region 8, forming a couple of P channel MOS elements 15. On the other hand, the P type base region 94 and the N type emitter region 93 are provided in the other region 8, thus completing a bipolar type N-P-N transistor element 18.

8. 发明专利

JPS5854626A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5854626A
公开(公告)日：1983-03-31
申请号：JP15302281
申请日：1981-09-29
申请人： NIPPON TELEGRAPH & TELEPHONE , OKI ELECTRIC IND CO LTD
发明人： SAKURAI TETSUTADA , KATOU KOUTAROU , TAKAYASHIKI TETSUYA , TOTSUKA NORIO
IPC分类号： H01L21/205 , H01L21/314
摘要： PURPOSE:To obtain passivation structure by a new passivation layer film by a method wherein a semiinsulating film is arranged without contacting with the exposed section of a P-N junction and under the condition of contacting with a semiconductor region with low impurity density compared with the surrounding semiconductor region. CONSTITUTION:An N-P-N transistor 1 is composed by forming a P type region 3 becoming a base region and an N type region 4 becoming an emitter region respectively on an N type silicon semiconductor substrate 2 becoming a collector region. A P type region is formed as a guard ring 5 around the P type region 3. A semiinsulating film 13 is arranged without contacting with the exposed section of a P-N junction 6 and under the condition of contacting with a semiconductor region with low impurity density compared with the surrounding semiconductor region. An opening 10 is formed at the film 13 and an SiO2 layer 9 by a photoetching method and furthermore, a base electrode 11 and an emitter electrode 12 are coated and formed.

9. 发明专利

JPS57143842A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57143842A
公开(公告)日：1982-09-06
申请号：JP2921281
申请日：1981-02-28
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAKURAI TETSUTADA , KATOU KOUTAROU
IPC分类号： H01L21/306 , H01L21/31 , H01L21/762
摘要： PURPOSE:To make the main surface of semiconductor element region accurately flat when a substrate is removed after the epitaxial growth of an element region layer is made on a semiconductor single crystal substrate and the respective regions are separated by etching and an insulation layer and a supporting layer are formed. CONSTITUTION:Thin impurity diffusion regions 33 are formed on the surface of a semiconductor single crystal substrate 32. The epitaxial growth of a semiconductor layer 35 which forms element regions are made on the substrate and the respective regions are separated by etching. After an insulation film 39 and a poly- Si supporting layer 40 are formed, etching is carried out from the surface of the substrate 32. With the progress of the etching, the diffusion layers 33 are exposed and difference of etchig speed is caused by differnce of impurity density and so forth. When the differnce in level is generated by the difference of etching speed, the surface is polished and the main surface 45 of the semiconductor layer 35 which forms element regions 44 is made accurately flat, so that the element regions 44 can be formed to the specified thickness in parallel with the substrate surface.

10. 发明专利

JPS57106066A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57106066A
公开(公告)日：1982-07-01
申请号：JP18129580
申请日：1980-12-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAKURAI TETSUTADA , KATOU KOUTAROU , OONO AKIKAZU
IPC分类号： H01L21/8226 , H01L27/02 , H01L27/082
摘要： PURPOSE:To enable to form low withstand voltage elements on the same substrate with a high withstand voltage element without damaging characteristic of the latter in a semiconductor device by a method wherein after a part of a protective film formed on an epitaxial layer is removed selectively, the second epitaxial layer is formed thereon. CONSTITUTION:The first N type buried layer 5 is formed on a P type semiconductor substrate 4. Then the first N type epitaxial layer 7 is formed. P type isolation diffusion layers 10 are formed in the layer 7. Openings are formed selectively in the protective film 14 generated during formation of the layer 10, the second N type buried layers 8 are formed, and the second N type epitaxial layer 9 is formed thereon. At this time, the layer 9 being made to grow at the part in which the film 14 is existing grows as a polycrystalline Si layer 15, and the layer 9 being made to grow at the part in which the film 14 is not existing grows as a single crystal Si layer 16. After then, then necessary part of the layer 9 is made to be reserved selectively to form the low withstand voltage elements, and the high withstand voltage element is formed in the isolation region of the layer 7 in which the layer 8 is not formed. Accordingly because thickness and concentration of impurity of the epitaxial layer to form the low withstand voltage element and the high withstand voltage element can be set for both independently, the desired characteristic can be obtained.

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